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    onsemi CAT28C16AL20

    IC EEPROM 16KBIT PARALLEL 24DIP
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    onsemi CAT28C16AW20

    IC EEPROM 16KBIT PARALLEL 24SOIC
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    onsemi CAT28C16AX20

    IC EEPROM 16KBIT PARALLEL 24SOIC
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    onsemi CAT28C16AG20

    IC EEPROM 16KBIT PARALLEL 32PLCC
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    onsemi CAT28C16AXI20

    IC EEPROM 16KBIT PARALLEL 24SOIC
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    Rochester Electronics CAT28C16AXI20 1 1
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    28C16A Datasheets (237)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    28C16A Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C16A Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C16A Microchip Technology 16K (2Kx8) CMOS EPROM Original PDF
    28C16A-15B/UA Microchip Technology 16Kbit (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C16A-15B/UB Microchip Technology 16Kbit (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C16A-15B/UC Microchip Technology 16Kbit (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C16A-15B/XA Microchip Technology 16Kbit (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C16A-15B/XB Microchip Technology 16Kbit (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C16A-15B/XC Microchip Technology 16Kbit (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C16A-15E/J Microchip Technology 16Kbit (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C16A-15E/K Microchip Technology 16Kbit (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C16A-15E/L Microchip Technology 16Kbit (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C16A-15E/P Microchip Technology 16Kbit (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C16A15I/J General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C16A-15I/J Microchip Technology 16Kbit (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C16A15I/K General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C16A-15I/K Microchip Technology 16Kbit (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C16A-15I/L Microchip Technology 16k (2k x 8) CMOS EEPROM Original PDF
    28C16A-15I/L Microchip Technology 16K (2Kx8) CMOS EEPROM Original PDF
    28C16A15I/L General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    ...

    28C16A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    28C16A

    Abstract: No abstract text available
    Text: 28C16A 16K 2K x 8 CMOS EEPROM 30 NC 32 Vcc 31 WE 2 NC 1 NU 5 29 A8 6 28 A9 7 27 NC 8 9 10 26 NC 25 OE 24 A10 20 19 21 I/O6 18 22 I/O7 13 17 23 CE 12 16 11 15 Vcc A8 A6 A9 A5 WE A4 OE A3 A10 A2 CE A1 I/O7 A0 I/O6 NC I/O5 I/O0 I/O4 I/O3 14 24 23 22 21 20 19


    Original     		PDF 28C16A DS11125G-page 28C16A

    Untitled

    Abstract: No abstract text available
    Text: 28C16A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 32 Vcc 31 WE 2 NC 1 NU 4 A7 3 NC 5 29 A8 6 28 A9 7 27 NC 8 9 10 26 NC 25 OE 24 A10 20 19 21 I/O6 18 22 I/O7 13 17 23 CE 12 16 11 15 Vcc A8 A6 A9 A5 WE A4 OE A3 A10 A2 CE A1 I/O7 A0 I/O6 NC


    Original     		PDF 28C16A Time--150 Time--200 24-pin 32-pin

    200B

    Abstract: 28C16A DK-2750 RG41
    Text: 28C16A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 32 Vcc 31 WE 2 NC 1 NU 4 A7 3 NC 5 29 A8 6 28 A9 7 27 NC 8 9 10 26 NC 25 OE 24 A10 20 19 21 I/O6 18 22 I/O7 13 17 23 CE 12 16 11 15 Vcc A8 A6 A9 A5 WE A4 OE A3 A10 A2 CE A1 I/O7 A0 I/O6 NC


    Original     		PDF 28C16A 200B 28C16A DK-2750 RG41

    Untitled

    Abstract: No abstract text available
    Text: 28C16A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 32 Vcc 31 WE 2 NC 1 NU 4 A7 3 NC 5 29 A8 6 28 A9 7 27 NC 8 9 10 26 NC 25 OE 24 A10 20 19 21 I/O6 18 22 I/O7 13 17 23 CE 12 16 11 15 Vcc A8 A6 A9 A5 WE A4 OE A3 A10 A2 CE A1 I/O7 A0 I/O6 NC


