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    JRH Electronics 806-039-ZR18E26-3PF

    Circular connector
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    DigiKey 806-039-ZR18E26-3PF 99 1
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    JRH Electronics 806-039-MT18E26-3PF

    Circular connector
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    DigiKey 806-039-MT18E26-3PF 96 1
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    JRH Electronics 806-039-ME18E26-3PF

    Circular connector
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    DigiKey 806-039-ME18E26-3PF 95 1
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    JRH Electronics 806-039-NF18E26-3PF

    Circular connector
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    DigiKey 806-039-NF18E26-3PF 85 1
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    JRH Electronics 806-039-Z118E26-3PF

    Circular connector
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    DigiKey 806-039-Z118E26-3PF 49 1
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    263PF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P-Channel FET 100v to92

    Abstract: No abstract text available
    Text: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF TP2635 263pF TP2635 DSFP-TP2635 A102607 P-Channel FET 100v to92

    P2640

    Abstract: 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel
    Text: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF TP2640 DSFP-TP2640 A062609 P2640 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold -2.0V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown


    Original     		PDF TP2635 DSFP-TP2635 B081613

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TP2640 General Description Low threshold -2.0V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown


    Original     		PDF TP2640 DSFP-TP2640 B081613

    Untitled

    Abstract: No abstract text available
    Text: TP2635/TP2640 P- Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF TP2635/TP2640 DSFP-TP2635 TP2640 C032807

    Untitled

    Abstract: No abstract text available
    Text: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF TP2640 DSFP-TP2640 A091608

    TP2635

    Abstract: TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND
    Text: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 — -400V 15Ω -2.0V -0.7A


    Original     		PDF TP2635 TP2640 -350V TP2635N3 -400V TP2640LG TP2640N3 TP2640ND 678pF 263pF TP2635 TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND

    Untitled

    Abstract: No abstract text available
    Text: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF TP2635 DSFP-TP2635 A091508

    Untitled

    Abstract: No abstract text available
    Text: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling


    Original     		PDF TP2635 DSFP-TP2635 A062209

    Untitled

    Abstract: No abstract text available
    Text: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF TP2640 DSFP-TP2640 A042709

    a1026

    Abstract: TP2640N3-G
    Text: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF TP2640 MS-012, TP2640 DSFP-TP2640 A102607 a1026 TP2640N3-G

    TP2635

    Abstract: TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND
    Text: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 — -400V 15Ω -2.0V -0.7A


    Original     		PDF TP2635 TP2640 -350V TP2635N3 -400V TP2640LG TP2640N3 TP2640ND 678pF 263pF TP2635 TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND

    TP2635

    Abstract: TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND
    Text: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 TP2635ND -400V 15Ω -2.0V


    Original     		PDF TP2635 TP2640 -350V TP2635N3 TP2635ND -400V TP2640LG TP2640N3 TP2640ND 678pF TP2635 TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND

    Untitled

    Abstract: No abstract text available
    Text: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling


    Original     		PDF TP2640 DSFP-TP2640 A062609