Untitled
Abstract: No abstract text available
Text: YZB-4 DBV-6 www.ti.com PW-8 SN65220 SN65240 SN75240 P-8 SLLS266G − FEBRUARY 1997 − REVISED JULY AUGUST 2008 USB PORT TRANSIENT SUPPRESSORS FEATURES D Design to Protect Submicron 3-V or 5-V Circuits from Noise Transients D Port ESD Protection Capability Exceeds:
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SN65220
SN65240
SN75240
SLLS266G
15-kV
SN65220DBV
SN65220YZB
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Untitled
Abstract: No abstract text available
Text: TPS799xx www.ti.com SBVS056I – JANUARY 2005 – REVISED NOVEMBER 2007 200mA, Low Quiescent Current, Ultra-Low Noise, High PSRR Low Dropout Linear Regulator FEATURES DESCRIPTION 1 • 200mA Low Dropout Regulator with EN • Low IQ: 40µA • Multiple Output Voltage Versions Available:
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TPS799xx
SBVS056I
200mA,
TPS799xx
100mV
200mA
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"power sourcing equipment"
Abstract: No abstract text available
Text: TPS23754 TPS23754-1 TPS23756 www.ti.com . SLVS885B – OCTOBER 2008 – REVISED MAY 2009 High Power/High Efficiency PoE Interface and DC/DC Controller
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TPS23754
TPS23754-1
TPS23756
SLVS885B
TSSOP-20
TPS23754/6
"power sourcing equipment"
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7382
Abstract: VNS3NV0413TR VND3NV04 VND3NV04-1 VND3NV0413TR VND3NV04-1-E VND3NV04-E VNN3NV04 VNN3NV0413TR VNS3NV04
Text: VNN3NV04, VNS3NV04 VND3NV04, VND3NV04-1 OMNIFET II fully autoprotected Power MOSFET Features Type RDS on VNN3NV04 VNS3NV04 VND3NV04 VND3NV04-1 Ilim Vclamp 2 1 120 mΩ 3.5 A 40 V 2 3 SO-8 SOT-223 • Linear current limitation ■ Thermal shutdown ■ Short circuit protection
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VNN3NV04,
VNS3NV04
VND3NV04,
VND3NV04-1
VNN3NV04
VND3NV04
OT-223
2002/95/EC
7382
VNS3NV0413TR
VND3NV04
VND3NV04-1
VND3NV0413TR
VND3NV04-1-E
VND3NV04-E
VNN3NV04
VNN3NV0413TR
VNS3NV04
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25N95K3
Abstract: STW25N95K3 Stw25n95
Text: STW25N95K3 N-channel 950 V, 0.32 Ω, 22 A, TO-247 SuperMESH3 Power MOSFET Features Type VDSS RDS on max STW25N95K3 950 V < 0.36 Ω Pw ID 22 A 400 W • 100% avalanche tested ■ Extremely large avalanche performance ■ Gate charge minimized ■ Very low intrinsic capacitances
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STW25N95K3
O-247
O-247
25N95K3
STW25N95K3
Stw25n95
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Untitled
Abstract: No abstract text available
Text: bq27541 www.ti.com . SLUS861 – DECEMBER 2008 Single Cell Li-Ion Battery Fuel Gauge for Battery Pack Integration
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bq27541
SLUS861
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banana jack footprint
Abstract: phycomp capacitors NPO
Text: THS9000 www.ti.com. SLOS425D – DECEMBER 2003 – REVISED OCTOBER 2008 50 MHz to 400 MHz CASCADEABLE AMPLIFIER FEATURES
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THS9000
SLOS425D
IS-136,
EDGE/UWE-136
IS-95,
CDMA2000
IEEE802
THS9000
banana jack footprint
phycomp capacitors NPO
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NAND512R3A2D
Abstract: NAND512W3A2D NAND512W3A2 NI3087 t 0433 transistor
Text: NAND512xxA2D 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width
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NAND512xxA2D
512-Mbit,
528-byte/264-word
TSOP48
VFBGA63
NAND512R3A2D
NAND512W3A2D
NAND512W3A2
NI3087
t 0433 transistor
