Untitled
Abstract: No abstract text available
Text: Memory Module Specifications KHX16C10B1B/8 8GB 1G x 64-Bit DDR3-1600 CL10 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 36ns (min.)
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KHX16C10B1B/8
64-Bit
DDR3-1600
240-Pin
260ns
64-bit
DDR31600
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PDF
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Untitled
Abstract: No abstract text available
Text: Memory Module Specifications KHX13C9B1/8 8GB 1G x 64-Bit DDR3-1333 CL9 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 36ns (min.) Maximum Operating Power
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KHX13C9B1/8
64-Bit
DDR3-1333
240-Pin
260ns
64-bit
DDR31333
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PDF
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Untitled
Abstract: No abstract text available
Text: KHX18C10/4 4GB 512M x 64-Bit DDR3-1866 CL10 240-Pin DIMM SPECIFICATIONS CL IDD 11 cycles Row Cycle Time (tRCmin) 48.125ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 35ns (min.) Maximum Operating Power 3.480 W*
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Original
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KHX18C10/4
64-Bit
DDR3-1866
240-Pin
125ns
260ns
64-bit
DDR3-1866
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PDF
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Untitled
Abstract: No abstract text available
Text: KHX18C10/8 8GB 1G x 64-Bit DDR3-1866 CL10 240-Pin DIMM SPECIFICATIONS CL IDD 11 cycles Row Cycle Time (tRCmin) 48.125ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 35ns (min.) Maximum Operating Power 3.924 W*
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Original
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KHX18C10/8
64-Bit
DDR3-1866
240-Pin
125ns
260ns
64-bit
DDR31866
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PDF
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Untitled
Abstract: No abstract text available
Text: Memory Module Specifications KHX16C9K2/16 16GB 8GB 1G x 64-Bit x 2 pcs. DDR3-1600 CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin)
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Original
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KHX16C9K2/16
64-Bit
DDR3-1600
240-Pin
260ns
KHX16C9K2/16
64-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: KHX1600C9D3LK2/8GX 8GB 4GB 512M x 64-Bit x 2 pcs. DDR3L-1600 CL9 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 11 cycles Row Cycle Time (tRCmin) 48.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 35ns (min.) Maximum Operating Power
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Original
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KHX1600C9D3LK2/8GX
64-Bit
DDR3L-1600
240-Pin
260ns
KHX1600C9D3LK2/8GX
64-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: Memory Module Specifications KHX16C10B1R/8 8GB 1G x 64-Bit DDR3-1600 CL10 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 36ns (min.)
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Original
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KHX16C10B1R/8
64-Bit
DDR3-1600
240-Pin
260ns
64-bit
DDR31600
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PDF
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Untitled
Abstract: No abstract text available
Text: KHX18C10T2K2/8 8GB 4GB 512M x 64-Bit x 2 pcs. DDR3-1866 CL10 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 11 cycles Row Cycle Time (tRCmin) 48.125ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 35ns (min.) Maximum Operating Power
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Original
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KHX18C10T2K2/8
64-Bit
DDR3-1866
240-Pin
125ns
260ns
KHX18C10T2K2/8
64-bit
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PDF
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DDR3 DIMM SPD JEDEC
Abstract: DDR3 SPD DDR3 1600 spd
Text: Memory Module Specifications KHX1600C10D3B1K2/16G 16G 8GB 2Rx8 1G x 64-Bit x 2 pcs. DDR3-1600 CL10 240-Pin DIMM Kit SPECIFICATIONS CL(IDD) 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin)
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Original
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KHX1600C10D3B1K2/16G
64-Bit
DDR3-1600
240-Pin
260ns
KHX1600C10D3B1K2/16G
64-bit
DDR3 DIMM SPD JEDEC
DDR3 SPD
DDR3 1600 spd
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PDF
