4435 power ic
Abstract: transistor NEC B 617 IC 4435 NEC silicon epitaxial power transistor 1694 NEC B 536 nec b 536 transistor NEC B 617 gh 312 NPN transistor mhz s-parameter 2SC3357
Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE DIMENSIONS High gain 2 | S21 | = 12 dB TYP, @f = 1 GHz, VCE = 10 V, Ic = 20 mA New power mini-mold package version of a 4-pin type
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2SC5336
2SC3357
4435 power ic
transistor NEC B 617
IC 4435
NEC silicon epitaxial power transistor 1694
NEC B 536
nec b 536 transistor
NEC B 617
gh 312
NPN transistor mhz s-parameter
2SC3357
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NEC JAPAN 282 110 01
Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the
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2SC4570
2SC4570
SC-70)
2SC4570-T1
NEC JAPAN 282 110 01
NEC 2561
TYP 513 309
2SC4570-T1
2SC4570-T2
date sheet ic 7483
marking 929 922
nec 5261
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ic 7483 pin configuration
Abstract: T 427 transistor TYP 513 309 2SC4570 ts 1683 nec 5261
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA803T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD µPA803T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1 6
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PA803T
PA803T
PA803T-T1
2SC4570)
ic 7483 pin configuration
T 427 transistor
TYP 513 309
2SC4570
ts 1683
nec 5261
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nec 2532
Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain
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2SC5014
2SC5014)
2SC5014-T2
nec 2532
NEC JAPAN 282 110 01
NEC 282 185 01
816-102
2SC5014
2SC5014-T1
2SC5014-T2
NEC 2134 transistor
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transistor WT6
Abstract: transistor WT6 45 transistor WT6 Equivalent WT6 transistor 651-220K pin configuration of ic 1496
Text: MwT-6 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y if 50f| • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 900 MICRON GATE WIDTH CHOICE OF CHIP AND ONE
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lg 5528
Abstract: No abstract text available
Text: MwT-6 GaAs FET DEVICE PRELIMINARY M IC R O W A V E TECHNOLOGY MICROWAVE 4268Solar Way; Fremont,. CA 94538 415-651-6700 FAX 415-651-2208 TECHNOLOGY 37E D blSMlüQ GQDGÜ3S S MRUV FEATURES • 0.3 MICRON REFRACTORY METAL/GOLD GATE • AIR BRIDGE TECHNOLOGY • DIAMOND-UKE CARBON DLC PASSIVATION
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4268Solar
lg 5528
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.
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NE960R2
NE961R200
NE960R200
NE960R275
P13775E
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TGS 822
Abstract: No abstract text available
Text: MwT-16 M ic r o w a v e • • • • • • 26 GHz High Power GaAs FET techno lo g y 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 900 MICRON GATE WIDTH DIAMOND-LIKE CARBON PASSIVATION
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MwT-16
MwT-16
TGS 822
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fujitsu power amplifier GHz
Abstract: No abstract text available
Text: FMM5010VF GaAs MMIC FEATURES • • • • • High O utput Power: 21.0dBm typ. High Linear Gain: 25dB (typ.) Low In/Out VSW R Impedance M atched Zin/Zout = 50Q Small Herm etic M etal-C eram ic Package (VF) DESCRIPTION The FM M 5010VF is a pow er am plifier designed for VSAT applications
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FMM5010VF
FCSI0598M200
fujitsu power amplifier GHz
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Untitled
Abstract: No abstract text available
Text: M w T -1 6 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y rr • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE 900 MICRON GATE WIDTH DIAMOND-UKE CARBON PASSIVATION
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MwT-16
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Untitled
Abstract: No abstract text available
Text: M ic r o w a v e T e c h n o l o g y • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAL/GOLD GATE 900 MICRON GATE WIDTH DIAMOND-LIKE CARBON PASSIVATION DESCRIPTION T he M w T -16 is a G aA s M E S F E T de vice w h o se nom inal q u a rte r-m icro n gate length and 900 m icron gate w idth m ake it ideally
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MwT-16
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Untitled
Abstract: No abstract text available
Text: $ k \ rs m M ic r o w a v e T e c h n o l o g y • • • • • MwT-H16 32 GHz High Power AIGaAs/lnGaAs PHEMT 28 dBm POWER OUTPUT AT 12 GHz 11 dB GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 900 MICRON GATE WIDTH DIAMOND-LIKE CARBON PASSIVATION
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MwT-H16
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transistor NEC B 617
Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and
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2SC5010
2SC5010
transistor NEC B 617
nec 2035 744
zo 607 p 408
7749 transistor
ic 151 811
transistor 3568
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA803T NPN SILICON EPITAXIALTRANSISTO R WITH BUILT-IN 2 ELEMENTS M INI MOLD ¿¡PA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAWINGS (U n it: m m ) FEATURES •
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PA803T
PA803T
2SC4570)
uPA803T
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Untitled
Abstract: No abstract text available
Text: SIEMENS CFY 35 GaAs FET Features • Low noise • High gain • Fo r lo w -noise front end am plifiers • Fo r D B S dow n co nverters 5:1 E S D : E le c tro sta tic d is c h a rg e se n sitive de v ice , o b se rv e handling pre ca utio ns! Type Marking
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NEC Ga FET marking Rf
Abstract: nec gaas fet marking
Text: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION N E76184B is a N-channel GaAs MES FET housed in ce ram ic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.
