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    26M TRANSISTOR Search Results

    26M TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    26M TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MO-187

    Abstract: ZXT14P40DX ZXT14P40DXTA ZXT14P40DXTC DSA003747
    Text: ZXT14P40DX SuperSOT4 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 26m ; IC= -4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		PDF ZXT14P40DX ZXT14P40DXTA 12max: MO-187 ZXT14P40DX ZXT14P40DXTA ZXT14P40DXTC DSA003747

    ZXTP19060CFF

    Abstract: ZXTN19060CFF ZXTN19060CFFTA
    Text: ZXTN19060CFF 60V, SOT23F, NPN high gain power transistor Summary BVCEX > 160V BVCEO > 60V BVECO > 6V IC cont = 5.5A VCE(sat) < 45mV @ 1A RCE(sat) = 26m⍀ PD = 1.5W Complementary part number ZXTP19060CFF Description C This mid voltage NPN transistor has been designed for applications


    Original     		PDF ZXTN19060CFF OT23F, ZXTP19060CFF OT23F ZXTP19060CFF ZXTN19060CFF ZXTN19060CFFTA

    ceh2288

    Abstract: No abstract text available
    Text: CEH2288 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 5.2A , RDS ON = 26mΩ @VGS = 4.5V. RDS(ON) = 35mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. D2(5) D1(2) TSOP-6 package.


    Original     		PDF CEH2288 ceh2288

    TRANSISTOR MARKING 1d8

    Abstract: TS16949 ZXTN19020DFF ZXTP19020DFF ZXTP19020DFFTA
    Text: ZXTP19020DFF 20V, SOT23F, PNP medium power transistor Summary BVCEO > -20V BVECO > -4V IC cont = 5.5A VCE(sat) < 44mV @ 1A RCE(sat) = 26mΩ PD = 1.5W Complementary part number: ZXTN19020DFF Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP19020DFF OT23F, ZXTN19020DFF D-81541 TRANSISTOR MARKING 1d8 TS16949 ZXTN19020DFF ZXTP19020DFF ZXTP19020DFFTA

    Untitled

    Abstract: No abstract text available
    Text: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details JMGSP-26M Product Details Military/Aerospace High Performance Relays


    Original     		PDF JMGSP-26M JMGSP-26M M39016

    Untitled

    Abstract: No abstract text available
    Text: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details JMGSC-26M Product Details Military/Aerospace High Performance Relays


    Original     		PDF JMGSC-26M JMGSC-26M M39016

    Untitled

    Abstract: No abstract text available
    Text: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details JMGACD-26M Product Details Military/Aerospace High Performance Relays


    Original     		PDF JMGACD-26M JMGACD-26M M39016

    ZXTN19060CFF

    Abstract: ZXTN19060CFFTA ZXTP19060CFF marking 1E4
    Text: ZXTN19060CFF 60V, SOT23F, NPN high gain power transistor Summary BVCEX > 160V BVCEO > 60V BVECO > 6V IC cont = 5.5A VCE(sat) < 45mV @ 1A RCE(sat) = 26m⍀ PD = 1.5W Complementary part number ZXTP19060CFF Description C This mid voltage NPN transistor has been designed for applications


    Original     		PDF ZXTN19060CFF OT23F, ZXTP19060CFF OT23F ZXTN19060CFF ZXTN19060CFFTA ZXTP19060CFF marking 1E4

    Untitled

    Abstract: No abstract text available
    Text: CEM6186 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 8A, RDS ON = 26mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		PDF CEM6186

    Untitled

    Abstract: No abstract text available
    Text: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details JMGST-26M Product Details Military/Aerospace High Performance Relays


    Original     		PDF JMGST-26M JMGST-26M M28776

    Untitled

    Abstract: No abstract text available
    Text: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details JMGAC-26M Product Details Military/Aerospace High Performance Relays


    Original     		PDF JMGAC-26M JMGAC-26M M39016

    Untitled

    Abstract: No abstract text available
    Text: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details JMGAT-26M Product Details Military/Aerospace High Performance Relays