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Untitled
Abstract: No abstract text available
Text: Memory Module Specifications KHX13C9B1B/8 8GB 1G x 64-Bit DDR3-1333 CL9 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 36ns (min.) Maximum Operating Power
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Original
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KHX13C9B1B/8
64-Bit
DDR3-1333
240-Pin
260ns
64-bit
DDR31333
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PDF
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CEER117
Abstract: No abstract text available
Text: Datasheet 1ch Gate Driver Providing Galvanic Isolation 2500Vrms Isolation Voltage BM60051FV-C General Description Key Specifications The BM60051FV-C is a gate driver with an isolation voltage of 2500Vrms, I/O delay time of 260ns, minimum input pulse width of 180ns, and incorporates the fault
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Original
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2500Vrms
BM60051FV-C
BM60051FV-C
2500Vrms,
260ns,
180ns,
CEER117
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PDF
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ddr3 1600 timing
Abstract: 1600 CL9 SPD data
Text: Memory Module Specifications KHX16C9/8 8GB 1G x 64-Bit DDR3-1600 CL9 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 36ns (min.) Maximum Operating Power
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Original
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KHX16C9/8
64-Bit
DDR3-1600
240-Pin
260ns
64-bit
DDR31600
ddr3 1600 timing
1600 CL9 SPD data
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PDF
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2460W
Abstract: No abstract text available
Text: Memory Module Specifications KHX1600C10D3B1/8G 8GB 2Rx8 1G x 64-Bit DDR3-1600 CL10 240-Pin DIMM SPECIFICATIONS CL IDD 9 cycles Row Cycle Time (tRCmin) 49.5ns (min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns (min.) Row Active Time (tRASmin) 36ns (min.)
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Original
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KHX1600C10D3B1/8G
64-Bit
DDR3-1600
240-Pin
260ns
64-bit
2460W
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PDF
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APT42F50B
Abstract: APT42F50S MIC4452 43A 013
Text: APT42F50B APT42F50S 600V, 43A, 0.13Ω Max trr ≤260ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
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APT42F50B
APT42F50S
260ns
APT42F50B
APT42F50S
MIC4452
43A 013
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PDF
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Untitled
Abstract: No abstract text available
Text: ADS1255 ADS1256 SBAS288E − JUNE 2003 − REVISED APRIL 2005 Very Low Noise, 24ĆBit AnalogĆtoĆDigital Converter FEATURES D 24 Bits, No Missing Codes DESCRIPTION The ADS1255 and ADS1256 are extremely low-noise, 24-bit analog-to-digital A/D converters. They provide
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ADS1255
ADS1256
SBAS288E
24Bit
30kSPS
ADS1256
24-bit
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PDF
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100 kilo ohms resistor specifications
Abstract: PCA96XX PCA9306 69RC BAT54A LPC932 P82B96 PCA9600 PCA9633 PCA9665
Text: I2C Maximum Clock Speed Calculator Mar 2009 BLSIC/BU MMS NXP semiconductors I2C-Bus Maximum Clock Speed Calculator Excel file of Calculator > Double click to open. If this is a PDF then go to URL
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Original
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p82b96
pca9600
i2c/pdf/pca9600
P82B715
/i2c/pdf/p82b715
100 kilo ohms resistor specifications
PCA96XX
PCA9306
69RC
BAT54A
LPC932
PCA9633
PCA9665
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PDF
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km41256 dram
Abstract: KM-41256 km41256 KM41256A-10 KM41257A TRCD D
Text: NMOS DRAM KM41256A/KM41257A 2 56 K x 1 Bit Dynamic RAM with Page/Nibble Mode DESCRIPTION FEATURES • Performance range KM41256/7A-10 taac tcAC •rc 100ns 50ns 200ns KM41256/7A-12 120ns 60ns 230ns KM41256/7A-15 150ns 75ns 260ns Page Mode capability-KM41256A
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OCR Scan
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KM41256A/KM41257A
256Kx
KM41256/7A-10
100ns
200ns
KM41256/7A-12
120ns
230ns
KM41256/7A-15
150ns
km41256 dram
KM-41256
km41256
KM41256A-10
KM41257A
TRCD D
