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Ruland Manufacturing Co Inc LA92-M12:63-PF M12:63 ADJUSTABLE CLAMPING LEVER
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DigiKey	LA92-M12:63-PF	Bag			1	1 $14.65 10 $14.65 100 $14.65 1000 $14.65 10000 $14.65	Buy Now
JRH Electronics 806-039-NF18E26-3PF Circular connector
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DigiKey	806-039-NF18E26-3PF				1	1 $11359.73 10 $11359.73 100 $11359.73 1000 $11359.73 10000 $11359.73	Buy Now
JRH Electronics 806-039-Z118E26-3PF Circular connector
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DigiKey	806-039-Z118E26-3PF				1	1 $11359.73 10 $11359.73 100 $11359.73 1000 $11359.73 10000 $11359.73	Buy Now
JRH Electronics 806-039-ME18E26-3PF Circular connector
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DigiKey	806-039-ME18E26-3PF				1	1 $11359.73 10 $11359.73 100 $11359.73 1000 $11359.73 10000 $11359.73	Buy Now
JRH Electronics 806-039-ZR18E26-3PF Circular connector
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DigiKey	806-039-ZR18E26-3PF				1	1 $11359.73 10 $11359.73 100 $11359.73 1000 $11359.73 10000 $11359.73	Buy Now

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263PF Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
P-Channel FET 100v to92 Abstract: No abstract text available Text: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This	Original	TP2635 263pF TP2635 DSFP-TP2635 A102607 P-Channel FET 100v to92	PDF
P2640 Abstract: 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel Text: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This	Original	TP2640 DSFP-TP2640 A062609 P2640 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel	PDF
Untitled Abstract: No abstract text available Text: Supertex inc. TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold -2.0V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown	Original	TP2635 DSFP-TP2635 B081613	PDF
Untitled Abstract: No abstract text available Text: Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TP2640 General Description Low threshold -2.0V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown	Original	TP2640 DSFP-TP2640 B081613	PDF
Untitled Abstract: No abstract text available Text: TP2635/TP2640 P- Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This	Original	TP2635/TP2640 DSFP-TP2635 TP2640 C032807	PDF
Untitled Abstract: No abstract text available Text: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This	Original	TP2640 DSFP-TP2640 A091608	PDF
TP2635 Abstract: TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND Text: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 — -400V 15Ω -2.0V -0.7A	Original	TP2635 TP2640 -350V TP2635N3 -400V TP2640LG TP2640N3 TP2640ND 678pF 263pF TP2635 TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND	PDF
Untitled Abstract: No abstract text available Text: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This	Original	TP2635 DSFP-TP2635 A091508	PDF
Untitled Abstract: No abstract text available Text: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling	Original	TP2635 DSFP-TP2635 A062209	PDF
Untitled Abstract: No abstract text available Text: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This	Original	TP2640 DSFP-TP2640 A042709	PDF
a1026 Abstract: TP2640N3-G Text: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This	Original	TP2640 MS-012, TP2640 DSFP-TP2640 A102607 a1026 TP2640N3-G	PDF
TP2635 Abstract: TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND Text: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 — -400V 15Ω -2.0V -0.7A	Original	TP2635 TP2640 -350V TP2635N3 -400V TP2640LG TP2640N3 TP2640ND 678pF 263pF TP2635 TP2635N3 TP2640 TP2640LG TP2640N3 TP2640ND	PDF
TP2635 Abstract: TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND Text: TP2635 TP2640 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information † Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) SO-8 TO-92 Die† -350V 15Ω -2.0V -0.7A – TP2635N3 TP2635ND -400V 15Ω -2.0V	Original	TP2635 TP2640 -350V TP2635N3 TP2635ND -400V TP2640LG TP2640N3 TP2640ND 678pF TP2635 TP2635N3 TP2635ND TP2640 TP2640LG TP2640N3 TP2640ND	PDF
Untitled Abstract: No abstract text available Text: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling	Original	TP2640 DSFP-TP2640 A062609	PDF