    Original     		PDF 28C16A Time--150 Time--200 24-pin 32-pin DS11125I-page

    28C16A DATASHEET

    Abstract: No abstract text available
    Text: 28C16A 16K 2K x 8 CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C16A is a CMOS 16K non-volatile electrically Erasable PROM. The 28C16A is accessed like a static RAM for the read or write cycles without the need of external components. During a “byte write”, the address and data are latched


    Original     		PDF 28C16A 28C16A DS11125F-page 28C16A DATASHEET

    Untitled

    Abstract: No abstract text available
    Text: Obsolete Device 28C16A 16K 2K x 8 CMOS EEPROM  2004 Microchip Technology Inc. 30 NC 32 Vcc 31 WE 2 NC 1 NU 4 A7 3 NC 5 29 A8 6 28 A9 7 27 NC 8 9 10 26 NC 25 OE 24 A10 20 19 21 I/O6 18 22 I/O7 13 17 23 CE 12 16 11 15 Vcc A8 A6 A9 A5 WE A4 OE A3 A10 A2


    Original     		PDF 28C16A D-85737 NL-5152

    CAT28C16A

    Abstract: No abstract text available
    Text: 28C16A 16K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 200 ns ■ End of Write Detection: DATA Polling ■ Low Power CMOS Dissipation: ■ Hardware Write Protection –Active: 25 mA Max. –Standby: 100 µA Max. ■ CMOS and TTL Compatible I/O


    Original     		PDF CAT28C16A 16K-Bit CAT28C16A 28C16A 500/Reel 200ns 28C16A CAT28C16ANI-20T

    palce16v8 programming algorithm

    Abstract: PH29EE010 ATMEL 620 93c46 EPROM NMC27C512AQ atmel 130 24c02 EP320I gal16v8 stag orbit 32 device list ph29ee010-xx gal16v8 programming
    Text: Datum 18.11.1998 aus www.stagusa.com Orbit 48 Device Support List Version 25.0 Note ALL PLDs require Orbit 48 PLD Module Please consult device specific information at the end of this list. Stag Programmers Ltd. Silver Court, Watchmead, Welwyn Garden City, Herts AL7 1LT, U.K.


    Original     		PDF PALCE29M16H-XX PALCE29MA16H-XX PALLV22V10/Z PALCE16V8H/Q/Z-XX PALLV16V8/Z-XX PALLV16V8Z-XX PALCE16V8HD-XX PALCE16V8 palce16v8 programming algorithm PH29EE010 ATMEL 620 93c46 EPROM NMC27C512AQ atmel 130 24c02 EP320I gal16v8 stag orbit 32 device list ph29ee010-xx gal16v8 programming

    CAT28C16A

    Abstract: 1N914 28C16A
    Text: 28C16A 28C16A 16K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: 200 ns ■ End of Write Detection: DATA Polling ■ Low Power CMOS Dissipation: ■ Hardware Write Protection –Active: 25 mA Max. –Standby: 100 µA Max. ■ CMOS and TTL Compatible I/O


    Original     		PDF CAT28C16A 16K-Bit CAT28C16A 300-T 1N914 28C16A

    Device-List

    Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
    Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which


    Original     		PDF ALL-11 Z86E73 Z86E83 Z89371 ADP-Z89371/-PL Z8E000 ADP-Z8E001 Z8E001 Device-List cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2

    Untitled

    Abstract: No abstract text available
    Text: PSTSIIgI EEPROMS M ic r o c h ip Parallel EEPROM Selection Guide CMOS Parallel EEPROMs Access Time ns Icc (Active/ Standby) 4K bits (512x8) 150/200/250 30mA/100nA 16K bits (2K X 8) 150/200/250 30 mAflOO nA Device Density/ Organization 28C04A 28C16A Byte


    OCR Scan     		PDF 30mA/100nA A/100 A/100 28C04A 28C16A

    F91300 MASSY

    Abstract: No abstract text available
    Text: MICROCHIP TECHNOLOGY INC blE D • blD32Dl 000b514 HTT ■fICHP T - 4 & - U - Z 7 28C16A & M icroch ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation


