27C32
Abstract: 24c04 Atmel 27c301 atmel 24c02 39SF040 24C08 ATMEL dataman s4 27C101 Xicor 28256 eeprom 2864a
Text: Dataman S4 Programmer Device Support List Library Version 2.84 May 2001 8 Bit EPROMS, EEPROMS & Flash ROMS AMD 27010 2716B 2732B 27C010 27C100 27C512L 27HB010 28C256 28F256 29F002NBB 29F040 9716 9864-25 27128 27256 27512 27C020 27C128 27C64 2817A 28F010 28F512
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Original
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2716B
2732B
27C010
27C100
27C512L
27HB010
28C256
28F256
29F002NBB
29F040
27C32
24c04 Atmel
27c301
atmel 24c02
39SF040
24C08 ATMEL
dataman s4
27C101
Xicor 28256 eeprom
2864a
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PDF
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EEPROM 28256
Abstract: SRAM 34 pin 28256 eeprom 28256 DS9034PC 34-PIN DS1230 DS1230W DS1230W-150 backup protect pinout
Text: DS1230W 3.3V 256k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles
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Original
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DS1230W
28-pin
EEPROM 28256
SRAM 34 pin
28256 eeprom
28256
DS9034PC
34-PIN
DS1230
DS1230W
DS1230W-150
backup protect pinout
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PDF
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EEPROM 28256
Abstract: 34-PIN DS1230 DS1230W DS1230W-100 DS1230W-150 DS9034PC 740-MIL SRAM 34 pin
Text: DS1230W 3.3V 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory
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Original
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DS1230W
100ns
28-pin
EEPROM 28256
34-PIN
DS1230
DS1230W
DS1230W-100
DS1230W-150
DS9034PC
740-MIL
SRAM 34 pin
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PDF
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Untitled
Abstract: No abstract text available
Text: DS1230W 3.3V 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory
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Original
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DS1230W
100ns
28-pin
68-pin
DS9034PC
DS1230W
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PDF
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28256 eeprom
Abstract: DALLAS SEMICONDUCTOR Ds1230 EEPROM 28256 dallas ds1230 a7 surface mount diode DS1230Y-200 DALLAS DS1230Y-70 DS1230Y-85 DQ213 DS1230AB
Text: DS1230Y/AB DS1230Y/AB 256K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • DIP-package devices directly replace 32K x 8 volatile static RAM or EEPROM
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Original
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DS1230Y/AB
DS1230YL/ABL
DS34PIN
28256 eeprom
DALLAS SEMICONDUCTOR Ds1230
EEPROM 28256
dallas ds1230
a7 surface mount diode
DS1230Y-200 DALLAS
DS1230Y-70
DS1230Y-85
DQ213
DS1230AB
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PDF
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34-PIN
Abstract: DS1230 DS1230W DS1230W-100 DS1230W-150 DS9034PC
Text: DS1230W 3.3V 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory
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Original
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DS1230W
100ns
28-pin
34-PIN
DS1230
DS1230W
DS1230W-100
DS1230W-150
DS9034PC
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PDF
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plcc 68-pin socket
Abstract: 28256 EEPROM 28256 34-PIN DS1230 DS1230W DS1230W-100 DS1230W-150 DS9034PC
Text: DS1230W 3.3V 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory
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Original
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DS1230W
100ns
28-pin
plcc 68-pin socket
28256
EEPROM 28256
34-PIN
DS1230
DS1230W
DS1230W-100
DS1230W-150
DS9034PC
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PDF
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EEPROM 2864
Abstract: 27C512 eprom 2864A eeprom 27C020 27C010 27C020 27C040 27C080 27C128 27C256
Text: EeRom-8U User’s Guide Electronic Engineering Tools, Inc. 549 Weddell Drive Sunnyvale, CA 94089, USA www.eetools.com support@eetools.com Tel: 408 734-8184 Fax: (408) 734-8185 Copyright 1992-2002 by E. E. Tools, Inc. All rights reserved. No part of this
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Original
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ADP32:
32-PLCC
32-DIP
28-DIP
EEPROM 2864
27C512 eprom
2864A
eeprom 27C020
27C010
27C020
27C040
27C080
27C128
27C256
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PDF
