Diode BYW 56

Abstract: diodes byw
Contextual Info: BYW 27-50.BYW 27-1000 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor ,2 Axial lead diode Standard silicon rectifier diodes BYW 27-50.BYW 27-1000 8  9  3  9  9

IC-WKM

Abstract: iC-Haus GmbH opto count-1 laser diode driver circuit automatic power control IC-HAUS light
Contextual Info: Driving Laser Diodes Uwe M. Malzahn iC-Haus GmbH Integrated Circuits GERMANY Webinar, April 27, 2006 Uwe M. Malzahn iC-Haus GmbH Driving Laser Diodes April 27, 2006 1 / 35 April 27, 2006 2 / 35 Introduction iC-Haus Founded in 1984 by Dr. Heiner Flocke and

740nm chip

Abstract: photoreceptor 740nm photoreceptor drum stb 236 LPH-13216-27 LPH13216270-0
Contextual Info: Ordering number : EN5900 LPH-13216-27 Red Laser Diode LPH-13216-27 LED PRINTHEAD 1. Description LPH-13216-27 is an LED imaging device which is used to illuminate a moving photoreceptor within an electronic printer. It has 2560 bit Driver ICs which consist of shift register, load , strobe and output driver.

Diode Single Bridge

Abstract: R2 KL 108R2
Contextual Info: VUO 27 IdAV = 28 A VRRM = 600-1200 V Three Phase Rectifier Bridge Preliminary data 600 800 1200 VUO 27-06NO7 VUO 27-08NO7 VUO 27-12NO7 Symbol Conditions IdAV ① TC = 100°C, module IFSM TVJ = 45°C; VR = 0; I2t K Maximum Ratings 28 A t = 10 ms 50 Hz , sine

sc08440

Abstract: smd diode L30 STP27N3LH5 SMD mosfet MARKING code TC STU27 l30 diode smd POWER MOSFET P1 smd marking code STD27N3LH5
Contextual Info: STD27N3LH5, STP27N3LH5 STU27N3LH5 N-channel 30 V, 0.014 Ω, 27 A, DPAK, IPAK, TO-220 STripFET V Power MOSFET Features Type VDSS RDS on max ID STD27N3LH5 30 V 0.019 Ω 27 A STP27N3LH5 30 V 0.020 Ω 27 A STU27N3LH5 30 V 0.020 Ω 27 A • RDS(on) * Qg industry benchmark

STP27N3LH5

Abstract: STD27 STD27N3LH5 sc08440
Contextual Info: STD27N3LH5, STP27N3LH5 STU27N3LH5 N-channel 30 V, 0.014 Ω, 27 A, DPAK, IPAK, TO-220 STripFET V Power MOSFET Features Type VDSS RDS on max ID STD27N3LH5 30 V 0.019 Ω 27 A STP27N3LH5 30 V 0.020 Ω 27 A STU27N3LH5 30 V 0.020 Ω 27 A • RDS(on) * Qg industry benchmark

sc08440

Abstract: STU27 27N3LH5 STD27N3LH5 STP27N3LH5 Part Marking TO-220 STMicroelectronics
Contextual Info: STD27N3LH5, STP27N3LH5 STU27N3LH5 N-channel 30 V, 0.014 Ω, 27 A, DPAK, IPAK, TO-220 STripFET V Power MOSFET Features Type VDSS RDS on max ID STD27N3LH5 30 V 0.019 Ω 27 A STP27N3LH5 30 V 0.020 Ω 27 A STU27N3LH5 30 V 0.020 Ω 27 A • RDS(on) * Qg industry benchmark

Contextual Info: ECO-PAC 1 Three Phase Rectifier Bridge PSD 27 IdAV = 28 A VRRM= 600-1200V Preliminary Data Sheet V RSM VRRM Type V DSM VDRM V (V) 700 600 PSD 27/06 900 800 PSD 27/08 1300 1200 PSD 27/12 + ~H ~A ~N Symbol Test Conditions I*dAV IFSM TC = 100 °C, ∫ i 2 dt

PSD 27

Abstract: DAA40
Contextual Info: SLIM-PACTM Three Phase Rectifier Bridge PSD 27 IdAV VRRM = 28 A = 600-1200V Preliminary Data Sheet VRSM VRRM Type VDSM VDRM V (V) 700 600 PSD 27/06 900 800 PSD 27/08 1300 1200 PSD 27/12 + ~H ~A ~N K Features A TVJ = 45 °C t = 10 ms (50 Hz), sine 100 A VR = 0

Contextual Info: BYW 27-50.BYW 27-1000 ,2 Axial lead diode Standard silicon rectifier diodes BYW 27-50.BYW 27-1000 8  9  3  9  9 + /+  3  9  9 +   9    9 2  =>* 0$1 =>* 0$' =>* 0$ =>* 0$" =>* 0$ =>* 0$@ #88 # 1 ' 

diodes byw

Abstract: diode BYW
Contextual Info: BYW 27-50.BYW 27-1000 ,2 Axial lead diode Standard silicon rectifier diodes BYW 27-50.BYW 27-1000 8  9  3  9  9 + /+  3  9  9 +   9    9 2  =>* 0$1 =>* 0$' =>* 0$ =>* 0$" =>* 0$ =>* 0$@ #88 # 1 ' 