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103AT
Abstract: bq27501 bq27541 bq27541DRZR bq27541DRZT BQ27541DRZT-V200
Text: Not Recommended for New Designs bq27541 www.ti.com SLUS861 – DECEMBER 2008 Single Cell Li-Ion Battery Fuel Gauge for Battery Pack Integration Check for Samples: bq27541 FEATURES APPLICATIONS • • • • • • 1 23 • • • • Battery Fuel Gauge for 1-Series Li-Ion
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bq27541
SLUS861
103AT
bq27501
bq27541DRZR
bq27541DRZT
BQ27541DRZT-V200
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BQ27541DRZT
Abstract: bq27541DRZR tda audio vs 50v 103AT bq27501 bq27541 tda 4200 application
Text: bq27541 www.ti.com . SLUS861 – DECEMBER 2008 Single Cell Li-Ion Battery Fuel Gauge for Battery Pack Integration
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bq27541
SLUS861
BQ27541DRZT
bq27541DRZR
tda audio vs 50v
103AT
bq27501
tda 4200 application
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Untitled
Abstract: No abstract text available
Text: 696.42 MHz Delay Line 1.4 MHz Bandwidth Part Number SD0696BA03217S DESCRIPTION • • • 696.42 MHz SAW delay line with 1.4 MHz bandwidth. 5 x 7 mm ceramic LCC. RoHS compliant. TYPICAL PERFORMANCE Amp 10 dB/div Amp 1 dB/div Phase 10 deg/div Delay 100 ns/div
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SD0696BA03217S
SD0696BA03217S
27-Apr-2009
BA03217S
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NAND512W3A2D
Abstract: NAND512R3A2D
Text: NAND512xxA2D 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width
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NAND512xxA2D
512-Mbit,
528-byte/264-word
TSOP48
VFBGA63
NAND512W3A2D
NAND512R3A2D
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CDS16412Q5A
Abstract: CSD16412Q5A BR 950C
Text: N-Channel CICLON NexFET Power MOSFETs CSD16412Q5A Features Product Summary • Ultra Low Qg & Qgd • Low Thermal Resistance D D D D G S S S • Avalanche Rated • Pb Free Terminal Plating VDS 25 V S 1 8 D Qg 2.9 nC S 2 7 D Qgd S 3 6 D D G 4 0.7 RDS on
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CSD16412Q5A
CDS16412Q5A
CSD16412Q5A
BR 950C
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Untitled
Abstract: No abstract text available
Text: VNN3NV04, VNS3NV04 VND3NV04, VND3NV04-1 OMNIFET II fully autoprotected Power MOSFET Features Type RDS on VNN3NV04 VNS3NV04 VND3NV04 VND3NV04-1 Ilim Vclamp 2 1 120 mΩ 3.5 A 40 V 2 3 SO-8 SOT-223 • Linear current limitation ■ Thermal shutdown ■ Short circuit protection
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VNN3NV04,
VNS3NV04
VND3NV04,
VND3NV04-1
VNN3NV04
VND3NV04
OT-223
2002/95/EC
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CSD16410Q5A
Abstract: No abstract text available
Text: N-Channel CICLON NexFET Power MOSFETs CSD16410Q5A Features Product Summary • Ultra Low Qg & Qgd • Low Thermal Resistance D D D D G S S S • Avalanche Rated • Pb Free Terminal Plating VDS 25 V S 1 8 D Qg 3.9 nC S 2 7 D Qgd S 3 6 D D G 4 5 D RDS on
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CSD16410Q5A
CSD16410Q5A
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MDT2012-CH1R0AN
Abstract: MDT2012-CH1R0A
Text: TPS61240, TPS61241 www.ti.com . SLVS806 – APRIL 2009 3.5-MHz High Efficiency Step-Up Converter
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TPS61240,
TPS61241
SLVS806
450mA
MDT2012-CH1R0AN
MDT2012-CH1R0A
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bq20z75
Abstract: bq20z75DBT bq20z75DBTR bq20z75DBTR-v160 bq20z75DBT-v160 bq294xx
Text: bq20z75 www.ti.com. SLUS723C – JULY 2007 – REVISED JULY 2008 SBS 1.1-COMPLIANT GAS GAUGE AND PROTECTION-ENABLED IC