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NE76184B
NE76184B
NE76184B-T1
NE76184B-T1A
IR30-00
NEC Ga FET marking Rf
nec gaas fet marking
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transistor NEC D 822 P
Abstract: transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
Text: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R FEATURES • PACKAGE DIMENSIONS High gain in millimeters | S 21 | 2 = 12 dB TYP, @ f = 1 GHz, V c e = 10 V , Ic = 20 mA
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2SC5336
2SC3357
transistor NEC D 822 P
transistor NEC B 617
NEC D 822 P
NEC B 617
NEC D 809
50/transistor NEC D 822 P
NEC D 809 F
P1093
4435 power ic
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AT60570
Abstract: at-60570 Silicon Bipolar Transistor AVANTEK transistor AVANTEK oscillator
Text: AVANTEK INC 20E D • 0AVANTEK HMlIfab QQGbSlb AT-60570 Up to 6 GHz Low Noise Silicon Bipolar Transistor 4 - Avantek 70 m il Package Features • • Low Bias Current O peration: Low Noise Figure: 1.8 dB typ ical at 2.0 G Hz 2.8 dB typ ical at 4.0 G Hz •
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AT-60570
AT60570
Silicon Bipolar Transistor
AVANTEK transistor
AVANTEK oscillator
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Untitled
Abstract: No abstract text available
Text: MwT-12 GaAs FET DEVICE PRELIMINARY J \/IlC R O W A V E T E C H N O L O G Y 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 I MICROWAVE TECHNOLOGY _ _ I_ 37E D • 1,124100 OOOOQbB T B I M R U V T ta |-76- f— j • — »» IS'a' — -300- 1-81-1
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MwT-12
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MwT-671
Abstract: LQD 421 MWT671HP lsoj
Text: MwT-6 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y 4m * • • • • • • Units in pun 4-50-fc 70 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE 900 MICRON GATE WIDTH
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bl24100
000057b
MwT-671
LQD 421
MWT671HP
lsoj
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the
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2SC4570
2SC4570
SC-70)
4570-T
PACK878
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Untitled
Abstract: No abstract text available
Text: " 2225-K Martin Avenue, Santa Clara, CA 95050 FAX 1 COM PONENTS 408 492-1400 (408) 492-1500 Outline Drawings ) AC272 Low Noise Figure . High Output Level .
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2225-K
AC272
0to50Â
-55to85C
59C78
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Untitled
Abstract: No abstract text available
Text: GENERAL PURPOSE GaAs MESFET FEATURES NE76100 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 3 V, Ids = 10 mA LOW NOISE FIGURE: N F = 0.8 d B ty p ic a l at f = 4 G H z m "O HIGH ASSO CIATED GAIN: G a = 12.0 d B ty p ic a l at f = 4 G H z o z p T3 < Li_
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NE76100
IS12S21I
NE76100
140nm
NE76100N
NE76100M
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CT 1975 sam
Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the
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2SC4570
2SC4570-T1
CT 1975 sam
transistor NEC D 588
NEC 2561 LE 401
zo 607 p 408
NEC 2561 de
nec 2561 Q 634
date sheet ic 7483
C4570
CT 1975 - sam
T72 marking
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