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DS1230
Abstract: EEPROM 28256 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC
Text: DS1230Y/AB 256k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles
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Original
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DS1230Y/AB
DS1230Y)
DS1230AB)
28-pin
DS1230
EEPROM 28256
DS1230AB
DS1230AB-100
DS1230AB-70
DS1230AB-85
DS1230Y
DS1230Y-100
DS1230Y-85
DS9034PC
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PDF
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EEPROM 28256
Abstract: DS1730Y-150 DS1730Y-200
Text: DS1730Y DS1730Y 3–Volt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAM or EEPROM
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Original
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DS1730Y
DS1730Y
PLCC34P
DS34PIN
EEPROM 28256
DS1730Y-150
DS1730Y-200
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PDF
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DS1230
Abstract: DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC
Text: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles
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Original
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DS1230Y/AB
DS1230Y)
DS1230AB)
28-pin
DS1230
DS1230AB
DS1230AB-100
DS1230AB-70
DS1230AB-85
DS1230Y
DS1230Y-100
DS1230Y-85
DS9034PC
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PDF
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DS1230Y-100
Abstract: DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-85 DS9034PC ADS1230
Text: DS1230Y/AB 256k Nonvolatile SRAM FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory
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Original
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DS1230Y/AB
DS1230Y)
DS1230AB)
28-pin
100ns
120ns
DS1230Y-100
DS1230
DS1230AB
DS1230AB-100
DS1230AB-70
DS1230AB-85
DS1230Y
DS1230Y-85
DS9034PC
ADS1230
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PDF
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DS1230
Abstract: DS1230W DS1230W-100 DS1230W-100IND DS1230W-150 DS1230WP-100 DS1230WP-100IND DS9034PC
Text: DS1230W 3.3V 256k Nonvolatile SRAM www.maxim-ic.com FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory
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Original
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DS1230W
100ns
28-pin
DS1230
DS1230W
DS1230W-100
DS1230W-100IND
DS1230W-150
DS1230WP-100
DS1230WP-100IND
DS9034PC
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PDF
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DS1230
Abstract: DS1230W DS1230W-100 DS1230W-100IND DS1230W-150 DS1230WP-100 DS1230WP-100IND DS9034PC
Text: DS1230W 3.3V 256k Nonvolatile SRAM www.maxim-ic.com FEATURES • • 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory
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Original
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DS1230W
100ns
28-pin
DS1230
DS1230W
DS1230W-100
DS1230W-100IND
DS1230W-150
DS1230WP-100
DS1230WP-100IND
DS9034PC
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PDF
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28256 eeprom
Abstract: No abstract text available
Text: D S 1230Y/AB DALLAS SEMICONDUCTOR DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • Data retention in the absence of V qC • Data is automatically protected during the decrease in Vc c at power loss • Directly replaces 32K x 8 volatile static RAM or EEPROM
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OCR Scan
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1230Y/AB
28-pin
DS1230Y/AB
DS1230Y/AB
28256 eeprom
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PDF
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28256 eeprom
Abstract: DS1235Y
Text: 0S1235Y/AB DALLAS DS1235Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR PIN DESCRIPTION FEATURES • Data retention in the absence of Vcc A141 1 A121 2 A71 3 A61 4 AS 1 5 A41 6 A31 7 A21 8 A11 9 AO1 10 DQO1 11 OQ1 1 12 DQ2 1 13 GND1 14 • Data is automatically protected during power
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OCR Scan
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0S1235Y/AB
DS1235Y/AB
28-pin
DS1235Y)
DS1235AB)
144-b
200ns
28256 eeprom
DS1235Y
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PDF
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Untitled
Abstract: No abstract text available
