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    2800 IR Search Results

    2800 IR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPA2800T1L-E1-AY Renesas Electronics Corporation Switching N-Channel Power MOSFET, HVSON, /Embossed Tape Visit Renesas Electronics Corporation
    2SK2800-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 40A 20Mohm To-220Ab Visit Renesas Electronics Corporation
    ISL28006FH20Z-T7 Renesas Electronics Corporation Micropower, Rail to Rail Input Current Sense Amplifier with Voltage Output Visit Renesas Electronics Corporation
    ISL28006FH20Z-T7A Renesas Electronics Corporation Micropower, Rail to Rail Input Current Sense Amplifier with Voltage Output Visit Renesas Electronics Corporation
    ISL28005FH-20EVAL1Z Renesas Electronics Corporation Micropower, Rail-to-Rail Input, Fixed Gain Current Sense Amp Evaluation Boards Visit Renesas Electronics Corporation

    2800 IR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hirect

    Abstract: H1450CHXX thyristor phase control rectifier 2596 Phase Control Thyristor EG28 specification of reverse conducting thyristor 820C control thyristor thyristor vrrm 1800
    Text: PHASE CONTROL THYRISTOR H1450CHXX Symbol Characteristics Conditions TJ 0C Value Unit 125 200-2800 V 125 200-2800 V 125 125 70 70 mA mA 1450 A 2280 A 30 kA 4500 kA2S BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive


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    PDF H1450CHXX June-2008 Hirect H1450CHXX thyristor phase control rectifier 2596 Phase Control Thyristor EG28 specification of reverse conducting thyristor 820C control thyristor thyristor vrrm 1800

    IR 10e

    Abstract: 1N5711 spice 1N5711 1N5712 spice 1n5711 equivalent 5082-2826 F 5082 1N5712 IN5712 RS-296-D
    Text: Agilent 1N5711, 1N5712, 5082-2300 Series, 5082-2800 Series, 5082-2900 Schottky Barrier Diodes for General Purpose Applications Data Sheet Features Description/Applications The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes which use a


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    PDF 1N5711, 1N5712, 5082-28xx/ 1N57xx 5968-7181E 5989-3338EN IR 10e 1N5711 spice 1N5711 1N5712 spice 1n5711 equivalent 5082-2826 F 5082 1N5712 IN5712 RS-296-D

    circulator MHz

    Abstract: No abstract text available
    Text: JXWBHX-T-2200-2800-20-0.32 2.2-2.8GHz Coaxial Circulator Test report is for reference only. TEST REPORT For JXWBHX-T-2200-2800-20-0.32 American Accurate Components, Inc. 1 188 Technology Drive, Unit H, Irvine, CA 92618 Tel: 949-453-9888 Š Fax: 949-453-8889 Š Email: sales@aacix.com


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    PDF JXWBHX-T-2200-2800-20-0 circulator MHz

    diode 5082-2800

    Abstract: 50822800
    Text: 5082-2800 SCHOTTKY BARRIER DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI 5082-2800 is a Silicon Small Signal Schottky Diode Designed for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS I 35 mA V 70 V PDISS


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    diode 5082-2800

    Abstract: diode 5082-2800 datasheet UHF/VHF
    Text: 5082-2800 SCHOTTKY BARRIER DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI 5082-2800 is a Silicon Small Signal Schottky Diode Designed for General Purpose UHF/VHF Detection and Pulse Applications. Color Band Indicates Cathode. MAXIMUM RATINGS I 35 mA V 70 V PDISS


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    D-68623

    Abstract: HTZ170C2K ZC 2800 diode rectifier
    Text: HTZ170C Series IF AV = 10 A VRRM = 2800 V HTZ170C2.8K HTZ170C2.4K HTZ170C2K Electronic Devices Minimum Avalanche Voltage V(BR)R Repetitive Peak Type Number LARONTROL High Voltage Diode Rectifier Module 2800 2400 2000 3000 2600 2200 CIRCUIT DIAGRAM -V R R M _


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    PDF HTZ170C HTZ170C2 HTZ170C2K D-68623 HTZ170C2K ZC 2800 diode rectifier

    1N5712

    Abstract: 5082-2800 5082-2826 RS-296-D 1N5711 5082-2080 5082-2805 1N5712 spice
    Text: Products > RF ICs/Discretes > Schottky Diodes > Axial Glass Packaged > 5082-2800 5082-2800 High breakdown general purpose Schottky diode All Detail Documents Description Lifecycle status: Active Features The 5082-28xx family are passivated Schottky barrier diodes which use a patented guard-ring


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    PDF 5082-28xx 1N5711, 1N5712, 5082-xxxx 5082xxxx 1N5712 T25/1N57xx 1N5712 5082-2800 5082-2826 RS-296-D 1N5711 5082-2080 5082-2805 1N5712 spice

