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    27E- TRANSISTOR Search Results

    27E- TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    27E- TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AT3904

    Abstract: raytheon transistor AT3866A BC177 pnp transistor AT915 Raytheon AT3906 transistor eb 2030 AT720 AT918 at3209
    Text: RAYTHEON/ SEMICONDUCTOR 27E D • 7S^73bD DQDTBbT Raytheon Company Semiconductor Division S ■ 7^27-9*? Raytheon Transistor Dice Catalog I RAYTHEON/ SEMICONDUCTOR 27E D ■ TSTVBbO 0007370 1 ■ J-S7- 11 Features Shipping Formats ■ Wafer size 2'A inches, 3 inches


    OCR Scan     		PDF AT328A AT329A. BCY17-34 AT3906. AT3905 AT4125. AT4126 75cl73b0 0DD7373 AT3904 raytheon transistor AT3866A BC177 pnp transistor AT915 Raytheon AT3906 transistor eb 2030 AT720 AT918 at3209

    GE6062

    Abstract: GE6060 ge6061
    Text: HARRIS SEMICOND SECTOR 27E » • 43QHE,.7]i 0020415 2 « H A S !_ File Number Power Transistors GE6060,GE6061,GE6062 15.85 - " r '3 3 '2 ^ 1 ' 20-Ampere N-P-N Darlington Power Transistors


    OCR Scan     		PDF 43QHE, GE6060 GE6061 GE6062 20-Ampere 204AA GE6060, GE6061, GE6062

    RCA8766A

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR 27E T> • 43G2271 QÛ20512 D ■ HAS Power T ran sisto ,_ RCA8766 Series File Number T - 3 10-A m pere N-P-N M onolithic Darlington Power Transistors


    OCR Scan     		PDF RCA8766 43G2271 RCA8766A

    2N6259

    Abstract: 2n3773 2N3773A 2N4348 2N 6259 2n3773m
    Text: Power Transistors File Number 526 2N3773, 2N4348, 2N6259 HARRIS SEMICOND SECTOR 27E D High-Voltage, High-Current Power Transistors Broadly Applicable Devices for Industrial and Commercial Use 43Ü5571 ÜGnaSM 3 « H A S T-33-I5 TERMINAL DESIGNATIONS T " I- 3


    OCR Scan     		PDF 2N3773, 2N4348, 2N6259 2N4348) 2N3773) 2N6259) T-33-I5 2N6259 2n3773 2N3773A 2N4348 2N 6259 2n3773m

    transistor C2075

    Abstract: g10 smd transistor SMD Transistor 1c
    Text: âUALITY TEC HN OLO GIES CORP QUALITY TECHNOLOGIES 27E D 74bbasi 0003443 VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from


    OCR Scan     		PDF 74bbasi H11A1 H11A1Z H11A1 E50151 MCT9001 transistor C2075 g10 smd transistor SMD Transistor 1c

    mca2255

    Abstract: smd TRANSISTOR code AJ
    Text: DUALITY'TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D • TMbtaSl 0003435 VDE APPROVED PHOTODARLINGTON OPTOCOUPLERS _ T - H I ~ 2 r MCA2230Z MCA2231Z MCA2255Z PACKAGE DIMENSIONS { ft rih Æj DESCRIPTION The MCA2230, MCA2231 and MCA2255 are


    OCR Scan     		PDF MCA2230Z MCA2231Z MCA2255Z MCA2230, MCA2231 MCA2255 MCA2230 MCA2231, MCT9001 smd TRANSISTOR code AJ

    2N2S05

    Abstract: 2n2510 2N2511
    Text: INTEX/ SEMITRONICS CORP jEinitron 27E D • HflbTEHb 0000201 M I 7W -¿/ discrete devices SEMICONDUCTORS Semitronics Corp. metal can transistors cont'd silicon small signal transistors M i ximum Ratini Onice Type Package 2N2351A NPN TO 2N2352 NPN TO 46 46


