500x3
Abstract: MR500
Text: 107-68690 Packaging Specification 27Jul07 Rev E EMBOSS ASSY 0.4MM PITCH FPC CONN. 80P BACK FLIP LOCK TYPE 1. PURPOSE 目的 Define the packaging specifiction and packaging method of EMBOSS ASSY 0.4MM PITCH FPC CONN. 80P BACK FLIP LOCK TYPE. 订定 EMBOSS ASSY 0.4MM PITCH FPC CONN. 80P BACK FLIP LOCK TYPE 产品之包装规格及包装方式。
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27Jul07
MR/500
5MR/500
QR-ME-030B
500x3
MR500
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XU1009-BD
Abstract: RF Transistor Selection 26TX0555 26TX
Text: 18.0-36.0 GHz GaAs MMIC Transmitter July 2007 - Rev 27-Jul-07 Features Sub-harmonic Transmitter Integrated Mixer, LO Doubler/Buffer & Output Amplifier +25.0 dBm Output Third Order Intercept OIP3 35.0 dB Gain Control 2.0 dBm LO Drive Level 9.0 dB Conversion Gain
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27-Jul-07
MIL-STD-883
XU1009-BD
XU1009-BD-000V
XU1009-BD-EV1
XU1009
XU1009-BD
RF Transistor Selection
26TX0555
26TX
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ups lm339
Abstract: MPT3055E CAT525WI-T1 md2001
Text: Not Recommended for New Design CAT525 Quad Digitally Programmable Potentiometer DPP with 256 Taps and Microwire Interface FEATURES DESCRIPTION Four 8-bit DPPs configured as programmable voltage sources in DAC-like applications Independent reference inputs
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CAT525
CAT525
MD-2001
ups lm339
MPT3055E
CAT525WI-T1
md2001
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SA2M
Abstract: SA2J-E3/61T JESD22-B102D J-STD-002B
Text: New Product SA2B thru SA2M Vishay General Semiconductor Surface Mount Glass-Passivated Recitifiers FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability
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J-STD-020C,
2002/95/EC
2002/96/EC
DO-214AC
08-Apr-05
SA2M
SA2J-E3/61T
JESD22-B102D
J-STD-002B
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1N6478
Abstract: 1N6484 DO-213AB JESD22-B102D J-STD-002B
Text: 1N6478 thru 1N6484 Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop
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1N6478
1N6484
MIL-S-19500
J-STD-020C,
2002/95/EC
2002/96/EC
DO-213AB
08-Apr-05
1N6484
DO-213AB
JESD22-B102D
J-STD-002B
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DO214BA
Abstract: DO-214BA RGF1K JESD22-B102D J-STD-002B DO214BAGF1 RGF1M rgf1a
Text: RGF1A thru RGF1M Vishay General Semiconductor Surface Mount Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement
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MIL-S-19500
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
DO214BA
DO-214BA
RGF1K
JESD22-B102D
J-STD-002B
DO214BAGF1
RGF1M
rgf1a
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BYS459-1500
Abstract: BYS459B-1500 BYS459F-1500 JESD22-B102D J-STD-002B
Text: BYS459-1500, BYS459F-1500 & BYS459B-1500 Vishay General Semiconductor High Voltage Damper Diodes TO-220AC FEATURES ITO-220AC • Glass passivated chip junction • Fast reverse recovery time • Low switching loss, high efficiency • Low forward voltage drop
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BYS459-1500,
BYS459F-1500
BYS459B-1500
O-220AC
ITO-220AC
BYS459-1500
J-STD-020C,
O-263AB
BYS459-1500
BYS459B-1500
BYS459F-1500
JESD22-B102D
J-STD-002B
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JESD22-B102D
Abstract: J-STD-002B 89012
Text: New Product M30L40C Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation
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M30L40C
O-220AB
2002/95/EC
2002/96/EC
08-Apr-05
JESD22-B102D
J-STD-002B
89012
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2cjqh
Abstract: 20CJQ060PBF 5M MARKING CODE SCHOTTKY DIODE 40HFL40S02 EIA-541 IRFP460
Text: 20CJQ060PbF Vishay High Power Products Schottky Rectifier FEATURES • Small foot print, surface mountable Available Base common 4 • Low profile RoHS* • Very low forward voltage drop COMPLIANT • High frequency operation SOT-223 2 Common cathode Anode
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20CJQ060PbF
OT-223
20CJQ060PbF
12-Mar-07
2cjqh
5M MARKING CODE SCHOTTKY DIODE
40HFL40S02
EIA-541
IRFP460
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MBRF20H150CT
Abstract: JESD22-B102D J-STD-002B MBR20H150CT
Text: MBR20H150CT, MBRF20H150CT & SB20H150CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA FEATURES ITO-220AB TO-220AB • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop
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MBR20H150CT,
MBRF20H150CT
SB20H150CT-1
ITO-220AB
O-220AB
MBR20H150CT
2002/95/EC
O-262AA
2002/96/EC
MBRF20H150CT
JESD22-B102D
J-STD-002B
MBR20H150CT
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DTV32
Abstract: DTV32B DTV32F JESD22-B102D J-STD-002B
Text: New Product DTV32, DTV32F & DTV32B Vishay General Semiconductor High Voltage Damper Diodes TO-220AC FEATURES ITO-220AC • Glass passivated chip junction • High breakdown voltage capability • Very fast reverse recovery time • Fast forward recovery time
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DTV32,
DTV32F
DTV32B
O-220AC
ITO-220AC
DTV32
O-263AB
J-STD-020C,
O-263AB
DTV32
DTV32B
DTV32F
JESD22-B102D
J-STD-002B