    Original     		PDF JMGAT-26M JMGAT-26M M28776

    Untitled

    Abstract: No abstract text available
    Text: CED4201/CEU4201 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -28A, RDS ON = 26mΩ @VGS = -10V. RDS(ON) = 36mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		PDF CED4201/CEU4201 O-251 O-252 O-251

    Untitled

    Abstract: No abstract text available
    Text: ZXTP19020DFF 20V, SOT23F, PNP medium pow er transistor Summary BV CEO > -20V BV ECO > -4V IC cont = 5.5A V CE(sat) < 44mV @ 1A RCE(sat) = 26mΩ PD = 1.5W Complementary part number: ZXTN19020DFF Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP19020DFF OT23F, ZXTN19020DFF D-81541

    Untitled

    Abstract: No abstract text available
    Text: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details JMGACDG-26M Product Details Military/Aerospace High Performance Relays


    Original     		PDF JMGACDG-26M JMGACDG-26M M39016/18-048M

    Untitled

    Abstract: No abstract text available
    Text: JMGSC-26M Product Details Military/Ae rospace High Pe rform an ce Re lays Previous 1 [2] 3 4 5 . 20 Next Not EU RoHS or ELV Compliant Quick Links Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products Contact Us About This


    Original     		PDF JMGSC-26M M39016 M39016/41-036M

    CEM8938

    Abstract: No abstract text available
    Text: CEM8938 Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES 30V, 7A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. -30V, -6A, RDS(ON) = 38mΩ @VGS = -10V. RDS(ON) = 57mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEM8938 CEM8938

    CEM8938

    Abstract: No abstract text available
    Text: CEM8938 Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES 30V, 7A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. -30V, -6A, RDS(ON) = 38mΩ @VGS = -10V. RDS(ON) = 57mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEM8938 CEM8938

    Untitled

    Abstract: No abstract text available
    Text: JMGST-26M Product Details Military/Ae rospace High Pe rform an ce Re lays Not EU RoHS or ELV Compliant Previous 1 . 6 7 [8] 9 10 . 20 Next Quick Links Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products Contact Us About This Product


    Original     		PDF JMGST-26M T-26M M28776 M28776/7-006M

    Untitled

    Abstract: No abstract text available
    Text: My Account C hange Tyco Electronics Se a rch by Ke yword or Pa rt # Products Documentation Resources My Account Customer Support Home > Products > By Type > Relays > Product Feature Selector > Product Details JMGAPD-26M Product Details Military/Aerospace High Performance Relays


    Original     		PDF JMGAPD-26M JMGAPD-26M M39016

    CEM3138

    Abstract: 75a17
    Text: CEM3138 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 9.1A, RDS ON = 15mΩ @VGS = 10V. RDS(ON) = 21mΩ @VGS = 4.5V. 30V, 6.9A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 35mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEM3138 CEM3138 75a17

    CEM4600

    Abstract: TF36
    Text: CEM4600 Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES 30V, 7.3A, RDS(ON) = 18mΩ (typ) @VGS = 10V. RDS(ON) = 26mΩ (typ) @VGS = 4.5V. -30V, -4.6A, RDS(ON) = 45mΩ (typ) @VGS = -10V. RDS(ON) = 72mΩ (typ) @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON).


    Original     		PDF CEM4600 CEM4600 TF36

    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32420LA-S •General description ■Features ELM32420LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=20V Id=45A Rds(on) < 14mΩ (Vgs=5V) Rds(on) < 26mΩ (Vgs=2.5V)


    Original     		PDF ELM32420LA-S ELM32420LA-S P1402CDG O-252

    Untitled

    Abstract: No abstract text available
    Text: JMGAPD-26M Product Details Military/Ae rospace High Pe rform an ce Re lays Previous 1 [2] 3 4 5 . 20 Next Not EU RoHS or ELV Compliant Quick Links Check Pricing & Availability Search for Tooling Product Feature Selector Compare Products Contact Us About This


    Original     		PDF JMGAPD-26M JMGAPD-26M M39016 M39016/18-030M