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    2716 IC DATA SHEET Search Results

    2716 IC DATA SHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation

    2716 IC DATA SHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4 digit 7 segment lcd display S20110712

    Abstract: 5962F9863101V9A 5962F9863101VCC 5962F9863101VXC ACS30DMSR-03 ACS30KMSR-03 ACS30MS CDIP2-T14 MIL CDFP3-F14
    Text: ACS30MS Data Sheet July 1999 File Number Radiation Hardened 8-Input NAND Gate Features The Radiation Hardened ACS30MS is an 8-Input NAND Gate. A HIGH level on all inputs results in a LOW level on the Y output. A LOW level on any input results in a HIGH level on the Y output. All inputs are buffered and the


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    PDF ACS30MS ACS30MS MIL-PRF-38535 4 digit 7 segment lcd display S20110712 5962F9863101V9A 5962F9863101VCC 5962F9863101VXC ACS30DMSR-03 ACS30KMSR-03 CDIP2-T14 MIL CDFP3-F14

    transistor C3866

    Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
    Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)


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    HSP50415

    Abstract: HSP50415EVAL1 HSP50415VI Q100
    Text: HSP50415 ADV ANCE I NF O R MA T ION Data Sheet January 2000 Wideband Programmable Modulator WPM File Number 4559.3 Features • Output Sample Rates to 100MSPS The HSP50415 Wideband Programmable Modulator (WPM) is a quadrature amplitude modulator/upconverter designed


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    PDF HSP50415 100MSPS HSP50415 16-bit HSP50415EVAL1 HSP50415VI Q100

    Y5 smd

    Abstract: y6 smd transistor ACS04MS "silicon on sapphire" cmos SENSOR 15um SMD TRANSISTOR Y1 smd transistor y5 y4 smd transistor ACS04DMSR-03 ACS04HMSR-03
    Text: ACS04MS Data Sheet November 1998 File Number Radiation Hardened Hex Inverter Features The Radiation Hardened ACS04MS is a Hex Inverter. This device simply inverts the level present on each input. All inputs are buffered and the outputs are designed for balanced propagation delay and transition times.


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    PDF ACS04MS ACS04MS MIL-PRF-38535 Y5 smd y6 smd transistor "silicon on sapphire" cmos SENSOR 15um SMD TRANSISTOR Y1 smd transistor y5 y4 smd transistor ACS04DMSR-03 ACS04HMSR-03

    an5296

    Abstract: AN5296 application note AN5296 Application of the CA3018 an5296 ca3018 CA3083 AN5296 Application note CA3018 CA3018 Monolithic Transistor Pair NPN Two monolithic transistors CA3083M
    Text: CA3083 Data Sheet September 1998 File Number 481.4 General Purpose High Current NPN Transistor Array Features The CA3083 is a versatile array of five high current to 100mA NPN transistors on a common monolithic substrate. In addition, two of these transistors (Q1 and Q2) are


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    PDF CA3083 CA3083 100mA) 100mA an5296 AN5296 application note AN5296 Application of the CA3018 an5296 ca3018 AN5296 Application note CA3018 CA3018 Monolithic Transistor Pair NPN Two monolithic transistors CA3083M

    vp 3082

    Abstract: Common collector configuration transistor Common collector configuration transistor Common Base configuration CA3081 F16.3 Package CA3082 am 2716 data sheet decoder Ic led display board DR2000
    Text: CA3081, CA3082 Data Sheet September 1998 File Number 480.4 General Purpose High Current NPN Transistor Arrays Features CA3081 and CA3082 consist of seven high current to 100mA silicon NPN transistors on a common monolithic substrate. The CA3081 is connected in a common emitter


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    PDF CA3081, CA3082 CA3081 CA3082 100mA) vp 3082 Common collector configuration transistor Common collector configuration transistor Common Base configuration F16.3 Package am 2716 data sheet decoder Ic led display board DR2000

    cdfp4-f16

    Abstract: 5962F9863301V9A 5962F9863301VCC 5962F9863301VXC ACS147DMSR-03 ACS147HMSR-03 ACS147KMSR-03 ACS147MS
    Text: ACS147MS Data Sheet Radiation Hardened 10-to-4 Line Priority Encoder These nine-input priority encoders accept data from nine active LOW inputs and provide a binary representation on the four active LOW outputs. A priority is assigned to each input so that when two or more inputs are simultaneously


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    PDF ACS147MS 10-to-4 10-to-4-line ACS147MS cdfp4-f16 5962F9863301V9A 5962F9863301VCC 5962F9863301VXC ACS147DMSR-03 ACS147HMSR-03 ACS147KMSR-03

    5962F9862501V9A

    Abstract: 5962F9862501VCC 5962F9862501VXC ACS132HMSR-03 ACS132MS
    Text: ACS132MS Data Sheet Radiation Hardened Quad 2-Input NAND Schmitt Trigger The Radiation Hardened ACS132MS is a Quad 3-Input NAND Gate with Schmitt Trigger inputs. When any input to one of the gates is at a LOW level, the corresponding Y output will be HIGH. A HIGH level on both inputs will cause the output for that


