27C64 8k EPROM
Abstract: eprom 27c64 27C64 EPROM programmer 27C64-20 eprom 27c64 PROGRAMMER CIRCUIT MICROCHIP X-10 CODE 200B 27C64 27C64-12 27C64-15
Text: 27C64 64K 8K x 8 CMOS EPROM PACKAGE TYPES 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC PGM NC A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 30 31 1 32 2 5 29 6 28 7 8 9 10 27 26 25 24 A8 A9 A11 NC OE A10 CE O7 O6 20 19 21 18 22 13 17 23 12 16 11 15 A6 A5 A4 A3 A2
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27C64
27C64
DS11107L-page
27C64 8k EPROM
eprom 27c64
27C64 EPROM programmer
27C64-20
eprom 27c64 PROGRAMMER CIRCUIT
MICROCHIP X-10 CODE
200B
27C64-12
27C64-15
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27C64
Abstract: eprom 27c64 PROGRAMMER CIRCUIT 200B 27C64-12 27C64-15 27C64-17 27C64-20 27C64-25 27C64 8k EPROM
Text: 27C64 64K 8K x 8 CMOS EPROM •1 2 3 4 5 6 7 8 9 10 11 12 13 14 27C64 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC PGM NC A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 30 31 1 32 2 5 29 6 28 7 27 8 26 27C64 9 25 22 13 21 A8 A9 A11 NC OE A10 CE O7 O6 20 23 12 19 24
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27C64
27C64
DS11107K-page
eprom 27c64 PROGRAMMER CIRCUIT
200B
27C64-12
27C64-15
27C64-17
27C64-20
27C64-25
27C64 8k EPROM
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27C64
Abstract: 27C64-12 27C64-15 27C64-17 27C64-20 27C64-25 27C64 8k EPROM
Text: Obsolete Device 27C64 64K 8K x 8 CMOS EPROM 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC PGM NC A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 30 31 1 32 2 5 29 6 28 7 8 9 10 27 26 25 24 A8 A9 A11 NC OE A10 CE O7 O6 20 19 21 18 22 13 17 23 12 16 11 15 A6 A5 A4 A3 A2
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27C64
27C64
than35-882
D-85737
NL-5152
27C64-12
27C64-15
27C64-17
27C64-20
27C64-25
27C64 8k EPROM
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Untitled
Abstract: No abstract text available
Text: Obsolete Device 27C64 64K 8K x 8 CMOS EPROM 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC PGM NC A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 30 31 1 32 2 5 29 6 28 7 8 9 10 27 26 25 24 A8 A9 A11 NC OE A10 CE O7 O6 20 19 21 18 22 13 17 23 12 16 11 15 A6 A5 A4 A3 A2
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27C64
27C64
than82
D-85737
NL-5152
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27C64 8k EPROM
Abstract: 27C64 27C64 microchip eprom 27c64 PROGRAMMER CIRCUIT 200B 27C64-12 27C64-15 27C64-17 27C64-20 27C64-25
Text: 27C64 64K 8K x 8 CMOS EPROM PACKAGE TYPES 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC PGM NC A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 30 31 1 32 2 5 29 6 28 7 8 9 10 27 26 25 24 A8 A9 A11 NC OE A10 CE O7 O6 20 19 21 18 22 13 17 23 12 16 11 15 A6 A5 A4 A3 A2
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27C64
27C64
D-81739
27C64 8k EPROM
27C64 microchip
eprom 27c64 PROGRAMMER CIRCUIT
200B
27C64-12
27C64-15
27C64-17
27C64-20
27C64-25
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27c32
Abstract: 27c32 eprom EPROM 27C32 27cp128 eprom 27c64 PROGRAMMER CIRCUIT NMC27C512 national semiconductor 27c32 27C64 27C16H 27C32B
Text: National Semiconductor Application Note 472 Merrill Johnson March 1987 INTRODUCTION National Semiconductor is a broad-based supplier of low power CMOS EPROMs CMOS EPROMs are programmed the same way NMOS EPROMs are programmed CMOS and NMOS EPROMs are pin compatible in programming
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40 pin eprom programmer circuit
Abstract: 27C257 eprom 27c64 PROGRAMMER CIRCUIT 27C64 EPROM programmer Motorola multimeter 27C64 8k EPROM introduction of eprom programmer 27c64 27c64 EEPROM eprom 27C512 free circuit eprom programmer
Text: MOTOROLA SEMICONDUCTOR USERS MANUAL M68HC705UGANG M68HC705UGANG Gang Programmer Users Manual This document contains information on products under development. Motorola reserves the right to change or discontinue these products without notice. !MOTOROLA MOTOROLA, INC., 2001
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M68HC705UGANG
M68HC705UGANG
40 pin eprom programmer circuit
27C257
eprom 27c64 PROGRAMMER CIRCUIT
27C64 EPROM programmer
Motorola multimeter
27C64 8k EPROM
introduction of eprom programmer 27c64
27c64 EEPROM
eprom 27C512
free circuit eprom programmer
