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    260NS Search Results

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    260NS Price and Stock

    Rochester Electronics LLC SN74S260NS

    IC GATE NOR 5-INP
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    DigiKey SN74S260NS Bulk 11,700 249
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    • 1000 $1.21
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    SMC Corporation of America VXD260NSB

    PROCESS VALVE FOR AIR, PILOT OPERATED, SOLENOID, 2 PORT, VXD2*0 SERIES | SMC Corporation VXD260NSB
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    RS VXD260NSB Bulk 5 Weeks 1
    • 1 $117.96
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    SMC Corporation of America VXD260NSXB

    VALVE, PROCESS, PILOT OP 2 PORT SOLENOID NC, VXD SERIES | SMC Corporation VXD260NSXB
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    RS VXD260NSXB Bulk 5 Weeks 1
    • 1 $123.4
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    SMC Corporation of America VXD260NSBXB

    Solenoid Valve, Pilot Op, 2 Port, for Air, 6, NC, C37, 1 | SMC Corporation VXD260NSBXB
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    RS VXD260NSBXB Bulk 5 Weeks 1
    • 1 $127.04
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    KEMET Corporation LF-260N

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com LF-260N 3
    • 1 $741.99
    • 10 $674.65
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    260NS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Memory Module Specifications KHX16C10B1B/8 8GB 1G x 64-Bit DDR3-1600 CL10 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 36ns (min.)


    Original     		PDF KHX16C10B1B/8 64-Bit DDR3-1600 240-Pin 260ns 64-bit DDR31600

    Untitled

    Abstract: No abstract text available
    Text: Memory Module Specifications KHX13C9B1/8 8GB 1G x 64-Bit DDR3-1333 CL9 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 36ns (min.) Maximum Operating Power


    Original     		PDF KHX13C9B1/8 64-Bit DDR3-1333 240-Pin 260ns 64-bit DDR31333

    Untitled

    Abstract: No abstract text available
    Text: KHX18C10/4 4GB 512M x 64-Bit DDR3-1866 CL10 240-Pin DIMM SPECIFICATIONS CL IDD 11 cycles Row Cycle Time (tRCmin) 48.125ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 35ns (min.) Maximum Operating Power 3.480 W*


    Original     		PDF KHX18C10/4 64-Bit DDR3-1866 240-Pin 125ns 260ns 64-bit DDR3-1866

    Untitled

    Abstract: No abstract text available
    Text: KHX18C10/8 8GB 1G x 64-Bit DDR3-1866 CL10 240-Pin DIMM SPECIFICATIONS CL IDD 11 cycles Row Cycle Time (tRCmin) 48.125ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 35ns (min.) Maximum Operating Power 3.924 W*


    Original     		PDF KHX18C10/8 64-Bit DDR3-1866 240-Pin 125ns 260ns 64-bit DDR31866

    Untitled

    Abstract: No abstract text available
    Text: Memory Module Specifications KHX16C9K2/16 16GB 8GB 1G x 64-Bit x 2 pcs. DDR3-1600 CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin)


    Original     		PDF KHX16C9K2/16 64-Bit DDR3-1600 240-Pin 260ns KHX16C9K2/16 64-bit

    Untitled

    Abstract: No abstract text available
    Text: KHX1600C9D3LK2/8GX 8GB 4GB 512M x 64-Bit x 2 pcs. DDR3L-1600 CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 11 cycles Row Cycle Time (tRCmin) 48.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 35ns (min.) Maximum Operating Power


    Original     		PDF KHX1600C9D3LK2/8GX 64-Bit DDR3L-1600 240-Pin 260ns KHX1600C9D3LK2/8GX 64-bit

    Untitled

    Abstract: No abstract text available
    Text: Memory Module Specifications KHX16C10B1R/8 8GB 1G x 64-Bit DDR3-1600 CL10 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 36ns (min.)


