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    AVR 8515 microcontroller

    Abstract: FPGA AMI coding decoding tri state AOI222 AOI2223 AOI2223H AOI222H ATL35 0.35-um CMOS standard cell library inverter
    Text: Features • System Level Integration Technology • 0.35 µm Geometry in Triple-level Metal • I/O Interfaces; CMOS, LVTTL, LVDS, PCI, USB – Output Currents up to 20 mA, 5V Tolerant I/O • Embedded Flash Memory with Capacities of 1Mbit, 2Mbit or 4Mbit


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    PDF 22-bit 16-bit 1184B 03/00/xM AVR 8515 microcontroller FPGA AMI coding decoding tri state AOI222 AOI2223 AOI2223H AOI222H ATL35 0.35-um CMOS standard cell library inverter

    MB88F332

    Abstract: 180NM cmos process parameters apix ashell LSI FUJITSU INAP125 lcd ttl tcon ARGB8888 TFT LCD n96 EGS02 TFT LCD panel 1.8"
    Text: MB88F332 LSI Product Specifications 3th December, 2008 Edition 0.981 FUJITSU PROPRIETARY AND CONFIDENTIAL MB88F332 LSI Product Specifications Preface Objectives and Intended Reader Thank you very much for your continued special support for Fujitsu semiconductor products.


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    PDF MB88F332 MB88F332. 180NM cmos process parameters apix ashell LSI FUJITSU INAP125 lcd ttl tcon ARGB8888 TFT LCD n96 EGS02 TFT LCD panel 1.8"

    HY638256

    Abstract: HY638256J-15
    Text: HY638256 Series 32Kx8bit CMOS FAST SRAM DESCRIPTION The HY638256 is a high-speed 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with high-speed circuit design techniques, yields maximum access time of 15ns. The HY638256 has a data retention mode


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    PDF HY638256 32Kx8bit -100mA 100mA 28pin 300mil HY638256J-15

    Untitled

    Abstract: No abstract text available
    Text: CY7C277 '# C Y P R E S S Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed — 30-ns address set-up — 15-ns dock to output • Low power — 660 mW commercial — 715 mW (military) • Programmable address latch enable


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    PDF CY7C277 30-ns 15-ns 300-mil, 28-pin 28-Lead CY7C277â 50WMB 28-Lead

    Untitled

    Abstract: No abstract text available
    Text: HM6207H Series 5.0 V Supply 262,144-word x 1-bit High Speed CMOS Static RAM co" ;fj|?, > > > > > > > > ^ • Single 5 V supply and high density 24-pin package • High speed Access time: 25/35/45 ns max • Low power — Operation: 300 mW (typ) — Standby: 100 |iW (typ)


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    PDF HM6207H 144-word 24-pin D024fllb

    Untitled

    Abstract: No abstract text available
    Text: Features 32K x 8 Power-Switched and Reprogrammable PROM • Capable of withstanding > 4001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 25 ns commercial — 35 ns (military) • Low power — 275 mW (commercial)


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    PDF 300-mil CY7C271A CY7C271A 768-word 7C271A S50Tbb2 GG1530Q

    Untitled

    Abstract: No abstract text available
    Text: STK15C88 32K x 8 AutoStoré nvSRAM High Performance CMOS Nonvolatile Static RAM SlfflTEK PRELIMINARY FEATURES DESCRIPTION • 25ns, 35ns and 45ns Access Times The Simtek STK15C88 is a fast static RAM with a nonvolatile, electrically-erasable PROM element


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    PDF STK15C88 STK15C88 fl274flA7 fl274flÃ

    V9990

    Abstract: S0X3 yamaha v9990 CSR BC8 yamaha fc4 A4032 scax1 csr bc7 KA17/127BPV1MSTH yamaha fc5
    Text: YAMAHA L S i E-VDP-III APPLICATION MANUAL YAMAHA V 9990 APPLICATION MANUAL CATALOG No. : LSI-2499903 1992. 09 NOTICES YAMAHA reserves the right to make changes in specifications in order to improve performance without notice. The application circuit herein are presented only as an example.


