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    27C64 UV EPROM Search Results

    27C64 UV EPROM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD27C64-25 Rochester Electronics LLC 27C64 - 64K (8K x 8) EPROM Visit Rochester Electronics LLC Buy
    MD27C64-20 Rochester Electronics LLC 27C64 - 64K (8K x 8) EPROM Visit Rochester Electronics LLC Buy
    MD27C64-35 Rochester Electronics LLC 27C64 - 64K (8K x 8) EPROM Visit Rochester Electronics LLC Buy
    MC27C64-20/B Rochester Electronics LLC 27C64 - 64K (8K x 8) EPROM Visit Rochester Electronics LLC Buy
    MD27C64-15/B Rochester Electronics LLC 27C64 - 64K (8K x 8) EPROM Visit Rochester Electronics LLC Buy

    27C64 UV EPROM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    27c64-25

    Abstract: No abstract text available
    Text: CMOS UV ERASABLE 65536-BIT READ ONLY MEMORY FU JITSU MBM 27C64-20 MBM 27C64-25 MBM 27C64-30 CMOS 8192x8B IT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C64 is a high speed 65,5 36 b it static com plem entary MOS erasable and electrically reprogrammable read only m em ory EPROM . It is


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    65536-BIT 27C64-20 27C64-25 27C64-30 8192x8B 27C64 28-pin 32-Pad 27C64. 27c64-25 PDF

    Fujitsu 27C64

    Abstract: 27c64-30
    Text: CMOS UV ERASABLE 65536-BIT READ ONLY MEMORY FU JITSU MBM 27C64-20 MBM 27C64-25 MBM 27C64-30 CMOS 81 92 x8B IT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C64 is a high speed 6 5 ,5 3 6 b it static com plem entary MOS erasable and electrically reprogrammable read only m em ory EPROM . It is


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    65536-BIT 27C64-20 27C64-25 27C64-30 27C64 28-pin 32-Pad 27C64. 28-LE DIP-28C-C01) Fujitsu 27C64 27c64-30 PDF

    eprom 27c64q200

    Abstract: 27C64 ROM 27C64 eprom 27c64 PROGRAMMER CIRCUIT 27C32 27c32 eprom cmos prom 27C64Q200 J28AQ EPROM 27C32
    Text: 27C64 65 536-Bit 8 192 x 8 UV Erasable CMOS PROM Military Qualified General Description Features The 27C64 is a high-speed 64K UV erasable and electrically reprogrammable CMOS EPROM ideally suited for applications where fast turnaround pattern experimentation and


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    27C64 536-Bit 27C64 28-pin 32-pin eprom 27c64q200 27C64 ROM eprom 27c64 PROGRAMMER CIRCUIT 27C32 27c32 eprom cmos prom 27C64Q200 J28AQ EPROM 27C32 PDF

    27S12

    Abstract: 27128 memory nsc600
    Text: 3IE DApril 1989 V 6 - / 3 - Z .J 27C64 65,536-Bit 8,192 x 8 UV Erasable CMOS PROM Military Qualified General Description Features The 27C64 Is a high-speed 64K UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applica­ tions where fast turnaround, pattern experimentation and


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    0112b 27C64 536-Bit 28-pin 32-pin 2-26A 39M131931 27S12 27128 memory nsc600 PDF

    maxim 27c64

    Abstract: DS60011
    Text: & 27C64 M ic r o c h ip 64K 8K x 8 CMOS UV Erasable PROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27C64 is a CMOS 64K bit — 120ns maximum access time • CMOS Technology for low power consumption ultraviolet light Erasable (electrically) Programmable


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    27C64 120ns 28-pin 32-pin DS11107D-7 27C64 DS11107D-8 maxim 27c64 DS60011 PDF

    intel 27c64

    Abstract: 87C64 27C640 27C64 27C64 8k EPROM N27C64-1 87C64-20 N27C64 N27C64-20 87C64-25
    Text: intei 27C64/87C64 64K 8K x 8 CHMOS PRODUCTION AND UV ERASABLE PROMS • CHMOS Microcontroller and Microprocessor Compatible -8 7 C 6 4 -in teg ra ted Address Latch — Universal 28 Pin Memory Site, 2-line Control _ ■ Low Power Consumption — 100 fxA Maximum Standby Current


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    27C64/87C64 -87C64-integrated 28-Pin C01nSUm 32-Lead 27C64 87C64 27C64. 27C64/87C64 intel 27c64 27C640 27C64 8k EPROM N27C64-1 87C64-20 N27C64 N27C64-20 87C64-25 PDF

