AVR 8515 microcontroller
Abstract: FPGA AMI coding decoding tri state AOI222 AOI2223 AOI2223H AOI222H ATL35 0.35-um CMOS standard cell library inverter
Text: Features • System Level Integration Technology • 0.35 µm Geometry in Triple-level Metal • I/O Interfaces; CMOS, LVTTL, LVDS, PCI, USB – Output Currents up to 20 mA, 5V Tolerant I/O • Embedded Flash Memory with Capacities of 1Mbit, 2Mbit or 4Mbit
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22-bit
16-bit
1184B
03/00/xM
AVR 8515 microcontroller
FPGA AMI coding decoding
tri state
AOI222
AOI2223
AOI2223H
AOI222H
ATL35
0.35-um CMOS standard cell library inverter
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MB88F332
Abstract: 180NM cmos process parameters apix ashell LSI FUJITSU INAP125 lcd ttl tcon ARGB8888 TFT LCD n96 EGS02 TFT LCD panel 1.8"
Text: MB88F332 LSI Product Specifications 3th December, 2008 Edition 0.981 FUJITSU PROPRIETARY AND CONFIDENTIAL MB88F332 LSI Product Specifications Preface Objectives and Intended Reader Thank you very much for your continued special support for Fujitsu semiconductor products.
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MB88F332
MB88F332.
180NM cmos process parameters
apix ashell
LSI FUJITSU
INAP125
lcd ttl tcon
ARGB8888
TFT LCD n96
EGS02
TFT LCD panel 1.8"
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HY638256
Abstract: HY638256J-15
Text: HY638256 Series 32Kx8bit CMOS FAST SRAM DESCRIPTION The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techniques, yields maximum access time of 15ns. The HY638256 has a data retention mode
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HY638256
32Kx8bit
-100mA
100mA
28pin
300mil
HY638256J-15
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Untitled
Abstract: No abstract text available
Text: CY7C277 '# C Y P R E S S Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 30-ns address set-up — 15-ns dock to output • Low power — 660 mW commercial — 715 mW (military) • Programmable address latch enable
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CY7C277
30-ns
15-ns
300-mil,
28-pin
28-Lead
CY7C277â
50WMB
28-Lead
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Untitled
Abstract: No abstract text available
Text: HM6207H Series 5.0 V Supply 262,144-word x 1-bit High Speed CMOS Static RAM co" ;fj|?, > > > > > > > > ^ • Single 5 V supply and high density 24-pin package • High speed Access time: 25/35/45 ns max • Low power — Operation: 300 mW (typ) — Standby: 100 |iW (typ)
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HM6207H
144-word
24-pin
D024fllb
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Untitled
Abstract: No abstract text available
Text: Features 32K x 8 Power-Switched and Reprogrammable PROM • Capable of withstanding > 4001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 25 ns commercial — 35 ns (military) • Low power — 275 mW (commercial)
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300-mil
CY7C271A
CY7C271A
768-word
7C271A
S50Tbb2
GG1530Q
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Untitled
Abstract: No abstract text available
Text: STK15C88 32K x 8 AutoStoré nvSRAM High Performance CMOS Nonvolatile Static RAM SlfflTEK PRELIMINARY FEATURES DESCRIPTION • 25ns, 35ns and 45ns Access Times The Simtek STK15C88 is a fast static RAM with a nonvolatile, electrically-erasable PROM element
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STK15C88
STK15C88
fl274flA7
fl274flÃ
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V9990
Abstract: S0X3 yamaha v9990 CSR BC8 yamaha fc4 A4032 scax1 csr bc7 KA17/127BPV1MSTH yamaha fc5
Text: YAMAHA L S i E-VDP-III APPLICATION MANUAL YAMAHA V 9990 APPLICATION MANUAL CATALOG No. : LSI-2499903 1992. 09 NOTICES YAMAHA reserves the right to make changes in specifications in order to improve performance without notice. The application circuit herein are presented only as an example.