    Original     		PDF KHX16C10B1R/8 64-Bit DDR3-1600 240-Pin 260ns 64-bit DDR31600

    Untitled

    Abstract: No abstract text available
    Text: KHX18C10T2K2/8 8GB 4GB 512M x 64-Bit x 2 pcs. DDR3-1866 CL10 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 11 cycles Row Cycle Time (tRCmin) 48.125ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 35ns (min.) Maximum Operating Power


    Original     		PDF KHX18C10T2K2/8 64-Bit DDR3-1866 240-Pin 125ns 260ns KHX18C10T2K2/8 64-bit

    DDR3 DIMM SPD JEDEC

    Abstract: DDR3 SPD DDR3 1600 spd
    Text: Memory Module Specifications KHX1600C10D3B1K2/16G 16G 8GB 2Rx8 1G x 64-Bit x 2 pcs. DDR3-1600 CL10 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin)


    Original     		PDF KHX1600C10D3B1K2/16G 64-Bit DDR3-1600 240-Pin 260ns KHX1600C10D3B1K2/16G 64-bit DDR3 DIMM SPD JEDEC DDR3 SPD DDR3 1600 spd

    Untitled

    Abstract: No abstract text available
    Text: Memory Module Specifications KHX13C9B1B/8 8GB 1G x 64-Bit DDR3-1333 CL9 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 36ns (min.) Maximum Operating Power


    Original     		PDF KHX13C9B1B/8 64-Bit DDR3-1333 240-Pin 260ns 64-bit DDR31333

    CEER117

    Abstract: No abstract text available
    Text: Datasheet 1ch Gate Driver Providing Galvanic Isolation 2500Vrms Isolation Voltage BM60051FV-C General Description Key Specifications The BM60051FV-C is a gate driver with an isolation voltage of 2500Vrms, I/O delay time of 260ns, minimum input pulse width of 180ns, and incorporates the fault


    Original     		PDF 2500Vrms BM60051FV-C BM60051FV-C 2500Vrms, 260ns, 180ns, CEER117

    ddr3 1600 timing

    Abstract: 1600 CL9 SPD data
    Text: Memory Module Specifications KHX16C9/8 8GB 1G x 64-Bit DDR3-1600 CL9 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 36ns (min.) Maximum Operating Power


    Original     		PDF KHX16C9/8 64-Bit DDR3-1600 240-Pin 260ns 64-bit DDR31600 ddr3 1600 timing 1600 CL9 SPD data

    2460W

    Abstract: No abstract text available
    Text: Memory Module Specifications KHX1600C10D3B1/8G 8GB 2Rx8 1G x 64-Bit DDR3-1600 CL10 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 36ns (min.)


    Original     		PDF KHX1600C10D3B1/8G 64-Bit DDR3-1600 240-Pin 260ns 64-bit 2460W

    APT42F50B

    Abstract: APT42F50S MIC4452 43A 013
    Text: APT42F50B APT42F50S 600V, 43A, 0.13Ω Max trr ≤260ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


    Original     		PDF APT42F50B APT42F50S 260ns APT42F50B APT42F50S MIC4452 43A 013

    Untitled

    Abstract: No abstract text available
    Text: ADS1255 ADS1256 SBAS288E − JUNE 2003 − REVISED APRIL 2005 Very Low Noise, 24ĆBit AnalogĆtoĆDigital Converter FEATURES D 24 Bits, No Missing Codes DESCRIPTION The ADS1255 and ADS1256 are extremely low-noise, 24-bit analog-to-digital A/D converters. They provide


    Original     		PDF ADS1255 ADS1256 SBAS288E 24Bit 30kSPS ADS1256 24-bit

    100 kilo ohms resistor specifications

    Abstract: PCA96XX PCA9306 69RC BAT54A LPC932 P82B96 PCA9600 PCA9633 PCA9665
    Text: I2C Maximum Clock Speed Calculator Mar 2009 BLSIC/BU MMS NXP semiconductors I2C-Bus Maximum Clock Speed Calculator Excel file of Calculator > Double click to open. If this is a PDF then go to URL


    Original     		PDF p82b96 pca9600 i2c/pdf/pca9600 P82B715 /i2c/pdf/p82b715 100 kilo ohms resistor specifications PCA96XX PCA9306 69RC BAT54A LPC932 PCA9633 PCA9665

    km41256 dram

    Abstract: KM-41256 km41256 KM41256A-10 KM41257A TRCD D
    Text: NMOS DRAM KM41256A/KM41257A 2 56 K x 1 Bit Dynamic RAM with Page/Nibble Mode DESCRIPTION FEATURES • Performance range KM41256/7A-10 taac tcAC •rc 100ns 50ns 200ns KM41256/7A-12 120ns 60ns 230ns KM41256/7A-15 150ns 75ns 260ns Page Mode capability-KM41256A


    OCR Scan     		PDF KM41256A/KM41257A 256Kx KM41256/7A-10 100ns 200ns KM41256/7A-12 120ns 230ns KM41256/7A-15 150ns km41256 dram KM-41256 km41256 KM41256A-10 KM41257A TRCD D