    HSMS-2850-BLK

    Abstract: HSMS-2802-BLK MSA-1105 HSMS-2822-TR1 IAM-81008-STR HSMS-2812BLK IAM-82008 HSMS-2824-BLK HSMS-2805-BLK HSMS-2850
    Text: A g i l e n t Technologies Microwave Diodes, Integrated Circuits, GaAs FETs, Amplifiers and Mixers Diodes continued Please reference artwork on previous page. Surface Mount RF Schottky Barrier Diodes Mfr.Õs Type Bulk Tape and Reel 5082-2800 HSMS-2800-BLK


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    PDF HSMS-2829-BLK HSMS-2800-BLK HSMS-2802-BLK HSMS-2802-TR1 INA-03184-BLK IAM-82008-STR IAM-81008-STR HSMS-2850-BLK MSA-1105 HSMS-2822-TR1 HSMS-2812BLK IAM-82008 HSMS-2824-BLK HSMS-2805-BLK HSMS-2850

    diode t25 13 Go

    Abstract: 1N5712 DIODE T25 1N5712 spice DIODE T25 4 1N5711 spice 1n5711 5082-XXXX 1n5711 equivalent AVAGO 5082-2811
    Text: 1N5711, 1N5712, 5082-2800 Series Schottky Barrier Diodes for General Purpose Applications Data Sheet Description/Applications Features The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high break­down voltage. Packaged in


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    PDF 1N5711, 1N5712, 1N5712 5082-28xx T25/1N57xx 1N57xx 5082-28xx/ diode t25 13 Go 1N5712 DIODE T25 1N5712 spice DIODE T25 4 1N5711 spice 1n5711 5082-XXXX 1n5711 equivalent AVAGO 5082-2811

    Analog devices assembly code marking Information

    Abstract: marking 52 sot363 MARKING CODE 52 sot363 diode SOT-143 Marking Code A5 sot143 marking code A3 marking A5 sot363 marking code E5 sot23 6 pin marking code e5 sot363 Analog devices code marking AB marking code a5 sot363
    Text: Products > RF ICs/Discretes > Schottky Diodes > Surface Mount > HSMS-2800 HSMS-2800 Low reverse leakage Schottky diode Description Lifecycle status: Active Features General purpose Schottky diode in a broad range of package configurations. Optimised for High voltage clamp or analog DC switch applications. For low breakdown applciations, like


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    PDF HSMS-2800 HSMS-282X. HSMS-281X. HSMS-280x OT-23, OT-143 OT-363 Analog devices assembly code marking Information marking 52 sot363 MARKING CODE 52 sot363 diode SOT-143 Marking Code A5 sot143 marking code A3 marking A5 sot363 marking code E5 sot23 6 pin marking code e5 sot363 Analog devices code marking AB marking code a5 sot363

    E72873

    Abstract: No abstract text available
    Text: MDD 175 High Power Diode Modules IFRMS = 2x 564 A IFAVM = 2x 177 A VRRM = 2800-3400 V Preliminary data VRSM V 2900 3500 VRRM V 2800 3400 3 Type 1 3 2 2 MDD 175-28N1 MDD 175-34N1 1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;


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    PDF 00-3400V 175-28N1 175-34N1 E72873 20091110d E72873

    ZY 180L

    Abstract: ZY 20-12 diode zy MCC MDD IXYS
    Text: MDD 175 High Power Diode Modules IFRMS = 2x 564 A IFAVM = 2x 177 A VRRM = 2800-3400 V Preliminary data VRSM V 2900 3500 VRRM V 2800 3400 3 Type 1 2 MDD 175-28N1 MDD 175-34N1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C; VR = 0


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    PDF 175-28N1 175-34N1 800-3400V E72873 Isolat0747 20121206e ZY 180L ZY 20-12 diode zy MCC MDD IXYS

    ixys mdd

    Abstract: No abstract text available
    Text: MDD 175 IFRMS = 2x 564 A IFAVM = 2x 177 A VRRM = 2800-3400 V High Power Diode Modules Preliminary data VRSM V 2900 3500 VRRM V 2800 3400 3 Type 1 3 2 2 MDD 175-28N1 MDD 175-34N1 1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;


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    PDF 175-28N1 175-34N1 E72873 20091110d ixys mdd

    MCC255

    Abstract: No abstract text available
    Text: MDD 175 High Power Diode Modules IFRSM = 2x 450 A IFAVM = 2x 175 A VRRM = 2800-3400 V Preliminary data VRSM VDSM VRRM VDRM V 2900 3500 V 2800 3400 3 1 Type MDD 175-28N1 MDD 175-34N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM TC = 100°C; 180° sine IFSM TVJ = 45°C;


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    PDF 00-3400V 175-28N1 175-34N1 20080313a MCC255

    sphhr102tk

    Abstract: No abstract text available
    Text: CERAMIC CAPACITORS High Energy Corporation, 2008 High Voltage High Current High Frequency Sales@HighEnergyCorp.com 610 593-2800 FAX (610) 593-2985 Parkesburg Pennsylvania – a very special place where 21st Century technology converges with Old World ethics.


