winbond 25080
Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Text: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010
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2732B
27C100
27HB010
27C256
27HC64
27C128
27C040
7128A
winbond 25080
29F200BB
16LF648A
89V51RD2
18f252
89S51
National SEMICONDUCTOR GAL16V8
29sf040
12f675
29F400BB
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27C32
Abstract: 24c04 Atmel 27c301 atmel 24c02 39SF040 24C08 ATMEL dataman s4 27C101 Xicor 28256 eeprom 2864a
Text: Dataman S4 Programmer Device Support List Library Version 2.84 May 2001 8 Bit EPROMS, EEPROMS & Flash ROMS AMD 27010 2716B 2732B 27C010 27C100 27C512L 27HB010 28C256 28F256 29F002NBB 29F040 9716 9864-25 27128 27256 27512 27C020 27C128 27C64 2817A 28F010 28F512
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2716B
2732B
27C010
27C100
27C512L
27HB010
28C256
28F256
29F002NBB
29F040
27C32
24c04 Atmel
27c301
atmel 24c02
39SF040
24C08 ATMEL
dataman s4
27C101
Xicor 28256 eeprom
2864a
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Untitled
Abstract: No abstract text available
Text: KM28C64A/28C65A CMOS EEPROM 8 K x 8 Bit C M O S Electrically Erasable P R O M FEATURES GENERAL DESCRIPTION • Operating Tem perature Range — K M 28C64A/65A: Com mercial — KM 28C 64A I/65A I: Industrial • S im ple Byte W rite & Page W rite — Single TTL Level W rite Signal
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KM28C64A/KM28C65A
28C64A/65A:
I/65A
28C65A)
64-Byte
150ns
00f/Aâ
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41C1000
Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258
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41C256
41C257
41C258
41C464
41C466
41C1000
44C256
44C258
44C1002
TC51257
fujitsu 814100
TC 55464 toshiba
HN62304
hn623257
658128
816b
hn62324
M7202A
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Untitled
Abstract: No abstract text available
Text: 2231 CALLE DE LUNA, SANTA CLARA, CA 95054 Telephone: 408 748-7700 28C65A 8K x 8 BIT CMOS EEPROM DESCRIPTION FEATURES T h e C A T 2 8C 6 5A is a fast, low power, 5V-only C M O S E E P R O M requiring a simple interface for insystem programming. On-chip address and data
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CAT28C65A
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KM28C64A20
Abstract: KM28C64A-20
Text: KM28C64A/28C65A CMOS EEPROM 8 K /8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Tem perature Range — K M 28C64A/65A: Com mercial — KM 28C 64A I/65A I: Industrial • Sim ple Byte W rite & Page W rite — Single TTL Level W rite Signal
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KM28C64A/KM28C65A
28C64A/65A:
I/65A
28C65A)
64-Byte
150ns
1555H
KM28C64A20
KM28C64A-20
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • 7T L414E G G lb ö f lO TSS CMOS EEPROM KM28C64A/28C65A 8K x8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C64A/65A: Commercial — KM28C64AI/65AI: Industrial • Simple Byte Write & Page Write
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L414E
KM28C64A/KM28C65A
KM28C64A/65A:
KM28C64AI/65AI:
KM28C65A)
64-Byte
120ns
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Untitled
Abstract: No abstract text available
Text: 28C65A MICROELECTRONICS, INC. Excelle nce in E7 P R E L IM IN A R Y 8K X 8 CM O S Electrically Erasable PROM FEATURES The fully-automatic, 64-byte page-write allows the entire memory to be programmed in less than 0.65 sec. Internal latches, for address and data, free the system
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XL28C65A
64-byte
28C65A
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TEA 1511
Abstract: 28C65A CAT28C65A 28C65A-20
Text: CATALYST SEMICONDUCTOR S3E D • C A T A L Y S T 1.1 bat IS '0001034 5 ■ . S E M IC O N D U C T O R ,IN C . 2231 CALLE DE LUNA, SANTA CLARA, CA 950S4 Telephone: 408 748-7700 28C65A 8Kx 8 BIT CMOS EEPROM DESCRIPTION FEATURES The 28C65A is a fast, low power, 5V-only
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950S4
CAT28C65A
CAT28C65A
QDD1Q43
28C65A
TEA 1511
28C65A-20
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AT28C65
Abstract: 28C65A-20
Text: 28C65A/28C65AI 64K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: 150/200/250ns ■ Automatic Page Write Operation: -1 to 32 Bytes in 10ms -P a g e Load Timer ■ Low Power CMOS Dissipation: -A ctive: 30mA Max. -Standby: 100 iA Max. ■ End of W rite Detection:
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CAT28C65A/CAT28C65AI
64K-Bit
150/200/250ns
TheCAT28C65A/CAT28C65AI
CAT28C65A/
CAT28C65AI.
AT28C65
28C65A-20
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