Untitled
Abstract: No abstract text available
Text: Surface Mount TCBT-2R5G+ TCBT-2R5G Bias-Tee Wideband 20 to 2500 MHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature • • • • • -55°C to 100°C RF Power 25dBm max. Voltage at DC port 25V max. Input Current 100mA
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25dBm
100mA
GU1041
2002/95/EC)
TB-268
PL-146)
M107262
ED-11250/2
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PDF
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Rogers-4003
Abstract: CAPACITOR 33PF FPD1050SOT89 rogers 4003 26GHz LNA
Text: EB1050SOT89-AG FPD1050SOT89 2.6GHz LNA EVALUATION BOARD FEATURES Measured @ 2.6GHz • 25dBm Output Power • 16dB Gain ¥ 0.6dB Noise Figure ¥ 36dBm OIP3 measured at 12dBm per tone ¥ Bias Vd = 5V, Id = 80mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS
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EB1050SOT89-AG
FPD1050SOT89
25dBm
36dBm
12dBm
FPD1050SOT89;
1050m
30mil
LL1608
Rogers-4003
CAPACITOR 33PF
rogers 4003
26GHz LNA
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PDF
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ERA-3SM
Abstract: ERA-3SM 99 1128B
Text: ERA-3SM Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: ERA-3SM Reference Data: RDF-1128B S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER = -25dBm, Icc = 35mA, Vd = 3.25V @Temperature = +25degC
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RDF-1128B
-25dBm,
25degC
ERA-3SM
ERA-3SM 99
1128B
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PDF
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GALI-55
Abstract: No abstract text available
Text: GALI-55 Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: GALI-55 Reference Data: RDF-1244D S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER = -25dBm, Icc = 50mA, Vd = 4.49V @Temperature = +25degC
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GALI-55
GALI-55
RDF-1244D
-25dBm,
25degC
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PDF
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Untitled
Abstract: No abstract text available
Text: MMIC Amplifier PHA-1+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. DEVICE VOLTAGE INPUT POWER = -25dBm, Vd = 5.00V INPUT POWER = -25dBm, Temperature = +25°C 20 20 18 18 - 45°C 16 GAIN dB GAIN (dB) 5V 14 +85°C 12 4.75V 16 +25°C 14 10 8 5.25V
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-25dBm,
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PDF
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1128B
Abstract: mmic era3
Text: ERA-3 Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: ERA-3 Reference Data: RDF-1128B S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER = -25dBm, Icc = 35mA, Vd = 3.25V @Temperature = +25degC
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RDF-1128B
-25dBm,
25degC
1128B
mmic era3
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PDF
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GVA-83
Abstract: GVA83 MMIC
Text: MMIC Amplifier GVA-83+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. DEVICE VOLTAGE INPUT POWER = -25dBm, Temperature=25°C, Rb=7.5Ω INPUT POWER = -25dBm, Vd = 5.00V, Rb=7.5Ω 26 26 24 - 45°C 22 +25°C +85°C GAIN dB GAIN (dB) 20 18 16 14
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GVA-83+
-25dBm,
GVA-83
GVA83 MMIC
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PDF
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GVA-84
Abstract: GVA84 MMIC
Text: MMIC Amplifier GVA-84+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. DEVICE VOLTAGE INPUT POWER = -25dBm, Temperature = +25°C INPUT POWER = -25dBm, Vd = 5.00V 26 26 24 - 45°C 24 4.75V 22 +25°C 22 5V 20 +85°C 20 5.25V 18 dB (dB) 18 16 16
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GVA-84+
-25dBm,
GVA-84
GVA84 MMIC
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PDF
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GALI-52
Abstract: No abstract text available
Text: MMIC Amplifier GALI-52+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -25dBm, CURRENT = 50mA INPUT POWER = -25dBm, Temperature = +25°C 40 40 35 -45°C 35 40mA 30 +25°C 30 50mA 25 +85°C 25 60mA 20 dB (dB) 20 15 15 10 10
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GALI-52+
-25dBm,
GALI-52
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PDF
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Untitled
Abstract: No abstract text available
Text: MMIC Amplifier ERA-3 Typical Performance Curves S21 vs. TEMPERATURE INPUT POWER = -25dBm, CURRENT = 35mA 24 24 22 -45°C 20 +25°C 28mA 22 35mA 20 42mA +85°C 18 18 16 16 dB (dB) S21 vs. CURRENT INPUT POWER = -25dBm, Temperature = +25°C 14 14 12 12 10 10
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-25dBm,
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PDF
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Untitled
Abstract: No abstract text available
Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω
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FLM1011-6F
-45dBc
25dBm
FLM1011-6F
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PDF
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TGA2922-SG
Abstract: 802.11a Amplifier sg 81 AVX06035J1R2BBT AVX06035J3R9BBT RO4003
