Untitled
Abstract: No abstract text available
Text: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET
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SiR698DP
2002/95/EC
SiR698DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SiA445EDJ
Abstract: SIA445EDJ-T1-GE3
Text: New Product SiA445EDJ Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) Max. ID (A) 0.0165 at VGS = - 4.5 V - 12a 0.0185 at VGS = - 3.7 V - 12a 0.0300 at VGS = - 2.5 V a Qg (Typ.) 23 nC - 12 PowerPAK SC-70-6L-Single
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SiA445EDJ
SC-70-6L-Single
SC-70
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SIA445EDJ-T1-GE3
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Untitled
Abstract: No abstract text available
Text: Si2302DDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) Max. ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si2302DDS
2002/95/EC
O-236
OT-23)
Si2302DDS-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SMD Power Inductor CDMPIH60D28 Description • フェライトコア • 閉磁構造 • 低漏洩磁束 • LxW×H: 6.6×6.2×3.0 mm Max. • 製品重量:0.39 g 参考値 • 湿度感度レベル: 1 • RoHS 対応 • ハロゲンフリー対応 RoHS
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CDMPIH60D28
26-Dec-12
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Abstract: No abstract text available
Text: SMD Power Inductor CD104B Description • フェライトコア • 閉磁構造 • LxW×H: 10.3×9.3×4.3 mm Max. • 製品重量:1.2 g 参考値 • 湿度感度レベル: 1 • RoHS 対応 • AEC-Q200 信頼性試験準拠 RoHS Environmental Data • 動作温度範囲: -40℃～+125℃
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CD104B
AEC-Q200
26-Dec-12
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Untitled
Abstract: No abstract text available
Text: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET
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SiR698DP
2002/95/EC
SiR698DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si8416DB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) Max. ID (A)d 0.023 at VGS = 4.5 V 16 0.025 at VGS = 2.5 V 16 0.030 at VGS = 1.8 V 16 0.040 at VGS = 1.5 V 15 0.095 at VGS = 1.2 V 3 VDS (V) 8 Qg (Typ.) 17 nC S •
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Si8416DB
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SMD Power Inductor CDMPIH60D18 Description • フェライトコア • 閉磁構造 • 低漏洩磁束 • LxW×H: 6.6×6.2×2.0 mm Max. • 製品重量:0.25 g Ref. • 湿度感度レベル: 1 • RoHS 対応 • ハロゲンフロー対応 RoHS Halogen
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CDMPIH60D18
26-Dec-12
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Untitled
Abstract: No abstract text available
Text: SMD Power Inductor CDRH10D58R/A Description • フェライトドラムコア • 閉磁構造 • LxW×H:10.5×10.5×6.0 mm Max. • 製品重量: 2.2g 参考値 • 湿度感度レベル: 1 • RoHS 対応 • AEC-Q200 信頼性試験準拠 RoHS 外形寸法図 - [mm]
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CDRH10D58R/A
AEC-Q200
26-Dec-12
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Untitled
Abstract: No abstract text available
Text: SMD Power Inductor CDH80D48 Description • フェライトドラムコア • 閉磁構造 • LxW×H: 8.90×8.15×5.0 mm Max. • 製品重量t: 1.0g 参考値 • 湿度感度レベル: 1 • RoHS 対応 • ハロゲンフリー対応 RoHS Halogen Free
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CDH80D48
26-Dec-12
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IC P 621
Abstract: IC 621 DH-04
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FOR A LL 2 P U B L IC A T IO N R IG H TS R EVIS IO N S RESERVED. C O P Y R IG H T 50 AF D E S C R IP T IO N R EVISED RER ECR-11-018063 KH 26DEC1 1 CONTINUOUS STRIP ON 2 MATING TAB THK 3 WIRE SIZE IS #1 8 —#1 4 AWG
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ECR-11-018063
26DEC1
IC P 621
IC 621
DH-04
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Untitled
Abstract: No abstract text available
Text: 4 2 3 TH IS DRA W ING IS U N P U B L IS H E D . R E LE A S E D FO R P U B LIC A TIO N LOC ALL RIGHTS R ESERVED . AF REVISIONS D IS T 50 D E S C R IP T IO N REVISED PER E C R - 1 1 - 0 1 8 0 6 3 26DEC1 DWN APVD KH PD D D 7.75 -1 6 . 2 6 [.6 4 0 ] [.3 0 5 ]
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26DEC1
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g6353
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FOR A LL P U B L IC A T IO N R IG H TS RESERVED. C O P Y R IG H T D C r - .018 + .00' A 1471-9 3 /1 1 Ai REVIS IO N S 50 D E S C R IP T IO N R EVISED 1 RER ECR-11-018063 CO NTINU O US 2 26DEC1
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ECR-11-018063
26DEC1
g-63537
g6353
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Untitled
Abstract: No abstract text available
