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    2731G Price and Stock

    Monolithic Power Systems MP2731GQC-0000-P

    4.5A, SINGLE-CELL FAST CHARGER W
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    DigiKey MP2731GQC-0000-P Digi-Reel 213 1
    • 1 $4.18
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    MP2731GQC-0000-P Cut Tape 213 1
    • 1 $4.18
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    Avnet Americas MP2731GQC-0000-P Reel 28 Weeks 500
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    Newark MP2731GQC-0000-P Cut Tape 1
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    Avnet Silica MP2731GQC-0000-P 30 Weeks 500
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    Microchip Technology Inc 2731GN-120V

    RF MOSFET HEMT 50V 55-QP
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    Monolithic Power Systems MP2731GQC-0000-Z

    4.5A, SINGLE-CELL FAST CHARGER W
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    MP2731GQC-0000-Z Cut Tape 1
    • 1 $3.79
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    MP2731GQC-0000-Z Digi-Reel 1
    • 1 $3.79
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    Avnet Americas MP2731GQC-0000-Z Reel 24 Weeks 5,000
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    Newark MP2731GQC-0000-Z Reel 5,000
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    Monolithic Power Systems MP2731GQC-0001-P

    4.5A I2C CONTROLLED SW CHARGER W
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    DigiKey MP2731GQC-0001-P Reel 500
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    Mouser Electronics MP2731GQC-0001-P
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    Monolithic Power Systems MP2731GQC-0001-Z

    4.5A I2C CONTROLLED SW CHARGER W
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    DigiKey MP2731GQC-0001-Z Bulk 1
    • 1 $3.75
    • 10 $2.465
    • 100 $1.7522
    • 1000 $1.36411
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    Avnet Americas MP2731GQC-0001-Z Reel 24 Weeks 5,000
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    2731G Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    27 - 31 GHz HPA Infineon Technologies Two-Stage Monolithic Microwave Integrated Circuit (MMIC) HEMT Amplifier Original PDF
    2731GN-110M Microsemi RF FETs, Discrete Semiconductor Products, FETS RF GAN 150V 2.7-3.1GHZ 55QP Original PDF
    2731GN-200M Microsemi RF FETs, Discrete Semiconductor Products, FETS RF GAN 150V 2.7-3.1GHZ 55QP Original PDF

    2731G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2731GN-200M

    Abstract: 2731GN power transistor gan s-band J6 transistor Gan transistor j374
    Text: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF


    Original     		PDF 2731GN-200M 2731GN 55-QP 2731GN power transistor gan s-band J6 transistor Gan transistor j374

    2731GN

    Abstract: No abstract text available
    Text: 2731GN-110M Rev 1 2731GN – 110M 110 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-110M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 110 Watts of pulsed RF


    Original     		PDF 2731GN-110M 2731GN 55-QP 2731GN

    2731GN

    Abstract: No abstract text available
    Text: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF


    Original     		PDF 2731GN-200M 2731GN 55-QP 55-QP 2731GN

    Untitled

    Abstract: No abstract text available
    Text: TGA2594 27-31GHz 5W GaN Power Amplifier Applications • Satellite Communications Product Features          Functional Block Diagram Frequency Range: 27 – 31GHz Psat: 37dBm typical across frequency PAE: 28% Small Signal Gain: 23dB


    Original     		PDF TGA2594 27-31GHz 31GHz 37dBm 25dBm/tone: -36dBc -45dBc 140mA, TGA2594

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


    Original     		PDF MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30

    UPA102G

    Abstract: 8108T PC2768G 2757T PC2766 UPC2798GR
    Text: Configuration Drawings Frequency Downconverters U P C 2731G S ose UPC1685G U PC1686G U PC1687G U PC 2721G R U PC2722G R Coupling ose (Feedback) ose (Bypass) (Bypass) U PC2734G R U PC2753G R U P C 2743G S /44G S E E E _n= E E r E E E E E U PC2768G R U P C 2756T


    OCR Scan     		PDF UPC2731GS UPC1685G UPC1686G UPC1687G UPC2721GR UPC2722GR PC2734G 2743G PC2753G PC2768G UPA102G 8108T 2757T PC2766 UPC2798GR

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT //2731GS L-BNAD SILICON DOWNCONVERTER IC WITH AGC AMPLIFIER FOR DBS TUNER AND MOBILE COMMUNICATIONS DESCRIPTION f i 2731GS is a silicon monolithic integrated circuit designed for DBS tuner and mobile communications. This IC


    OCR Scan     		PDF uPC2731GS PC2731GS

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT //2731GS L-BNAD SILICON DOWNCONVERTER IC WITH AGC AMPLIFIER FOR DBS TUNER AND MOBILE COMMUNICATIONS DESCRIPTION /¿2731GS is a silicon monolithic integrated circuit designed for DBS tuner and mobile comm unications. This IC


    OCR Scan     		PDF uPC2731GS PC2731GS PC27xx VP15-00-1 WS60-00-1 C10535E)

    mmds down converter

    Abstract: uPC2731
    Text: SILICON MMIC L-BAND DOWN CONVERTER WITH AGC 2731GS FUNCTIONAL BLOCK DIAGRAM FEATURES L-BAND OPERATION: 900 MHz to 2.0 GHz ^ ip—Op—0 — ON BOARD OSCILLATOR AGC AMPLIFIER 20 PIN SOP PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC2731 is a Silicon MMIC manufactured using the


    OCR Scan     		PDF UPC2731GS UPC2731 UPC2731GS C2731GS UPC2731GS-E1 2500/Reel mmds down converter