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V9990
LSI-2499903
CA95131
S0X3
yamaha v9990
CSR BC8
yamaha fc4
A4032
scax1
csr bc7
KA17/127BPV1MSTH
yamaha fc5
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Untitled
Abstract: No abstract text available
Text: CY7C277 CYPRESS SEMICONDUCTOR Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed Reprogrammable 32K x 8 Registered PROM • Programmable address latch enable input 5V ±10% V cc, commercial and military • Programmable synchronous or
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CY7C277
30-ns
15-ns
300-m
28-pin
32-Pin
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c28w
Abstract: No abstract text available
Text: Kp \ f { ft:'> h C 2 5 6 8 i .i )R ,2 K k B S i i A ivi 32K X 8 SRAM FEATURES • • • • • • • • • Access tim es o f 12,15,20 ns Fast output enable (tDOE) for cache applications Low active power: 400 niW (Typical) Low standby power Fully static operation, no clock or refresh required
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ThC256SDJ
DS000063
28-Pin
2568D
c28w
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Untitled
Abstract: No abstract text available
Text: Issue 1.0: September 1989 MSM464T/V-25/35 64 K x 4 Monolithic BiCMOS SRAM MSM464T/V 19 : ADVANCE PRODUCT INFORMATION 65,536 x 4 BiCMOS High Speed Static RAM Definitions Features Package Type.T'.’V’
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MSM464T/V-25/35
MSM464T/V
MIL-STD-883C
GND12
MSM464THMB-25
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Untitled
Abstract: No abstract text available
Text: STK15C88 32K x 8 AutoStore nvSRAM High Performance CMOS Nonvolatile Static RAM SimTEK PRELIMINARY FEATURES DESCRIPTION • 25ns, 35ns and 45ns Access Times • Store to EEPROM Initiated by Software or AutoStore™ on Power Down The Simtek STK15C88 is a fast static RAM with a
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STK15C88
200ns
STK15C88
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D41464c
Abstract: D41464 NEC D41464 PD41464 WE-HC 41464-15 UPD41464V-10 C-15 L-12 PD41464-15
Text: NEC ¿/PD41464 6 5 ,5 3 6 X 4 -B IT D Y N A M IC NMOS RAM NEC Electronics Inc. Novem ber 1987 D e s c rip tio n The //PD41464 is a 65,536-word by 4-b it dynam ic Nchartnel MOS random access m em ory RAM designed to operate from a single + 5 -v o lt pow er supply. The
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uPD41464
536-word
PD41464
D41464c
D41464
NEC D41464
WE-HC
41464-15
UPD41464V-10
C-15
L-12
PD41464-15
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Untitled
Abstract: No abstract text available
Text: STK11C88 32K x 8 nvSRAM High Performance CMOS Nonvolatile Static RAM SlfflTEK PRELIMINARY FEATURES DESCRIPTION • 25ns, 35ns and 45ns Access Times The Sirrrtek STK11C88 is a fast static RAM with a nonvolatile, electrically-erasable PROM element incorporated in each static memory cell. The SRAM
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STK11C88
STK11C88
274SS7
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Untitled
Abstract: No abstract text available
Text: HM10500-15 — P re lim in a ry 262,144 Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION HM10500-15 is E C L10K com patible, 262,144-words x 1-bit, read/ write random access m em ory developed for high speed systems such as main m em ories for super computers.