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    PDF V9990 LSI-2499903 CA95131 S0X3 yamaha v9990 CSR BC8 yamaha fc4 A4032 scax1 csr bc7 KA17/127BPV1MSTH yamaha fc5

    Untitled

    Abstract: No abstract text available
    Text: CY7C277 CYPRESS SEMICONDUCTOR Features • Windowed for reprogrammability • CMOS for optimum speed/power • High speed Reprogrammable 32K x 8 Registered PROM • Programmable address latch enable input 5V ±10% V cc, commercial and military • Programmable synchronous or


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    PDF CY7C277 30-ns 15-ns 300-m 28-pin 32-Pin

    c28w

    Abstract: No abstract text available
    Text: Kp \ f { ft:'> h C 2 5 6 8 i .i )R ,2 K k B S i i A ivi 32K X 8 SRAM FEATURES • • • • • • • • • Access tim es o f 12,15,20 ns Fast output enable (tDOE) for cache applications Low active power: 400 niW (Typical) Low standby power Fully static operation, no clock or refresh required


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    PDF ThC256SDJ DS000063 28-Pin 2568D c28w

    Untitled

    Abstract: No abstract text available
    Text: Issue 1.0: September 1989 MSM464T/V-25/35 64 K x 4 Monolithic BiCMOS SRAM MSM464T/V 19 : ADVANCE PRODUCT INFORMATION 65,536 x 4 BiCMOS High Speed Static RAM Definitions Features Package Type.T'.’V’


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    PDF MSM464T/V-25/35 MSM464T/V MIL-STD-883C GND12 MSM464THMB-25

    Untitled

    Abstract: No abstract text available
    Text: STK15C88 32K x 8 AutoStore nvSRAM High Performance CMOS Nonvolatile Static RAM SimTEK PRELIMINARY FEATURES DESCRIPTION • 25ns, 35ns and 45ns Access Times • Store to EEPROM Initiated by Software or AutoStore™ on Power Down The Simtek STK15C88 is a fast static RAM with a


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    PDF STK15C88 200ns STK15C88

    D41464c

    Abstract: D41464 NEC D41464 PD41464 WE-HC 41464-15 UPD41464V-10 C-15 L-12 PD41464-15
    Text: NEC ¿/PD41464 6 5 ,5 3 6 X 4 -B IT D Y N A M IC NMOS RAM NEC Electronics Inc. Novem ber 1987 D e s c rip tio n The //PD41464 is a 65,536-word by 4-b it dynam ic Nchartnel MOS random access m em ory RAM designed to operate from a single + 5 -v o lt pow er supply. The


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    PDF uPD41464 536-word PD41464 D41464c D41464 NEC D41464 WE-HC 41464-15 UPD41464V-10 C-15 L-12 PD41464-15

    Untitled

    Abstract: No abstract text available
    Text: STK11C88 32K x 8 nvSRAM High Performance CMOS Nonvolatile Static RAM SlfflTEK PRELIMINARY FEATURES DESCRIPTION • 25ns, 35ns and 45ns Access Times The Sirrrtek STK11C88 is a fast static RAM with a nonvolatile, electrically-erasable PROM element incorporated in each static memory cell. The SRAM


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    PDF STK11C88 STK11C88 274SS7

    Untitled

    Abstract: No abstract text available
    Text: HM10500-15 — P re lim in a ry 262,144 Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION HM10500-15 is E C L10K com patible, 262,144-words x 1-bit, read/ write random access m em ory developed for high speed systems such as main m em ories for super computers.


