Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    26JUL2002 Search Results

    26JUL2002 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FFPF15U40S FFPF15U40S Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220F 1 2 1. Cathode 2. Anode ULTRA FAST RECOVERY RECTIFIER


    Original
    FFPF15U40S O-220F PDF

    Untitled

    Abstract: No abstract text available
    Text: FJV4101R FJV4101R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJV3101R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector


    Original
    FJV4101R FJV3101R OT-23 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: FFPF30U60S FFPF30U60S Features • High voltage and high reliability • High speed switching • Low forward voltage Applications • • • • General purpose Switching mode power supply Free-wheeling diode for motor application Power switching circuits


    Original
    FFPF30U60S O-220F FFPF30U60STU O-220F PDF

    ffpf06f150s

    Abstract: No abstract text available
    Text: FFPF06F150S FFPF06F150S Features • High voltage and high reliability • High speed switching • Low forward voltage TO-220F Applications 1 • Suitable for damper diode in horizontal deflection circuits 2 1. Cathode 2. Anode DAMPER DIODE Absolute Maximum Ratings


    Original
    FFPF06F150S O-220F ffpf06f150s PDF

    FJX4008R

    Abstract: Marking S58
    Text: FJX4008R FJX4008R Switching Application Bias Resistor Built In 3 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47KΩ, R2=22KΩ) • Complement to FJX3008R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit


    Original
    FJX4008R FJX3008R OT-323 FJX4008R Marking S58 PDF

    Untitled

    Abstract: No abstract text available
    Text: FFPF10U30DN FFPF10U30DN Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220F 1 2 3 1. Anode 2.Cathode 3. Anode ULTRA FAST RECOVERY POWER RECTIFIER


    Original
    FFPF10U30DN O-220F PDF

    Untitled

    Abstract: No abstract text available
    Text: FJAF6812 FJAF6812 High Voltage Color Display Horizontal Deflection Output • High Collector-Base Breakdown Voltage : BVCBO = 1500V • High Switching Speed : tF typ. =0.1µs • For Color Monitor TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor


    Original
    FJAF6812 FJAF6812TU PDF

    Untitled

    Abstract: No abstract text available
    Text:     < =  7 < >       < < < <     +           ' -   7 "+&       


    Original
    PDF

    TRANSISTOR S2A

    Abstract: No abstract text available
    Text: FJX3906 FJX3906 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -40 Units V VCES Collector-Emitter Voltage


    Original
    FJX3906 OT-323 FJX3906TF TRANSISTOR S2A PDF

    fairchild 1n4150

    Abstract: FAIRCHILD DIODE ultra fast diode 1N4150
    Text: 1N4150 / FDLL4150 COLOR BAND MARKING 1ST BAND 2ND BAND DEVICE FDLL4150 BLACK ORANGE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics.


    Original
    1N4150 FDLL4150 FDLL4150 LL-34 DO-35 MMBD1201-1205 DO-35-2 fairchild 1n4150 FAIRCHILD DIODE ultra fast diode PDF

    Untitled

    Abstract: No abstract text available
    Text: FQB12N60 / FQI12N60 April 2000 QFET TM FQB12N60 / FQI12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQB12N60 FQI12N60 PDF

    Untitled

    Abstract: No abstract text available
    Text:     < =   /     62 < >    2     < < < <    /   2       2  /   2 $ / +  62 )#   2 /212 /


    Original
    PDF

    FJN598J

    Abstract: No abstract text available
    Text: FJN598J FJN598J Capacitor Microphone Applications • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic TO-92 1 1. Source 2. Gate 3. Drain Si N-channel Junction FET


    Original
    FJN598J FJN598J PDF

    13001* transistor

    Abstract: No abstract text available
    Text: FJX3004R FJX3004R Switching Application Bias Resistor Built In 3 • Switching circuit, Inverter, Interface circuit Driver Circuit, • Built in bias Resistor (R1=47KΩ, R2=47KΩ) • Complement to FJX4004R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit