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JESD22-B102D
Abstract: J-STD-002B MBR10H150CT MBRF10H150CT SB10H150CT-1
Text: MBR10H150CT, MBRF10H150CT & SB10H150CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA FEATURES ITO-220AB TO-220AB • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop
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MBR10H150CT,
MBRF10H150CT
SB10H150CT-1
ITO-220AB
O-220AB
MBR10H150CT
2002/95/EC
O-262AA
2002/96/EC
JESD22-B102D
J-STD-002B
MBR10H150CT
MBRF10H150CT
SB10H150CT-1
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DTV56
Abstract: DTV56B DTV56F JESD22-B102D J-STD-002B DTV56-E3
Text: DTV56, DTV56F & DTV56B Vishay General Semiconductor High Voltage Damper Diodes TO-220AC FEATURES ITO-220AC • Glass passivated chip junction • High breakdown voltage capability • Very fast reverse recovery time • Fast forward recovery time 2 2 1 1 DTV56
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DTV56,
DTV56F
DTV56B
O-220AC
ITO-220AC
DTV56
J-STD-020C,
O-263AB
O-263AB
DTV56
DTV56B
DTV56F
JESD22-B102D
J-STD-002B
DTV56-E3
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1N5231B
Abstract: CAT525
Text: Not Recommended for New Design CAT525 Quad Digitally Programmable Potentiometer DPP with 256 Taps and Microwire Interface FEATURES DESCRIPTION Four 8-bit DPPs configured as programmable voltage sources in DAC-like applications Independent reference inputs
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CAT525
CAT525
MD-2001
1N5231B
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MBRF20H200CT
Abstract: JESD22-B102D J-STD-002B MBR20H200CT SB20H200CT-1
Text: MBR20H200CT, MBRF20H200CT & SB20H200CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA TO-220AB FEATURES ITO-220AB • Guarding for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop
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MBR20H200CT,
MBRF20H200CT
SB20H200CT-1
O-220AB
ITO-220AB
MBR20H200CT
2002/95/EC
O-262AA
2002/96/EC
MBRF20H200CT
JESD22-B102D
J-STD-002B
MBR20H200CT
SB20H200CT-1
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1.4037
Abstract: AN609 Si7844DP 131135
Text: Si7844DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si7844DP
AN609
27-Jul-07
1.4037
131135
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MOSFET 4166
Abstract: 7447 7447 data sheet 69249 R 7447 details 4166 8449 DATA SHEET 7447 data sheet of 7447 datasheet 7447
Text: Si7846DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si7846DP
AN609
27-Jul-07
MOSFET 4166
7447
7447 data sheet
69249 R
7447 details
4166
8449
DATA SHEET 7447
data sheet of 7447
datasheet 7447
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74264
Abstract: 38.0038 AN609 Si7848DP
Text: Si7848DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si7848DP
AN609
27-Jul-07
74264
38.0038
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Untitled
Abstract: No abstract text available
Text: Not Recommended for New Design CAT525 Quad Digitally Programmable Potentiometer DPP with 256 Taps and Microwire Interface FEATURES DESCRIPTION ̈ Four 8-bit DPPs configured as programmable voltage sources in DAC-like applications ̈ Independent reference inputs
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CAT525
CAT525
MD-2001
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Untitled
Abstract: No abstract text available
Text: Not Recommended for New Design CAT525 Quad Digitally Programmable Potentiometer DPP with 256 Taps and Microwire Interface FEATURES DESCRIPTION Four 8-bit DPPs configured as programmable voltage sources in DAC-like applications Independent reference inputs
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CAT525
CAT525
MD-2001
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BYG24D
Abstract: BYG24J JESD22-B102D J-STD-002B 175KW BYG24G
Text: BYG24D thru BYG24J Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Fast reverse recovery time
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BYG24D
BYG24J
DO-214AC
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
BYG24J
JESD22-B102D
J-STD-002B
175KW
BYG24G
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BYG21M
Abstract: BYG21K JESD22-B102D J-STD-002B BYG21KH
Text: BYG21K & BYG21M Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time
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BYG21K
BYG21M
DO-214AC
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
BYG21M
BYG21K
JESD22-B102D
J-STD-002B
BYG21KH
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BYM10-1000
Abstract: BYM10-50 DO-213AB GL41A GL41Y BYM 260
Text: BYM10-50 thru BYM10-1000, GL41A thru GL41Y Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement
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BYM10-50
BYM10-1000,
GL41A
GL41Y
MIL-S-19500
J-STD-020C,
2002/95/EC
2002/96/EC
DO-213AB
08-Apr-05
BYM10-1000
DO-213AB
GL41Y
BYM 260
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . C O P Y R IG H T BY ^ C O RELEASED E L E C T R O N IC S FO R ALL C O R P O R A T IO N . P U B L IC A T IO N R IG H T S - 2 - R E V IS IO N S RESERVED. 50 LTR G3 D E S C R IP T IO N REV PER DATE 27JUL07
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27JUL07
31MAR2000
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