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    274000 Search Results

    274000 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7MPV6274-000 Renesas Electronics Corporation SRAM MODULE Visit Renesas Electronics Corporation
    5962-92274-000 Renesas Electronics Corporation 54FCT162374T Visit Renesas Electronics Corporation
    10127400-01H2410LF Amphenol Communications Solutions PwrBlade® ULTRA, Power Connectors, R/A Receptacle Assembly 4LP+15S+4HP PF Visit Amphenol Communications Solutions
    10127400-00H3410LF Amphenol Communications Solutions PwrBlade® ULTRA Connector System, Power Connectors, Receptacle, 5HVP+12S+8HP Right Angle, Press Fit Visit Amphenol Communications Solutions
    10127400-02H1000LF Amphenol Communications Solutions PwrBlade® ULTRA Connector System, Power Connectors, Receptacle, 14HP Right Angle, Press Fit Visit Amphenol Communications Solutions
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    274000 Price and Stock

    Molex 0192740005

    CONN QC RCPT 14-16AWG 0.250
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    DigiKey 0192740005 Bag 21,858 1
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    TE Connectivity 2274000-1

    CONN ZSFP+ CAGE PRESS-FIT R/A
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    DigiKey 2274000-1 Tray 2,680 1
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    CW Industries CWR-227-40-0000

    CONN RCPT 40POS IDC GOLD
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    Molex 2132740002

    4VT BBC ASSY_OPEN WALL
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    DigiKey 2132740002 Tray 360 1
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    274000 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Alc201A

    Abstract: HY-05 HYCOM diode DB3 C531 ALC201 SmD TRANSISTOR a75 smd diode c539 P62-1D3-1AX9 smd diode c644 RJ45 speedtech EPSON C691 MAIN
    Text: Intel 852GME Interactive Client Reference Design User’s Guide October 2003 Order Number: 274000-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL ® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN


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    852GME Alc201A HY-05 HYCOM diode DB3 C531 ALC201 SmD TRANSISTOR a75 smd diode c539 P62-1D3-1AX9 smd diode c644 RJ45 speedtech EPSON C691 MAIN PDF

    A039h

    Abstract: 3A400
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


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    16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400 PDF

    JS28F512M29

    Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 PC28F00AM29EWHA 11-Apr-2011 JS28F512M29 js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL PDF

    Spansion S29GL512N11

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


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    S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte S29GLxxxN 27631sb2 Spansion S29GL512N11 PDF

    SGA23

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.3E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


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    16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball SGA23 PDF

    STR 6656

    Abstract: SUN HOLD relay MD-5 str 2105 F6524 LB1405 BCD 2421 LB1403 jw300 DFRD JW-22DA
    Text: Version 1.0 Produced in Dec. 2003 R SSSharp Programmable Controller New Satellite JW300 Programiming Manual - Ladder Instruction Version We thank you for your purchase of the SHARP programmable controller JW300. This manual Programming Manual - Ladder Instruction Version mainly describes software


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    JW300 JW300. JW300 F-403 STR 6656 SUN HOLD relay MD-5 str 2105 F6524 LB1405 BCD 2421 LB1403 DFRD JW-22DA PDF

    130001 power transistor

    Abstract: fet D412 D400 npn transistor q406 transistor C495 transistor FBL-00 q902 transistor TRANSISTOR D412 1L400 TRANSISTOR D400
    Text: Pi Factors Report Page 1 of 63 SortBy: PartType/PN/RefDes Date: 4/5/2007 2:00 PM RelCalc for Windows, Version 5.0-BELL6 Release 2000.1 Company: Lambda Americas DOC: LZSA1000.CIR RECORDS: 321 DESCRIPTION: LZSA1000 ENV: GB TEMP: 40.00 C CF: 1.00000 MODEL: Serial


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    LZSA1000 LZSA1000 SFBT000054 -------------------------------SHKA171285 -------------------------------SHKA171286 130001 power transistor fet D412 D400 npn transistor q406 transistor C495 transistor FBL-00 q902 transistor TRANSISTOR D412 1L400 TRANSISTOR D400 PDF

    Untitled

    Abstract: No abstract text available
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,


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    S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N S29GL128P, S29GL256P, S29GL512P S29GL128N, PDF

    a22t

    Abstract: S19G S29GL-N
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications


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    S29GL-N S29GL512N, S29GL256N, S29GL128N a22t S19G PDF

    S29GL-N

    Abstract: 1E300
    Text: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this


