48-PIN
Abstract: LH28F800SG 17A17 48 tsop flash pinout NC472
Text: PRODUCT INFORMATION 28F800SG 8M 512K x 16 SmartVoltage Flash Memory FEATURES • SmartVoltage technology – 3.0 V or 5 V VCC – 3.0 V, 5 V or 12 V VPP • High-performance – 70 ns (5 V VCC) read access time – 100 ns (2.7 V VCC) read access time
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Original
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LH28F800SG
48-pin
44-Pin
48-ball
28F800SG-4
28F800SG-3
LH28F800SG
17A17
48 tsop flash pinout
NC472
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PDF
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56-PIN
Abstract: LH28F008SA LH28F800SU TSOP056-P-1420 LH28F800SUT
Text: 28F800SU FEATURES • User-Configurable x8 or x16 Operation • User-Selectable 3.3 V or 5 V VCC • 5 V Write/Erase Operations 5 V VPP – No Requirement for DC/DC Converter to Write/Erase • 70 ns Maximum Access Time • Minimum 2.7 V Read capability
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Original
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LH28F800SU
LH28F008SA
56-Pin,
J63428
SMT96107
56-PIN
LH28F008SA
LH28F800SU
TSOP056-P-1420
LH28F800SUT
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PDF
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LH28F800SGHB
Abstract: No abstract text available
Text: PRODUCT INFORMATION 28F800SGHB 8M 512K x 16 SmartVoltage Flash Memory FEATURES • SmartVoltage technology – 3.0 V (2.7 V MIN.) or 5 V VCC – 3.0 V (2.7 V MIN.), 5 V or 12 V VPP • High performance – 100 ns (5 V VCC) read access time – 120 ns (2.7 V VCC) read access time
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Original
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LH28F800SGHB
48-ball
32K-word
28F800SGHB1-1
EL09X261,
SMT98188
LH28F800SGHB
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PDF
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A12E
Abstract: LH2B 48-PIN FBGA048-P-0808 LH28F800SGH-L LH28F800SG-L TSOP048-P-1220
Text: SHARP 28F800SG-L/SGH-L FOR TSOP, CSP 28F800SG-L/SGH-L (FOR TSOP, CSP) Flash Memories DESCRIPTION • Enhanced automated suspend options The LH 28F800S G -L/SG H -L flash m em ories with SmartVoltage technology are high-density, low-cost, - Word write suspend to read
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OCR Scan
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LH28F800SG-L/SGH-L
LH28F800SG-L/SGH-L
appliP-0808)
LH28F800SGXX-L70
LH28F800SGXX-L10
TSOPQ48-P-1220)
8080-d-8l70V9ad)
A12E
LH2B
48-PIN
FBGA048-P-0808
LH28F800SGH-L
LH28F800SG-L
TSOP048-P-1220
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PDF
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IN1001
Abstract: No abstract text available
Text: SHARP PRELIMINARY 1997 FLASH MEMORY LH 28F800SG X X V e r . 0 .3 SHARP CORPORATION NOTICE • This publication is the proprietary product of Sharp and is copyrighted, with all rights reserved. Under the copy right laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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OCR Scan
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28F800SG
31VDS
LH28Fxxx
LH28F800SG
512Kxl6)
IN1001
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PDF
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44-PIN
Abstract: LH28F800SGH-L LH28F800SG-L
Text: SHARP I U O Q C O n n e r I L h z o r o u u o b - L 28F800SG-L FOR SOP 8 M -b it(5 1 2 k B x 1 6 )S m a rtV o lta g e Flash Memory (FOR SOP) DESCRIPTION The 28F800SG-L flash memory with Smart Voltage technology is a high-density, lowcost, nonvolatile, read/write storage solution for a
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OCR Scan
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LH28F800SG-L
512kBx16
LH28F800SG-L
44-pin
OP044-P-0600)
LH28F800SGN-L70
LH28F800SGN-L10
LH28F800SGH-L
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PDF
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LH28F800SGN
Abstract: No abstract text available
Text: SHARP 28F800SG 8-MBIT 512 KB x 16 SmartVoltage FLASH MEMORY FEATURES • S m artV oltage T e c h n o lo g y - 3.0V o r 5V Vcc - 3.0V, 5V o r 12V Vpp • S R A M -C om patible W rite In te rfa c e • H ig h -D e n sity S y m m e tric a lly B lo c k e d