Text: Advance Product Information April 27, 2005 2 Watt 802.11a Packaged Amplifier TGA2922-SG Key Features • • • • • • • • 4.9 - 6 GHz Application Frequency Range 11 dB Nominal Gain @ 8V 480mA 34 dBm Nominal P1dB @ 8V 480mA 2.5% EVM at 25dBm output power
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TGA2922-SG
480mA
25dBm
-50dBc
22dBm
TGA2922-SG
802.11a Amplifier
sg 81
AVX06035J1R2BBT
AVX06035J3R9BBT
RO4003
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FLM1011-6F
Abstract: No abstract text available
Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω
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FLM1011-6F
-45dBc
25dBm
FLM1011-6F
V4888
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PDF
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FRM3Z232HY
Abstract: No abstract text available
Text: InGaAs-PIN/Preamp Receiver FRM3Z232HY FEATURES • • • • • • Data rate up to 2.7Gb/s Sensitivity: -25dBm typ. Small co-axial package with single-mode fiber Differential Electrical Output Preamplifier Power Supply Voltage: +3.3V Wide operating temperature range: -40 to +85°C
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FRM3Z232HY
-25dBm
550nm
FCSI0302M200
FRM3Z232HY
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PDF
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FLM1213-6F
Abstract: No abstract text available
Text: FLM1213-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω
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FLM1213-6F
-45dBc
25dBm
FLM1213-6F
V4888
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PDF
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PL-146
Abstract: po 254 TCBT-2R5G GU1041 TB-268
Text: Surface Mount TCBT-2R5G+ TCBT-2R5G Bias-Tee Wideband 20 to 2500 MHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature • • • • -55°C to 100°C RF Power 25dBm max. Voltage at DC port 25V max. Input Current 100mA 4 RF&DC
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Original
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25dBm
100mA
2002/95/EC)
GU1041
M107262
ED-11250/2
PL-146
po 254
TCBT-2R5G
GU1041
TB-268
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PDF
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Untitled
Abstract: No abstract text available
Text: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026 P1dB =33dBm at 5V 802.11g 54Mb/s Class AB Performance POUT =25dBm at 2.5% EVM,
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RFPA5026
33dBm
54Mb/s
25dBm
680mA
DS120110
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PDF
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Untitled
Abstract: No abstract text available
Text: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 782MHz Part No: MP02502 Model: TA1152A REV. NO: 1 A. MAXIMUM RATING: 1. Input Power Level: 25dBm 2. DC Voltage: 3V
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782MHz
MP02502
25dBm
787MHz)
700MHz
756MHz
890MHz
2000MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: FLM1213-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω
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FLM1213-6F
-45dBc
25dBm
FLM1213-6F
FCSI0598M200
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PDF
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Untitled
Abstract: No abstract text available
Text: RF5602 RF56023.3V to 5.0 V, 2.3GHz to 2.7GHz Linear Power Amplifier 3.3V TO 5.0V, 2.3GHz TO 2.7GHz LINEAR POWER AMPLIFIER Features GND VCC2 VCC2 14 13 BIAS VCC 1 12 RF OUT Single 3.3V to 5V Supply st 2% EVM RMS at 25dBm, 4.2V PDOWN Integrated Power Detector on Die
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RF5602
RF56023
16-Pin,
25dBm,
26dBm,
RF5602WM33410
RF5602WL50PCK-410
RF5602WL50410
RF5602WL33PCK-410
RF5602WL33410
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PDF
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FLM1011-6F
Abstract: No abstract text available
Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω
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FLM1011-6F
-45dBc
25dBm
FLM1011-6F
FCSI0598M200
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PDF
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FLM1213-6F
Abstract: fujitsu gaas fet
Text: FLM1213-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω
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FLM1213-6F
-45dBc
25dBm
FLM1213-6F
FCSI0598M200
fujitsu gaas fet
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PDF
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Untitled
Abstract: No abstract text available
Text: FLM1213-6F X, Ku-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 37.5dBm Typ. • High Gain: G ^ b = 7.0dB (Typ.) • High PAE: r!add = 27% (Typ.) • Low IM3 = -45dBc@Po = 25dBm • Broad Band: 12.7 ~ 13.2GHz • Impedance Matched Zin/Zout = 50Q
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OCR Scan
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FLM1213-6F
-45dBc
25dBm
FLM1213-6F
FCSI0598M200
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PDF
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Untitled
Abstract: No abstract text available
Text: F| .fjW-,. J FLM4450-4E Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 36dBm Typ. High Gain: G-j^B = 11dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q
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FLM4450-4E
36dBm
-45dBc
25dBm
4450-4E
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