Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    28DBM Search Results

    SF Impression Pixel

    28DBM Price and Stock

    Bimba Manufacturing Company LT-028-DBM

    Thruster, Linear Thruster Cylinder ; 9/16in Bore ; Stroke: 8 in; Double Acting | Bimba LT-028-DBM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-028-DBM Bulk 5 Weeks 1
    • 1 $76.49
    • 10 $76.49
    • 100 $76.49
    • 1000 $76.49
    • 10000 $76.49
    		Get Quote

    Bimba Manufacturing Company LT-3128-DBM

    Thruster, Linear Thruster Cylinder ; 2in Bore ; Stroke: 28 in; Double Acting ; | Bimba LT-3128-DBM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-3128-DBM Bulk 5 Weeks 1
    • 1 $279.45
    • 10 $279.45
    • 100 $279.45
    • 1000 $279.45
    • 10000 $279.45
    		Get Quote

    Bimba Manufacturing Company LT-3128-DBMQ

    Thruster, Linear Thruster Cylinder ; 2in Bore ; Stroke: 28 in; Double Acting ; | Bimba LT-3128-DBMQ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-3128-DBMQ Bulk 5 Weeks 1
    • 1 $279.45
    • 10 $279.45
    • 100 $279.45
    • 1000 $279.45
    • 10000 $279.45
    		Get Quote

    Bimba Manufacturing Company LT-3128-DBMT1

    Thruster, Linear Thruster Cylinder ; 2in Bore ; Stroke: 28 in; Double Acting ; | Bimba LT-3128-DBMT1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-3128-DBMT1 Bulk 5 Weeks 1
    • 1 $284.56
    • 10 $284.56
    • 100 $284.56
    • 1000 $284.56
    • 10000 $284.56
    		Get Quote

    Bimba Manufacturing Company LT-0428-DBMT1

    Thruster, Linear Thruster Cylinder ; 3/4in Bore ; Stroke: 28 in; Double Acting | Bimba LT-0428-DBMT1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-0428-DBMT1 Bulk 5 Weeks 1
    • 1 $149.3
    • 10 $149.3
    • 100 $149.3
    • 1000 $149.3
    • 10000 $149.3
    		Get Quote
    Find more 28DBM price and stock on Findchips.com

    28DBM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: AWT6309 HELP2TM AWS/KPCS CDMA 3.4V/28dBm Linear Power Amplifier Module Data Sheet - Rev 2.5 FEATURES • InGaP HBT Technology • High Efficiency: • 40 % @ +28 dBm output • 22 % @ +17 dBm output • Low Quiescent Current: 15 mA • Low Leakage Current in Shutdown Mode: <1 µA


    Original     		PDF V/28dBm AWT6309 AWT6309

    Untitled

    Abstract: No abstract text available
    Text: Coaxial Amplifier 50Ω ZHL-4240 Medium High Power 700 to 4200 MHz Features • wideband, 700-4200 MHz • high IP3, +30 dBm typ. • high gain, 40 dB min. • medium high power, 28dBm min Applications Connectors SMA • communication systems • instrumentation


    Original     		PDF 28dBm ZHL-4240 ZHL-4240

    9421

    Abstract: FPD2250SOT89
    Text: EB2250SOT89BB FPD2250SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured at 900MHz 28dBm Output Power 17dB Gain 39dBm OIP3 @ 18dBm Pout Total Power Noise Figure 1.2dB Bias 5V, 300mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively


    Original     		PDF EB2250SOT89BB FPD2250SOT89 900MHz 28dBm 39dBm 18dBm 300mA FPD2250SOT89; 2250m 30mil 9421

    Solder Paste, Indium 5.1 AT

    Abstract: No abstract text available
    Text: RMPA2259 28dBm WCDMA Power Amplifier Module General Description Features The RMPA2259 power amplifier module PAM is designed for WCDMA applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a low power mode to reduce


    Original     		PDF RMPA2259 28dBm RMPA2259 Solder Paste, Indium 5.1 AT

    ECJ-1VB1H102K

    Abstract: RMPA0966
    Text: PRELIMINARY RMPA0966 i-Lo WCDMA Band V Power Amplifier Module tm Features General Description • 42% CDMA/WCDMA efficiency at +28dBm Pout The RMPA0966 Power Amplifier Module PAM is Fairchild’s latest innovation in 50Ω matched, surface mount modules targeting Cellular CDMA/WCDMA/HSDPA,