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OCR Scan
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LH28F800SG
48-Lead
44-Lead
48-Ball
32k-word
CSP48-P-080S
CSP-T-48-l-amoe
002112h
LH28F800SGN
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PDF
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Untitled
Abstract: No abstract text available
Text: SHARP J a n .1998 FLASH MEMORYÌ LH28F016SANS-70 Ver.1.1 V_ J SHARP CORPORATION Flash Memory Engineering Department 2 Memory Engineering Center Tenri Integrated C irc u its Development 1C Group SHARP L HF 1 6 S Z B 1 LH28F016SANS-70 16 Mbit (1 Mbit x 16, 2 Mbit x 8)
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OCR Scan
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LH28F016SANS-70
LH28F016SANS-70
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PDF
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circuit diagram of car central lock system
Abstract: STV 5v sense DG board Car Central lock system e purse ccs 100 car central lock car central lock vw OA74 LH28F800SG
Text: PRELIMINARY SHARP LH28F8Q0SG 8-MBIT 512 KB x 16 SmartVoltage FLASH MEMORY FEATURES SmartVoltage Technology • 3.0V or SV Vce - 3.0V, 5V or 12V Vw SRAM-Compatible Write Interface High-Density Symmetrically Blocked Architecture - Sixteen 32k-word Erasable Blocks
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OCR Scan
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LH28F800SG
48-Lead
44-Lead
48-Bail
32k-word
circuit diagram of car central lock system
STV 5v sense DG board
Car Central lock system
e purse
ccs 100
car central lock
car central lock vw
OA74
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PDF
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LH28F800SUT-70
Abstract: LH28F008SA LH28F016SA LH28F016SU IU011
Text: n M n r SPEC No. ISSUE: May 15 1996 T o ; S P E C I F I CAT Product Type_8 M F l a s h IONS F i l e M e m o r y _ L H 2 8 F 8 0 0 S U T —7 0 Model No. L H F 8 0 S 0 5 j&This specifications contains 44 pages including the cover and appendix.
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OCR Scan
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LHF80S05
LH28F800SUTâ
TSOP56-P-1420
AA1115
LH28F800SUT-70
LH28F008SA
LH28F016SA
LH28F016SU
IU011
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PDF
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Untitled
Abstract: No abstract text available
Text: P roduct I nformation APPU CATIONS; LH28F8009GHB 8M 512K x 16 9nartU)ltage Rash Memory apliance DESCRIPTION SHARPS LH28R8009GHB is a 8M flash m anory with 9nartV)ltage technology and features a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of
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OCR Scan
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LH28F8009GHB
48-ball
32K-v\ord
itH28F8009GHB
28F800SGHB1-1
EL09X261,
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PDF
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a14q
Abstract: No abstract text available
Text: TMS28F008SET, TMS28F008SEB, 28F800SET. 28F800SEB TMS28F008SZT, TMS28F008SZB, 28F800SZT, 28F800SZB 1048576 BY 8-BJT/524288 BY 16-BIT BOOT-BLOCK FLASH MEMORIES • • • • • • • • Organization. . . 1048576 By 8 Bits 524288 By 16 Bits
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OCR Scan
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TMS28F008SET,
TMS28F008SEB,
TMS28F800SET.
TMS28F800SEB
TMS28F008SZT,
TMS28F008SZB,
TMS28F800SZT,
TMS28F800SZB
8-BJT/524288
16-BIT
a14q
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PDF
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TSOP 56 LAYOUT
Abstract: tsop56 MARKing intel LH28F008SA LH28F016SA LH28F016SU 6P14 TSOP56 package tray LH28F800SU
Text: SHARP I SPEC No. ISSUE: May 15 1996 T o S P E C I F I C A T I O N S Product Type_8 M F l a s h F i l e M e m o r y _ LH28F800 SUT- 1 0 Model N o . _ L H F 8 0 S 0 7 _ ¿&This s p e c if ic a t io n s co n ta in s 44 pages in c lu d in g th e cover and appendix.
