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    2825 QFN Search Results

    2825 QFN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NBSG53AMNG Rochester Electronics LLC 53 SERIES, LOW SKEW CLOCK DRIVER, 1 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), QCC16, 3 X 3 MM, LEAD FREE, QFN-16 Visit Rochester Electronics LLC Buy
    EL9112ILZ Renesas Electronics Corporation Triple Differential Receiver/Equalizer, QFN, /Tube Visit Renesas Electronics Corporation
    ISL59445IRZ Renesas Electronics Corporation 1GHz Triple Multiplexing Amplifiers, QFN, /Tube Visit Renesas Electronics Corporation
    ISL99125BDRZ-T Renesas Electronics Corporation DrMOS (Driver + FET), QFN, / Visit Renesas Electronics Corporation
    ISL99135BDRZ-T Renesas Electronics Corporation DrMOS (Driver + FET), QFN, / Visit Renesas Electronics Corporation

    2825 QFN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MAX5883

    Abstract: MAX5884 MAX5884EGM MAX5885 MAX5886 MAX5887 MAX5888 Best GSM state transition diagram 30.72MHZ
    Text: 19-2825; Rev 0; 4/03 3.3V, 14-Bit, 200Msps High Dynamic Performance DAC with CMOS Inputs ♦ Single 3.3V Supply Operation ♦ Excellent SFDR and IMD Performance SFDR = 77dBc at fOUT = 10MHz to Nyquist IMD = -86dBc at fOUT = 10MHz ACLR = 72dB at fOUT = 30.72MHz


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    14-Bit, 200Msps 77dBc 10MHz -86dBc 72MHz 48-Pin MAX5884EGM MAX5884 MAX5883 MAX5884 MAX5884EGM MAX5885 MAX5886 MAX5887 MAX5888 Best GSM state transition diagram 30.72MHZ PDF

    MAX5883

    Abstract: MAX5884 MAX5884EGM MAX5885 MAX5886 MAX5887 MAX5888
    Text: 19-2825; Rev 1; 12/03 3.3V, 14-Bit, 200Msps High Dynamic Performance DAC with CMOS Inputs ♦ Single 3.3V Supply Operation ♦ Excellent SFDR and IMD Performance SFDR = 77dBc at fOUT = 10MHz to Nyquist IMD = -86dBc at fOUT = 10MHz ACLR = 72dB at fOUT = 30.72MHz


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    14-Bit, 200Msps 77dBc 10MHz -86dBc 72MHz 48-Pin MAX5884EGM MAX5884 MAX5883 MAX5884 MAX5884EGM MAX5885 MAX5886 MAX5887 MAX5888 PDF

    QFN-48 LAND PATTERN

    Abstract: No abstract text available
    Text: 19-2825; Rev 1; 12/03 3.3V, 14-Bit, 200Msps High Dynamic Performance DAC with CMOS Inputs ♦ Single 3.3V Supply Operation ♦ Excellent SFDR and IMD Performance SFDR = 77dBc at fOUT = 10MHz to Nyquist IMD = -86dBc at fOUT = 10MHz ACLR = 72dB at fOUT = 30.72MHz


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    14-Bit, 200Msps MAX5884 77dBc 10MHz. 200mW. QFN-48 LAND PATTERN PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-2825; Rev 1; 12/03 3.3V, 14-Bit, 200Msps High Dynamic Performance DAC with CMOS Inputs ♦ Single 3.3V Supply Operation ♦ Excellent SFDR and IMD Performance SFDR = 77dBc at fOUT = 10MHz to Nyquist IMD = -86dBc at fOUT = 10MHz ACLR = 72dB at fOUT = 30.72MHz


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    14-Bit, 200Msps MAX5884 77dBc 10MHz. 200mW. PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-2825; Rev 1; 12/03 3.3V, 14-Bit, 200Msps High Dynamic Performance DAC with CMOS Inputs ♦ 200Msps Output Update Rate ♦ Single 3.3V Supply Operation ♦ Excellent SFDR and IMD Performance SFDR = 77dBc at fOUT = 10MHz to Nyquist IMD = -86dBc at fOUT = 10MHz


