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    28C17A Price and Stock

    Rochester Electronics LLC CAT28C17AK20

    IC EEPROM 16KBIT 8SOIC
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    DigiKey CAT28C17AK20 Bulk 77
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    Rochester Electronics LLC CAT28C17AW20

    IC EEPROM 16KBIT 28SOIC
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    DigiKey CAT28C17AW20 Bulk 77
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    Rochester Electronics LLC CAT28C17AWI-20T

    CAT28C17 - 16-KBit Parallel EEPR
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    DigiKey CAT28C17AWI-20T Bulk 75
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    onsemi CAT28C17AWI-20T

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    Avnet Americas CAT28C17AWI-20T Bulk 4 Weeks 91
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    Rochester Electronics CAT28C17AWI-20T 1,000 1
    • 1 $4.04
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    onsemi CAT28C17AK20

    - Bulk (Alt: CAT28C17AK20)
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    Avnet Americas CAT28C17AK20 Bulk 4 Weeks 92
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    Newark CAT28C17AK20 Bulk 100
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    Rochester Electronics CAT28C17AK20 628 1
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    Find more 28C17A price and stock on Findchips.com

    28C17A Datasheets (239)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    28C17A Microchip Technology 16K (2Kx8) CMOS EPROM Original PDF
    28C17A Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15B/UA Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15B/UB Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15B/UC Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15B/XA Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15B/XB Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15B/XC Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15E/J Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15E/K Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15E/L Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15E/P Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15E/SO Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A-15I/J Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A15I/J General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17A-15I/K Microchip Technology 16K (2K x 8) CMOS EEPROM Original PDF
    28C17A15I/K General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C17A-15I/L Microchip Technology 16k (2k x 8) CMOS EEPROM Original PDF
    28C17A-15I/L Microchip Technology 16K (2Kx8) CMOS EEPROM Original PDF
    28C17A15I/L General Semiconductor 16K (2K x 8) CMOS Electrically Erasable PROM Scan PDF
    ...

    28C17A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    200B

    Abstract: 28C17A DK-2750 RG41
    Text: 28C17A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7


    Original     		PDF 28C17A 200B 28C17A DK-2750 RG41

    tce 1994

    Abstract: No abstract text available
    Text: 28C17A 16K 2K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 29 A8 28 A9 27 NC 26 NC PLCC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 21 I/O6 17 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3 16 DIP/ SOIC


    Original     		PDF 28C17A Time--150 Time--200 DS11127F-page tce 1994

    28C17A

    Abstract: No abstract text available
    Text: Obsolete Device 28C17A 16K 2K x 8 CMOS EEPROM  2004 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10


    Original     		PDF 28C17A D-85737 NL-5152 28C17A

    Untitled

    Abstract: No abstract text available
    Text: 28C17A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7


    Original     		PDF 28C17A Time--150 Time--200 32-Pin DS11127I-page

    Untitled

    Abstract: No abstract text available
    Text: 28C17A 16K 2K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3 14 28 27


    Original     		PDF 28C17A DS11127G-page

    Untitled

    Abstract: No abstract text available
    Text: 28C17A 16K 2K x 8 CMOS EEPROM  1998 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7


    Original     		PDF 28C17A Time--150 Time--200 32-Pin

    Untitled

    Abstract: No abstract text available
    Text: Obsolete Device 28C17A 16K 2K x 8 CMOS EEPROM  2004 Microchip Technology Inc. 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 NC 29 A8 28 A9 27 NC 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 16 21 I/O6 15 Vcc WE NC A8 A6 5 A9 A5 6 NC A4 7 A3 8 OE A10 A2 9 A1 10


    Original     		PDF 28C17A D-85737 NL-5152

    Untitled

    Abstract: No abstract text available
    Text: b3E I> • bl032Gl QGG7S33 E46 IP1CHP MICROCHIP TECHNOLOGY INC 28C17A Microchip 16K 2K X 8 CMOS Electrically Erasable PROM FEATURES need of external components. During a “byte write”, the address and data are latched internally, freeing the microprocessor address and data bus for other opera­


    OCR Scan     		PDF bl032Gl QGG7S33 28C17A polS11127D-page bl032Ql 28C17AF 200ns DS11127D-page

    Untitled

    Abstract: No abstract text available
    Text: $ M 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM PACKAGE TYPE FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Pow er Dissipation - 30 m A Active - 100 (iA Standby • Fast Byte Write Time— 200 us or ms • Data Retention >10 years


    OCR Scan     		PDF 28C17A DS11127E-page

    Untitled

    Abstract: No abstract text available
    Text: 28C17A M icro c h ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 100|xA Standby • Fast Byte Write Time— 200n.s or 1ms • Data Retention >10 years