    27C64MQ25

    Abstract: 27C64MQB
    Text: O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX_ 27C64 CMOS 65, 536 BIT 8192 x 8 UV ERASABLE PROM MEMORY DESCRIPTION Th e 27C 64 is a h ig h -s p e e d 6 4 K U V e ra s a b le and e le c tric a lly rep ro g ram m a b le EPR O M id e a lly suited


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    27C64 32-pad 90113-OOx 90113-OOx 27C64MQ25 27C64MQ30 27C64MEQ25 27C64MQB PDF

    27C64-30

    Abstract: Fujitsu 27C64-30 i3001 Fujitsu 27C64
    Text: FUJITSU M I C RO ELECT RO NICS S3E D 37^7^5 000=1152 7 C M O S IU V : E R A S A B L F U J IT S U 6 5 5 3 6 -B C E R E A ò nl ^ m em ofm M CMOS 8192X8BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C64 is a high speed 6 5 ,5 3 6 bit static complementary MOS


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    8192X8BIT 27C64 28-pin 32-Pad 27C64. 320sec. 16sec. 27C64-25 27C64-30 37M17b2 27C64-30 Fujitsu 27C64-30 i3001 Fujitsu 27C64 PDF

    27C64 8k EPROM

    Abstract: ic 27c64 27c642
    Text: CY27C64 8K x 8 EPROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 70 ns commercial Functional Description The CY27C64 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY27C64 automatically


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    CY27C64 27C64 8k EPROM ic 27c64 27c642 PDF

    27c32

    Abstract: 27c32 eprom EPROM 27C32 27cp128 eprom 27c64 PROGRAMMER CIRCUIT NMC27C512 national semiconductor 27c32 27C64 27C16H 27C32B
    Text: National Semiconductor Application Note 472 Merrill Johnson March 1987 INTRODUCTION National Semiconductor is a broad-based supplier of low power CMOS EPROMs CMOS EPROMs are programmed the same way NMOS EPROMs are programmed CMOS and NMOS EPROMs are pin compatible in programming


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    ic 27c64

    Abstract: i27c64 27c64
    Text: Advanced Micro Devices Am27C64 64 Kilobit 8,192 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERS ICS • Latch-up protected to 100 mA from -1 V to Vcc + 1 V Fast access time — 45 ns ■ Low power consum ption High noise imm unity — 20 (iA typical CM O S standby ci rrent


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    Am27C64 28-pin 32-pin 27C64 64-Kbit 27C64 KS000010 ic 27c64 i27c64 PDF

    27C64-150

    Abstract: 27C64-3 eprom 27c64 27C64 27C64-1 27C64-2 27C64-200 CY27C64 27C644 27C64 8k EPROM
    Text: fax id: 3006 1CY 27C6 4 CY27C64 8K x 8 EPROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these EPROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.


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    CY27C64 600-mil-wide 27C64-150 27C64-3 eprom 27c64 27C64 27C64-1 27C64-2 27C64-200 CY27C64 27C644 27C64 8k EPROM PDF

    27C64-150

    Abstract: CY27C64 27C64 27C64-200
    Text: CY27C64 8K x 8 EPROM D Features D D D D D D CMOS for optimum speed/power Functional Description Windowed for reprogrammability The CY27C64 is a highĆperformance 8192 word by 8 bit CMOS PROM. When deselected, the CY27C64 automatically powers down into a lowĆpower standby


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    CY27C64 CY27C64 600milwide 27C64-150 27C64 27C64-200 PDF

    winbond 25080

    Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
    Text: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010


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    2732B 27C100 27HB010 27C256 27HC64 27C128 27C040 7128A winbond 25080 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB PDF

    27c64 uv eprom

    Abstract: 27C64 8k EPROM
    Text: 27C64 M ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance —120 ns access time available • CMOS Technology for low power consumption —20 mA Active current —100 jiA Standby current • Factory programming available


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    27C64 27C64 DS111071-page 27c64 uv eprom 27C64 8k EPROM PDF

    ic 27c64

    Abstract: No abstract text available
    Text: $ M ic r o c h ip 27C64 64K 8K x 8 CMOS EPROM PACKAGE TYPE FEATURES • High speed performance DIP/SOIC - 120 ns access tim e available Vpp C • 1 - 100 |iA Standby current • Factory program m ing available 25 H a s A6 C 5 A4 C 6 24 Q7 C 8 AlC 9 A2 • Auto ID aids autom ated program m ing


