At90scr
Abstract: Inside Secure iso7816 PPS cwi 1011
Text: TPR0414C Technical Datasheet Preliminary AT90SCR050 2 TPR0414C – VIC – 27Jan11 AT90SCR050 Table of Contents General 1 Block Diagram .9
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TPR0414C
AT90SCR050
27Jan11
8/16-bit
At90scr
Inside Secure
iso7816 PPS
cwi 1011
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Untitled
Abstract: No abstract text available
Text: DCMKP 3.75/1.25 mF/T Vishay ESTA ESTAdry DC Capacitor NOMINAL RATINGS TECHNOLOGY Capacitance/tolerance CN 1250 F Rated DC voltage UNDC 3750 V 0 %/+ 10 % Dielectric Polypropylene; metallized selfhealing Filling material N2; resin; dry OVER VOLTAGES ACCORDING TO STANDARD
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D-321
27-Jan-11
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Untitled
Abstract: No abstract text available
Text: Outline Dimensions Vishay Semiconductors EMIPAK2 DIMENSIONS in millimeters 15.2 12.7 8.9 Front view 55 ± 0.3 Pins position with tolerance Ø 1 ± 0.1 M4 Ø 0.4 5.1 14 11.4 10.2 7.6 7.6 6.4 3.8 2.6 1.3 13.3 3.2 1.9 1.3 5.1 2.5 6.3 Detail “A” Scale 10:1
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27-Jan-11
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dec M4 diode
Abstract: VS-EMG050J60N
Text: VS-EMG050J60N www.vishay.com Vishay Semiconductors Dual Mode PFC, 60 A FEATURES • • • • • • • • • EMIPAK2 NPT Warp2 PFC IGBT with low VCE ON Silicon carbide PFC diode Antiparallel FRED Pt fast recovery Integrated thermistor Square RBSOA
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VS-EMG050J60N
2002/95/EC
VS-EMG050J60N
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
dec M4 diode
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Untitled
Abstract: No abstract text available
Text: DCMKP 4.0/625 F Vishay ESTA ESTAdry DC-Capacitor NOMINAL RATINGS TECHNOLOGY Capacitance/tolerance CN 625 μF Rated DC voltage UNDC 4000 V ±5 % Dielectric Polypropylene; metallized selfhealing Filling material N2; resin; dry OVER VOLTAGES ACCORDING TO STANDARD
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D-283
27-Jan-11
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Untitled
Abstract: No abstract text available
Text: DCMKP 4.25/2.57 mF/4 Vishay ESTA ESTAdry DC-Capacitor NOMINAL RATINGS TECHNOLOGY Capacitance/tolerance CN 2567 F Rated DC voltage UNDC 4250 V - 2 %/+ 5 % Dielectric Polypropylene; metallized selfhealing Filling material N2; resin; dry OVER VOLTAGES ACCORDING TO STANDARD
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D-197
27-Jan-11
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VISHAY DiodE 400
Abstract: VS-EMG050J60N
Text: VS-EMG050J60N www.vishay.com Vishay Semiconductors Dual Mode PFC, 60 A FEATURES • • • • • • • • • • EMIPAK2 PRODUCT SUMMARY NPT Warp2 PFC IGBT with low VCE ON Silicon carbide PFC diode Antiparallel FRED Pt fast recovery Integrated thermistor
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VS-EMG050J60N
E78996
VS-EMG050J60N
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VISHAY DiodE 400
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Untitled
Abstract: No abstract text available
Text: DCMKP 3.63/1.5 mF/2 Vishay ESTA ESTAdry DC-Capacitor NOMINAL RATINGS TECHNOLOGY Capacitance/tolerance CN 1500 F Rated DC voltage UNDC 3630 V ±3 % Dielectric Polypropylene; metallized selfhealing Filling material N2; resin; dry OVER VOLTAGES ACCORDING TO STANDARD
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D-283
27-Jan-11
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VS-EMF050J60U
Abstract: No abstract text available
Text: VS-EMF050J60U www.vishay.com Vishay Semiconductors 3-Levels Half Bridge Inverter Stage, 60 A, 57 A FEATURES • Warp1 and Warp2 PFC IGBT • FRED Pt and HEXFRED® antiparallel diodes • FRED Pt® clamping diodes • Integrated thermistor • Square RBSOA
