a6583
Abstract: CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0
Text: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers
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M30L0R8000T0
M30L0R8000B0
54MHz
a6583
CR10
J-STD-020B
M30L0R8000B0
M30L0R8000T0
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PDF
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t3383
Abstract: No abstract text available
Text: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers
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M30L0R8000T0
M30L0R8000B0
54MHz
t3383
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PDF
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M41T81
Abstract: AN1012 M41T81S bmb2 smd M41T813 ABE smd
Text: M41T81 Serial access real-time clock with alarm Not For New Design Features • For new designs use M41T81S ■ Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month, year, and century ■ 8 32 KHz crystal oscillator integrating load
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M41T81
M41T81S
M41T81S
M41T81
AN1012
bmb2 smd
M41T813
ABE smd
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PDF
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Untitled
Abstract: No abstract text available
Text: M41T81 Serial access real-time clock with alarm Datasheet - production data Description 8 1 SO8 8-pin SOIC Features • For all new designs use M41T81S Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month, year, and century
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M41T81
M41T81S
M41T81S
DocID007529
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2003 2 3 1 2003 LOC BY - REVISIONS DIST AI ALL RIGHTS RESERVED. 2 P LTR DESCRIPTION B2 B3 8.13 0.25 D 5 13.97 27.43 0.38 B APVD ECR-13-016227 11NOV2013 KKB R.P ECR-13-019618 17DEC2013 KKB
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ECR-13-016227
11NOV2013
ECR-13-019618
17DEC2013
16APR2004
26APR2004
27APR2004
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PDF
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MS 7529
Abstract: block diagram for RF transmitter AND RECEIVER doc AN1012 M41T81 M41T81S AN-1572 bmb2 smd
Text: M41T81 Serial access real-time clock with alarm Not recommended for new design Features • For all new designs other than automotive, use M41T81S contact the ST sales office for automotive grade ■ Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month,
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M41T81
M41T81S
M41T81S
MS 7529
block diagram for RF transmitter AND RECEIVER doc
AN1012
M41T81
AN-1572
bmb2 smd
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PDF
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VDR 0047
Abstract: J-STD-020B M68AW256M TFBGA48 TSOP44
Text: M68AW256M 4 Mbit 256K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 2.7 to 3.6V 256K x 16 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIME: 55ns, 70ns SINGLE BYTE READ/WRITE LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V
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M68AW256M
TSOP44,
TFBGA48
TSOP44
TFBGA48
VDR 0047
J-STD-020B
M68AW256M
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PDF
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CR10
Abstract: J-STD-020B M30L0R8000B0 M30L0R8000T0 JEDEC J-STD-020B
Text: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers
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M30L0R8000T0
M30L0R8000B0
54MHz
CR10
J-STD-020B
M30L0R8000B0
M30L0R8000T0
JEDEC J-STD-020B
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PDF
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Untitled
Abstract: No abstract text available
Text: M41T81 Serial access real-time clock with alarm Not recommended for new design Features • For all new designs other than automotive, use M41T81S contact the ST sales office for automotive grade ■ Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month,
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M41T81
M41T81S
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PDF
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UM0381
Abstract: programmer st10f272 RH3 439 ST10F272 OSC32 ST10F276 CAN bit timing st10 Bootstrap ACC20 ST10 half adder
Text: UM0381 User manual ST10F272 Introduction This manual describes the functionality of the ST10F272 devices. An architectural overview describes the CPU performance, the on-chip system resources, the on-chip clock generator, the on-chip peripheral blocks and the protected bits.
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UM0381
ST10F272
ST10F272
UM0381
programmer st10f272
RH3 439
OSC32
ST10F276 CAN bit timing
st10 Bootstrap
ACC20
ST10
half adder
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PDF
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P36-103-11R9
Abstract: CB605 r741 QSH-030-01-F-D-A on semiconductor r643 on semiconductor r639 smd diode OE R612 R645 RC28F128K3C115 A12B1
Text: U s er’s Ma nual, V 1.2, Ju ne 2004 TriBoard TC1130 H a r d w a r e M an u a l T C 1 1 3 0 - 3 0 0 M i c r o c o n t ro l le r s N e v e r s t o p t h i n k i n g . Edition 2004-06 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany
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TC1130
D-81541
TC1130
RS232
P36-103-11R9
CB605
r741
QSH-030-01-F-D-A
on semiconductor r643
on semiconductor r639
smd diode OE R612
R645
RC28F128K3C115
A12B1
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PDF
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M58BW032DT
Abstract: PQFP80 M58BW032BT M58BW032DB M58BW032BB
Text: M58BW032BT, M58BW032BB M58BW032DT, M58BW032DB 32 Mbit 1Mb x32, Boot Block, Burst 3.3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ SUPPLY VOLTAGE – VDD = 3.0V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 1.6V to 3.6V for I/O
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M58BW032BT,
M58BW032BB
M58BW032DT,
M58BW032DB
75MHz
PQFP80
128Kbit
512Kbit
M58BW032DT
PQFP80
M58BW032BT
M58BW032DB
M58BW032BB
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PDF
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Untitled
Abstract: No abstract text available
Text: TH I S DRAW ING I S U N P U B L I S H E D . CO P Y R I GHT2003 R E L E A S E D FOR P U B L I C A T I O N BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS LOC RESERVED. REV I S I ONS D I ST A D E S C R I P T I ON A B NEW D R A W NG GREATED ADDED DASHES: - 2 / - 3 / - 4
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OCR Scan
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GHT2003
18MAR2004
170CT2008
17-0ct-08
26APR2004
27APR2004
MAR2000
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PDF
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