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    27MHZ RF AMPLIFIER NPN TRANSISTOR Search Results

    27MHZ RF AMPLIFIER NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    27MHZ RF AMPLIFIER NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB TO220AB Description: The NTE236 is a silicon NPN transistor in a TO220AB type package designed for 10−14 watt output power class AB amplifier applications in the HF band. Features:


    Original     		PDF NTE236 27MHz, O220AB NTE236 O220AB 27MHz

    2SC2078

    Abstract: 2sc2078 amplifier 2SC2078 Datasheet 2sc2078 Transistor NPN rf transistor RF POWER TRANSISTOR NPN 2sc2078 2sc207827mhz
    Text: Ordering number:EN462E NPN Epitaxial Planar Silicon Transistor 2SC2078 27MHz RF Power Amplifier Applications Package Dimensions unit:mm 2010C [2SC2078] 1 : Base 2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25˚C


    Original     		PDF EN462E 2SC2078 27MHz 2010C 2SC2078] O-220AB SC-46 2SC2078 2sc2078 amplifier 2SC2078 Datasheet 2sc2078 Transistor NPN rf transistor RF POWER TRANSISTOR NPN 2sc2078 2sc207827mhz

    27mhz rf amplifier

    Abstract: 27mhz rf ic 27mhz transistor "RF Power Amplifier" RF POWER TRANSISTOR NPN 27mhz rf amplifier NPN transistor 2SC2716
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2716 DESCRIPTION •High Power Gain: Gp≥12dB,f= 27MHz, PO= 16W ·High Reliability APPLICATIONS ·Designed for RF power amplifier applications. n c . i m e ABSOLUTE MAXIMUM RATINGS Ta=25℃


    Original     		PDF 2SC2716 Gp12dB 27MHz, 27MHz 27mhz rf amplifier 27mhz rf ic 27mhz transistor "RF Power Amplifier" RF POWER TRANSISTOR NPN 27mhz rf amplifier NPN transistor 2SC2716

    27mhz rf amplifier NPN transistor to220

    Abstract: 2SC2078 RF POWER TRANSISTOR NPN 2sc2078 2sc2078 amplifier 2sc2078 Transistor 27mhz rf amplifier 27mhz rf amplifier NPN transistor ITR05108 ITR05109 ITR05110
    Text: Ordering number:ENN462E NPN Epitaxial Planar Silicon Transistor 2SC2078 27MHz RF Power Amplifier Applications Package Dimensions unit:mm 2010C [2SC2078] 10.2 3.6 4.5 5.1 18.0 15.1 6.3 2.7 1.3 14.0 5.6 1.2 0.8 2 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220


    Original     		PDF ENN462E 2SC2078 27MHz 2010C 2SC2078] O-220 27mhz rf amplifier NPN transistor to220 2SC2078 RF POWER TRANSISTOR NPN 2sc2078 2sc2078 amplifier 2sc2078 Transistor 27mhz rf amplifier 27mhz rf amplifier NPN transistor ITR05108 ITR05109 ITR05110

    27mhz rf amplifier

    Abstract: NTE329 27mhz rf amplifier NPN transistor 27mhz rf ic 27mhz transistor 27MHz power amplifier
    Text: NTE329 Silicon NPN Transistor RF Power Amp, CB Description: The NTE329 is designed primarily for use in large–signal output amplifier stages. Intended for use in Citizen–Band communications equipment operating to 30MHz. High breakdown voltages allow a


    Original     		PDF NTE329 NTE329 30MHz. 28MHz 27MHz 25Vdc 27mhz rf amplifier 27mhz rf amplifier NPN transistor 27mhz rf ic 27mhz transistor 27MHz power amplifier

    27mhz rf amplifier

    Abstract: 27mhz rf ic NTE236 27mhz HF SSB APPLICATIONS 27mhz rf amplifier NPN transistor HF power amplifier 12v class d amplifier 20W 27mhz transistor
    Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)


    Original     		PDF NTE236 27MHz, NTE236 27MHz) 27MHz 27mhz rf amplifier 27mhz rf ic 27mhz HF SSB APPLICATIONS 27mhz rf amplifier NPN transistor HF power amplifier 12v class d amplifier 20W 27mhz transistor

    27mhz rf ic

    Abstract: 27mhz rf amplifier NPN transistor 27mhz rf amplifier NTE236 12v class d amplifier 20W 27mhz transistor 27MHz power amplifier
    Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz)


    Original     		PDF NTE236 27MHz, NTE236 27MHz) 27MHz 27mhz rf ic 27mhz rf amplifier NPN transistor 27mhz rf amplifier 12v class d amplifier 20W 27mhz transistor 27MHz power amplifier

    NTE322

    Abstract: 27mhz rf amplifier NPN transistor choke 380
    Text: NTE322 Silicon NPN Transistor RF Power Output Description: The NTE322 is a silicon NPN RF power transistor in a TO202N type package designed for use in Citizen–Band and other high–frequency communications equipment operating to 30MHz. Higher breakdown voltages allow a high percentage of up–modulation in AM circuits.