Text: 4 2 3 T H IS DRAW ING IS U N P U B L IS H E D . R E LE A S E D FO R P U B LIC A TIO N LOC ALL RIGHTS R ESERVED . AF REVISIONS D IS T 50 D E S C R IP T IO N REVISED PER E C R - 1 1 - 0 1 8 0 6 3 26DEC11 DWN APVD KH PD D -7 .6 5 [.3 0 1 ] [.7 7 5 ] C - 4.44 [ .1 7 5 ]
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26DEC11
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61944-1
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FOR A LL C O P Y R IG H T - P U B L IC A T IO N R IG H TS RESERVED. R3 D C 0.065 A 1471-9 3 /1 1 HOLE 2 REVIS IO N S Ai 50 D E S C R IP T IO N R EVISED .250 G L 12_ SECTION RER ECR-11-018063 26DEC1
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ECR-11-018063
26DEC1
L2002
61944-1
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G S 2 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - R E V IS IO N S .- 50 RESERVED. - LTR D E S C R IP T IO N R EVISED PER DATE E C R - 1 1-01 806 3 26DEC11 DWN APVD KH PD P D 1 CONTINUOUS
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26DEC11
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Untitled
Abstract: No abstract text available
Text: 2 4 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS R E V IS IO N S 50 RESERVED. - LTR D E S C R IP T IO N R EVISED PER DATE E C R - 1 1-01 806 3 26DEC11 DWN APVD KH PD D 1 CONTINUOUS STRIP
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26DEC11
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Untitled
Abstract: No abstract text available
Text: 2 THIS D R A WI N G IS UNPUBLISHED. RELEASED FOR ALL C O P Y R I G H T 20 PUBLICATION RI GHTS 20 LOC R ES ERVED. REVISIONS DIST AD 00 LTR DESCRIPTION DATE 26DEC1 1 R E V I S E D P E R E C O - 11 - 0 2 5 2 7 6 MA T E R I A L : HOUS I NG: LCP, G L A S S F I L L E D ,
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26DEC1
26DEC11
26DEC11
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - .- R E V IS IO N S RESERVED. 50 - LTR D E S C R IP T IO N R EVISED PER DATE E C R - 1 1-01 806 3 26DEC11 DWN A PVD KH PD D 7.62 [730CT]-
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26DEC11
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Untitled
Abstract: No abstract text available
Text: NOTES: TH I R D ANGLE REV I S I O N S PROJ . REV M A T E R I A L S A N D F I N IS H E S P L A T I N G T H I C K N E S S IN M I C R O - I N C H E S : BODY - BRASS, NICKEL PLATING CONTACT - BRASS & BERYLLIUM COPPER, SILVER PLATING 2.78 INSULATOR - P T F E , NATURAL
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RG-55/U,
55B/U,
58B/U,
58C/U,
142/U,
I42A/U,
12-Dec-1
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Untitled
Abstract: No abstract text available
Text: TH I R D A N G L E NOTES : 3. REV IS IO N S PROJ . RE V MATERIALS AND FINISHES: BODY - BRASS, NICKEL PLATED. CONTACT - BERYLLIUM COPPER, SILVER PLATED INSULATOR - P T F E , NATURAL ELECTRICAL: A. I M P E D A N C E : 5 0 O H M MECHANICAL: A. D U R A B I L I T Y : 5 0 0 C Y C L E S M I N .
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20-Aug-04
26-Dec-1
5/8-24UNEF-2A
UG-27A/U_
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Untitled
Abstract: No abstract text available
Text: NOTES: 1. MATERIALS AND FINISHES PLATING THICKNESS IN MICRO-INCHES : BODY - BRASS, NICKEL PLATING CONTACT - BRASS, SILVER PLATING INSULATOR - COPOLYMER OF STYRENE 2 . ELECTRICAL: A. IMPEDANCE: 50 OHM B. FREQUENCY RANGE: DC 0 - 4 GHz C. DIELECTRIC WITHSTANDING VOLTAGE:
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RD-DM11120601
10-Mar-08
07-Jan-10
26-Dec-11
5/8-24UNEF-2A
-255/U"
12-Dec-11
24-Dec-09
\DWG\CNPD\2900-USZ
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Untitled
Abstract: No abstract text available
Text: NOTES: FINISH PLATING THICKNESS MICRO-INCHES 1. MATERIALS AND FINISHES: BODY - BRASS, SILVER PLATING CONTA CT - BRASS, SILVER PLATING INSULATOR - P T F E , NATURAL 2. E L E C T R I C A L : A. I M P E D A N C E : 5 0 O H M B. F R E Q U E N C Y R A N G E :
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20-Aug-04
12-Dec-1
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Untitled
Abstract: No abstract text available
Text: R E VIS IO N S THIRD ANGLE PROJ. NOTES: 1. MATERIALS AND FINISHES PLATING THICKNESS IN MICRO-INCHES : BODY - BRASS, SILVER PLATING CONTACT - BRASS & BERYLLIUM COPPER, SILVER PLATING INSULATOR - PTFE, NATURAL 2 . ELECTRICAL: A. IMPEDANCE: 50 OHM B. FREQUENCY RANGE:
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05-Mar-08
21-Dec-09
26-Dec-11
Dec--11
21-Dec-09
12-Dec-11
\DWG\CNPD\31
\2208-AJSZ
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