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    25V,100MA TRANSISTOR Search Results

    25V,100MA TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    25V,100MA TRANSISTOR Price and Stock

    Microchip Technology Inc 2N1613A

    Bipolar Transistors - BJT NPN Transistor
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    Onlinecomponents.com 2N1613A
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    Microchip Technology Inc 2N3442

    Bipolar Transistors - BJT NPN Transistor
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    Onlinecomponents.com 2N3442
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    Microchip Technology Inc JANS2N2920U

    Bipolar Transistors - BJT NPN Dual Transistors
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    Onlinecomponents.com JANS2N2920U
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    • 100 $140.16
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    Microchip Technology Inc 2N4033

    Bulk Through Hole PNP 1 Bipolar (BJT) Transistor 100 @ 100mA 5V 1A 800mW 80V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N4033
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    • 100 $8.27
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    Diotec Semiconductor AG BC847BR13

    Bipolar Transistor - SOT-23 - 45V - 100mA - NPN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com BC847BR13
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    25V,100MA TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN 2N3391A

    Abstract: 2n3391a
    Text: 2N3391A NPN Silicon Transistor. 25V - 100mA. 1.25 Transistors Bipola. 1 of 1 Home Part Number: 2N3391A Online Store 2N3391A Diodes NPN Silic o n Transis t o r. 2 5 V - 1 0 0 m A. Transistors Enter code INTER3 at


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    PDF 2N3391A 100mA. com/2n3391a 2N3391A NPN 2N3391A

    TP2535N3-G

    Abstract: No abstract text available
    Text: TP2535 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


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    PDF TP2535 125pF TP2535 DSFP-TP2535 A112807 TP2535N3-G

    Untitled

    Abstract: No abstract text available
    Text: TP2540 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


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    PDF TP2540 125pF TP2540 O-243AA OT-89) O-243, DSFP-TP2540 A122707

    ISD-200

    Abstract: DN2470 DN2470K4 DN2470K4-G FAST DMOS FET Switches
    Text: DN2470 DN2470 Initial Release N-Channel Depletion-Mode Vertical DMOS FET Features General Description This low threshold depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a


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    PDF DN2470 100mA 100mA, 200mA DSFP-DN2470 NR011905 ISD-200 DN2470 DN2470K4 DN2470K4-G FAST DMOS FET Switches

    TO252

    Abstract: No abstract text available
    Text: DN2470 DN2470 Initial Release N-Channel Depletion-Mode Vertical DMOS FET Features General Description This low threshold depletion-mode normally-on transistor utilizes an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a


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    PDF DN2470 DN2470 A020606 O-252 DSFP-DN2470 TO252

    TP2535

    Abstract: No abstract text available
    Text: TP2535 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


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    PDF TP2535 125pF DSFP-TP2535 A091508 TP2535

    TP2535

    Abstract: sitp TP2535N A052
    Text: Supertex inc. TP2535 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


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    PDF TP2535 125pF DSFP-TP2535 A052109 TP2535 sitp TP2535N A052

    Untitled

    Abstract: No abstract text available
    Text: DN2470 N-Channel Depletion-Mode Vertical DMOS FET Features ► ► ► ► ► ► General Description The DN2470 is a low threshold depletion-mode normally-on transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.


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    PDF DN2470 DN2470 O-252 DSFP-DN2470 A012307

    Untitled

    Abstract: No abstract text available
    Text: TP2540 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


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    PDF TP2540 125pF DSFP-TP2540 A052109

    tp5d

    Abstract: No abstract text available
    Text: TP2540 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


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    PDF TP2540 125pF DSFP-TP2540 A091508 tp5d

    MPS-004

    Abstract: MPS004 2N4125 EBC 2n3704
    Text: T ransistors TO-92 JEDEC Standards Numbers #NPN Transistors General purpose small signal amplifiers Part No. Package BVcbo Min. BVceo Min. BVebo Min. iCBO Max. @VCB Min. Max. @lc & Vce V ce (sat) Max. 4 Vbe (sat) Max. @lc Cob Max. Min. 10pF 180MHz fr @ Ic


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    PDF 2N2925 2N3711 MPS3711 2N3860 100nA 180MHz 200mA MPS-A63 MPS-004 MPS004 2N4125 EBC 2n3704

    2n3904 TO-92

    Abstract: No abstract text available
    Text: Transistors TO-92 JEDEC Standards Numbers •N P N Transistors General purpose small signal amplifiers Package B V cbo Min. BV ceo Min. 2N2925 TO -92 (ECB) 25V 25V 2N3711 MPS3711 TO -92 (ECB) CEBC) 30V 2N3860 TO -92 (ECB) 2N5088 BVEBo Min. hFE Vce (sat)


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    PDF 100nA 160MHz 2N2925 2N3711 MPS3711 2N3860 4pF-92 100mA 2n3904 TO-92

    100ria

    Abstract: 25V6K RN5305 2N4494
    Text: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V


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    PDF 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 100ria 25V6K RN5305 2N4494

    2M5087

    Abstract: 2M4401 2N3904 A31 NPS3704 2N3904 A38 NPN CBO 40V CEO 25V EBO 5V FN2222 2N3904 die TO92 30v 800ma 500ma 40v pnp
    Text: U.S. European Type Series TO-92 •Package style and dimensions : mm T O -9 2 JEDEC Standards Numbers) A.B± 0.2 3.7 ± 0.2 NPN Transistors Electrical characteristics of each Part No. can be looked up from the data of DIE No.