    Original     		PDF RMPA0966 28dBm ECJ-1VB1H102K

    Untitled

    Abstract: No abstract text available
    Text: FLM1213-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: hadd = 24% (Typ.) IM3 = -45dBc@Po = 28dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50W


    Original     		PDF FLM1213-12F -45dBc 28dBm FLM1213-12F FCSI0598M200

    power rf

    Abstract: No abstract text available
    Text: FC7214 Future Communications Integrated circuit Inc. Power Amplifier Module for KPCS CDMA FEATURES resistance. FC7214 is manufactured with an advanced InGaP HBT MMIC process. l Single-mode operation up to 28dBm l Low quiescent current: 40mA l Optimized for a 50-Ω system


    Original     		PDF FC7214 FC7214 50-ohm 28-dBm power rf

    GRM1555C1HR50B

    Abstract: LQG15HN12NJ02D rx193
    Text: DRAFT RF3165 DRAFT RF31653V 1750 MHz WCDMA Linear Power Amplifier Module 3V 1750MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE Input/Output Internally Matched@50Ω „ 28dBm Linear Output Power „ 42% Peak Linear Efficiency „ 28dB Linear Gain „ -41dBc ACLR @ ±5MHz


    Original     		PDF RF31653V 1750MHZ RF3165 16-Pin, 28dBm -41dBc DS061201 GRM1555C1HR50B LQG15HN12NJ02D rx193

    3g hsdpa signal Schematic Diagram

    Abstract: LQG15HN12NJ02D
    Text: RF3165 RF31653V 1750 MHz WCDMA Linear Power Amplifier Module 3V 1750MHZ W-CDMA LINEAR POWER AMPLIFIER MODULE Input/Output Internally Matched@50Ω „ 28dBm Linear Output Power „ 42% Peak Linear Efficiency „ 28dB Linear Gain „ -41dBc ACLR @ ±5MHz „ HSDPA Capable


    Original     		PDF RF31653V RF3165 1750MHZ 16-Pin, 28dBm -41dBc RF3165 DS061201 3g hsdpa signal Schematic Diagram LQG15HN12NJ02D

    29-FUNCTION

    Abstract: hdr1x8
    Text: RF6559 RF65594.0V to 4.5V, 915MHz ISM BAND TRANSMIT/RECEIVE MODULE 4.0V TO 4.5V, 915MHZ ISM BAND TRANSMIT/RECEIVE MODULE Tx Output Power: 28dBm  Tx Gain: 42dB   Integrated Single Port Rx/Tx 50 Bi-directional Transceiver Interface LNA with Bypass Mode


    Original     		PDF RF65594 915MHz RF6559 28-pin, 28dBm 868MHz/915MHz DS111208 29-FUNCTION hdr1x8

    AWT6302

    Abstract: No abstract text available
    Text: AWT6302 PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • High Efficiency: 39% • Low Quiescent Current: 48 mA • Low Leakage Current in Shutdown Mode: <1 µA • VREF = +2.85 V +2.75 V min over temp


    Original     		PDF AWT6302 V/28dBm AWT6302

    GTO MODULE

    Abstract: ECJ-1VB1H102K SN63 SN96 Solder Paste, Indium 5.8
    Text: PRELIMINARY RMPA1766 i-Lo tm WCDMA Band IV Power Amplifier Module Features General Description • 40% WCDMA efficiency at +28dBm Pout The RMPA1766 Power Amplifier Module PAM is Fairchild’s latest innovation in 50Ω matched, surface mount modules targeting UMTS/WCDMA/HSDPA


    Original     		PDF RMPA1766 28dBm 16dBm) 16dBm GTO MODULE ECJ-1VB1H102K SN63 SN96 Solder Paste, Indium 5.8

    FLM1213-12F

    Abstract: No abstract text available
    Text: FLM1213-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 40.5dBm Typ. High Gain: G1dB = 5.5dB (Typ.) High PAE: ηadd = 24% (Typ.) IM3 = -45dBc@Po = 28dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		PDF FLM1213-12F -45dBc 28dBm FLM1213-12F FCSI0598M200