    OCR Scan     		PDF blD32Dl 000b514 150ns 10OnA DS11125C-8 F91300 MASSY

    Untitled

    Abstract: No abstract text available
    Text: & 28C16A Microchip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 100nA Standby • Fast Byte Write Time— 200|is or 1ms • Data Retention >10 years


    OCR Scan     		PDF 28C16A 150ns 100nA DS11125C-6 11125C 28C16AF DS11125C-8 200ns

    tce 1994

    Abstract: L0523 28C16A
    Text: M 28C16A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 m A Active - 100 (iA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >10 years • High Endurance-Minimum 104 Erase/Write Cycles


    OCR Scan     		PDF 28C16A 30mAActive 24-pin 32-pin 28-pin DS11125E-Ã tce 1994 L0523

    Untitled

    Abstract: No abstract text available
    Text: 28C16A & M icro ch ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation —30mA Active — 100nA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years


    OCR Scan     		PDF 150ns --30mA 100nA 200ns --32-Pin DS11125A-6 28C16A 28C16AF 200ns DS11125A-8

    Untitled

    Abstract: No abstract text available
    Text: 28C16A 16K 2K x 8 CMOS EEPROM FEATURES PACKAGETYPES h. o o => 8 |!±j o • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years


    OCR Scan     		PDF 28C16A 24-pin 32-pin S-016 DS00049M-page

    Untitled

    Abstract: No abstract text available
    Text: $ M 28C16A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES 24 D V ce A5C 3 M C 4 22 H A 9 A3C S 20 23 D A B 21 D W E A2C 6 o 18 3 A 1 0 A1C 7 AO C 8 5 16 : c e 17 D l/0 7 vooC 9 v o i z 10 16 3 1 /0 6 15 D i/ o s I/0 2 C 11 14 H U 0 4 VssC 12 13 ] 1/03 A6


    OCR Scan     		PDF 28C16A OS11125H-page 28C16A 8x20mm DS11125H-page

    Untitled

    Abstract: No abstract text available
    Text: & 28C16A Microchip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation —30mA Active — 1OOjiA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years


    OCR Scan     		PDF 28C16A 150ns 200ns DS11125C-6 28C16AF DS11125C-8

    Untitled

    Abstract: No abstract text available
    Text: blD32Gl DGD7S2b DQñ « M C H R ti3 E D MICROCHIP TECHNOLOGY INC 28C16A Microchip 16K 2K X 8 CMOS Electrically Erasable PROM FEATURES address and data are latched internally, freeing the microprocessor address and data bus for other opera­ tions. Following the initiation of write cycle, the device


    OCR Scan     		PDF blD32Gl 28C16A DS11125D-page bl03501 150nsec

    Untitled

    Abstract: No abstract text available
    Text: 28C16A M ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • C M OS Technology for Low Power Dissipation - 30 m A Active - 100 |iA Standby • Fast Byte W rite Time— 200 [is or 1 ms • D ata R etention >200 years • High E ndurance-M inim um 104 Erase/Write Cycles


    OCR Scan     		PDF 28C16A 24-pin 8x20mm DS11125G-page

    Untitled

    Abstract: No abstract text available
    Text: 28C16A M ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte Write Time—200 |xs or 1 ms • Data Retention >10 years


    OCR Scan     		PDF 28C16A 24-pin 32-pinossibly DS11125E-page

    28C16A

    Abstract: No abstract text available
    Text: 28C16A 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 104 Erase/Write Cycles


    OCR Scan     		PDF 28C16A 24-pin 32-pin MS-016AE DS00049M-page

    Untitled

    Abstract: No abstract text available
    Text: $ 28C16A M ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 jiA Standby • Fast Byte Write Time— 200 (is or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles


    OCR Scan     		PDF 28C16A 24-pin 32-pin 28-ming DS11125E-page 28C16AF 8x20mm

    L0615

    Abstract: No abstract text available
    Text: 28C16A M ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast R ead Access Tim e— 1 50 ns • C M O S Technology for Low Pow er Dissipation - 3 0 m A Active - 100 ^ A Standby A7 C• 1 23 H a s A s ti 3 22 3 A 9 A4C 4 21 3 W É A3 C 5


    OCR Scan     		PDF 28C16A DS11125E-page L0615