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    14-Bit, 200Msps 77dBc 10MHz -86dBc 72MHz 48-Pin MAX5884EGM PDF

    AAT2822

    Abstract: vgh vgl DIODE smd marking A4 SOT363 GRM188R61E104K AAT2823 AAT2823IBK-T1 F9XYY B7xyy marking code 302
    Text: DATA SHEET AAT2822/2823/2824/2825 TFT-LCD DC/DC Converter with WLED Driver and VCOM Buffer General Description Features The AAT2822-AAT2825 family of integrated panel power solutions provides the regulated voltages required by an active-matrix thin-film transistor TFT liquid-crystal display (LCD). The AAT2822 includes a triple-output DC-DC


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    AAT2822/2823/2824/2825 AAT2822-AAT2825 AAT2822 02081A vgh vgl DIODE smd marking A4 SOT363 GRM188R61E104K AAT2823 AAT2823IBK-T1 F9XYY B7xyy marking code 302 PDF

    202081B

    Abstract: DIODE smd marking A4 SOT363 RES01
    Text: DATA SHEET AAT2822/2823/2824/2825 TFT-LCD DC/DC Converter with WLED Driver and VCOM Buffer General Description Features The AAT2822-AAT2825 family of integrated panel power solutions provides the regulated voltages required by an active-matrix thin-film transistor TFT liquid-crystal display (LCD). The AAT2822 includes a triple-output DC-DC


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    AAT2822/2823/2824/2825 AAT2822-AAT2825 AAT2822 202081B 202081B DIODE smd marking A4 SOT363 RES01 PDF

    QFN-32 footprint

    Abstract: TRANSISTOR FS 2025 32 pins qfn 5x5 footprint NB7V572M PRBS23 QFN32 NB7VQ572M 2825 qfn jedec package QFN-32 FOOTPRINT
    Text: NB7VQ572M 1.8V / 2.5V /3.3V Differential 4:1 Mux w/Input Equalizer to 1:2 CML Clock/Data Fanout / Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM Description The NB7VQ572M is a high performance differential 4:1 Clock /


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    NB7VQ572M NB7VQ572M NB7V572M, NB7VQ572M/D QFN-32 footprint TRANSISTOR FS 2025 32 pins qfn 5x5 footprint NB7V572M PRBS23 QFN32 2825 qfn jedec package QFN-32 FOOTPRINT PDF

    Untitled

    Abstract: No abstract text available
    Text: NB7VQ572M 1.8V / 2.5V /3.3V Differential 4:1 Mux w/Input Equalizer to 1:2 CML Clock/Data Fanout / Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM Description The NB7VQ572M is a high performance differential 4:1 Clock /


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    NB7VQ572M NB7VQ572M NB7V572M, NB7VQ572M/D PDF

    HMPS-2820

    Abstract: diodes with piv greater than 18 QFN PACKAGE Junction to PCB thermal resistance
    Text: Products > RF ICs/Discretes > Schottky Diodes > Surface Mount > HMPS-2820 HMPS-2820 RF/Microwave mixer/detector diode Description Lifecycle status: Active Features The MiniPak HMPS-282x family of Schottky diodes is the most consistent and best all-round device available, and finds applications in mixing, detecting, switching, sampling, clamping and


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    HMPS-2820 HMPS-282x HMPS-282x-TR1 HMPS-282x-BLK HMPS-282x-TR2 HMPS-2820 diodes with piv greater than 18 QFN PACKAGE Junction to PCB thermal resistance PDF

    2825 qfn

    Abstract: pin diodes marking AA
    Text: HMPS-282x Series MiniPak Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These ultra-miniature products represent the blending of Avago Technologies’ proven semiconductor and the latest in leadless packaging. This series of Schottky diodes is


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    HMPS-282x 5989-3628EN AV02-0571EN 2825 qfn pin diodes marking AA PDF

    Untitled

    Abstract: No abstract text available
    Text: HMPS-282x Series MiniPak Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These ultra-miniature products represent the blending of Avago Technologies’ proven semiconductor and the latest in leadless packaging. This series of Schottky


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    HMPS-282x AV02-0571EN PDF