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Untitled
Abstract: No abstract text available
Text: 27C64 M ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES PACKAGETYPES DIP/SOIC • High speed performance - 120 ns access time available • CMOS Technology for low power consumption - 20 mA Active current Vpp [ I • 1 28 H V c c A12C 2 A7 C 3 27 26 □ NC
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27C64
28-pin
DS11107L-page
27C64
bl032Gl
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27S12
Abstract: 27128 memory nsc600
Text: 3IE DApril 1989 V 6 - / 3 - Z .J 27C64 65,536-Bit 8,192 x 8 UV Erasable CMOS PROM Military Qualified General Description Features The 27C64 Is a high-speed 64K UV erasable and electrically reprogrammable CMOS EPROM, ideally suited for applica tions where fast turnaround, pattern experimentation and
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0112b
27C64
536-Bit
28-pin
32-pin
2-26A
39M131931
27S12
27128 memory
nsc600
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intel 27c64
Abstract: 87C64 27C640 27C64 27C64 8k EPROM N27C64-1 87C64-20 N27C64 N27C64-20 87C64-25
Text: intei 27C64/87C64 64K 8K x 8 CHMOS PRODUCTION AND UV ERASABLE PROMS • CHMOS Microcontroller and Microprocessor Compatible -8 7 C 6 4 -in teg ra ted Address Latch — Universal 28 Pin Memory Site, 2-line Control _ ■ Low Power Consumption — 100 fxA Maximum Standby Current
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27C64/87C64
-87C64-integrated
28-Pin
C01nSUm
32-Lead
27C64
87C64
27C64.
27C64/87C64
intel 27c64
27C640
27C64 8k EPROM
N27C64-1
87C64-20
N27C64
N27C64-20
87C64-25
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ic 27c64
Abstract: i27c64 27c64
Text: Advanced Micro Devices Am27C64 64 Kilobit 8,192 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERS ICS • Latch-up protected to 100 mA from -1 V to Vcc + 1 V Fast access time — 45 ns ■ Low power consum ption High noise imm unity — 20 (iA typical CM O S standby ci rrent
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Am27C64
28-pin
32-pin
27C64
64-Kbit
27C64
KS000010
ic 27c64
i27c64
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27C64 8k EPROM
Abstract: ic 27c64 27c642
Text: CY27C64 8K x 8 EPROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 70 ns commercial Functional Description The CY27C64 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY27C64 automatically
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CY27C64
27C64 8k EPROM
ic 27c64
27c642
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Untitled
Abstract: No abstract text available
Text: 27C64 M ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES PACKAGE TYPE DIP/SOIC • High speed performance - 120 ns access time available Vpp C A12C A7C A 6C A 5C A4C •1 2 3 4 5 6 A3C 7 A2Ü B A lC 9 A0 C 10 o o C 11 01C 12 02 £ 13 VesE 14 • C M O S Technology for low power consumption
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27C64
DS11l07K-page
bl03201
00130b?
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Untitled
Abstract: No abstract text available
Text: M $ 27C64 ic r o c h ip 64K 8K x 8 CMOS EPROM FEATURES PACKAGE TYPE • High speed performance DIP/SOIC - 120 ns access time available VppQ • 1 28 H Vcc A12C 2 • CMOS Technology for low power consumption 27 JPGM - 20 mA Active current A 7C 3 A 6C 4 26 13 n c
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27C64
28-pin
32-pin
DS11107J-page
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ic 27c64
Abstract: No abstract text available
Text: $ M ic r o c h ip 27C64 64K 8K x 8 CMOS EPROM PACKAGE TYPE FEATURES • High speed performance DIP/SOIC - 120 ns access tim e available Vpp C • 1 - 100 |iA Standby current • Factory program m ing available 25 H a s A6 C 5 A4 C 6 24 Q7 C 8 AlC 9 A2 • Auto ID aids autom ated program m ing
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28-pin
32-pin
27C64
DS11107J-page
27C64
ic 27c64
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loo8
Abstract: No abstract text available
Text: & 27C64 Microchip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120ns access time available • CMOS Technology for low power consumption —20mA Active current — 10OjiA Standby current • Factory programming available • Auto-insertion-compatible plastic packages
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27C64
27C64
120ns.