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    PDF 2002/95/EC, sphhr102tk

    5082-3188

    Abstract: HP 5082-3081 hp 5082* guide
    Text: Non-Surface Mount PIN and Schottky␣ Diodes Selection Guide General Purpose Glass Schottky Diodes Typical Specifications @ 25°C Case Temperature Part Number Applications Vbr (V) Vf @ 1 mA (mV) Ct (pF) Ir (nA) 5082-2800 (1N5711) High level detecting, mixing, switching, gating, sampling, wave shaping


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    PDF 1N5711) 1N5712) 1N5767) Applicat45 HSCH-9401 5965-7994E 5968-0548E 5082-3188 HP 5082-3081 hp 5082* guide

    Untitled

    Abstract: No abstract text available
    Text: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 1 kHz/ 0.1 mV ∆T = 40 K Impendance Rated Current DC Resistance Value Unit Tol. L 2x 25 µH ±30% Zmax IR 2800 Ω typ. 1000 mA max. max. RDC 0.12 Ω LS


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    Agilent 9981

    Abstract: arklone p
    Text: LED Light Bars HLCP-A100, -B100, -C100, -D100, -E100, -F100, -G100, -H100 HLMP-2300, -2350, -2400, -2450, -2500, -2550, -2600, -2620, -2635, -2655, -2670, -2685, -2700, -2720, -2735, -2755, -2770, -2785, -2800, -2820, -2835, -2855, -2870, -2885, -2950, -2965


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    PDF HLCP-A100, -B100, -C100, -D100, -E100, -F100, -G100, -H100 HLMP-2300, HLCP-X100 Agilent 9981 arklone p

    HLCP-A100

    Abstract: HLMP-2300 HLCP-X100
    Text: LED Light Bars HLCP-A100, -B100, -C100, -D100, -E100, -F100, -G100, -H100 HLMP-2300, -2350, -2400, -2450, -2500, -2550, -2600, -2620, -2635, -2655, -2670, -2685, -2700, -2720, -2735, -2755, -2770, -2785, -2800, -2820, -2835, -2855, -2870, -2885, -2950, -2965


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    PDF HLCP-A100, -B100, -C100, -D100, -E100, -F100, -G100, -H100 HLMP-2300, HLCP-X100 HLCP-A100 HLMP-2300

    D1809

    Abstract: D1800 D1800N D1809N 7KA2
    Text: O h l3 D1800N D1809N EUPEC S2E D Typen reihe/Type range_ D 1800 N D 1809 N 2800 2800 Elektrische Eigenschaften Electrical properties Höchstzulässioe Werte V rrm Periodische Spitzensperrspannung ' frm sm Effektiver Durchlaßstrom Dauergrenzstrom •f a v m


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    PDF D1800N D1809 3M032T7 D1800 D1809N 7KA2

    Untitled

    Abstract: No abstract text available
    Text: DOUBIE BALANCED M KER DMM-2A-2800 1500to4200M H z/+ 7to+ 13c£m ID/Wjdeband/SM ACannactms PRINCIPAL SPECIFICATIONS Model Number RF/LO Frequency, MHz DMM-2A-2800 1500-4200 IF Frequency, MHz LO Drive dBm, Norn. Range D C - 1000 +7 (+7 to 13) Conversion Loss, dB,


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    PDF DMM-2A-2800 1500to4200M DMM-2A-2800 29Apr96 /EAX201-575-0531

    TMS 1024

    Abstract: VT003 TMS2800
    Text: MOS LSI TMS 2800 JC. TMS 2800 NC 1024-BIT STATIC READ-ONLY MEMORY features z c ^ • 1024-bit capacity • Static operation • Maximum access time under 1 microsecond • Open-drain output buffers or double-ended buffers • TTL compatible • 16-pin dual-in-line package


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    PDF 1024-BIT 16-pin TMS 1024 VT003 TMS2800

    08/TBA 2800

    Abstract: TBA 2800
    Text: TBA 2800 Infrared Pream plifier 1C A A A A A A A Bipolar integrated circuit, intended as a receiver preamplifier for Central Control Unit for the infrared remote-control sy­ stems designed with integrated circuits of ITT. y y y y y y y The TBA 2800 preamplifier 1C contains four main parts: the


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    PDF 50-Hz-modulated 4bfl2711 08/TBA 2800 TBA 2800

    PE6015

    Abstract: No abstract text available
    Text: .705 — .2800 .5000 PASTERNACK ENTERPRISES, INC. P.O BOX 1S759, IRVINE, CA 92G23 PHONE 949 261-1920 FAX (949) 261-7451 WEB ADDRESS: www.pastemack.com E-MAIL ADDRESS: sates@pasternack.com PASTERNACK ENTERPRISES COAXIAL & FIBER OPTICS ESTABLISHED 1972 DWG TTTLE


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    PDF PE6015 PE6015