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Abstract: No abstract text available
Text: TK20S06K3L MOSFETs Silicon N-channel MOS U-MOS TK20S06K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.) (VGS = 10 V) (2)
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TK20S06K3L
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Text: TJ8S06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ8S06M3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 80 mΩ (typ.) (VGS = -10 V)
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TJ8S06M3L
AEC-Q101
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Abstract: No abstract text available
Text: TK90S06N1L MOSFETs Silicon N-channel MOS U-MOS-H TK90S06N1L 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.7 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
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TK90S06N1L
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Abstract: No abstract text available
Text: TK60S06K3L MOSFET シリコンNチャネルMOS形 U-MOS TK60S06K3L 1. 用途 • 車載用 • モータドライブ用 • DC-DCコンバータ用 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 6.4 mΩ (標準) (VGS = 10 V)
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TK60S06K3L
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Abstract: No abstract text available
Text: TJ50S06M3L MOSFET シリコンPチャネルMOS形 U-MOS TJ50S06M3L 1. 用途 • 車載用 • モータドライブ用 • DC-DCコンバータ用 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 10.3 mΩ (標準) (VGS = -10 V)
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TJ50S06M3L
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Text: TJ20S04M3L MOSFET シリコンPチャネルMOS形 U-MOS TJ20S04M3L 1. 用途 • 車載用 • モータドライブ用 • DC-DCコンバータ用 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 17 mΩ (標準) (VGS = -10 V)
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Text: TK8S06K3L MOSFET シリコンNチャネルMOS形 U-MOS TK8S06K3L 1. 用途 • 車載用 • モータドライブ用 • DC-DCコンバータ用 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 43 mΩ (標準) (VGS = 10 V)
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TK8S06K3L
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Abstract: No abstract text available
Text: TK15S04N1L MOSFETs Silicon N-channel MOS U-MOS-H TK15S04N1L 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 13.7 mΩ (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
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TK15S04N1L
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eaton el 198
Abstract: ITE circuit breakers "cross reference" WESTINGHOUSE motor life line westinghouse ITE circuit breakers wiring diagram STAR DELTA motor sequential starter Project Report of smoke alarm using IC 555 doc ITE/Gould relay j13 MTBF fit IGBT 1200 UNITROL 1000
Text: Electrical Sector Solutions Volume 3 Power Distribution and Control Assemblies Volume 3: Power Distribution and Control Assemblies Eaton Corporation Electrical Sector 1111 Superior Ave. Cleveland, OH 44114 United States 877-ETN-CARE 877-386-2273 Eaton.com
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877-ETN-CARE
CA08100004E
V3-T2-65
V3-T2-42â
V3-T2-52
V3-T2-39â
V3-T2-41
V3-T9-254
V3-T7-17
CA08100004Eâ
eaton el 198
ITE circuit breakers "cross reference"
WESTINGHOUSE motor life line
westinghouse
ITE circuit breakers
wiring diagram STAR DELTA motor sequential starter
Project Report of smoke alarm using IC 555 doc
ITE/Gould relay j13
MTBF fit IGBT 1200
UNITROL 1000
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MB 10F
Abstract: No abstract text available
Text: Mil Standard to Delevan Conversion Chart MS 14046 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 LT10K 128 129 130 131 132 133 134 135 136 137 MS 1537 18130 LT4K -30K 17 090 -32K 18 091 -34K 19 092 -36K 20 093 -38K 21 094 -40K 22 095 -42K 23 096 -44K 24 097 -47K 25 098 -51K 26
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LT10K
-333K
-393K
-473K
-563K
-683K
-823K
MB 10F
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Text: TK20S06K3L MOSFETs Silicon N-channel MOS U-MOS TK20S06K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.) (VGS = 10 V) (2)
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TK20S06K3L
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Untitled
Abstract: No abstract text available
Text: TK10S04K3L MOSFETs Silicon N-channel MOS U-MOS TK10S04K3L 1. Applications • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
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TK10S04K3L
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Text: TK80S06K3L MOSFETs Silicon N-channel MOS U-MOS TK80S06K3L 1. Applications • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
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TK80S06K3L
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Text: TJ10S04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ10S04M3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 33.8 mΩ (typ.) (VGS = -10 V) (2)
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Text: TK40S10K3Z MOSFETs Silicon N-channel MOS U-MOS TK40S10K3Z 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 14.4 mΩ (typ.) (VGS = 10 V)
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TK40S10K3Z
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Text: TJ30S06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ30S06M3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 16.8 mΩ (typ.) (VGS = -10 V)
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Text: TJ60S04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ60S04M3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) (VGS = -10 V)
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TJ60S04M3L
AEC-Q101
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Abstract: No abstract text available
Text: TK40S10K3Z MOSFETs Silicon N-channel MOS U-MOS TK40S10K3Z 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 14.4 mΩ (typ.) (VGS = 10 V)
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AEC-Q101
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Abstract: No abstract text available
Text: TK8S06K3L MOSFETs Silicon N-channel MOS U-MOS TK8S06K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 43 mΩ (typ.) (VGS = 10 V)
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TK8S06K3L
AEC-Q101
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Abstract: No abstract text available
Text: TK50S04K3L MOSFETs Silicon N-channel MOS U-MOS TK50S04K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ.) (VGS = 10 V)
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TK50S04K3L
AEC-Q101
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Abstract: No abstract text available
Text: TJ50S06M3L MOSFETs Silicon P-Channel MOS U-MOS TJ50S06M3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 10.3 mΩ (typ.) (VGS = -10 V)
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AEC-Q101
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photomultiplier
Abstract: dynode vk10k photomultiplier 8 stage Scans-0017376
Text: 2 7M 12 A EDISWAN 27MI2A NINE STAGE PHOTOMULTIPLIER G ENERAL The 27M12A is an improved version of the 27M12, having improved vibration performance. It is a nine stage photo multiplier for use in Aircraft, being especially resistant to shock and vibration. It has a blue sensitive caesium antimony
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27M12A
27MI2A
27M12A
27M12,
k10/Cathod
Vk10-k1
Va-k10
photomultiplier
dynode
vk10k
photomultiplier 8 stage
Scans-0017376
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photomultiplier
Abstract: photomultiplier 8 stage JT INDUSTRIES Scans-0017376
Text: 27M13 EDISWAN 27MI3 SEVEN STAGE PHOTO-MULTIPLIER G EN ERA L The 27M13 is a seven stage Photo-multiplier having a blue sensitive cathode and twin anodes. Its sensitivity in typical operation is 2.5 amps/lumen. The cathode surface is of •<Caesium Antimony.
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27M13
27MI3
27M13
photomultiplier
photomultiplier 8 stage
JT INDUSTRIES
Scans-0017376
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27M12
Abstract: dynode 27MI2 Scans-0017376
Text: 27 M12 E DISWAN 27MI2 NINE STAGE PHOTO-ELECTRIC MULTIPLIER G EN ER A L The 27M12 is a nine stage photo multiplier cell for use in aircraft, being especially resistant to shock and vibration. It has a blue sensitive caesium antimony coated cathode and is fitted with flying leads.
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27M12
27MI2
27M12
Va-k10
dynode
27MI2
Scans-0017376
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