    Original
    FJX3004R FJX4004R OT-323 13001* transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: FJN4302R FJN4302R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJN3302R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor


    Original
    FJN4302R FJN3302R PDF

    fms3815

    Abstract: fairchild 3815
    Text: www.fairchildsemi.com FMS3810/3815 Triple Video D/A Converters 3 x 8 bit, 150 Ms/s Features Description • 8-bit resolution • 150 megapixels per second – 0.2% linearity error • Sync and blank controls • 1.0V p-p video into 37.5Ω or 75Ω load • Internal bandgap voltage reference


    Original
    FMS3810/3815 FMS3810/3815 FMS3810 FMS3815 FMS3810KRC FMS3810KRCT fairchild 3815 PDF

    30N6S2D

    Abstract: No abstract text available
    Text: FGH30N6S2D / FGP30N6S2D / FGB30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs


    Original
    FGH30N6S2D FGP30N6S2D FGB30N6S2D FGH30N6S2D, FGP30N6S2D, FGB30N6S2D 100kHz 30N6S2D PDF

    30A, 600v DIODE

    Abstract: fairchild Igbts guide 40n6s2
    Text: FGH40N6S2 / FGP40N6S2 / FGB40N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability UIS . These LGC devices shorten delay


    Original
    FGH40N6S2 FGP40N6S2 FGB40N6S2 FGH40N6S2, FGB40N6S2 100kHz 30A, 600v DIODE fairchild Igbts guide 40n6s2 PDF

    tip42

    Abstract: TIP42BTU transistor tip41 tip42c
    Text: TIP42 SERIES TIP42/42A/42B/42C TIP42 SERIES(TIP42/42A/42B/42C) Medium Power Linear Switching Applications • Complement to TIP41/41A/41B/41C TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted


    Original
    TIP42 TIP42/42A/42B/42C) TIP41/41A/41B/41C O-220 TIP42 TIP42A TIP42B TIP42C TIP42BTU transistor tip41 PDF

    marking codes fairchild

    Abstract: 1175AR3C40 Fairchild, 741 op-amp marking codes fairchild DIP
    Text: www.fairchildsemi.com TMC1175A Video A/D Converter 8 bit, 40 Msps Features Description • • • • • • • • • • The TMC1175A analog-to-digital A/D converter employs a two-step flash architecture to convert analog signals into 8-bit digital words at sample rates of up to 40 Msps


    Original
    TMC1175A 100mW TMC1175A TMC1175AM7C30 TMC1175AN2C30 TMC1175AN2B30 TMC1175AR3C30 marking codes fairchild 1175AR3C40 Fairchild, 741 op-amp marking codes fairchild DIP PDF

    FQB11P06TM

    Abstract: No abstract text available
    Text: QFET TM FQB11P06 / FQI11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original
    FQB11P06 FQI11P06 FQI11P06TU O-262 FQB11P06TM PDF

    34w02

    Abstract: 34w02 marking 416-R
    Text: FM34W02U 2K-Bit Standard 2-Wire Bus Interface Serial EEPROM with Full Array Write Protect Designed with Permanent Write-Protection for First 128 Bytes for Serial Presence Detect Application on Memory Modules PC100/PC133 Compliant General Description Features


    Original
    FM34W02U PC100/PC133 FM34W02ULMT8X FM34W02ULEM8X FM34W02ULMT8 34W02 34w02 marking 416-R PDF

    Untitled

    Abstract: No abstract text available
    Text: FFPF06U40DP FFPF06U40DP Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220F 1 2 3 1. Cathode 2.Anode 3. Cathode ULTRA FAST RECOVERY POWER RECTIFIER


    Original
    FFPF06U40DP O-220F PDF

    FFPF30U20STU

    Abstract: No abstract text available
    Text: FFPF30U20S FFPF30U20S Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220F 1 2 1. Cathode 2. Anode ULTRA FAST RECOVERY POWER RECTIFIER


    Original
    FFPF30U20S O-220F FFPF30U20STU PDF