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    27MHZ POWER AMPLIFIER Search Results

    27MHZ POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    27MHZ POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    27mhz rf amplifier

    Abstract: 27mhz rf ic NTE236 27mhz HF SSB APPLICATIONS 27mhz rf amplifier NPN transistor HF power amplifier 12v class d amplifier 20W 27mhz transistor
    Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)


    Original     		PDF NTE236 27MHz, NTE236 27MHz) 27MHz 27mhz rf amplifier 27mhz rf ic 27mhz HF SSB APPLICATIONS 27mhz rf amplifier NPN transistor HF power amplifier 12v class d amplifier 20W 27mhz transistor

    27mhz rf ic

    Abstract: 27mhz rf amplifier NPN transistor 27mhz rf amplifier NTE236 12v class d amplifier 20W 27mhz transistor 27MHz power amplifier
    Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)


    Original     		PDF NTE236 27MHz, NTE236 27MHz) 27MHz 27mhz rf ic 27mhz rf amplifier NPN transistor 27mhz rf amplifier 12v class d amplifier 20W 27mhz transistor 27MHz power amplifier

    Untitled

    Abstract: No abstract text available
    Text: LTC6601-2 Low Power, Low Distortion, 5MHz to 27MHz, Pin Configurable Filter/ADC Driver DESCRIPTION FEATURES n n n n n n n n n n Pin Configurable Gain and Filter Response Up to 27MHz Low Power: 16mA at 3V Low Distortion 2VP-P 1MHz: –96dBc 2nd, –112dBc 3rd


    Original     		PDF LTC6601-2 27MHz, 27MHz 96dBc 112dBc 10MHz: 65dBc 78dBc 20-Lead LTC6601-1

    Untitled

    Abstract: No abstract text available
    Text: MIC919 Micrel MIC919 27MHz Low-Power SOT-23-5/SC-70 Op Amp Final Information General Description Features The MIC919 is a high-speed operational amplifier with a gainbandwidth product of 27MHz. The part is unity gain stable. It has a very low 360µA supply current, and features the


    Original     		PDF MIC919 27MHz OT-23-5/SC-70 MIC919 27MHz. OT-23-5 SC-70

    Untitled

    Abstract: No abstract text available
    Text: MIC919 Micrel MIC919 27MHz Low-Power SOT-23-5/SC-70 Op Amp Final Information General Description Features The MIC919 is a high-speed operational amplifier with a gainbandwidth product of 27MHz. The part is unity gain stable. It has a very low 360µA supply current, and features the


    Original     		PDF MIC919 27MHz OT-23-5/SC-70 MIC919 27MHz. OT-23-5 SC-70

    MIC919

    Abstract: MIC919BC5 MIC919BM5 A31 SOT
    Text: MIC919 Micrel MIC919 27MHz Low-Power SOT-23-5/SC-70 Op Amp Preliminary Information General Description Features The MIC919 is a high-speed operational amplifier with a gainbandwidth product of 27MHz. The part is unity gain stable. It has a very low 360µA supply current, and features the


    Original     		PDF MIC919 27MHz OT-23-5/SC-70 MIC919 27MHz. OT-23-5 SC-70 MIC919BC5 MIC919BM5 A31 SOT

    MIC919

    Abstract: MIC919BC5 MIC919BM5 sr450
    Text: MIC919 Micrel MIC919 27MHz Low-Power SOT-23-5/SC-70 Op Amp Preliminary Information General Description Features The MIC919 is a high-speed operational amplifier with a gainbandwidth product of 27MHz. The part is unity gain stable. It has a very low 360µA supply current, and features the


    Original     		PDF MIC919 27MHz OT-23-5/SC-70 MIC919 27MHz. OT-23-5 MIC919BC5 MIC919BM5 sr450

    2sc2166

    Abstract: No abstract text available
    Text: Product Specification 2SC2166 Silicon NPN Power Transistor DESCRIPTION ・High Power Gain: Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V ・High Reliability APPLICATIONS ・Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications.


    Original     		PDF 2SC2166 27MHz, CH2SC2166 27MHz 2sc2166

    2SC1969

    Abstract: 2sc1969 transistor transistor 2sC1969 HF power amplifier f-27MHz 27mhz transistor 2sc196 12v power amplifiers 27mhz
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1969 DESCRIPTION •High Power Gain: Gpe≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for 10~14 watts output power class AB amplifiers applications in HF band.


