Diode HER 507
Abstract: No abstract text available
Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V
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Si4412DY
2002/95/EC
Si4412DY-T1-E3
Si4412DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Diode HER 507
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Si9407BDY-T1-GE3
Abstract: Si9407BDY Si9407BDY-T1-E3
Text: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 60 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si9407BDY
2002/95/EC
Si9407BDY-T1-E3
Si9407BDY-T1-GE3
11-Mar-11
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PDF
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Si4410BDY
Abstract: Si4410BDY-T1-E3 Si4410BDY-T1-GE3
Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0135 at VGS = 10 V 10 0.020 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si4410BDY
2002/95/EC
Si4410BDY-T1-E3
Si4410BDY-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4423DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0075 at VGS = - 4.5 V - 14 0.009 at VGS = - 2.5 V - 13 0.0115 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si4423DY
2002/95/EC
Si4423DY-T1-E3
Si4423DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4942DY Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.021 at VGS = 10 V 7.4 0.028 at VGS = 4.5 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Original
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Si4942DY
2002/95/EC
Si4942DY-T1-E3
Si4942DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.1 0.030 at VGS = 2.5 V 7.5 0.060 at VGS = - 4.5 V - 5.3 0.100 at VGS = - 2.5 V
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Si4500BDY
2002/95/EC
Si4500BDY-T1-E3
Si4500BDY-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si4943CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0192 at VGS = - 10 V -8 0.0330 at VGS = - 4.5 V -8 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si4943CDY
2002/95/EC
Si4943CDY-T1-E3
Si4943CDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si9926CDY Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.018 at VGS = 4.5 V 8 0.022 at VGS = 2.5 V 8 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si9926CDY
2002/95/EC
Si9926CDY-T1-E3
Si9926CDY-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 - 12 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si4451DY
2002/95/EC
Si4451DY-T1-E3
Si4451DY-T1-GE3
11-Mar-11
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PDF
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Marking Code AC
Abstract: No abstract text available
Text: Si3446ADV Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES RDS(on) (Ω) ID (A)a 0.037 at VGS = 4.5 V 6 0.065 at VGS = 2.5V 6 Qg (Typ.) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Si3446ADV
2002/95/EC
Si3446ADV-T1-E3
Si3446ADV-T1-GE3
18-Jul-08
Marking Code AC
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PDF
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Si9936BDY
Abstract: Si9936BDY-T1-E3
Text: Si9936BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.035 at VGS = 10 V 6.0 0.052 at VGS = 4.5 V 4.9 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC
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Si9936BDY
2002/95/EC
Si9936BDY-T1-E3
Si9936BDY-T1-GE3
18-Jul-08
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PDF
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Si4464DY
Abstract: Si4464DY-T1-E3 Si4464DY-T1-GE3 720-51 72051
Text: Si4464DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 ID (A) 0.240 at VGS = 10 V 2.2 0.260 at VGS = 6.0 V 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized for Low Qg and Low Rg
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Si4464DY
2002/95/EC
Si4464DY-T1-E3
Si4464DY-T1-GE3
18-Jul-08
720-51
72051
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PDF
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Si4412DY
Abstract: No abstract text available
Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V
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Original
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Si4412DY
2002/95/EC
Si4412DY-T1-E3
Si4412DY-T1-GE3
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4963BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 6.5 0.050 at VGS = - 2.5 V - 5.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC
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Original
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Si4963BDY
2002/95/EC
Si4963BDY-T1-E3
Si4963BDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) 0.020 at VGS = 4.5 V 9.1 0.030 at VGS = 2.5 V 7.5 0.060 at VGS = - 4.5 V - 5.3 0.100 at VGS = - 2.5 V
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Original
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Si4500BDY
2002/95/EC
Si4500BDY-T1-E3
Si4500BDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si4943CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0192 at VGS = - 10 V -8 0.0330 at VGS = - 4.5 V -8 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si4943CDY
2002/95/EC
Si4943CDY-T1-E3
Si4943CDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SUP90N06-6m0P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 60 0.006 at VGS = 10 V 90d 78.5 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC
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SUP90N06-6m0P
2002/95/EC
O-220AB
SUP90N06-6m0P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4488DY Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 5.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC
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Original
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Si4488DY
2002/95/EC
Si4488DY-T1-E3
Si4488DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 6.0 0.053 at VGS = - 2.5 V - 5.2 0.072 at VGS = - 1.8 V - 4.5 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si3447BDV
2002/95/EC
Si3447BDV-T1-E3
Si3447BDV-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4490DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 4.0 0.090 at VGS = 6.0 V 3.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC
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Original
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Si4490DY
2002/95/EC
Si4490DY-T1-E3
Si4490DY-T1-GE3
20electronic
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4480DY Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.035 at VGS = 10 V 6.0 0.040 at VGS = 6.0 V 5.5 • Halogen-free According to IEC 61249-2-21 Definiton • Compliant to RoHS Directive 2002/95/EC
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Original
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Si4480DY
2002/95/EC
Si4480DY-T1-E3
Si4480DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4490DY Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.080 at VGS = 10 V 4.0 0.090 at VGS = 6.0 V 3.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC
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Original
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Si4490DY
2002/95/EC
Si4490DY-T1-E3
Si4490DY-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4931DY Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.018 at VGS = - 4.5 V - 8.9 0.022 at VGS = - 2.5 V - 8.1 0.028 at VGS = - 1.8 V - 3.6 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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Si4931DY
2002/95/EC
Si4931DY-T1-E3
Si4931DY-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. R E V ISIO N S DW A2 27APR09 REVISED E C R —0 9 —0 1 0 4 7 4 SC WK LOGO & DATE CODE 16.20 14.0 MAX 1.00 □ 0.35 8 PLC 01.60 PLC 1.60 2 PLC
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OCR Scan
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27APR09
27/im
508/im
31MAR2000
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PDF
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