MQE9

Abstract: 74674 HITEC 623 Hitachi DSA002752 GSM53 Nippon capacitors
Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

LC1F150

Abstract: LC1-F330 LC1-F225 telemecanique contactor lc1f265 LC1-F630 LC1-F115 telemecanique contactor LC1-F150 LC1F500 telemecanique contactors
Contextual Info: Telemecanique F-Series Contactor Coil Selection Guide Contactor Size Part No. LC1F115 to LC1F150 115A to 150A 3 & 4 pole contactors. LC1F185 to LC1F225 185A to 225A 3 & 4 Pole contactors LC1F265 & LC1F330 265A to 330A 3 & 4 Pole contactors LC1F400 – 400A 3 pole

TCA 3089

Abstract: tmp82c55* toshiba westinghouse co 11 tcc TMP82C255A TMP82C255AN TMP82C255AN-2 TMP82C265A TMP82C265AF TMP82C255AN-10 TMP82C55AX2
Contextual Info: TOSHIBA TMP82C255A/265A CMOS PROGRAMMABLE PERIPHERAL INTERFACE TM P82C 255AN -2 /TM P 82C 265A F -2 TM P 82C 255A N -10 / TM P82C 265AF-10 1. GENERAL DESCRIPTION A N D FEATURES The TMP82C255A/265A is a CMOS high speed programmable input/output

en 10204 3.1

Abstract: 10204 3.1b material certificate harting catalog han 8U EN 10204 3.1 for pressure gauge EN 10204 TYPE 2 harting han 8U D-32425 en 10204 265GS han harting catalog
Contextual Info: Data Sheet FieldIT SS/265GS/AS_4 2600T Series Pressure Transmitters Model 265GS Gauge Model 265AS Absolute standard overload Base accuracy : ±0.04% • Span limits – 0.2 to 60000kPa; 0.8inH2O to 8700psi – 0.3 to 3000kPa abs; 2.25mmHg to 435psia ■ Reliable sensing system coupled with very latest

Contextual Info: FDI025N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.5mΩ Features General Description • RDS on = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been

diode marking 226

Abstract: FDI025N06
Contextual Info: FDI025N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.5mΩ Features General Description • RDS on = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been

Contextual Info: FDP025N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.5mΩ Features General Description • RDS on = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been

ABB pressure transmitter series 2600T Model 265GC

Abstract: harting catalog han 8U 265GC ST EZ 725 2526-Form E data sheet IC 4435 265Gx 2513-V13 harting han 8U conn sil2
Contextual Info: Data Sheet Series 2600T Pressure Transmitters 265Gx, 265Ax SS/265GC/AC-EN_03 Model 265GC/GM/GG/GJ/GN for gauge pressure, Model 265AC/AM/AG/AJ/AN for absolute pressure, with direct mount seal Base accuracy: ±0.04% Span limits 6.0 . 60,000 kPa; 25 in H2O up to 8,700 psi

HD155121F

Abstract: Common PCN Handset Specification Phase 74674 GSM LNA BFP420 GSM ic gsm transceiver transceiver gsm MA 68698 pcn 8.5
Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

diode marking 226

Contextual Info: FDB024N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.4mΩ Features General Description • RDS on = 1.8mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been

harting catalog han 8U

Abstract: D-32425 harting han 8U ABB 265GS profibus pressure transmitter 2600t series model EN837-1 265GS 2600T C0920 265AS
Contextual Info: Data Sheet FieldIT SS/265GS/AS_3 2600T Series Pressure Transmitters Model 265GS Gauge Model 265AS Absolute standard overload Base accuracy : ±0.04% • Span limits – 0.2 to 60000kPa; 0.8inH2O to 8700psi – 0.3 to 3000kPa abs; 2.25mmHg to 435psia ■ Reliable sensing system coupled with very latest

Contextual Info: FDP025N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.5mΩ Features General Description • RDS on = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been

FDB024N06

Contextual Info: FDB024N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.4mΩ Features General Description • RDS on = 1.8mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been

FDP025N06

Contextual Info: FDP025N06 tm N-Channel PowerTrench MOSFET 60V, 265A, 2.5mΩ Features General Description • RDS on = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been

Contextual Info: Schottky Barrier Diode RBQ30T45A Datasheet lDimensions Unit : mm lApplication lStructure General rectification 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 15.0±0.4 0.2 8.0 8.0±0.2 12.0±0.2 3) High reliability 5.0±0.2 1 Anode

TO3 RthJA

Abstract: IRHM53064 IRHM54064 IRHM57064 IRHM58064
Contextual Info: PD - 93792C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57064 60V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHM57064 100K Rads (Si) IRHM53064 300K Rads (Si) RDS(on) 0.012Ω 0.012Ω ID 35A* 35A* IRHM54064 600K Rads (Si)

mosfet motor dc 48v

Abstract: IRHM53064 IRHM54064 IRHM57064 IRHM58064
Contextual Info: PD - 93792A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57064 60V, N-CHANNEL R5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHM57064 100K Rads (Si) IRHM53064 300K Rads (Si) RDS(on) 0.012Ω 0.012Ω ID 35A* 35A* IRHM54064 600K Rads (Si)

MT16LD464AG

Contextual Info: 8, 16 MEG x 64 SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT8LSDT864A, MT16LSDT1664A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC66-, PC100- and PC133-compliant

dram 72-pin simm 128mb

Abstract: PC133 registered reference design type 760 t85
Contextual Info: 8, 16 MEG x 64 SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT8LSDT864A, MT16LSDT1664A For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM • PC66-, PC100- and PC133-compliant

PC133 registered reference design

Contextual Info: ADVANCE 32, 64 MEG x 72 REGISTERED SDRAM DIMM SYNCHRONOUS DRAM MODULE MT18LSDT3272DG, MT18LSDT6472DG For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT FRONT VIEW 168-PIN DIMM

12V 35a rectifier circuit

Abstract: mosfet motor dc 48v IRHM53064 IRHM54064 IRHM57064 IRHM58064 93792D
Contextual Info: PD - 93792D RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA IRHM57064 60V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHM57064 100K Rads (Si) IRHM53064 300K Rads (Si) RDS(on) 0.012Ω 0.012Ω ID 35A* 35A* IRHM54064 600K Rads (Si)

14 pin relay

Abstract: 11 pin relay Socket IEC 947-7-1 2.5 mm terminal block 10 pin relay IEC 947-7-1 terminal block 400v IEC 947-7-1 terminal block TB521 68000-10 IEC 947-7-1 400v 14 pin relay socket
Contextual Info: Curtis TERMINAL BLOCKS Curtis We Build Confidence! Filtered Power Entry RFI Filters Custom Filters Curtis Family of Products Terminal Blocks Terminal Blocks DIN Rail Liquid Level Controllers PCB Mount Blocks Custom Terminal Blocks Curtis Industries A Div. of Powers Holdings, Inc.

PC133 registered reference design

Abstract: micron dram code 10EB2
Contextual Info: PRELIMINARY‡ 256MB, 512MB x72 184 Pin REGISTERED DDR SDRAM DIMMs DDR SDRAM DIMM MT18VDDT3272G, MT18VDDT6472G For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES • • • • • • • • • • •

MT8LSDT1664HG-10EB1

Abstract: SO-DIMM 144-pin
Contextual Info: 16 MEG x 64 SDRAM SODIMM SMALL-OUTLINE SDRAM MODULE MT8LSDT1664 L H For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT (Front View, 100 MHz) 144-Pin Small-Outline DIMM • JEDEC-standard, PC66 and PC100, rev 1.0, 144pin, small-outline, dual in-line memory module