FQP11N40
Abstract: No abstract text available
Text: QFET N-CHANNEL FQP11N40 FEATURES BVDSS = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 27nC Typ. • Extended Safe Operating Area
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FQP11N40
O-220
FQP11N40
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SFD30N06
Abstract: No abstract text available
Text: PRELIMINARY SFD30N06 SemiWell Semiconductor N-Channel MOSFET Features Symbol • Low RDS on (0.04Ω )@VGS=10V ■ Gate Charge (Typical 27nC) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ { 2. Drain
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SFD30N06
SFD30N06
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Untitled
Abstract: No abstract text available
Text: FDB2572 / FDP2572 N-Channel UltraFET Trench MOSFET 150V, 29A, 56mΩ Features Applications • r DS ON = 45mΩ (Typ.), VGS = 10V, ID = 9A • DC/DC converters and Off-Line UPS • Qg(tot) = 27nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB2572
FDP2572
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Untitled
Abstract: No abstract text available
Text: SUN1060F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =0.6Ω (Typ.) Low gate charge: Qg=27nC (Typ.) Low reverse transfer capacitance: Crss=4.9pF (Typ.) RoHS compliant device
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SUN1060F
SUN1060
O-220F-3L
SDB20D45
03-DEC-13
KSD-T0O129-000
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SFP30N06
Abstract: No abstract text available
Text: PRELIMINARY SFP30N06 SemiWell Semiconductor N-Channel MOSFET Features Symbol • Low RDS on (0.04Ω )@VGS=10V ■ Low Gate Charge (Typical 27nC) Low Crss (Typical 75pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C)
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SFP30N06
O-220
SFP30N06
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQAF11N40 FEATURES BVDSS = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 27nC Typ. •
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FQAF11N40
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQA11N40 FEATURES BVDSS = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 27nC Typ. • Extended Safe Operating Area
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FQA11N40
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15E tube
Abstract: FDD2572 FDU2572 M063 KP25
Text: FDD2572 / FDU2572 N-Channel UltraFET Trench MOSFET 150V, 29A, 54mΩ Features Applications • r DS ON = 45mΩ (Typ.), VGS = 10V, ID = 9A • DC/DC converters and Off-Line UPS • Qg(tot) = 27nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDD2572
FDU2572
O-252AA
O-251AA
15E tube
FDU2572
M063
KP25
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25OT
Abstract: FQA11N40
Text: QFET N-CHANNEL FQA11N40 FEATURES BVqss = 400V Advanced New Design R d S O N Avalanche Rugged Technology = 0.48Î2 lD = 11.8A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 27nC (Typ.)
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FQA11N40
25OT
FQA11N40
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FDB2572
Abstract: FDP2572
Text: FDB2572 / FDP2572 N-Channel UltraFET Trench MOSFET 150V, 29A, 54mΩ Features Applications • r DS ON = 45mΩ (Typ.), VGS = 10V, ID = 9A • DC/DC converters and Off-Line UPS • Qg(tot) = 27nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDB2572
FDP2572
O-220AB
O-263AB
FDP2572
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SFP30N06
Abstract: No abstract text available
Text: SFP30N06 SemiWell Semiconductor N-Channel MOSFET Features Symbol • Low RDS on (0.04Ω )@VGS=10V ■ Low Gate Charge (Typical 27nC) Low Crss (Typical 75pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C) ■ ■
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SFP30N06
O-220
SFP30N06
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB11N40, FQI11N40 FEATURES BV qss = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 27nC Typ.
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FQB11N40,
FQI11N40
D2PAK/TO-263
D2PAK/TO-263
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQAF11N40 FEATURES BV qss = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 27nC Typ. •
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FQAF11N40
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diode SM 88A
Abstract: FQAF11N40
Text: QFET N-CHANNEL FQAF11N40 FEATURES BVqss = 400V Advanced New Design R d S O N Avalanche Rugged Technology = 0.48Î2 lD = 8.8A Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 27nC (Typ.)
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FQAF11N40
diode SM 88A
FQAF11N40
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Untitled
Abstract: No abstract text available
Text: SUN1060I2 New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =0.6Ω (Typ.) • Low gate charge: Qg=27nC (Typ.) • Low reverse transfer capacitance: Crss=4.9pF (Typ.) • RoHS compliant device
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SUN1060I2
SUN1060
03-DEC-13
KSD-T0W002-000
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQPF11N40 FEATURES BVDSS = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 27nC Typ. •
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FQPF11N40
O-220F
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Untitled
Abstract: No abstract text available
Text: QFET N-CHANNEL FQB11N40, FQI11N40 FEATURES BVDSS = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 27nC Typ.
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FQB11N40,
FQI11N40
FQB11N40
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SFD30N06
Abstract: No abstract text available
Text: SFD30N06 SemiWell Semiconductor N-Channel MOSFET Features Symbol • Low RDS on (0.04Ω )@VGS=10V ■ Gate Charge (Typical 27nC) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ { 2. Drain ● 1. Gate
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SFD30N06
O-252)
SFD30N06
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LF114a
Abstract: No abstract text available
Text: QFET N-CHANNEL FQA11N40 FEATURES BV qss = 400V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 27nC Typ. •
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FQA11N40
LF114a
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mathcad SEPIC
Abstract: Input voltage 40V Output voltage 13.8V mathcad forward converter design SNVS480E mathcad INDUCTOR DESIGN LM5022 Low Side Controller for Boost and SEPIC si4850 SLF12575T-M3R2
Text: LM5022 LM5022 60V Low Side Controller for Boost and SEPIC Literature Number: SNVS480E LM5022 60V Low Side Controller for Boost and SEPIC General Description Features The LM5022 is a high voltage low-side N-channel MOSFET controller ideal for use in boost and SEPIC regulators. It contains all of the features needed to implement single ended
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LM5022
LM5022
SNVS480E
mathcad SEPIC
Input voltage 40V Output voltage 13.8V
mathcad forward converter design
SNVS480E
mathcad INDUCTOR DESIGN
Low Side Controller for Boost and SEPIC
si4850
SLF12575T-M3R2
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Untitled
Abstract: No abstract text available
Text: PD - 97274C IRF6716MPbF IRF6716MTRPbF DirectFET Power MOSFET Typical values unless otherwise specified l RoHs Compliant and Halogen Free VDSS l Low Profile (<0.6 mm) VGS l Dual Sided Cooling Compatible 25V max ±20V max l Ultra Low Package Inductance
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97274C
IRF6716MPbF
IRF6716MTRPbF
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5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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FDS6670AS
Abstract: FDS6670A
Text: FDS6670AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDS6670AS
FDS6670AS
FDS6670A
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high voltage mosfet, to-220 case
Abstract: No abstract text available
Text: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDP6644S/FDB6644S
FDP6644S
FDP6644S/FDB6644S
FDP6644/FDB6644
high voltage mosfet, to-220 case
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