    OCR Scan     		PDF 2N29S9 2N302Û 2N3036 2N2S05 2n2510 2N2511

    Untitled

    Abstract: No abstract text available
    Text: microseui corp/power 27E D • tillSTSQ ÜDDGS31 T ■ PTC T -33-/3, TSA65520 Power Transistor Chip, NPN 55 A, 200 V, tf= 0.1 ps Planar Epitaxial Contact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag Chip Thickness: 22 mils Applications:


    OCR Scan     		PDF DDGS31 TSA65520

    diode 27e

    Abstract: M30ES GE5060
    Text: HA RR IS S E M I C O N D S E C T O R 27E » • M30ES.71 QOEGMO'Î 7 M H A S I - File Number 15.84 Power Transistors. GE5060, GE5061, GE5062 20-Ampere N-P-N Darlington Power Transistors


    OCR Scan     		PDF M30ES GE5060, GE5061, GE5062 20-Ampere O-204AA GE5062 43D2271, diode 27e GE5060

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR 27E D M302271 D02D54Q 5 • H A S B P ow er T ra n s is to rs _ TIP31, TIP31A, TIP31B, TIP31C File Number 991 •-P33-1I Epitaxial-Base, Silicon N-P-N


    OCR Scan     		PDF TIP31, TIP31A, TIP31B, TIP31C M302271 D02D54Q -P33-1I TIP32-series RCA-TIP31, TIP31

    S7E SMD TRANSISTOR

    Abstract: No abstract text available
    Text: DUALITY -TECHNOLOGIES CORP 27E D Bl QUALITY TECHNOLOGIES • 74bfciä51 Q0G3S4S 7 PHOTOTRANSISTOR OPTOCOUPLER T—41—83 MCT275 DESCRIPTION PACKAGE DIMENSIONS The MCT275 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is


    OCR Scan     		PDF 74bfcià MCT275 MCT275 MCT9001 S7E SMD TRANSISTOR

    RJH6674

    Abstract: CA3725 Harris RJH6675 2N6674 2N6675 RJh*6674 27e transistor l0319 2N667S RJH6675
    Text: T Power Transistors SEMICOND SECTOR - IB File Number 1164 4302271 002DGS4 7 « H A S 2N6674, 2N6675, RJH6674, RJH6675 HARRIS - * 3 27E 10-A SwitchRlaX Power Transistors TERMINAL DESIGNATIONS High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage


    OCR Scan     		PDF 2N6674, 2N6675, RJH6674, RJH6675 002DG54 O-218AC 2N6674 2N6675 RJH6674 CA3725 Harris RJH6675 2N6675 RJh*6674 27e transistor l0319 2N667S RJH6675

    T1P32B

    Abstract: No abstract text available
    Text: ^ 33- H Power Transistors TIP32, TIP32A, TIP32B, TIP32C HARRIS SEMICOND SECTOR File N um ber 27E D H 4302571 0050344 987 2 • HAS Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors For Power-Am plifier and High-Speed-Switching Applications Fea tu re s: ■


    OCR Scan     		PDF TIP32, TIP32A, TIP32B, TIP32C TIP32B. TIP32C. T1P32B

    2N1227

    Abstract: 2M214 2N1202 1j63 2N2148 2NS40 2N511 2N176 2N236A 2N420
    Text: . •■_ m Môb^EMb 0 0 0 0 2 1 3 0 H 7 ^ ;3 3 " ° ¡ JE iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d germ anium power transistors T»P» Polarity Power D issipation


    OCR Scan     		PDF 2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N1227 2M214 2N1202 1j63 2N2148 2NS40 2N511 2N236A 2N420

    TL235

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR m 27E D 43022;?! 0Ü2Q4GS T B IHAS _ 1_ _ P o w e r Transistors D73K3D1, D73K3D2 File Num ber 15.58 T - 2 3 '3 \ 3-Ampere P-N-P Power Darlington Transistors Features: • Operates from 1C without predriver


    OCR Scan     		PDF D73K3D1, D73K3D2 D72K3D1 D73K3D1 D73K3D2 O-251 43D22 TL235

    Untitled

    Abstract: No abstract text available
    Text: dJUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D • 74tibfiSl Q003541 T PHOTOTRANSISTOR OPTOCOUPLER T -4 1 -8 3 MCT274 PACKAGE DIMENSIONS [f t DESCRIPTION The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is