    AN1124

    Abstract: AN997 HMPS-2825 HSMS-282B
    Text: HMPS-282x Series MiniPak Surface Mount RF Schottky Barrier Diodes Data Sheet Description/Applications Features These ultra-miniature products represent the blending of Avago Technologies’ proven semiconductor and the latest in leadless packaging. This series of Schottky diodes


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    HMPS-282x AV02-0571EN AN1124 AN997 HMPS-2825 HSMS-282B PDF

    Untitled

    Abstract: No abstract text available
    Text: SN54LV139A, SN74LV139A DUAL 2ĆLINE TO 4ĆLINE DECODERS/DEMULTIPLEXERS SCLS396I − APRIL 1998 − REVISED APRIL 2005 D 2-V to 5.5-V VCC Operation D Max tpd of 7.5 ns at 5 V D Support Mixed-Mode Voltage Operation on D All Ports Designed Specifically for High-Speed


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    SN54LV139A, SN74LV139A SCLS396I 000-V A114-A) A115-A) LV139A SN74LV139A PDF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 mΩ Features General Description „ SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have


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    FDMS8570S FDMS8570S PDF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 mΩ General Description Features ̈ SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have


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    PDF

    FR408

    Abstract: 66417 AN1955 C0603C103J5RAC ECUV1H150JCV MMG3004NT1 AN377 275-232 5 vdc 4-0308 2825 qfn
    Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 5, 5/2010 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small-signal, high


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    MMG3004NT1 MMG3004NT1 FR408 66417 AN1955 C0603C103J5RAC ECUV1H150JCV AN377 275-232 5 vdc 4-0308 2825 qfn PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 8, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small-signal, high


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    MMG3004NT1 MMG3004NT1 PDF

    38494

    Abstract: 22851
    Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 8, 10/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small-signal, high


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    MMG3004NT1 MMG3004NT1 38494 22851 PDF

    JAN 7289

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 7, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small-signal, high


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    MMG3004NT1 MMG3004NT1 JAN 7289 PDF

    71803

    Abstract: 66417 FR408 AN1955 C0603C103J5RAC ECUV1H150JCV MMG3004NT1 an3778
    Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 6, 9/2010 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small-signal, high


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    MMG3004NT1 MMG3004NT1 71803 66417 FR408 AN1955 C0603C103J5RAC ECUV1H150JCV an3778 PDF

    amd 2587

    Abstract: ca608 Transistor BC 1078 22342 capacitor EMC2102-DZK 186 diod TRANSISTOR BC 187 2N3904 EMC2102 transistor bc 187 pin details
    Text: EMC2102 RPM-Based Fan Controller with HW Thermal Shutdown PRODUCT FEATURES Datasheet GENERAL DESCRIPTION The EMC2102 is an SMBus, closed-loop, RPM-based fan controller/driver with hardware HW thermal shutdown and reset controller. The EMC2102 is packaged in a thermally enhanced, compact, 5x5, 28pin lead-free RoHS compliant QFN package.


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    EMC2102 EMC2102 28pin amd 2587 ca608 Transistor BC 1078 22342 capacitor EMC2102-DZK 186 diod TRANSISTOR BC 187 2N3904 transistor bc 187 pin details PDF

    heds 5310

    Abstract: VC 5022-2 p605 mosfet HEDS 6310 encoder heds 6310 acsl 086 s SMD MOSFET DRIVE 4606 Alps GMR sensor transistor 5503 dm logitech x 530
    Text: Avago Technologies www.avagotech.com AVAGO TECHNOLOGIES EBV Elektronik GmbH & Co. KG www.ebv.com Оптоэлектронные и СВЧ компоненты «Аваго Текнолоджиз» АПРЕЛЬ ОПТОЭЛЕКТРОННЫЕ И СВЧ КОМПОНЕНТЫ «АВАГО ТЕКНОЛОДЖИЗ»


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents bq24265, bq24266, bq24267 SLUSBY5 – JUNE 2014 1 Features 3 Description • The bq24265, bq24266, and bq24267 are highly integrated single cell Li-Ion battery charger and


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    bq24265 bq24266 bq24267 bq2426x PDF