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    S29GL512/256/128N S29GL512N, S29GL256N, S29GL128N S29GL-N 1E300 PDF

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


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    OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes PDF

    7be0

    Abstract: No abstract text available
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 48MB/s) Kbytes/64 7be0 PDF

    S70GL01GN00

    Abstract: S29GL01GP S29GL512N
    Text: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: The S70GL01GN has been retired and is not recommended for designs. For new and current designs, S29GL01GP


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    S70GL01GN00 S70GL01GN S29GL01GP S29GL01GP S29GL512N PDF

    MSM9810 EVA BOARD

    Abstract: C1157 112120 CON50 HC139 MSM271000 MSM9810 RA12 RA13 RA16
    Text: E2D0105-19-22 Pr el im This version: Feb. 1999 MSM9810 EVA BOARD ina ¡ Semiconductor MSM9810 EVA BOARD ¡ Semiconductor ry MSM9810 Evaluation Board GENERAL DESCRIPTION The MSM9810 Evaluation Board enables you to readily evaluate your sound data quality and


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    E2D0105-19-22 MSM9810 20pin 50-pin MSM9810 EVA BOARD C1157 112120 CON50 HC139 MSM271000 RA12 RA13 RA16 PDF

    2B60000

    Abstract: S70GL01GN00 S29GL512N gl512 2200-0002
    Text: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this document contains information on one or more products under development


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    S70GL01GN00 2B60000 S29GL512N gl512 2200-0002 PDF

    M29EWL

    Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 144KB 256Mb M29EWL JS28F00AM29EWH 28F256M29EW JS28F00AM29EW PDF

    JS28F00am29

    Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 JS28F00am29 JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256 PDF

    MBM29XL12DF

    Abstract: No abstract text available
    Text: MBM29XL12DF-70/80 Data Sheet Retired Product MBM29XL12DF -70/80 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications


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    MBM29XL12DF-70/80 MBM29XL12DF DS05-20901-2E F0307 ProductDS05-20901-2E MBM29XL12DF PDF

    S29GL512N datasheet

    Abstract: GL128n s29gl256p S29GL256p spansion S29GL512P Spansion obsolescence S29GL S29GL128N S29GL128P S29GL256N S29GL512N
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet For new designs, S29GL512P, S29GL256P, and S29GL128P supersedes S29GL512N, S29GL256N, and


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    S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N S29GL512P, S29GL256P, S29GL128P S29GL512N datasheet GL128n s29gl256p S29GL256p spansion S29GL512P Spansion obsolescence S29GL S29GL128N S29GL256N S29GL512N PDF

    1A4000

    Abstract: No abstract text available
    Text: Am29PDL128G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    Am29PDL128G Am29PDL127H 1A4000 PDF

    gl256N

    Abstract: S29GL512N datasheet S29GL-N S19GL128N 31df* 33H s29gl512 FBGA 8 x 14 package tray S29GL date code marking S29GL128N S29GL256N
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications


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    S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N gl256N S29GL512N datasheet S19GL128N 31df* 33H s29gl512 FBGA 8 x 14 package tray S29GL date code marking S29GL128N S29GL256N PDF

    Untitled

    Abstract: No abstract text available
    Text: .8 2 2 TERM. NO.’ s FOR REF. ONLY ALTERNATE TERM. NO.’s IN .1 7 2 MAX. [4 .3 7 ] LOT CODE & DATE CODE (4 )0 REF. [20 .88 ] 3=1(3) IZ Z t .6 4 2 MAX. [1 6 .3 1 ] uzzi " A .3 3 5 MAX. [8 .5 1 ] (6 (6M ) IZ Z f )0 DOT LOCATES TERM. # 3 ( 1 ) 1— I .0 1 2 x .0 2 4 (4 )


    OCR Scan
    671-8481R PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan
    PDF

    DIN 45921

    Abstract: s10F33 s00f S25F6
    Text: OHMITE S Seríes M anufacturing C om pany Surface Mount Thick Film Chip Resistors 1% Tolerance Features • Derating curve * Vi o, 1/8, 1/4, 1/3, 1/2 and 1 w att sizes 100 * Available in 100 and 1000 piece packs or on tape and reel. C abinet Assortm ents Available


    OCR Scan
    100ppm esistanc50F681K S50F825K S50F1 S00F10R0 S00F12R1 S00F15R0 S00F18R2 S00F22R1 S00F27R4 DIN 45921 s10F33 s00f S25F6 PDF