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    PDF ACS132MS ACS132MS 400mV 5962F9862501V9A 5962F9862501VCC 5962F9862501VXC ACS132HMSR-03

    b3 smd transistor

    Abstract: SMD Transistors nc b4 5962F9862401V9A 5962F9862401VCC 5962F9862401VXC ACS32DMSR-03 ACS32HMSR-03 ACS32KMSR-03 ACS32MS y4 smd transistor
    Text: ACS32MS Data Sheet November 1998 File Number Radiation Hardened Quad 2-Input OR Gate Features The Radiation Hardened ACS32MS is a Quad 2-Input OR Gate. For each gate, a HIGH level on either A or B input results in a HIGH level on the Y output. A LOW level on both


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    PDF ACS32MS ACS32MS MIL-PRF-38535 b3 smd transistor SMD Transistors nc b4 5962F9862401V9A 5962F9862401VCC 5962F9862401VXC ACS32DMSR-03 ACS32HMSR-03 ACS32KMSR-03 y4 smd transistor

    cmos SENSOR 15um

    Abstract: smd transistor y5 y6 smd transistor 5962F9862301V9A 5962F9862301VCC 5962F9862301VXC ACS14DMSR-03 ACS14HMSR-03 ACS14KMSR-03 ACS14MS
    Text: ACS14MS Data Sheet Radiation Hardened Hex Inverting Schmitt Trigger The Radiation Hardened ACS14MS is a Hex Inverting Schmitt Trigger. This device simply inverts the level present on each input. The Schmitt Trigger input stage provides 400mV Min of hysteresis and permits input signals with


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    PDF ACS14MS ACS14MS 400mV cmos SENSOR 15um smd transistor y5 y6 smd transistor 5962F9862301V9A 5962F9862301VCC 5962F9862301VXC ACS14DMSR-03 ACS14HMSR-03 ACS14KMSR-03

    5962F9860101V9A

    Abstract: 5962F9860101VCC 5962F9860101VXC ACS02DMSR-03 ACS02MS
    Text: ACS02MS Data Sheet November 1998 File Number Radiation Hardened Quad 2-Input NOR Gate Features The Radiation Hardened ACS02MS is a Quad 2-Input NOR Gate. For each gate, a HIGH level on either A or B input results in a LOW level on the Y output. A LOW level on both


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    PDF ACS02MS ACS02MS MIL-PRF-38535 5962F9860101V9A 5962F9860101VCC 5962F9860101VXC ACS02DMSR-03

    ic 2716 eprom

    Abstract: ic 2716 pin diagram of ic 2716 2716 IC 27C12B 27C512V 2716 EPROM 24 PINS 2716 EPROM 2716 memory 2716
    Text: intei 2716 16K 2K x 8 UV ERASABLE PROM • Fast Access Time — 2716-1: 350 ns Max — 2716-2: 390 ns Max — 2716: 450 ns Max ■ Pin Compatible to Intel “Universal Site” EPROMs _ Simple Programming Requirements — Single Location Programming — Programs with One 50 ms Pulse


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    PDF 384-bit ic 2716 eprom ic 2716 pin diagram of ic 2716 2716 IC 27C12B 27C512V 2716 EPROM 24 PINS 2716 EPROM 2716 memory 2716

    eprom 2716

    Abstract: 2716 eprom ic 2716 intel 2716 eprom 2764ai 2716 2k eprom 2716 2716 IC 2716 EPROM 24 PINS memory 2716
    Text: intei 2716 16K 2K x 8 UV ERASABLE PROM Fast Access Time - 2 7 1 6 -1 : 350 ns Max - 2 7 1 6 -2 : 390 ns Max — 2716: 450 ns Max Pin Compatible to Intel “Universal Site” EPROMs Simple Programming Requirements — Single Location Programming — Programs with One 50 ms Pulse


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    PDF 384-bit eprom 2716 2716 eprom ic 2716 intel 2716 eprom 2764ai 2716 2k eprom 2716 2716 IC 2716 EPROM 24 PINS memory 2716

    eprom 2716

    Abstract: 2716 eprom intel 2716 intel 2716 eprom 2716 2k eprom 2764AI 2716 memory 2716 2716 IC 2716 EPROM 24 PINS
    Text: intei 2716 16K 2K x 8 UV ERASABLE PROM Fast Access Time -2 7 1 6 -1 : 350 ns Max -2 7 1 6 -2 : 390 ns Max — 2716: 450 ns Max Pin Compatible to Intel “Universal Site” EPROMs Simple Programming Requirements — Single Location Programming — Programs with One 50 ms Pulse