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bq20z75
SLUS723C
bq20z75DBT
bq20z75DBTR
bq20z75DBTR-v160
bq20z75DBT-v160
bq294xx
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TSC2004IRTJR
Abstract: QFN-20 TSC2004 TSC2004IRTJT TSC2004IYZKR TSC2004IYZKT
Text: BurrĆBrown Products from Texas Instruments TS TSC2004 C20 04 SBAS408E – JUNE 2007 – REVISED MARCH 2008 1.2V to 3.6V, 12-Bit, Nanopower, 4-Wire TOUCH SCREEN CONTROLLER with I2C Interface FEATURES APPLICATIONS • • • • • • • • • •
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TSC2004
SBAS408E
12-Bit,
10-Bit
12-Bit
50SSPS
50SSPS
TSC2004IRTJR
QFN-20
TSC2004
TSC2004IRTJT
TSC2004IYZKR
TSC2004IYZKT
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Untitled
Abstract: No abstract text available
Text: NAND512xxA2D NAND01GxxA2C 512-Mbit, 1-Gbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512-Mbit, 1-Gbit memory array – Cost effective solutions for mass storage applications NAND interface
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NAND512xxA2D
NAND01GxxA2C
512-Mbit,
528-byte/264-word
TSOP48
VFBGA63
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t 0433 transistor
Abstract: NAND512R3A2D
Text: NAND512xxA2D NAND01GxxA2C 512-Mbit, 1-Gbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512-Mbit, 1-Gbit memory array – Cost effective solutions for mass storage applications NAND interface
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NAND512xxA2D
NAND01GxxA2C
512-Mbit,
528-byte/264-word
TSOP48
VFBGA63
t 0433 transistor
NAND512R3A2D
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CSD16404Q5A
Abstract: No abstract text available
Text: N-Channel CICLON NexFET Power MOSFETs CSD16404Q5A Features Product Summary • Ultra Low Qg & Qgd • Low Thermal Resistance D D D D G S S S • Avalanche Rated • Pb Free Terminal Plating VDS 25 V S 1 8 D Qg 6.5 nC S 2 7 D Qgd S 3 6 D D G 4 5 D RDS on
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CSD16404Q5A
CSD16404Q5A
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CSD16403Q5A
Abstract: CSD16403Q5
Text: N-Channel CICLON NexFET Power MOSFETs CSD16403Q5A Features Product Summary • Ultra Low Qg & Qgd • Low Thermal Resistance D D D D G S S S • Avalanche Rated • Pb Free Terminal Plating VDS 25 V S 1 8 D Qg 13.3 nC S 2 7 D Qgd S 3 6 D D G 4 3.5 RDS on
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CSD16403Q5A
CSD16403Q5A
CSD16403Q5
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800-032
Abstract: No abstract text available
Text: Series 800 Series 800 “Mighty Mouse” with UN Mating Thread Right Angle PCB Receptacle Headers 800-032-07 Glenair's right angle 800-032 connectors offer military grade performance in a small, economical package. Ideal for 100/1000BASE-T or IEEE 1394, these
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100/1000BASE-T
MIL-STD-810
8-13S
9-19S
27-APR-2009
800-032
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STW25N95K3
Abstract: 25N95K3 ENERGY SAVING UNIT Diagram transistor st make 803 B2 marking code Zener
Text: STW25N95K3 N-channel 950 V, 0.32 Ω, 22 A, TO-247 SuperMESH3 Power MOSFET Preliminary data Features Type VDSS RDS on max STW25N95K3 950 V < 0.36 Ω Pw ID 22 A 400 W • 100% avalanche tested ■ Extremely large avalanche performance ■ Gate charge minimized
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STW25N95K3
O-247
STW25N95K3
25N95K3
ENERGY SAVING UNIT Diagram
transistor st make 803
B2 marking code Zener
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