DS099

Contextual Info: 1 Spartan-3 FPGA Family Data Sheet DS099 June 27, 2013 Module 1: Introduction and Ordering Information DS099 v3.1 June 27, 2013 Product Specification Module 4: Pinout Descriptions DS099 (v3.1) June 27, 2013 • Pin Descriptions • Introduction • Features

Contextual Info: BYW 27-50.BYW 27-1000 ,2 Axial lead diode Standard silicon rectifier diodes BYW 27-50.BYW 27-1000 8  9  3  9  9 + /+  3  9  9 +   9    9 2  =>* 0$1 =>* 0$' =>* 0$ =>* 0$" =>* 0$ =>* 0$@ #88 # 1 ' 

Contextual Info: OP-27 OP-27 Low Noise Operational Amplifier Description The OP-27 is designed for instrumentation grade signal conditioning where low noise both spectral density and burst , wide bandwidth, and high slew rate are required along with low input offset voltage, low

FDS4925

Abstract: ADM1032ARMZ-2REEL kbc1021 compal LA-3031P capacitor 220uf 100V esr BCM5753M AES2501 ic1628 SLB 9635 TT
Contextual Info: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile Yonah uFCPGA with Intel Calistoga_GM+ICH7-M core logic 2006-02-27 3 3 REV:0.5 Feb 27, 2007 4 4 Compal Secret Data Security Classification 2006/02/27 Issued Date 2007/02/27 Deciphered Date THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

PA932

Contextual Info: PA93/27 PA93/27 PPrroodduucctt TIencnhonvoal toi go yn FFrroomm High Voltage Power Operational Amplifiers FEATURES DESCRIPTION The PA93/27 is a high voltage, low quiescent current MOSFET operational amplifier designed as a low cost solution for driving continuous output currents up to 8A

Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD5V3U1U Series Uni-directional Ultra-Low Capacitance ESD / Transient Protection Diode ESD5V3U1U-02LS ESD5V3U1U-02LRH Data Sheet Revision 1.0, 2011-05-27 Final Industrial and Multi-Market Edition 2011-05-27 Published by

AN140

Abstract: AN210 C166 ESD5V3U1U-02LRH ESD5V3U1U-02LS IEC61000-4-4 SC74 MDDI 1.5 MDDI aurix
Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD5V3U1U Series Uni-directional Ultra-Low Capacitance ESD / Transient Protection Diode ESD5V3U1U-02LS ESD5V3U1U-02LRH Data Sheet Revision 1.0, 2011-05-27 Final Industrial and Multi-Market Edition 2011-05-27 Published by

jointal Z

Abstract: 5n fast recovery diodes 30DL4 diode 30dl4 F10P20F circuit SCHEMATIC DIAGRAM SMPS 12v 5A diode RP 6040 31DF2 diode f5kq100 smps 8085
Contextual Info: APPLICATION NOTE FRED U ltr a F a st R ec o v er y AND SCHOTTKY BARRIER D i ODE SBD APPLICATION NOTE TABLE OF CONTENTS Introduction. 27 1.Fast Recovery Diode . 27 2 .FRD and SBD .'. 28

SCR Applications Handbook

Abstract: welding transformer SCR "SCR applications Handbook" thyristor handbook parallel triac induction heater IR SCR handbook SCR Handbook scr stud 218 induction heating circuits
Contextual Info: s Contents PREFACE State of the Art . 5 CHAPTER 1 DEVICE CH A RA CTERISTICS. 27 Reverse Blocking Triode Thyristor-SCR . 27 Bidirectional Triode T hyristor-Triac .

3 to 10 GHz mixer

Abstract: 27 32 GHz Mixer marking code 02 mmic
Contextual Info: 27 - 32 GHz GaAs Mixer MMIC 27 - 32 GHz Mixer Preliminary Data Sheet • • • • • Monolithic Microwave Integrated Circuit MMIC Single Balanced Mixer (coplanar design) Input/Output matched to 50 Ω Frequency range: 27 GHz to 32 GHz Conversion Loss 9 dB @ PLO = 11 dBm

Contextual Info: 27 - 32 GHz GaAs Mixer MMIC 27 - 32 GHz Mixer Preliminary Data Sheet • • • • • Monolithic Microwave Integrated Circuit MMIC Single Balanced Mixer (coplanar design) Input/Output matched to 50 Ω Frequency range: 27 GHz to 32 GHz Conversion Loss 9 dB @ PLO = 11 dBm

DD1800

Abstract: DD1000 DD1200 DD1400 DD1600 DD300 DD600
Contextual Info: DD300 . DD1800 DD300 . DD1800 Fast Switching High Voltage Silicon Rectifier Diodes Schnelle Silizium-Hochspannungs-Gleichrichterdioden Version 2007-03-16 DD1000.1800 24 ±0.1 Ø3 Ø 2.5±0.1 12 ±0.05 +3 Ø 0.5 Ø 0.6 24 27 6.5 ±0.5 ±0.5 27 +3 DD300.600

Contextual Info: • T Ö E Ö 'm D 0 G ? C1Ö4 ÖDÖ ■ R H U K /L ig h t Emitting Diodes — SLB-27 SLB-27 Series x 3.8mm Small-Sized Rectangular Lamps '}'M 8 B 7 > 7 ° 2 Series • W fê 'tf& III/D im e n s io n s (Unit : mm) SLB -27 -> U — X l i , 2 X 3.8m m (7)/M U