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    PDF 384-bit eprom 2716 2716 eprom intel 2716 intel 2716 eprom 2716 2k eprom 2764AI 2716 memory 2716 2716 IC 2716 EPROM 24 PINS

    intel 2732 eprom

    Abstract: 2716 EPROM 24 PINS 2716 eprom eprom 2716 intel 2716 memory 2716 intel 2716 eprom rom 2716 2716 2716 2k eprom
    Text: in te i 2716* 16K 2K x 8 UV ERASABLE PROM • Fast Access Time — 350 ns Max. 2716-1 — 390 ns Max. 2716-2 — 450 ns Max. 2716 — 490 ns Max. 2716-5 — 650 ns Max. 2716-6 ■ Pin Compatible to Intel 2732 EPROM ■ Single + 5V Power Supply ■ Inputs and Outputs TTL Compatible


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    PDF 384-bit 2716s. 2716s intel 2732 eprom 2716 EPROM 24 PINS 2716 eprom eprom 2716 intel 2716 memory 2716 intel 2716 eprom rom 2716 2716 2716 2k eprom

    68A316E

    Abstract: MCM2716
    Text: M O TO R O LA 2048 x 8-BIT UV ERASABLE PROM MOS N -C H A N N E L, SILIC O N -G A TE T he M C M 2716 is a 16,384-bit Erasable and Electrically R eprogram ­ m able PR OM designed fo r system deb ug usage and s im ilar a p p lica tions requiring non vo la tile m em o ry th a t co u ld be reprogram m ed periodically.


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    PDF 384-bit 68A316E MCM2716

    op closed-loop 80MHZ

    Abstract: VA2716J VA2716S 2C3180
    Text: VA2716 LSP FAMILY DATA SHEETS DUAL H IG H -S P EE D , FA ST-SETTLIN G O PERATIO NAL AM PLIFIER FEATURES • Complete Dual Version of VA706 Fast-Settling Op Amp • Dual Includes Balance for Both Amplifiers • Fast Settling Time: ±0.1% in 200ns • High Slew Rate: 42V/ns


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    PDF VA2716 VA706 200ns 25MHz VA2716 theVA706 10MHz 100MHz op closed-loop 80MHZ VA2716J VA2716S 2C3180

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


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    microprocessor Rockwell R6500

    Abstract: No abstract text available
    Text: R6500/1E R6500/1E Microprocessor Emulator Device * » Rockwell INTRODUCTION document. The R650Q/1 Product Description Order No. 212 con­ tains a description of R6500/1 functions and interface signals. The R6500/1E device provides all the features of the R6500/1


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    PDF R6500/1E R650Q/1 R6500/1 R6500/1E R6500/1 16-bit 64-pin microprocessor Rockwell R6500

    MOSTEK ROM

    Abstract: MOSTEK MEMORY MK2716 MK2716-12 MK34000 MK3880
    Text: MQSTEK ff? 2048 x 8-BIT EPROM Electrically Programmable/Ultraviolet Erasable ROM MK2716 J -12 FEATURES □ Three State O utput OR-tie capability □ 16,384 Bit U ltraviolet Erasable E lectrically Program ­ mable ROM organized as 2,048 w ords by 8 bits □ Five modes of operation fo r greater system fle xib ility


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    PDF MK2716 MK2716-12 650ns 525mW 132mW MK2716. MOSTEK ROM MOSTEK MEMORY MK34000 MK3880

    2816 eeprom

    Abstract: intel 2816 eeprom CI EEPROM 2816 eeprom 2816 intel 2816 2kx8 2716 te2025 INTEL D 2816 B 2716 D EEPROM intel eprom 2716
    Text: INST R U M I.M ER5916 ER5916IR ER5916HR PRELIMINARY INFORMATION Word Alterable 16K Bit Electrically Erasable and Programmable ROM FEA TU RES No high voltages — +5V only operation in ail modes E lectrically Word or B lock Erasable 2048 w ord x 8 bit organization, fu lly decoded


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    PDF ER5916 ER5916IR ER5916HR 300ns ER5916 ERS91I6HR A0-A10 2816 eeprom intel 2816 eeprom CI EEPROM 2816 eeprom 2816 intel 2816 2kx8 2716 te2025 INTEL D 2816 B 2716 D EEPROM intel eprom 2716

    Untitled

    Abstract: No abstract text available
    Text: ACS14MS Semiconductor Data Sheet Radiation Hardened Hex Inverting Schmitt Trigger The Radiation Hardened ACS14MS is a Hex Inverting Schmitt Trigger. This device simply inverts the level present on each input. The Schmitt Trigger input stage provides 400mV Min of hysteresis and permits input signals with


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    PDF ACS14MS ACS14MS 400mV 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: ACS11MS S em iconductor Data Sheet Radiation Hardened Triple 3-Input AND Gate The Radiation Hardened ACS11MS is a Triple 3-Input AND Gate. When all three inputs to one of the gates are at a HIGH level, the corresponding Y output will be HIGH. A LOW level on any input will cause the output for that gate to be


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    PDF ACS11MS ACS11MS 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: ACS04MS Semiconductor November 1998 Data Sheet File Number Radiation Hardened Hex Inverter Features The Radiation Hardened ACS04MS is a Hex Inverter. This device simply inverts the level present on each input. All inputs are buffered and the outputs are designed for


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    PDF ACS04MS ACS04MS MIL-PRF-38535 1-800-4-HARRIS