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    PDF HM10500-15 144-words 520mW

    Untitled

    Abstract: No abstract text available
    Text: >£ 64 K X 4 Monolithic CMOS SRAM molale M o sa ic S e m ic o n d u c to r inc. MSM464T/V/W-45/55 Issue 2.1 : MAY 1992 PRELIMINARY 65,536 x 4 CMOS High Speed Static RAM Pin D efinitions Package T y p e ^ .V Features Very Fast Access Times of 45/55 ns Standard 24 pin Duai-ln-Une Package


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    PDF MSM464T/V/W-45/55 MIL-STD-883, oS5la0cA92i2i

    Untitled

    Abstract: No abstract text available
    Text: Issue 1.0: September 1989 MSM464T/V-45/55 64 K X 4 Monolithic CMOS SRAM MSM464T/V ADVANCE PRODUCT INFORMATION 65,536 x 4 CMOS High Speed Static RAM ^ Features Pin Definitions Memory Array 1 2 3 4 5 6 7 8 9 C c c C f= i= c l= c A9 10 1= □ □ =1 □ □ □


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    PDF MSM464T/V-45/55 MSM464T/V MIL-STD-883C A10A15- GND12 MSM464TM

    Untitled

    Abstract: No abstract text available
    Text: z/czso: inursaay. May i s issm Revision: August 19,1994 CY27C256 W CYPRESS Features • Wide speed range — 45 ns to 200 ns commercial and military • Low power — 248 mW (commercial) — 303 mW (military) • Low standby power — Less than 83 mW when deselected


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    PDF CY27C256 CY27C256 768-word 600-mil

    Untitled

    Abstract: No abstract text available
    Text: MSM464T/V-25/35 Issue 1.0: September 1989 64 K x 4 M o n o l it h i c B i C M O S S R A M MSM464T/V ADVANCE PRODUCT INFORMATION 65,536 x 4 BiCMOS High Speed Static RAM Pin Definitions Features Package Type: T 7 V Very Fast Access Times of 25/35 nS Standard 24 pin DIL Footprint


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    PDF MSM464T/V-25/35 MSM464T/V MIL-STD-883C GND12 MSM464THMB-25

    pin diagram ic 7420

    Abstract: UCS 1903 MSM6324
    Text: 32/C X 6 SR A M m o l a MSM832-020/025/35 t e Issue 1.1 : June 1993 ADVANCE PRODUCT INFORMATION Sem iconductor 32,768 X 8 CMOS High Speed Static RAM Pin Definition Package Type: 'G \ *S', T , V Features Access Times of 020/025/35 ns Standard 28 pin DIL footprint.


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    PDF MSM832-020/025/35 MIL-STD-883, 20Super CA92121 pin diagram ic 7420 UCS 1903 MSM6324

    464M

    Abstract: 28 pad leadless
    Text: 64 K X 4 Monolithic CMOS SRAM molaic S e m ic o n d u c to r MSM464T/WW-45/55 Issue 2.1 : MAY 1992 PRELIMINARY 65,536 x 4 CMOS High Speed Static RAM Inc. Pin Definitions Package T yp e:T ,V Features Very Fast Access Times of 45/55 ns Standard 24 pin Duai-ln-Line Package


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    PDF MSM464T/WW-45/55 MIL-STD-883, 464M 28 pad leadless

    LC 7258

    Abstract: C-274
    Text: bSE D C Y P R ES S S E M I C O N D U C T O R SSÖRbbE QQ1GS50 T M «CYP CY7C271 CY7C274 CYPRESS SEMICONDUCTOR Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • Highspeed •— 30 ns commercial •— 35 ns (military)


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    PDF QQ1GS50 CY7C271 CY7C274 300-mil 7C271) LC 7258 C-274

    Untitled

    Abstract: No abstract text available
    Text: Prelim inary HM10500 Series 262,144 Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION HM10500-15 is EC L1 0K compatible, 262,144-words x 1-bit, read/ write random access memory developed for high speed systems such as main memories for super computers.


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    PDF HM10500 HM10500-15 144-words 520mW DG-24V)

    HM6207HLP-35

    Abstract: HM6207HLP-25
    Text: HM6207H Series 262,144-word x 1-bit High Speed CMOS Static RAM HITACHI Features • Single 5 V supply and high density 24-pin package • High speed Access time: 25/35/45 ns max • Low power — Operation: 300 mW (typ) — Standby: 100 jlW (typ) 30 jitW (typ) (L-version)


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    PDF HM6207H 144-word 24-pin HM6207HP-25 HM6207HP-35 HM6207HP-45 HM6207HLP-25 HM6207HLP-35 HM6207HLP-45 HM6207HJP-25