DS11107H-page
MCHPD001
loo8
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Untitled
Abstract: No abstract text available
Text: 27C64 & M icrochip 64K 8K x 8 CMOS EPROM DESCRIPTION FEATURES The Microchip Technology Inc 27C64 is a CMOS 64K bit (electrically) Programmable Read Only Memory. The device is organized as 8K words by 8 bits (8K bytes). Accessing individual bytes from an address transition or
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27C64
27C64
120ns.
120ns
DS11107F-7
DS11107F-8
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27c64-25
Abstract: No abstract text available
Text: CMOS UV ERASABLE 65536-BIT READ ONLY MEMORY FU JITSU MBM 27C64-20 MBM 27C64-25 MBM 27C64-30 CMOS 8192x8B IT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C64 is a high speed 65,5 36 b it static com plem entary MOS erasable and electrically reprogrammable read only m em ory EPROM . It is
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65536-BIT
27C64-20
27C64-25
27C64-30
8192x8B
27C64
28-pin
32-Pad
27C64.
27c64-25
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27C64-120
Abstract: 27C64-70 27C64 CY27C64 CY7C266 27C6470 27C61 27C64-90
Text: CY27C64 F / CYPRESS 8K x 8 EPROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 70 ns commercial Functional D escription • Low power — 440 mW (commercial) — 530 mW (military) • Super low standby power
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CY27C64
600-mil-wide
150PC
28-Lead
600-Mil)
CY27C64â
150WC
27C64-120
27C64-70
27C64
CY7C266
27C6470
27C61
27C64-90
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Fujitsu 27C64
Abstract: 27c64-30
Text: CMOS UV ERASABLE 65536-BIT READ ONLY MEMORY FU JITSU MBM 27C64-20 MBM 27C64-25 MBM 27C64-30 CMOS 81 92 x8B IT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C64 is a high speed 6 5 ,5 3 6 b it static com plem entary MOS erasable and electrically reprogrammable read only m em ory EPROM . It is
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65536-BIT
27C64-20
27C64-25
27C64-30
27C64
28-pin
32-Pad
27C64.
28-LE
DIP-28C-C01)
Fujitsu 27C64
27c64-30
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27C64 8k EPROM
Abstract: eprom 27c64 27C64 27C64-20 7258 P15 Package CY27C64 CY7C266 200JC
Text: CY27C64 F / CYPRESS 8K x 8 EPROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 70 ns commercial Functional D escription • Low power — 440 mW (commercial) — 530 mW (military) • Super low standby power
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CY27C64
CY27C64
600-mil-wide
CY27C64â
200JC
32-Lead
200PC
28-Lead
27C64 8k EPROM
eprom 27c64
27C64
27C64-20
7258
P15 Package
CY7C266
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Untitled
Abstract: No abstract text available
Text: & 27C64 M icro ch ip 64K 8K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 120ns access time available • CMOS Technology for low power consumption — 20mA Active current — 10OnA Standby current • Factory programming available • Auto-insertlon-compatible plastic packages
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27C64
120ns
10OnA
28-pin
32-pin
DS11107H-page
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27C64-30
Abstract: Fujitsu 27C64-30 i3001 Fujitsu 27C64
Text: FUJITSU M I C RO ELECT RO NICS S3E D 37^7^5 000=1152 7 C M O S IU V : E R A S A B L F U J IT S U 6 5 5 3 6 -B C E R E A ò nl ^ m em ofm M CMOS 8192X8BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM 27C64 is a high speed 6 5 ,5 3 6 bit static complementary MOS
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8192X8BIT
27C64
28-pin
32-Pad
27C64.
320sec.
16sec.
27C64-25
27C64-30
37M17b2
27C64-30
Fujitsu 27C64-30
i3001
Fujitsu 27C64
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27C64MQ25
Abstract: 27C64MQB
Text: O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX_ 27C64 CMOS 65, 536 BIT 8192 x 8 UV ERASABLE PROM MEMORY DESCRIPTION Th e 27C 64 is a h ig h -s p e e d 6 4 K U V e ra s a b le and e le c tric a lly rep ro g ram m a b le EPR O M id e a lly suited
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27C64
32-pad
90113-OOx
90113-OOx
27C64MQ25
27C64MQ30
27C64MEQ25
27C64MQB
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