din 4232
Abstract: IBM014405P1M IBM0144051M IBM014405B1M IBM014405M1M
Text: IBM0144051M x 410/10, 5.0V, EDO. IBM014405P1M x 410/10, 3.3V, EDO, LP, SR. IBM014405M1M x 410/10, 5.0V, EDO, LP, SR. IBM014405B1M x 410/10, 3.3V, EDO. IBM014405 IBM014405M IBM014405B IBM014405P 1M x 4 10/10 EDO DRAM Features • 1,048,576 word by 4 bit organization
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IBM0144051M
IBM014405P1M
IBM014405M1M
IBM014405B1M
IBM014405
IBM014405M
IBM014405B
IBM014405P
din 4232
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IBM0144051M
Abstract: IBM014405B1M IBM014405M1M IBM014405P1M
Text: IBM0144051M x 410/10, 5.0V, EDO. IBM014405P1M x 410/10, 3.3V, EDO, LP, SR. IBM014405M1M x 410/10, 5.0V, EDO, LP, SR. IBM014405B1M x 410/10, 3.3V, EDO. IBM014405 IBM014405B 1M x 4 10/10 EDO DRAM Features • 1,048,576 word by 4 bit organization - Active max
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IBM0144051M
IBM014405P1M
IBM014405M1M
IBM014405B1M
IBM014405
IBM014405B
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Untitled
Abstract: No abstract text available
Text: IBM014405 IBM014405B 1 M x 4 10/10 EDO DRAM Features • 1,048,576 word by 4 bit organization - Active max - 95 mA / 80 mA (3.3V) - 85 mA / 70 mA (5.0V) - Standby Current: TTL Inputs (max) - 2.0 mA - Standby Current: CMOS Inputs (max) - 1.0 mA • Power Supply: 3.3V ± 0.3V or 5.0V ± 0.5V
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IBM014405
IBM014405B
SOJ-26/20
300mil)
-70ns.
27H6242
SA14-4232-04
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Untitled
Abstract: No abstract text available
Text: I = = = = '= IBM014405 IBM014405M IBM014405B IBM014405P Preliminary 1M x 4 10/10 EDO DRAM Features • 1,048,576 word by 4 bit organization • Low Power Dissipation - Active max - 95 mA / 80 mA (3.3V) - 85 mA / 7 0 mA (5.0V) • Power Supply: 3.3V ± 0 .3V or 5.0V ± 0.5V
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IBM014405
IBM014405M
IBM014405B
IBM014405P
27H6242
IBM014405
IBM014405B
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Untitled
Abstract: No abstract text available
Text: IBM014405 IBM014405B IBM014405M IBM014405P 1M x 4 10/10 EDO DRAM 1Ä-I Features • 1,048,576 w ord by 4 bit organization Low P ow er D issipation - A ctive max - 95 m A / 8 0 m A (3.3V) - 85 m A / 70 m A (5.0V) • Pow er Supply: 3.3V ± 0.3V o r 5.0V ± 0.5V
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OCR Scan
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IBM014405
IBM014405B
IBM014405M
IBM014405P
IBM014405B
IBM014405P
300mil;
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Untitled
Abstract: No abstract text available
Text: IBM014405 IBM014405M IBM014405B IBM014405P 1 M x 4 10/10 EDO DRAM Features • 1,048,576 word by 4 bit organization • Low Power Dissipation - Active max - 95 mA / 80 mA (3.3V) - 85 mA / 70 mA (5.0V) • Power Supply: 3.3V ± 0.3V or 5.0V ± 0.5V • Extended Data Out (Hyper Page) Mode
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OCR Scan
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IBM014405
IBM014405M
IBM014405B
IBM014405P
27H6242
000300b
IBM014405
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