    Original     		PDF 2SC1969 Gpe12dB 27MHz, 27MHz 2SC1969 2sc1969 transistor transistor 2sC1969 HF power amplifier f-27MHz 27mhz transistor 2sc196 12v power amplifiers 27mhz

    27MHz rf transmitter

    Abstract: 27mhz transmitter 27mhz transmitter circuit npn power transistor ic 400ma NTE282
    Text: NTE282 Silicon NPN Transistor Final RF Power Amp, Switch Applications: D HF Power Amplifiers, Switchings D 27MHz, 4W, AM, Citizens Band Transmitter Output Stage Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		PDF NTE282 27MHz, 400mA 100mA -15mA, -100mA 400mW, 27MHz 27MHz rf transmitter 27mhz transmitter 27mhz transmitter circuit npn power transistor ic 400ma NTE282

    27MHz rf transmitter

    Abstract: 27mhz transmitter circuit NTE282
    Text: NTE282 Silicon NPN Transistor Final RF Power Amp, Switch Applications: D HF Power Amplifiers, Switchings D 27MHz, 4W, AM, Citizens Band Transmitter Output Stage Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		PDF NTE282 27MHz, 400mA 100mA 400mW, 27MHz 27MHz rf transmitter 27mhz transmitter circuit NTE282

    27mhz rf amplifier

    Abstract: 27mhz rf ic 27mhz transistor "RF Power Amplifier" RF POWER TRANSISTOR NPN 27mhz rf amplifier NPN transistor 2SC2716
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2716 DESCRIPTION •High Power Gain: Gp≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for RF power amplifier applications. n c . i m e ABSOLUTE MAXIMUM RATINGS Ta=25℃


    Original     		PDF 2SC2716 Gp12dB 27MHz, 27MHz 27mhz rf amplifier 27mhz rf ic 27mhz transistor "RF Power Amplifier" RF POWER TRANSISTOR NPN 27mhz rf amplifier NPN transistor 2SC2716

    Untitled

    Abstract: No abstract text available
    Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB TO220AB Description: The NTE236 is a silicon NPN transistor in a TO220AB type package designed for 10−14 watt output power class AB amplifier applications in the HF band. Features:


    Original     		PDF NTE236 27MHz, O220AB NTE236 O220AB 27MHz

    2SC2078

    Abstract: 2sc2078 amplifier 2SC2078 Datasheet 2sc2078 Transistor NPN rf transistor RF POWER TRANSISTOR NPN 2sc2078 2sc207827mhz
    Text: Ordering number:EN462E NPN Epitaxial Planar Silicon Transistor 2SC2078 27MHz RF Power Amplifier Applications Package Dimensions unit:mm 2010C [2SC2078] 1 : Base 2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25˚C


    Original     		PDF EN462E 2SC2078 27MHz 2010C 2SC2078] O-220AB SC-46 2SC2078 2sc2078 amplifier 2SC2078 Datasheet 2sc2078 Transistor NPN rf transistor RF POWER TRANSISTOR NPN 2sc2078 2sc207827mhz

    27mhz transmitter

    Abstract: KTC2078 0.022uF 27mhz transmitter circuit ktc1006 toko 7ba 7BA-480k TOKO 27mhz KTC3191 27MHz ktc1006
    Text: SEMICONDUCTOR KTC2078 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR CB TRANSCEIVER TX FINAL AMPLIFIER APPLICATION. HF TRANSCEIVER APPLICATION. A R S E FEATURES F ᴌRecommended for Output Stage Application of P Q D B AM 4W Transmitter. ᴌHigh Power Gain.


    Original     		PDF KTC2078 27MHz 150mV 27mhz transmitter KTC2078 0.022uF 27mhz transmitter circuit ktc1006 toko 7ba 7BA-480k TOKO 27mhz KTC3191 27MHz ktc1006

    NTE195A

    Abstract: 27mhz rf amplifier NPN transistor Common emitter amplifier 27mhz transistor
    Text: NTE195A Silicon NPN Transistor RF Power Amp/Driver, CB Description: The NTE195A is designed primarily for use in large–signal output amplifier stages. Intended for use in Citizen–Band communications equipment operating to 30MHz. High breakdown voltages allow a


    Original     		PDF NTE195A NTE195A 30MHz. 28MHz 70Vtnce 27MHz 25Vdc 27mhz rf amplifier NPN transistor Common emitter amplifier 27mhz transistor

    27mhz rf amplifier

    Abstract: NTE329 27mhz rf amplifier NPN transistor 27mhz rf ic 27mhz transistor 27MHz power amplifier
    Text: NTE329 Silicon NPN Transistor RF Power Amp, CB Description: The NTE329 is designed primarily for use in large–signal output amplifier stages. Intended for use in Citizen–Band communications equipment operating to 30MHz. High breakdown voltages allow a


    Original     		PDF NTE329 NTE329 30MHz. 28MHz 27MHz 25Vdc 27mhz rf amplifier 27mhz rf amplifier NPN transistor 27mhz rf ic 27mhz transistor 27MHz power amplifier

    "Lowpass Filter"

    Abstract: lowpass filter CIRCUIT DIAGRAM LTC6601-2 27MHZ DC1251 RG4 wiring diagram ADC1251
    Text: DEMO CIRCUIT 1251 QUICK START GUIDE LTC6601-1, LTC6601-2 5MHz to 27MHz, Pin Configurable, Fully Differential, 2nd Order Lowpass Filter DESCRIPTION Demonstration Circuit DC1251A features the LTC6601-X series family of pin configurable, fully differential, 2nd order lowpass filter and amplifier.


