Contextual Info: SGS-THOMSON M 28F101A M 28V101A CMOS 1 Megabit 128K x 8, Chip Erase FLASH MEMORY PR O D U C T C O N C E PT MEMORY CHIP ERASE SUPPLY VOLTAGE in READ OPERATION - 5V ± 10% for 28F101A version - 3.3V ± 0.3V for M28V101A version 12V PROGRAMMING VOLTAGE PROGRAM/ERASE CYCLES

PP5V

Abstract: M5M28F101AFP 708-8034
Contextual Info: K MITSUBISHI LSIs _ ' M 5 M 2 8 F 1 0 1 _ A F P , J , V P , R V - 8 5 , - 1 0 , - 1 2 1048576-BIT 131072-WQRD BY 8-BIT CMOS FLASH MEMORY DESCRIPTION The MITSUBISHI 28F101A is hlgh-speei 1048576-bit CMOS Flash Memories. This is suitable for the api lications with micro­

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

Contextual Info: MITSUBISHI LSIs M 5 M 2 8 F 101 A F P ,J ,V P ,R V -8 5 ,-1 0 1048576-BIT 131072-WORD BY 8-BIT CMOS FLASH MEMORY DESCRIPTION The MITSUBISHI 28F101A is high-speed 1048576-bit CMOS Flash Memories. This is suitable for the applications with micro­ processor or micro-controller where on-board reprogramming is