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HM10500-15
144-words
520mW
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Untitled
Abstract: No abstract text available
Text: >£ 64 K X 4 Monolithic CMOS SRAM molale M o sa ic S e m ic o n d u c to r inc. MSM464T/V/W-45/55 Issue 2.1 : MAY 1992 PRELIMINARY 65,536 x 4 CMOS High Speed Static RAM Pin D efinitions Package T y p e ^ .V Features Very Fast Access Times of 45/55 ns Standard 24 pin Duai-ln-Une Package
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MSM464T/V/W-45/55
MIL-STD-883,
oS5la0cA92i2i
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Untitled
Abstract: No abstract text available
Text: Issue 1.0: September 1989 MSM464T/V-45/55 64 K X 4 Monolithic CMOS SRAM MSM464T/V ADVANCE PRODUCT INFORMATION 65,536 x 4 CMOS High Speed Static RAM ^ Features Pin Definitions Memory Array 1 2 3 4 5 6 7 8 9 C c c C f= i= c l= c A9 10 1= □ □ =1 □ □ □
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MSM464T/V-45/55
MSM464T/V
MIL-STD-883C
A10A15-
GND12
MSM464TM
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Untitled
Abstract: No abstract text available
Text: z/czso: inursaay. May i s issm Revision: August 19,1994 CY27C256 W CYPRESS Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected
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CY27C256
CY27C256
768-word
600-mil
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Untitled
Abstract: No abstract text available
Text: MSM464T/V-25/35 Issue 1.0: September 1989 64 K x 4 M o n o l it h i c B i C M O S S R A M MSM464T/V ADVANCE PRODUCT INFORMATION 65,536 x 4 BiCMOS High Speed Static RAM Pin Definitions Features Package Type: T 7 V Very Fast Access Times of 25/35 nS Standard 24 pin DIL Footprint
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MSM464T/V-25/35
MSM464T/V
MIL-STD-883C
GND12
MSM464THMB-25
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pin diagram ic 7420
Abstract: UCS 1903 MSM6324
Text: 32/C X 6 SR A M m o l a MSM832-020/025/35 t e Issue 1.1 : June 1993 ADVANCE PRODUCT INFORMATION Sem iconductor 32,768 X 8 CMOS High Speed Static RAM Pin Definition Package Type: 'G \ *S', T , V Features Access Times of 020/025/35 ns Standard 28 pin DIL footprint.
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MSM832-020/025/35
MIL-STD-883,
20Super
CA92121
pin diagram ic 7420
UCS 1903
MSM6324
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464M
Abstract: 28 pad leadless
Text: 64 K X 4 Monolithic CMOS SRAM molaic S e m ic o n d u c to r MSM464T/WW-45/55 Issue 2.1 : MAY 1992 PRELIMINARY 65,536 x 4 CMOS High Speed Static RAM Inc. Pin Definitions Package T yp e:T ,V Features Very Fast Access Times of 45/55 ns Standard 24 pin Duai-ln-Line Package
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MSM464T/WW-45/55
MIL-STD-883,
464M
28 pad leadless
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LC 7258
Abstract: C-274
Text: bSE D C Y P R ES S S E M I C O N D U C T O R SSÖRbbE QQ1GS50 T M «CYP CY7C271 CY7C274 CYPRESS SEMICONDUCTOR Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • Highspeed •— 30 ns commercial •— 35 ns (military)
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QQ1GS50
CY7C271
CY7C274
300-mil
7C271)
LC 7258
C-274
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Untitled
Abstract: No abstract text available
Text: Prelim inary HM10500 Series 262,144 Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION HM10500-15 is EC L1 0K compatible, 262,144-words x 1-bit, read/ write random access memory developed for high speed systems such as main memories for super computers.
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HM10500
HM10500-15
144-words
520mW
DG-24V)
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HM6207HLP-35
Abstract: HM6207HLP-25
Text: HM6207H Series 262,144-word x 1-bit High Speed CMOS Static RAM HITACHI Features • Single 5 V supply and high density 24-pin package • High speed Access time: 25/35/45 ns max • Low power — Operation: 300 mW (typ) — Standby: 100 jlW (typ) 30 jitW (typ) (L-version)
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HM6207H
144-word
24-pin
HM6207HP-25
HM6207HP-35
HM6207HP-45
HM6207HLP-25
HM6207HLP-35
HM6207HLP-45
HM6207HJP-25
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