    Multiplexer Switches

    Abstract: No abstract text available
    Text: MULTIPLEXER/SWITCHES SELECTION GUIDE Multiplexers NUMBER OF CHANNELS R on TURN-ON TIME SUPPLY VOLTAGE DIGITAL I/O LTC 1390 8 45n 260ns +3 —» ±5 Serial Bi-directional LTC1391 8 45Q 260ns +3 DE-MUX Yes FEATURES Precision Low Power, Break-Before-M ake 3-W ire


    OCR Scan     		PDF 260ns LTC1391 125C2 400ns/300ns LTC202 125S2 Multiplexer Switches

    MN41256-12

    Abstract: MN41256-15 MN41256 41256-15 IR511 SFE 10.7 MX MN4125 FA-135
    Text: P ANA SO NIC 6932852 IN DL/ELEK P A NA S ON I C -CIO 72 Î ËJ 1,^32852 0G[lb353 □ J ~ IND L.ELECTRON IC" . 72C 06353 t D 7 - 'fi- 2 î- tS' M M N 4 1 256-12, MN41256-15 MN41 256-1 2 , MN41 256-1 5 262,144 tr-y h N M O S ¥ < t S ' y # R A M 2 6 2 ,1 4 4 -B it N M O S Dynamic RAM


    OCR Scan     		PDF MN41256-12, MN41256-15 144-Bit MN41256 MN41256 144-word 16-lead 300mil MN41256-12 MN41256-15 41256-15 IR511 SFE 10.7 MX MN4125 FA-135

    S27121

    Abstract: HB561009A-12 HB561009A-15 HB561009A-20 M040 hitachi nomenclature
    Text: T A R G E T S P E C IF IC A T IO N *M040 HB561009A-12, H B561009A-15, H B561009A-20 P re lim in a ry MARCH, 1986 <§> H IT A C H I 262.144 x 9-bit Dynam ic Random Access M em ory Module • GENERAL DESCRIPTION The HB561009A is a 2304K dynamic random-access


    OCR Scan     		PDF HB561009A-12, HB561009A-15, HB561009A-20 HB561009A 2304K 30-pin HM50256CP, 18-pin S27121 HB561009A-12 HB561009A-15 HB561009A-20 M040 hitachi nomenclature

    MN4264

    Abstract: kzz 72 JVC 0J DD01 MN-4264
    Text: . PANASONIC INDL/ELEK -CIO 72 P A N A S O N IC IN D L , E L E C T R O N IC EEÌ t3ci 3 2 ñ S 2 O Oü t . 3 1 5 . - 3 | . 6932852 ^ E U '" 72C 0Ò315 DJ - Ÿ f - ? ? - / 7 ^ . MN4264 6 5 , 5 3 6 \£ y N M O S £ * - i •? i y ? R A M 6 5 , 5 3 6 - B i t N M O S Dynamic RAM


    OCR Scan     		PDF MN4264 536-Bit MN4264 i64Bf( WSI57 kzz 72 JVC 0J DD01 MN-4264

    memory samsung

    Abstract: No abstract text available
    Text: KMM411024/K M M 511024 KMM411025/KMM 511025 SAMSUNG Semiconductor Preliminary IM eg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION • 1M x 1 Organization • Performance range: The Samsung KMM411024, KMM411025, KMM511024 and KMM511025, are 1M x 1 dynamic RAM


    OCR Scan     		PDF KMM411024/KMM511024 KMM41102 5/KMM511025 KMM411024, KMM411025, KMM511024 KMM511025, KM41256/7 18-pin KMM411024 memory samsung

    Untitled

    Abstract: No abstract text available
    Text: bq2004 BENCHMARQ Fast-Charge IC Features General Description >• F ast charge a n d conditioning of nickel cadm ium or nickel-m etal hydride batteries The bq2004 F ast C harge IC provides co m p reh en siv e fa s t charge control functions to g eth er w ith high-speed


    OCR Scan     		PDF bq2004 bq2004 16-pin

    Untitled

    Abstract: No abstract text available
    Text: BENCHMARQ h Preliminary bq2004E Fast Charge IC Features General Description >• F ast charge and conditioning of nickel cadmium or nickel-metal hydride batteries The bq2004E Fast Charge IC provides comprehensive fast chaise control func­ tions together with high-speed switch­


    OCR Scan     		PDF bq2004E 150-mil OL-18 DG01f 16-pin