    OCR Scan     		PDF 28C17A 150ns DS11127C-6 DS11127C-8 200ns

    Untitled

    Abstract: No abstract text available
    Text: M $ 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time—200 ¡is or 1 ms • Data Retention >200 years • High Endurance- Minimum 104 Erase/Write Cycles


    OCR Scan     		PDF ROY/B57C 1/01C 28C17A Time--200 DS11127H-page7-23 28C17A 8x20mm

    200B

    Abstract: 28C17A
    Text: ^ÊÊÊÊÈ.^- & M i c r o c h i p 28C17A » 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years


    OCR Scan     		PDF 28C17A 32-Pin MS-016AE DS00049M-page 200B 28C17A

    Untitled

    Abstract: No abstract text available
    Text: M i c r o c h i p 28C17A » 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 104 Erase/Write Cycles


    OCR Scan     		PDF 28C17A 32-Pin S-016 DS00049M-page

    Untitled

    Abstract: No abstract text available
    Text: M 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM PACKAGE TYPE FEATURES • Fast Read A ccess Time— 150 ns • CMOS Technology fo r Low P ow er Dissipation - 30 m A Active - 100 (iA S tandby • Fast Byte W rite Time— 200 |xs o r 1 ms • Data Retention >10 years


    OCR Scan     		PDF 28C17A DS11127E-page

    Untitled

    Abstract: No abstract text available
    Text: 28C17A M ic r o c h ip 16K 2K x 8 CMOS EEPROM PACKAGE TYPE FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 jiA Standby • Fast Byte Write Time— 200 ps or 1 ms • Data Retention >200 years


    OCR Scan     		PDF 28C17A 32-updates. DS11127F L103201

    Untitled

    Abstract: No abstract text available
    Text: 28C17A M icro ch ip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 100|oA Standby • Fast Byte Write Time— 200ns or 1 ms • Data Retention >10 years


    OCR Scan     		PDF 28C17A 150ns 200ns 28C17A DS11127C-7 28C17AF 200ns

    28C17A

    Abstract: No abstract text available
    Text: ^ÊÊÊÊÈ.^- & M ic r o c h i p 28C17A » 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >200 years


    OCR Scan     		PDF 28C17A 32-Pin MS-016AE DS00049M-page

    Untitled

    Abstract: No abstract text available
    Text: 28C17A DICE FORM Microchip 16K 2K X 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • 250ns Access Time • CMOS Technology for Low Power Dissipation — 30mA Active — 100|iA Standby • Fast Byte Write Time— 1ms • Automatic Write Operation


    OCR Scan     		PDF 28C17A 250ns 28C17A The28C17A DS11134A-6 DS11134A-8

    10F-1C

    Abstract: No abstract text available
    Text: JÊ Ë Ê È L * & 28C17A M ig z r o n c h ip i 16K 2K X 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |^A Standby • Fast Byte W rite Time— 200 |^s or 1 ms • Data Retention >200 years


    OCR Scan     		PDF 32-Pin DS111271-page 10F-1C

    28C17A

    Abstract: No abstract text available
    Text: M 28C17A ic r o c h ip 16K 2K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time—200 us or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles


    OCR Scan     		PDF 28C17A 32-Pin 28-Pin

    Untitled

    Abstract: No abstract text available
    Text: 28C17A M ic r o c h ip 16K 2K X 8 CMOS Electrically Erasable PROM need of external components. During a “byte write”, the address and data are latched internally, freeing the microprocessor address and data bus for other opera­ tions. Following the initiation of write cycle, the device


    OCR Scan     		PDF 28C17A 28C17AF DS11127D-page

    Untitled

    Abstract: No abstract text available
    Text: $ 28C17A M ic r o c h ip 16K 2K x 8 CMOS EEPROM • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 nA Standby • Fast Byte Write Time— 200 |is or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles


    OCR Scan     		PDF 28C17A 32-Pin 28C17AF 8x20mm 28C17A DS11127E-page

    Untitled

    Abstract: No abstract text available
    Text: & 28C17A Microchip 16K 2K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum The Microchip Technology Inc 28C17A is a CMOS 16K non-volatile electrically Erasable and Programm able Read Only Memory. The 28C17A is accessed like a


    OCR Scan     		PDF 28C17A 28C17A 28C17AF 26C17A

    Untitled

    Abstract: No abstract text available
    Text: 28C17A 16K-Bit CMOS E2PROM FEATURES Fast Read Access Times: 200 ns End of Write Detection: -D A T A Polling -R D Y /B D S Y Pin Low Power CMOS Dissipation: -A ctive: 25 mA Max. -S tan d b y: 100 jiA Max. Hardware Write Protection Simple Write Operation:


    OCR Scan     		PDF CAT28C17A 16K-Bit CAT28C17A CAT28C17A. 28C17A CAT28C17ANI-20TE7