Untitled
Abstract: No abstract text available
Text: TPC8075 MOSFETs Silicon N-Channel MOS U-MOS TPC8075 1. Applications • Lithium-Ion Secondary Batteries • Notebook PCs • Mobile Equipments 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 2.1 mΩ (typ.) (VGS = 10 V)
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TPC8075
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TPC8404
Abstract: No abstract text available
Text: TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel π-MOSV/N Channel π-MOSV TPC8404 Motor Dreive Switching Regulator Applications • • Unit: mm Low drain-source ON resistance: P Channel RDS (ON) = 1.85 Ω (typ.) N Channel RDS (ON) = 1.2 Ω (typ.)
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TPC8404
-250V)
TPC8404
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TPC8405
Abstract: No abstract text available
Text: TPC8405 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type P Channel U−MOS IV/N Channel U-MOS III TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm z Low drain-source ON resistance : P Channel RDS (ON) = 25 mΩ (typ.)
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TPC8405
TPC8405
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tpc8406
Abstract: TPC8406-H
Text: TPC8406-H TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type P-Channel/N-Channel Ultra-High-Speed U-MOSIII TPC8406-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications
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TPC8406-H
tpc8406
TPC8406-H
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Untitled
Abstract: No abstract text available
Text: TPC8402 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type π−MOSVI/U−MOSII TPC8402 Lithium Ion Secondary Battery Applications Notebook PCs Portable Equipment Applications l l l l Unit: mm Low drain−source ON resistance : P Channel RDS (ON) = 27 mΩ (typ.)
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TPC8402
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Untitled
Abstract: No abstract text available
Text: TPC8014 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III TPC8014 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm • Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 11 mΩ (typ.)
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TPC8014
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Untitled
Abstract: No abstract text available
Text: TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS II TPC8209 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm l Small footprint due to small and thin package l Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.)
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TPC8209
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LAL04 taiyo yuden
Abstract: LAL04 LAL04TB MS620J laL03 LHF15BB f0630 LAL05 945M0 20M20
Text: アキシャルリードインダクタ AXIAL LEADED INDUCTORS OPERATING TEMP K25VJ105C（製品自己発熱を含む） fIncluding self-generated heatg 特長 FEATURES Y自動挿入に対し極めて高い信頼性を有するインダクタ Y自動化高速ラインによる生産の為量産性に優れかつ高品質
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K25VJ105C
LAL04 taiyo yuden
LAL04
LAL04TB
MS620J
laL03
LHF15BB
f0630
LAL05
945M0
20M20
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Untitled
Abstract: No abstract text available
Text: TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOS II TPC8209 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications z Unit: mm Small footprint due to small and thin package z Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.)
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TPC8209
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TPC8115
Abstract: No abstract text available
Text: TPC8115 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOS IV TPC8115 ○ リチウムイオン 2 次電池用 ○ ノートブック PC 用 ○ 携帯電子機器用 • 単位: mm 小型, 薄型で実装面積が小さい。 •
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TPC8115
TPC8115
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TPC8041
Abstract: No abstract text available
Text: TPC8041 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS IV TPC8041 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 5.5 mΩ (typ.)
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TPC8041
TPC8041
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tpc8040
Abstract: TPC8040-H
Text: TPC8040-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPC8040-H High Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to a small and thin package •
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TPC8040-H
tpc8040
TPC8040-H
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TPC8050-H
Abstract: No abstract text available
Text: TPC8050-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPC8050-H Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications Unit: mm • Small footprint due to a small and thin package • High-speed switching
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TPC8050-H
TPC8050-H
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TPC8207
Abstract: A1930
Text: TPC8207 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII TPC8207 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.)
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TPC8207
TPC8207
A1930
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TPC8107 application circuit
Abstract: TPC8107 TPC8107 "pin compatible"
Text: TPC8107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSIII TPC8107 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.)
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TPC8107
TPC8107 application circuit
TPC8107
TPC8107 "pin compatible"
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TPC8404
Abstract: No abstract text available
Text: TPC8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel π-MOSV/N Channel π-MOSV TPC8404 Motor Dreive Switching Regulator Applications • • Unit: mm Low drain-source ON resistance: P Channel RDS (ON) = 1.85 Ω (typ.) N Channel RDS (ON) = 1.2 Ω (typ.)
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TPC8404
-100A
-250V)
TPC8404
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Untitled
Abstract: No abstract text available
Text: TPC8048-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPC8048-H Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications Unit: mm • Small footprint due to a small and thin package • High-speed switching
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TPC8048-H
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tpc8026
Abstract: SPF54
Text: TPC8026 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS IV TPC8026 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.)
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TPC8026
tpc8026
SPF54
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII T P C 8 1 03 LITHIUM ION BATTERY PORTABLE MACHINES AND TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC 8 5 RUHR" • Low Drain-Source ON Resistance : Rd S (ON)= 9.5mil (Typ.)
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TPC8103
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Untitled
Abstract: No abstract text available
Text: fl TOSHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M OSVI TPC8001 LITHIUM ION BATTERY PORTABLE MACHINES A N D TOOLS NOTE BOOK PC • • • • INDUSTRIAL APPLICATIONS Unit in mm 8 5 fl fi H fl Low Drain-Source ON Resistance : RßS (ON) ~ lömO (Typ.)
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TPC8001
g--10
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TENTATIVE TPC8007-H TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O SII TPC8007-H NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS SOP-8 LITHIUM ION BATTERY APPLICATIONS
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TPC8007-H
10//A
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8001 LITHIUM ION BATTERY PORTABLE MACHINES AN D TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC Low Drain-Source ON Resistance : Rd S (ON)= 15mfi (Typ.) High Forward Transfer Admittance: |Yfs| = llS (Typ.)
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TPC8001
15mfi
10//A
20kfl)
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 LITHIUM ION BATTERY INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC PORTABLE MACHINES AND TOOLS 8 5 RUHR" 2.5V Gate Drive. Low Drain-Source ON Resistance m O
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TPC8302
--20V)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPC8202 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8202 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 8 5 B n fl fl • 2.5V Gate Drive • Low Drain-Source ON Resistance
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TPC8202
10//A
20kfl)
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