Text: DS1230W PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1230W 3.3V 256K Nonvolatile SRAM PIN ASSIGNMENT A14 1| A 12 1 1 27 11 W E A7 1 26 | A6 1 • Replaces 32K x 8 volatile static RAM, EEPROM or Flash m em ory A5 11 A4 11 • Unlimited write cycles A3 1| 7 A2
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OCR Scan
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DS1230W
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PDF
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1730Y
Abstract: No abstract text available
Text: DS1730Y/YLPM DALLAS SEMICONDUCTOR DS1730Y/YLPM 3 Volt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of V qq A 14 11 1 28 1 V CC A12 1 1 27 § WE • Directly replaces 32K x 8 volatile static RAMs or EEPROM s A7 1 1 A6
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OCR Scan
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DS1730Y/YLPM
28-pin
DS1730Y)
DS1730YLPM
34-PIN
34P-S
HIS-40001-04
DS34PIN-PLC
1730Y
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PDF
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Untitled
Abstract: No abstract text available
Text: DS1730Y/AB PRELIM IN AR Y DALLAS SEMICONDUCTOR DS1730Y/AB Dual Voltage Partitioned 256K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc Vcc • Data is automatically protected during power loss wl • Directly replaces 32K x 8 volatile static RAMs or EEPROMs
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OCR Scan
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DS1730Y/AB
28-pin
OS1730Y/AB
DS1730Y/AB
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PDF
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d774
Abstract: d778 b778 58C65 08CB 27HC642 58c256 df4a SIGNETICS 87C256 57C49B
Text: 40M I0I Device Support Rev 14.2 4 1M10 i Device Support (Rev 15.0) 42M I0I Device Support (Rev 14.1) (November 1994) Please note: Any device indicated by => is a new addition to the ydevice support list. S T A G PROORAMMCR3 Stag Programmers Limited Silver Court Watchmead Welwyn Garden City Herts AL7 ILT
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OCR Scan
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27C5I2A
27C0I0
27C020
27C040
98C64
28I6A
27C64
27HC64
27HC64I
27HC642
d774
d778
b778
58C65
08CB
58c256
df4a
SIGNETICS 87C256
57C49B
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PDF
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Untitled
Abstract: No abstract text available
Text: DS1730Y/YLPM DALLAS SEMICONDUCTOR DS1730Y/YLPM 3 Volt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc Vcc • Data is automatically protected during power loss WE • Directly replaces 32K x 8 volatile static RAMs or EEPROMs
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OCR Scan
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DS1730Y/YLPM
28-pin
DS1730Y)
source970
68-pin
PLCC34P-SMT-3
HIS-40001-04
DS34PIN-PLC
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PDF
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28256 eeprom
Abstract: EEPROM 28256 DS1235AB DS1235Y AO-A14 RAM MEMORY 28256 AB15C DS123SY
Text: DAI I AS DS1235Y/AB s e m ic o n d u c t o r 256K Nonvolatile SRAM PIN DESCRIPTION FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss A u l 1 2 8 1 VC C A12l 2 2 7 l WB A7l 3 26 1 A13 I 4 25 1 A8 A5 ! 5
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OCR Scan
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DS1235Y/AB
28-pin
DS1235Y)
DS1235AB)
DS1235Y/AB
144-bit,
200ns
28256 eeprom
EEPROM 28256
DS1235AB
DS1235Y
AO-A14
RAM MEMORY 28256
AB15C
DS123SY
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PDF
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Untitled
Abstract: No abstract text available
Text: DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 A6 A5 A4 A3 A2 • Data is autom atically protected during power loss • Replaces 32K x 8 volatile static RAM, EEPROM or
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OCR Scan
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DS1230Y/AB
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PDF
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Untitled
Abstract: No abstract text available
Text: DS1730Y/YLPM DALLAS SEMICONDUCTOR DS1730Y/YLPM 3 Volt Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of V cc • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAMs or EEPROMs
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OCR Scan
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DS1730Y/YLPM
28-pin
DS1730Y)
2bl4130
DD10771
DS1730YLPM
34-PIN
68-pin
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PDF
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