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VS-EMF050J60U
E78996
VS-EMF050J60U
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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2 anode igbt inverter circuit diagram
Abstract: VS-EMF050J60U
Text: VS-EMF050J60U www.vishay.com Vishay Semiconductors 3-Levels Half-Bridge Inverter Stage, 60 A/57 A FEATURES • Warp1 and Warp2 PFC IGBT • FRED Pt and HEXFRED® antiparallel diodes • FRED Pt® clamping diodes • Integrated thermistor • Square RBSOA
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VS-EMF050J60U
2002/95/EC
VS-EMF050J60U
11-Mar-11
2 anode igbt inverter circuit diagram
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HALF-bridge inverter
Abstract: INDICATOR EM c467 VS-EMF050J60U
Text: VS-EMF050J60U Vishay Semiconductors 3-Levels Half-Bridge Inverter Stage, 60 A/57 A FEATURES • Warp1 and Warp2 PFC IGBT • FRED Pt and HEXFRED® antiparallel diodes • FRED Pt® clamping diodes • Integrated thermistor • Square RBSOA EMIPAK2 • Operating frequency 60 kHz to 150 kHz
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VS-EMF050J60U
2002/95/EC
VS-EMF050J60U
11-Mar-11
HALF-bridge inverter
INDICATOR EM
c467
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LT 4320
Abstract: No abstract text available
Text: DCMKP 3.6/710 F Vishay ESTA ESTAdry DC-Capacitor NOMINAL RATINGS TECHNOLOGY Capacitance/tolerance CN 710 μF Rated DC voltage UNDC 3600 V 0 %/+ 5 % Dielectric Polypropylene; metallized selfhealing Filling material N2; resin; dry OVER VOLTAGES ACCORDING TO STANDARD
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D-283
5192-31856-xx
27-Jan-11
LT 4320
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VS-EMG050J60N
Abstract: No abstract text available
Text: VS-EMG050J60N www.vishay.com Vishay Semiconductors Dual Mode PFC, 60 A FEATURES • • • • • • • • • EMIPAK2 PRODUCT SUMMARY VCES 600 V VCE ON typical at IC = 50 A 1.8 V IC at TC = 98 °C 50 A Speed 30 kHz to 150 kHz NPT Warp2 PFC IGBT with low VCE(ON)
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VS-EMG050J60N
E78996
VS-EMG050J60N
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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VS-EMF050J60U
Abstract: No abstract text available
Text: VS-EMF050J60U www.vishay.com Vishay Semiconductors 3-Levels Half Bridge Inverter Stage, 60 A, 57 A FEATURES • Warp1 and Warp2 PFC IGBT • FRED Pt and HEXFRED® antiparallel diodes • FRED Pt® clamping diodes • Integrated thermistor • Square RBSOA
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Original
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PDF
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VS-EMF050J60U
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VS-EMF050J60U
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VS-EMG050J60N
Abstract: No abstract text available
Text: VS-EMG050J60N Vishay Semiconductors Dual Mode PFC, 60 A FEATURES • • • • • • • • • EMIPAK2 NPT Warp2 PFC IGBT with low VCE ON Silicon carbide PFC diode Antiparallel FRED Pt fast recovery Integrated thermistor Square RBSOA Operating frequency 60 kHz to 150 kHz
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VS-EMG050J60N
2002/95/EC
VS-EMG050J60N
11-Mar-11
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VS-EMG050J60N
Abstract: No abstract text available
Text: VS-EMG050J60N www.vishay.com Vishay Semiconductors Dual Mode PFC, 60 A FEATURES • • • • • • • • • EMIPAK2 NPT Warp2 PFC IGBT with low VCE ON Silicon carbide PFC diode Antiparallel FRED Pt fast recovery Integrated thermistor Square RBSOA
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VS-EMG050J60N
2002/95/EC
VS-EMG050J60N
11-Mar-11
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