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OCR Scan
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LHF80S07
LH28F800SUT-10
AA1115
TSOP56
CV734
TSOP 56 LAYOUT
tsop56 MARKing intel
LH28F008SA
LH28F016SA
LH28F016SU
6P14
TSOP56 package tray
LH28F800SU
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PDF
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a13c
Abstract: F0006
Text: 8M 512K x 1 6 ,1M x 8 Flash Memory FEATURES 56-PIN TSOP TOP VIEW • User-Configurable x8 or x16 Operation • User-Selectable 3.3 V or 5 V Vcc • 5 V Write/Erase Operations (5 V Vpp) - No Requirement for DC/DC Converter to Write/Erase • 70 ns Maximum Access Time
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OCR Scan
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LH28F008SA
56-PIN
J63428
T96107
a13c
F0006
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PDF
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LH28F
Abstract: bt12 bl70
Text: FLASH MEMORY j _ ☆ New product • FLASH MEMORIES ★ Underdevelopment ♦ Features • Smart voltage technology provides the most flexible voltage solution (from 3.3 V single to 5 V single, and to the dual voltage-3.3 V/5 V, 3.3 V/12 V, 5 V/12 V for wider application from battery operated PDAs to industrial
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORIES \ Flash Memories • Symmetrical Block Sm artVoltage Flash Memories S up p ly vo lta g e C a p a c ity Bit configuration sE efbyte“ i ^words / O p erating tem p. M odel No. Vcc A c c e ss tim e V fC ) R e m a rks (ns) 70 85 90 100 120 150170
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OCR Scan
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64k-byte
LH28F002SC-L
LH28F002SCH-L
64k-byte
LH28F004SC-L
LH28F004SCH-L
mem40
LH28F016SUH
LH28F008SA-K
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PDF
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28F800
Abstract: BSR15 LH28F008SA LH28F016SA LH28F016SU LH28F800SU
Text: 8M 512K x 1 6 ,1M x 8 Flash Memory FEATURES 56-PIN TSOP TOP VIEW • User-Configurable x8 or x16 Operation • User-Selectable 3.3 V or 5 V Vcc • 5 V Write/Erase Operations (5 V Vpp) - No Requirement for DC/DC Converter to Write/Erase • 70 ns Maximum Access Time
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OCR Scan
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LH28F008SA
56-Pin,
LH28F800SU
56TSOP
TSOPQ56-P-1420)
LH28F800SU
TSQP056-P-1420)
LH28F800SUT-70
56-pin
28F800
BSR15
LH28F008SA
LH28F016SA
LH28F016SU
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PDF
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diagram circuits power supply APS 283
Abstract: TSOP 56 LAYOUT TSOP56 08001H tsop56 MARKing intel TSOP56 package tray
Text: LHF80S06 ; 1 28F800SU R-70 8 Mbit 512 Kbit x 16,1 Mbit x 8 5V Single Voltage Flash Memory CONTENTS PAGE FEATURES. CONTENTS PAGE 4.0 BUS OPERATIONS, COMMANDS 1.0 INTRODUCTION. 3 AND STATUS REGISTER DEFINITIONS. 10
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OCR Scan
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LHF80S06
F800SU
fllfl07Tfl
LHFB0S06
LH28F800SUR-70
boP56-P-1420
AA1113
TSOP56
1420TCS
diagram circuits power supply APS 283
TSOP 56 LAYOUT
TSOP56
08001H
tsop56 MARKing intel
TSOP56 package tray
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PDF
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Untitled
Abstract: No abstract text available
Text: 1 6 OSGED-L1 0 7 / 1 5 / 9 8 8 : 0 8 PM Page 1 SHARP LH28F160SGED-L10 LH28F160SGED-L10 16 M-bit 512 kB x 16 x 2-Bank SmartVoltage Dual Work Flash Memory DESCRIPTION • Enhanced automated suspend options The LH28F160SGED-L10 Dual W ork flash memory with Sm artVoltage technology is a high-density,
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OCR Scan
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LH28F160SGED-L10
LH28F160SGED-L10
LH28F160SGEDL10
28F160SG
48-pin
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PDF
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IR2E01
Abstract: LR4087 LZ8420M LZ9GG13 LI3160 IR2C36 LZ2423A SM8205 LZ9GG13M LR39901
Text: Index Model No. A R M 7 D C PU C o re B i-C M O S 1 28 4 0 ,4 2 C 62 IR 3 Y 1 2 A 50 LH1532 49 LH 531V 00 2.4 IR 2 E 2 8 62 IR 3 Y 1 4 50 LH1536 49 LH 532000B 3,4 IR 2 E 2 9 62 IR 3 Y 1 5 50 LH 1540A 49 L H 5 3 2 00 0 B -1 3,4 IR 2 E 3 0 62 IR 3 Y 1 6 50
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OCR Scan
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IR3Y21
LH1532
LH1536
LH1548
LH1549
LH1555
LH1556
LH1559
LH1560
LH1562
IR2E01
LR4087
LZ8420M
LZ9GG13
LI3160
IR2C36
LZ2423A
SM8205
LZ9GG13M
LR39901
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PDF
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