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    PDF 100nA 200mA 2N2925 2N3711 MPS3711 2N3860 2N5088 160MHz 100mA 2M5087 2M4401 2N3904 A31 NPS3704 2N3904 A38 NPN CBO 40V CEO 25V EBO 5V FN2222 2N3904 die TO92 30v 800ma 500ma 40v pnp

    z10m

    Abstract: psa56
    Text: Transistors TO-92 JEDEC Standards Numbers #N PN Transistors General purpose small signal amplifiers P a ckage BV qbo Min. BV ceo Min. 2N2925 TO -92 (ECB) 25V 25V 2N3711 MPS3711 TO -92 (ECB) (EBC) 30V 2N3860 TO -92 (ECB) 2N5088 BV ebo Min. hFE Min . Max.


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    PDF 100nA 160MHz 2N2925 2N3711 MPS3711 2N3860 100nA V100m PS-A63 z10m psa56

    2n 2222A 3904

    Abstract: No abstract text available
    Text: DGG7423 ^ 2 •RHU TO-92 JEDEC Standards Numbers • N P N Transistors General purpose small signal amplifiers B V Ebo Min. ICBO Vbe (sat) Max. Cob Max. fr Min. @ Ic 10pF 160MHz Typ. B V qbo Min. BV ceo Min. 2N 2925 TO-92 (ECB) 25V 25V 5V 100nA 25V 235 470


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    PDF DGG7423 160MHz 100nA 2N3711 MPS3711 90MHz MPS-A65 100nA 2n 2222A 3904

    TO92-EBC

    Abstract: mpsd54
    Text: ROHM CO LTD llD E D VflEâ'm D0032Ô3 7 IRHM transistors 7 = 3 /-/T T-27-29 Medium Power Amplifiers Type RN5815 RN5817 RN5819 Package Fig-1 TO-92 (EBC) TO-92 (EBC) TO-92 (EBC) BVcbo BVceo BVebo Min, Min. Min. . 50V 50V 50V MPS4354 TO-92 (EBC) 60V MPS4355


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    PDF D0032 RN5815 RN5817 RN5819 100nA 100nA' 500mA TO92-EBC mpsd54

    DG01D

    Abstract: 82360 2SD1225
    Text: ROHM COR? “ " TöD D | Medium Power Amplifiers b Vcbo Package Type Min. • PNP Transistors BVce O BVebo 'ÇBO @ V0B Min. Min. Max. RN5819 TO-92 EBC TO-92 (EBC) TO-92 (EBC) MPS4354 TO-92 (EBC) 60V 60V 5V 50nA 50V MPS4355 TO-92 (EBC) 60V 60V 5V 50nA 50V


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    PDF DG01D7E T-27-01 100MHz 120MHz 135MHz RN5815 RN5817 RN5819 100nA DG01D 82360 2SD1225

    NPN CBO 40V CEO 25V EBO 5V

    Abstract: MMST8598
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.


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    PDF OT-23) 200mA SC-59/Japanese SST1130 MMST1130 SST5088 MMST5088 100nA 50MHz NPN CBO 40V CEO 25V EBO 5V MMST8598

    sot23 marking code 8pf

    Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V


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    PDF OT-23) SC-59/Japanese SST1130 MMST1130 200mA SST5088 MMST5088 100nA SST5089 sot23 marking code 8pf marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5

    marking r2k

    Abstract: marking r1c GAJ SOT23 R1P SOT-223
    Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) •N P N Transistors General purpose small signal amplifiers SST SMT BV qbo Min. BV ceo Min. b v EB0 Min. SSTH30 MMST1130 30V 25V 5V SST5088 MMST5088 35V 30V 4.6V 'f° Max. @VCB . hF.E.


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    PDF OT-23) SSTH30 MMST1130 SC-59/Japanese BCX70K BCX71G BCX71H BCX71J BFS17 marking r2k marking r1c GAJ SOT23 R1P SOT-223

    2N3904 TO-92 type

    Abstract: 2n4401 Die RJE9018 2n3904 c33 2n3904 C37 mps8097 CBO 40V CEO 25V EBO 5V
    Text: Transistors/Leaded Type USA/European Specification Models • TO-92 Package/NPN Type For General Purpose Small Signal Amplifiers P art No. P a ckage BV cbo M in. BV ceo Min. BV ebo Min. hFE • ! f ° @Vcs Min. Max. @ lc & V ce Max. V e rs a ti V sd sat Max.


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    PDF 100nA 160MHz 2N2925 2N5232A MPS8097 MPSA20 MPS8098 PN918 RJE9014C RJE9018G 2N3904 TO-92 type 2n4401 Die RJE9018 2n3904 c33 2n3904 C37 CBO 40V CEO 25V EBO 5V

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2n4494

    Abstract: MPS3709 MPS3711 2N4495 2N3707 2N3708 2N3709 PN2218 2N3711 MPS3707
    Text: ^ .L l " . mge » 702^ H 6 0 0 0 3 2 7 0 ig 3 ffiRHM t-27-ö\ rT7m • Transistors • NPN Transistors TO-92) General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3710 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495


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    PDF T-27-Ã 2N3707 MPS3707 100nA 100/iA 2N3708 MPS3708 2N3709 MPS3709 2n4494 MPS3711 2N4495 PN2218 2N3711