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    28F410 Search Results

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    28F410 Price and Stock

    Samtec Inc SFSD-05-28-F-41.00-DR-NDX

    DOUBLE ROW DISCRETE WIRE ASSEMBL
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    DigiKey SFSD-05-28-F-41.00-DR-NDX Bag 1
    • 1 $6.74
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    Avnet Americas SFSD-05-28-F-41.00-DR-NDX Bulk 1
    • 1 $6.6052
    • 10 $6.5715
    • 100 $5.57647
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    Mouser Electronics SFSD-05-28-F-41.00-DR-NDX
    • 1 $6.74
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    • 100 $5.71
    • 1000 $4.51
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    Master Electronics SFSD-05-28-F-41.00-DR-NDX
    • 1 -
    • 10 $9.12
    • 100 $7.07
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    Sager SFSD-05-28-F-41.00-DR-NDX 1
    • 1 $6.74
    • 10 $6.74
    • 100 $5.39
    • 1000 $4.51
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    MIL SPEC CONNECT SFSD-05-28-F-41.00-DR-NDX

    DOUBLE ROW DISCRETE WIRE ASSEMBL
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    DigiKey SFSD-05-28-F-41.00-DR-NDX 10
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    • 10 $12.036
    • 100 $11.4414
    • 1000 $10.87653
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    Samtec Inc SFSD-20-28-F-41.00-DR-NDX

    Cable Assembly Discrete Wire 1.041m 40 POS Discrete Wire Housing to 40 POS Discrete Wire Housing RCP-RCP - Bulk (Alt: SFSD-20-28-F-41.00-DR-NDX)
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    Avnet Americas SFSD-20-28-F-41.00-DR-NDX Bulk 1
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    Sager SFSD-20-28-F-41.00-DR-NDX
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    STMicroelectronics M28F41080M1

    Electronic Component
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    ComSIT USA M28F41080M1 220
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    STMicroelectronics M28F410120N1ES

    4 MEGABIT (X8 OR X16, BLOCK ERASE) FLASH MEMORY Flash, 512KX8, 120ns, PDSO56
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    ComSIT USA M28F410120N1ES 15
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    28F410 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Am28F200

    Abstract: No abstract text available
    Text: Discontinued Product—Support Information Only This literature was published years prior to the establishment of Agilent Technologies as a company independent from Hewlett-Packard and describes products or services now available through Agilent. It may also refer to products/services no longer supported by Agilent.


    Original
    E3490A 28F101 28F10 28F400 28F016 S28F010A S28F010 S28F512A S28F210 Am28F200 PDF

    M28F410

    Abstract: No abstract text available
    Text: M 28F410 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Flash Memory • 5V ± 10% SUPPLY VOLTAGE ■ 1 2 V ± 5 % o r ± 1 0 % PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS


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    M28F410 512Kb 256Kb 0020h 00F2h M28F410 PDF

    M28F410

    Abstract: No abstract text available
    Text: w- SCS-THOMSON k7 # . M 28F410 IM [M D iH I è n n M P M ]D (§ Ii 4 Mb (x8/x16, Block Erase FLASH M EM O RY 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE


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    M28F410 x8/x16, 0020h 00F2h M28F410 PDF

    Untitled

    Abstract: No abstract text available
    Text: £jJ SGS-THOMSON 0 iMDIŒ ra(M0©S 28F410 4 Mb (x8/x16, Block Erase FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE ■ 12 V ± 5 % o r± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS


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    M28F410 x8/x16, 0020h 00F2h M28F410 PDF

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: 5 F . 28F410 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Flash Memory • 5 V ± 10% SUPPLY VOLTAGE ■ 12V ± 5% or ± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS T IM E :60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE


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    M28F410 512Kb 256Kb 0020h 00F2h M28F410 PDF

    tower pro sg 90

    Abstract: No abstract text available
    Text: SGS-THOMSON Æ 28F410 M28F420 ÍL [ fï C M O S 4 Megabit x8 or x16, 7 Blocks FLASH M E M O R Y ADVANCE DATA DUAL x8 andx16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and


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    M28F410 M28F420 andx16 TSOP56 20/25mA M28F410, 7W1S37 tower pro sg 90 PDF

    Untitled

    Abstract: No abstract text available
    Text: 28F410 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Flash Memory • 5V ± 10% SUPPLY VOLTAGE ■ 1 2 V ± 5 % o r ± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS


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    M28F410 512Kb 256Kb 0020h 00F2h M28F410 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5 7 . 28F410 M28F420 S G S -T H O M S O N 4 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S 0 4 4 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and


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    M28F410 M28F420 TSOP56 20/25m PDF

    Z3A11

    Abstract: A10113 M28F410 M28F420 TSOP56
    Text: 28F410 M28F420 SGS‘THOMSON G ì . H O » iL I § T [ M ! [ l( S Ì 4 Megabit (x8 or x16, Block Erase) FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or


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    M28F410 M28F420 TSOP56 x20mm TSOP56 20/25m Byte/50 M28F410, Z3A11 A10113 M28F420 PDF

    Untitled

    Abstract: No abstract text available
    Text: mA. M X 2 8 F 4 1 OO MACRON1X. INC. 4M-BIT 5 1 2K x 8] CMOS FLASH MEMORY FEATURES • 524,288x8/262,144x16 sw itchable • Fast access tim e: 120/150/200ns • Low pow er consum ption - 50m A m axim um active current - 100nA m axim um standby current • P rogram m ing and erasing voltage 12V ± 5%


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    288x8/262 144x16 120/150/200ns 100nA Q15/A-1 -1-A17 Q0-Q15 PDF