    Original     		PDF LTC6601-1, LTC6601-2 27MHz, DC1251A LTC6601-X DC1251A-A LTC6601-1 DC1251A-B LTC6601-2. "Lowpass Filter" lowpass filter CIRCUIT DIAGRAM LTC6601-2 27MHZ DC1251 RG4 wiring diagram ADC1251

    2SC2312

    Abstract: 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb
    Text: MITSUBISHI SILICON TRANSISTOR RF POWER TRANSISTOR' 2SC2312 27MHz,12V, 17W NPN Epitaxial •MITSUBISHI ELECTRIC CORP. Planar Type GENERAL DISCRIPTION ' MITSUBISHI 2SC2312 is a silicon NPN epitaxial planar type transistor specifically designed for linear amplifiers operating


    OCR Scan     		PDF 2SC2312 27MHz 27MHz, -30dB -62dB -65dB. 2SC2312 100mA 27mhz transistor 27mhz rf ic A7 NPN EPITAXIAL A7 transistor transistor A7 RF POWER TRANSISTOR npn epitaxial planar high voltage transistor FET Transistor Structure mitsubishi vcb

    27mhz rf ic

    Abstract: 2SC1944 T30 transistor 27mhz transistor 27mhz rf amplifier T-30
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor Dimension in mm designed for RF power amplifiers on HF bandmobile radio applications. FEATURES • High power gain : Gpe S 11 dB, @ Vcc = 12V, f = 27MHz,


    OCR Scan     		PDF 2SC1944 2SC1944 27MHz, T0-220 27MHz 27mhz rf ic T30 transistor 27mhz transistor 27mhz rf amplifier T-30

    2SC781

    Abstract: 27mhz transistor TA-251C 251C 2SC78X
    Text: 2SC781 2SC781 NPN I t 7 i v 7 U 3 V h ^ V v X ^ /N P N SILICON EPITAXIAL TRANSISTOR 27MHz ^ h "7 V ' > “- / \ ^ i l ’tti^ jffl/T ra n s c e iv e r Power Output ft ^/FEATURES •2SC78X 27MHz CB K S g L S f o $ tz W £ < D tz i6 A M % m £ f< v n ffi< D m M i


    OCR Scan     		PDF 2SC781 27MHz 2SC78X 2SC781 27MHz, 800mW TC-25Â O-205MD 27mhz transistor TA-251C 251C

    2SC2075

    Abstract: 2SC207S 27mhz rc circuit 2SC2075A
    Text: SILICON NPN EPITAXIAL T Y P E 2SC2075 27MHz POWER AMPLIFIER APPLICATIONS. Unit in mm 03.6±O .2 FEATURES : 31n '0 • Recommended for Output Stage Application of AM 4W Transmitter. & • High Power Gain. • Wide Area of Safe Operation. MAXIMUM RATINGS Ta=25°C


    OCR Scan     		PDF 2SC2075 27MHz 2SC207S 2SC2075 2SC207S 27mhz rc circuit 2SC2075A

    NTE130

    Abstract: NTE199 NPN RF Amplifier NTE241
    Text: BI-POLAR TRANSISTORS Olag. No. •c 0VCBO BVceo BV ebo hFE Pd •t RF Pwr Amp/Driver, CB P0 = 3.5W Min, 27MHz, 12.5V T 039 21a 1.5 70 70 (CEFt) 4 30 Min 8 150 NPN-Si Audio Power Output & Medium Power Switching (Compì to NTE 197) T0220 11 a 7 90 80 (CER)


    OCR Scan     		PDF 27MHz, NTE234) NTE211) NTE210) T0220 T0220 NTE130 NTE199 NPN RF Amplifier NTE241

    IC 7473

    Abstract: CI 7473 2SC2075 7E50 AC75 27MHz rf transmitter 55vl 03a a03
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DE 1^0^7250 00D7470 3 f~ Tb <DI S C R E T E / O P T O S IL IC O N NPN E P IT A X IA L TYPE P C I PROCESS) 56C 07470 p 7 - 3 3 - 0 7 2SC2075 _ Unit in mm 27MHz POWER AMPLIFIER APPLICATIONS. FEATURES : • Recommended for Output Stage Application of


    OCR Scan     		PDF 00D7470 2SC2075 27MHz -55VL50 37MHz 150mV -60----I- 111II IC 7473 CI 7473 2SC2075 7E50 AC75 27MHz rf transmitter 55vl 03a a03