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    28-pin 32-pin 27C64 DS11107J-page 27C64 ic 27c64 PDF

    loo8

    Abstract: No abstract text available
    Text: & 27C64 Microchip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120ns access time available • CMOS Technology for low power consumption —20mA Active current — 10OjiA Standby current • Factory programming available • Auto-insertion-compatible plastic packages


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    27C64 27C64 120ns. DS11107H-page MCHPD001 loo8 PDF

    Untitled

    Abstract: No abstract text available
    Text: & 27C64 M icro ch ip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120ns access time available • CMOS Technology for low power consumption — 20mA Active current — 10OnA Standby current • Factory programming available • Auto-insertlon-compatible plastic packages


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    27C64 120ns 10OnA 28-pin 32-pin DS11107H-page PDF

    27c32

    Abstract: EPROM 27C32 27c32 eprom EPROM 2764 nmc27cp128q300 27C128 eprom 27C16 Vpp of 27256 eprom 2716 eprom datasheet 27C512
    Text: NMC27C1023 VJFÊ National /2 /m Semiconductor ÆUm Corporation ADVANCED INFORMATION NMC27C1023 1,048,576-Bit 128k x 8 UV Erasable CMOS PROM General Description Features The NMC27C1023 is a high-speed 1024k UV erasable and electrically reprogrammable CMOS EPROM, ideally suited


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    NMC27C1023 576-Bit NMC27C1023 1024k 32-pin tl/d/8805-2 NMC27CP128 NMC27CP128Q 27c32 EPROM 27C32 27c32 eprom EPROM 2764 nmc27cp128q300 27C128 eprom 27C16 Vpp of 27256 eprom 2716 eprom datasheet 27C512 PDF

    Untitled

    Abstract: No abstract text available
    Text: 27C64 M ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance —120 ns access time available • CMOS Technology for low power consumption —20 mA Active current — 100 nA Standby current • Factory programming available


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    27C64 27C64 28-Lead, 44-Lead, 10x10mm) bl03201 001DS11 DS00049E PDF

    AM27C64

    Abstract: No abstract text available
    Text: AOV MI CR O MEMORY IM E D Q 0ES7S26 O O S V a 1! ? i l T-Hb-i%-Z°[ A m 2 7 C 6 4 “ 8,192 x 8-Bit CMOS EPROM £ Devices D IS T IN C T IV E C H A R A C T E R IS T IC S JEDEC-approved pinout ± 10% power supply tolerance available One-Time Programmable OTP Flashrite program ­


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    0ES7S26 Am27C64 64K-bit, 27C64 0257S2Ã T-46-13-29 WF000555 PDF

    am27c64

    Abstract: AM27C64-250 st m27c64 AM27C64-205
    Text: Prelim inary Am27C64 Advanced M icro 8,192 x 8-Bit C M O S EPRO M Devices DISTINCTIVE CHARACTERISTICS • • • • Fast access time — 55 ns Low power consumption: - 100 nA maximum standby current Programming voltage: 12.5 V Single + 5-V power supply • JEDEC-approved pinout


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    Am27C64 64K-bit, 27C64 WF000555 AM27C64-250 st m27c64 AM27C64-205 PDF

    8510203YA

    Abstract: QP27C64 8510201ZA QP27C64-20
    Text: QP27C64 March 9, 2009 QP27C64 – 64 Kilobit 8K x 8 CMOS EPROM General Description The QP27C64 is an 8Kx8 (64-Kbit), UV erasable programmable read-only memory. It operates from a single +5 V supply, has a static standby mode, and features fast single address location programming. The QP27C64 meets the


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    QP27C64 QP27C64 64-Kbit) 27C64 Mil-Std-1835 Mil-Std-883 Mil-PRF-38535, 8510203YA 8510201ZA QP27C64-20 PDF

    Untitled

    Abstract: No abstract text available
    Text: Am27C64 8,192 X 8-Bit CMOS EPROM > 3 DISTINCTIVE CHARACTERISTICS • • • • • • • Fast a ccess lim e — 55 ns Low pow er consum ption: - 100 juA maxim um standby current Program m ing voltage: 12.5 V Single + 5 -V pow er supply • M -J JED EC-approved pinout


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    Am27C64 AIS-WCP-SM-2/89-0 PDF