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PDF
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Multiplexer Switches
Abstract: No abstract text available
Text: MULTIPLEXER/SWITCHES SELECTION GUIDE Multiplexers NUMBER OF CHANNELS R on TURN-ON TIME SUPPLY VOLTAGE DIGITAL I/O LTC 1390 8 45n 260ns +3 —» ±5 Serial Bi-directional LTC1391 8 45Q 260ns +3 DE-MUX Yes FEATURES Precision Low Power, Break-Before-M ake 3-W ire
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OCR Scan
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260ns
LTC1391
125C2
400ns/300ns
LTC202
125S2
Multiplexer Switches
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PDF
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MN41256-12
Abstract: MN41256-15 MN41256 41256-15 IR511 SFE 10.7 MX MN4125 FA-135
Text: P ANA SO NIC 6932852 IN DL/ELEK P A NA S ON I C -CIO 72 Î ËJ 1,^32852 0G[lb353 □ J ~ IND L.ELECTRON IC" . 72C 06353 t D 7 - 'fi- 2 î- tS' M M N 4 1 256-12, MN41256-15 MN41 256-1 2 , MN41 256-1 5 262,144 tr-y h N M O S ¥ < t S ' y # R A M 2 6 2 ,1 4 4 -B it N M O S Dynamic RAM
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OCR Scan
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MN41256-12,
MN41256-15
144-Bit
MN41256
MN41256
144-word
16-lead
300mil
MN41256-12
MN41256-15
41256-15
IR511
SFE 10.7 MX
MN4125
FA-135
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PDF
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S27121
Abstract: HB561009A-12 HB561009A-15 HB561009A-20 M040 hitachi nomenclature
Text: T A R G E T S P E C IF IC A T IO N *M040 HB561009A-12, H B561009A-15, H B561009A-20 P re lim in a ry MARCH, 1986 <§> H IT A C H I 262.144 x 9-bit Dynam ic Random Access M em ory Module • GENERAL DESCRIPTION The HB561009A is a 2304K dynamic random-access
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OCR Scan
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HB561009A-12,
HB561009A-15,
HB561009A-20
HB561009A
2304K
30-pin
HM50256CP,
18-pin
S27121
HB561009A-12
HB561009A-15
HB561009A-20
M040
hitachi nomenclature
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PDF
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MN4264
Abstract: kzz 72 JVC 0J DD01 MN-4264
Text: . PANASONIC INDL/ELEK -CIO 72 P A N A S O N IC IN D L , E L E C T R O N IC EEÌ t3ci 3 2 ñ S 2 O Oü t . 3 1 5 . - 3 | . 6932852 ^ E U '" 72C 0Ò315 DJ - Ÿ f - ? ? - / 7 ^ . MN4264 6 5 , 5 3 6 \£ y N M O S £ * - i •? i y ? R A M 6 5 , 5 3 6 - B i t N M O S Dynamic RAM
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OCR Scan
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MN4264
536-Bit
MN4264
i64Bf(
WSI57
kzz 72
JVC 0J
DD01
MN-4264
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PDF
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memory samsung
Abstract: No abstract text available
Text: KMM411024/K M M 511024 KMM411025/KMM 511025 SAMSUNG Semiconductor Preliminary IM eg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION • 1M x 1 Organization • Performance range: The Samsung KMM411024, KMM411025, KMM511024 and KMM511025, are 1M x 1 dynamic RAM
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OCR Scan
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KMM411024/KMM511024
KMM41102
5/KMM511025
KMM411024,
KMM411025,
KMM511024
KMM511025,
KM41256/7
18-pin
KMM411024
memory samsung
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PDF
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Untitled
Abstract: No abstract text available
Text: bq2004 BENCHMARQ Fast-Charge IC Features General Description >• F ast charge a n d conditioning of nickel cadm ium or nickel-m etal hydride batteries The bq2004 F ast C harge IC provides co m p reh en siv e fa s t charge control functions to g eth er w ith high-speed
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OCR Scan
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bq2004
bq2004
16-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: BENCHMARQ h Preliminary bq2004E Fast Charge IC Features General Description >• F ast charge and conditioning of nickel cadmium or nickel-metal hydride batteries The bq2004E Fast Charge IC provides comprehensive fast chaise control func tions together with high-speed switch
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OCR Scan
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bq2004E
150-mil
OL-18
DG01f
16-pin
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PDF
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