    Original     		PDF NTE322 NTE322 O202N 30MHz. 500mA 27MHz 180pF 65/3B 27mhz rf amplifier NPN transistor choke 380

    NTE195A

    Abstract: 27mhz rf amplifier NPN transistor Common emitter amplifier 27mhz transistor
    Text: NTE195A Silicon NPN Transistor RF Power Amp/Driver, CB Description: The NTE195A is designed primarily for use in large–signal output amplifier stages. Intended for use in Citizen–Band communications equipment operating to 30MHz. High breakdown voltages allow a


    Original     		PDF NTE195A NTE195A 30MHz. 28MHz 70Vtnce 27MHz 25Vdc 27mhz rf amplifier NPN transistor Common emitter amplifier 27mhz transistor

    RF POWER TRANSISTOR NPN 2sc2078

    Abstract: 2SC2078 2sc2078 Transistor 27mhz rf ic 27mhz rf amplifier 2sc2078 amplifier RF POWER TRANSISTOR NPN 27mhz rf amplifier NPN transistor 2sc2078 datasheet 27mhz transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2078 DESCRIPTION •Collector-Emitter Voltage:VCER= 75V Min ;RBE=150Ω ·Collector Current:IC=3A APPLICATIONS ·27MHz RF Power Amplifier Applications n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


    Original     		PDF 2SC2078 27MHz 500mA 500mA; 27MHz RF POWER TRANSISTOR NPN 2sc2078 2SC2078 2sc2078 Transistor 27mhz rf ic 27mhz rf amplifier 2sc2078 amplifier RF POWER TRANSISTOR NPN 27mhz rf amplifier NPN transistor 2sc2078 datasheet 27mhz transistor

    2SC2078

    Abstract: 2sc2078 amplifier 2SC2078 Datasheet 2SC-2078 27mhz rf amplifier 2sc2078 capacitance
    Text: SavantIC Semiconductor Product Specification 2SC2078 Silicon NPN Power Transistors DESCRIPTION With TO-220 package •Low collector saturation voltage ·Wit APPLICATIONS ·27MHz RF power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		PDF 2SC2078 O-220 27MHz 2SC2078 2sc2078 amplifier 2SC2078 Datasheet 2SC-2078 27mhz rf amplifier 2sc2078 capacitance

    2SC1678

    Abstract: 27mhz rf ic 27mhz rf amplifier 2sc1678 datasheet
    Text: Inchange Semiconductor Product Specification 2SC1678 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage APPLICATIONS ·27MHz RF power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		PDF 2SC1678 O-220 27MHz O-220) 2SC1678 27mhz rf ic 27mhz rf amplifier 2sc1678 datasheet

    2SC1678

    Abstract: 27mhz rf amplifier 2sc1678 datasheet
    Text: SavantIC Semiconductor Product Specification 2SC1678 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage APPLICATIONS ·27MHz RF power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		PDF 2SC1678 O-220 27MHz O-220) 2SC1678 27mhz rf amplifier 2sc1678 datasheet

    27mhz rf amplifier NPN transistor to220

    Abstract: TO220 RF POWER TRANSISTOR NPN NTE235
    Text: NTE235 Silicon NPN Transistor Final RF Power Output Description: The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment. Absolute Maximum Ratings: TA = +25°C unless otherwise specified


    Original     		PDF NTE235 NTE235 500mA 100mA 27MHz 27mhz rf amplifier NPN transistor to220 TO220 RF POWER TRANSISTOR NPN

    RF toy plane circuit diagram

    Abstract: 27mhz, 40mhz toys PT8R2012W AM radio receiver
    Text: Data Sheet PT8R2012 Super-Heterodyne AM Radio Receiver |


    Original     		PDF PT8R2012 455kHz PT0218 RF toy plane circuit diagram 27mhz, 40mhz toys PT8R2012W AM radio receiver

    stm 601 stepper motor

    Abstract: adp3420 schematic weigh scale AD7730 SSM2024 ad698 AD774 SSM2164 adm3207 LVDT Signal Conditioner CIRCUIT WITH AD698 AND OP SSM2018
    Text: ANALOG DEVICES CD REFERENCE PART DESCRIPTION 1B21 TRANSMITTER, LOCALLY POWERED, INTERNAL LOOP SUPPLY, 4 to 20 mA OUTPUT, CALIBRATED 2/10V RANGES, ACCURACY=0.05% TRANSMITTER, LOOP POWERED, ISOLATED 1500VRMS, PIN PROGRAMMABLE ,0/4 to 20 mA, ACCURACY=0.05% 1B22