    OCR Scan     		PDF 74tibfiSl Q003541 MCT274 MCT274 C2090 C2079 MCT9001

    pn5114

    Abstract: PN5432
    Text: ,HARRIS SEMICOND SECTOR 4302271 QQ15bqa H M HAS 27E » T-33'ZS Switching Transistors Continued Junction FETs — N-Channel (Continued) PART NUMBER rDS(ON) n PACKAGE * Max vP V Min Max Iq ss pA Max BVqs S V Min •iHOFF) pA Max •dss mA Min Max *ap ns Max


    OCR Scan     		PDF QQ15bqa PN4091 PN4092 PN4093 2N3382 2N5018 2N5019 RS-468) pn5114 PN5432

    Untitled

    Abstract: No abstract text available
    Text: ._ Power Transistors HARRIS SEMICOND F ile N u m ber 27E SECTOR D 4302271 15.9 00202*15 7 « H A S D42C Series " '- 3 3 — 0 7 3-Ampere Silicon N-P-N Power Transistors Com plem entary to the D 43C Series TERM IN AL DESIGNATIONS Features:


    OCR Scan     		PDF D42C-serles

    2N924

    Abstract: IN1220 2N1654 INTEX transistor 2SC 1222 2n123 2H92 2N122 2n1474 terminals of 2n122
    Text: INTEX/ SEMITRONICS CORP 27E D • MfibTEMb Q0D027Ö 4 discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 silicon transistors silicon small signal transistors general purpose — alloy i f j 1#* 1 1 i Polarity ! ì 2H32M i 2N3278 ‘ 1ÎN32tk <


    OCR Scan     		PDF Q0D027Ã 2N327A N32tk 2N32W 2N323B-2N33Ã 2H92J 2N924 2N926 2N927 2N937 2N924 IN1220 2N1654 INTEX transistor 2SC 1222 2n123 2H92 2N122 2n1474 terminals of 2n122

    2N1203

    Abstract: pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N173 2N511
    Text: m . •■_ Môb^EMb 0000213 7 ^ ;3 3 " ° ¡ H J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d g e rm a n iu m pow er tra n sisto rs T»P» Polarity Power Dissipation


    OCR Scan     		PDF 2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N1203 pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N511

    Untitled

    Abstract: No abstract text available
    Text: HARR IS S E M I C O N D SECTOR 27E » • 4302271 0Q2QM?b Q * H A S Power T ra n sis to rs - MJE13009 File Number 15.92 T -3 3 - »3 High-Speed Silicon N-P-N


    OCR Scan     		PDF MJE13009 JE13009 T-33-13

    2N5954

    Abstract: M9192 2N5955
    Text: Power Transistors File Num ber 2N5954, 2N5955, 2N5956 675 HARR IS S E M I C O N D SE CT OR 27E D 4302271 OGl'nO? T Silicon P-N-P Medium-Power T ransistors 7 «HAS " - 3 3 ' TERMINAL DESIGNATIONS G eneral-Purpose Types for Sw itching Applications Features:


    OCR Scan     		PDF 2N5954, 2N5955, 2N5956 O-213AA 2N5954-2N5956. 2N5954 M9192 2N5955

    Untitled

    Abstract: No abstract text available
    Text: MICROSEMI CORP/POQIER 27E D • bllSìSG Q00G532 1 « P T C T - 33-/3 TSB71020 I*TC TECHNOLOGY Power Transistor Chip, NPN 10 A, 200 V, tf = 35ns ■ Planar Epitaxial ■ C ontact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils


    OCR Scan     		PDF Q00G532 TSB71020

    2N3614

    Abstract: 2N173 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a
    Text: . •■_ m Môb^EMb 0 00 0 21 3 0 H 7 ^ ;3 3 " ° ¡ J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. IN TEX/ SEN IT RO N IC S CORP 27E D germanium transistors cont’d germanium power transistors T»P» Polarity Power Dissipation


    OCR Scan     		PDF 2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N3614 2N441 2N1553 2N1560 2N511B 2N669 2N511 2N3312 1534a