    Original     		PDF 2/10V 1500VRMS, 100dB, 160dB, AD246 AD204, AD574A AD570 100ohm 600uA stm 601 stepper motor adp3420 schematic weigh scale AD7730 SSM2024 ad698 AD774 SSM2164 adm3207 LVDT Signal Conditioner CIRCUIT WITH AD698 AND OP SSM2018

    Untitled

    Abstract: No abstract text available
    Text: LTC6405 2.7GHz, 5V, Low Noise, Rail-to-Rail Input Differential Amplifier/Driver Features Description Low Noise: 1.6nV/√Hz RTI n Low Power: 18mA at 5V n Low Distortion HD2/HD3 : –82dBc/–65dBc at 50MHz, 2VP-P –97dBc/–91dBc at 25MHz, 2VP-P n Rail-to-Rail Differential Input


    Original     		PDF LTC6405 82dBc/ 65dBc 50MHz, 97dBc/ 91dBc 25MHz, n800MHz 16-Lead

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


    Original     		PDF SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853

    RF7200

    Abstract: LTC6405UD
    Text: LTC6405 2.7GHz, 5V, Low Noise, Rail-to-Rail Input Differential Amplifier/Driver FEATURES DESCRIPTION n The LTC 6405 is a very low noise, low distortion, fully differential input/output amplifier optimized for 5V, single supply operation. The LTC6405 input common mode range


    Original     		PDF LTC6405 12-bit 16-bit 50MHz 800MHz. LT6600-10/LT6600-20 LTC6403-1 RF7200 LTC6405UD

    6405F

    Abstract: RF7200
    Text: LTC6405 2.7GHz, 5V, Low Noise, Rail-to-Rail Input Differential Amplifier/Driver FEATURES DESCRIPTION n The LTC 6405 is a very low noise, low distortion, fully differential input/output amplifier optimized for 5V, single supply operation. The LTC6405 input common mode range


    Original     		PDF LTC6405 12-bit 16-bit 50MHz 800MHz. 10MHz LTC6404-1/ 6405F RF7200

    Untitled

    Abstract: No abstract text available
    Text: LTC6405 2.7GHz, 5V, Low Noise, Rail-to-Rail Input Differential Amplifier/Driver FEATURES n n n n n n n n n n n DESCRIPTION Low Noise: 1.6nV/√Hz RTI Low Power: 18mA at 5V Low Distortion HD2/HD3 : –82dBc/–65dBc at 50MHz, 2VP-P –97dBc/–91dBc at 25MHz, 2VP-P


    Original     		PDF LTC6405 82dBc/â 65dBc 50MHz, 97dBc/â 91dBc 25MHz, 800MHz 16-Lead 70dBc

    NTE130

    Abstract: 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211
    Text: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts BV ebo " fe Pd *T 4 30 Min 8 150 80 (CER) 5 20 Min 50* 1.8 4 80 (CER) 5 20 Min 50* 4 Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) 'c 1.5 BVcbo BVceo 70 70 (CER)


    OCR Scan     		PDF 27MHz, NTE197) T0220 NTE196) 27MHz) T039HS NTE130 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211

    NTE130

    Abstract: NTE199 NPN RF Amplifier NTE241
    Text: BI-POLAR TRANSISTORS Olag. No. •c 0VCBO BVceo BV ebo hFE Pd •t RF Pwr Amp/Driver, CB P0 = 3.5W Min, 27MHz, 12.5V T 039 21a 1.5 70 70 (CEFt) 4 30 Min 8 150 NPN-Si Audio Power Output & Medium Power Switching (Compì to NTE 197) T0220 11 a 7 90 80 (CER)


    OCR Scan     		PDF 27MHz, NTE234) NTE211) NTE210) T0220 T0220 NTE130 NTE199 NPN RF Amplifier NTE241

    nte280

    Abstract: nte291
    Text: BI-POL AR TRANSISTORS NTE Type Number Polarity and Material Description and Application 275 PNP-Si 278 NPN-Si 280 NPN-Si 280MP NPN-Si PNP-Si Darlington Pwr Amp Switch Compl to NTE274 Broad Band RF Amp, CATV/MATV Amp Audio Amp Output (Compl to NTE281) Matched Pair of NTE280


    OCR Scan     		PDF 280MP NTE274) NTE281) NTE280 284MP 281MCP NTE291) 292MCP NTE292 NTE291 nte280 nte291