    AWT6112

    Abstract: No abstract text available
    Text: AWT6112 Cellular Dual Mode AMPS/CDMA 3.4V/28dBm Linear Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • • • • • • • • InGaP HBT Technology High Efficiency: 49% AMPS, 38% CDMA Low Quiescent Current: 50 mA Low Leakage Current in Shutdown Mode: <5 µA


    Original     		PDF AWT6112 V/28dBm AWT6112

    AWT6112

    Abstract: No abstract text available
    Text: AWT6112 Cellular Dual Mode AMPS/CDMA 3.4V/28dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • InGaP HBT Technology • High Efficiency: 54% AMPS, 38% CDMA • Low Quiescent Current: 50 mA • Low Leakage Current in Shutdown Mode: <5 mA


    Original     		PDF V/28dBm AWT6112 AWT6112

    Untitled

    Abstract: No abstract text available
    Text: AWT6138 HELP PCS/CDMA 3.4V 28dBm Linear Power Amplifier Module TM PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • High Efficiency: 40% at +28 dBm 22% at +16 dBm 15% at +7 dBm AW T • Low Quiescent Current: 16 mA • Low Leakage Current in Shutdown Mode: <1 µA


    Original     		PDF AWT6138 28dBm

    Untitled

    Abstract: No abstract text available
    Text: AWT6271 HELP Cellular/WCDMA 3.4V/28dBm Linear Power Amplifier Module TM PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • InGaP HBT Technology • High Efficiency: 45 % @ POUT = +28 dBm 20 % @ POUT = +16 dBm AWT6271 15 % @ POUT = +7 dBm • Low Quiescent Current: 16 mA


    Original     		PDF AWT6271 V/28dBm

    MSC 5518

    Abstract: No abstract text available
    Text: LX5518 TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ Advanced InGaP HBT 2.4-2.5GHz Operation Single-Polarity 3-5V Supply Power Gain ~ 30 dB 26dBm @3%EVM,802.11g/5V 24dBm @3.5%EVM,80211g/3.3V 28dBm @CCK,802.11b/5V


    Original     		PDF LX5518 26dBm 11g/5V 24dBm 80211g/3 28dBm 11b/5V 27dBm 11b/3 28dBm/5V MSC 5518

    Untitled

    Abstract: No abstract text available
    Text: Coaxial Amplifier 50Ω ZHL-4240 Medium High Power 700 to 4200 MHz Features • wideband, 700-4200 MHz • high IP3, +38dBm typ. • high gain, 40 dB min. • medium high power, 28dBm min Applications • communication systems • instrumentation • satellite dist./GPS/PCS


    Original     		PDF 38dBm 28dBm ZHL-4240 ZHL-4240

    Untitled

    Abstract: No abstract text available
    Text: R A -0011 AFONICS - InGaAs PIN/TIA - 1GHz minimum bandwidth - Differential output and AGC -R esp onsivit y ttypic ypic ally 3300 V/W Resp esponsivit onsivity ypically - Typic al sensitivit y -28dBm ypical sensitivity -M inimum o v er load -3dBm Minimum ov


    Original     		PDF -28dBm

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA JS9P05-AS FEATURES: •H IG H POWER P1dB=28dBm ■C H IP FORM IHIGH GAIN GldB= f = 38GHz RF PERFORMANCE SPECIF CATIONS CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB


    OCR Scan     		PDF 28dBm JS9P05-AS 38GHz

    Untitled

    Abstract: No abstract text available
    Text: Multiplier Diode Selection Guide 2.0 5.0 10 Output Frequency Range GHz 4-66 20 Multiplier Diode Selection Guide Device Family Available Output Power vs. Output Frequency Low Oder Multiplier N«s3 3 5 d b rT ^ ^ _ 28dbm DVA6735 ^36dbm 38dbn^^^ DVA6736 42dbm


    OCR Scan     		PDF 28dbm DVA6735 38dbn^ 36dbm DVA6736 42dbm DVA6737 DVA6738 D5244thru D5259

    Untitled

    Abstract: No abstract text available
    Text: FLM1213-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 40.5dBm Typ. High Gain: G ^ b = 5.5dB (Typ.) High PAE: r!add = 24% (Typ.) IM3 = -45dBc@Po = 28dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM1213-12F -45dBc 28dBm FLM1213-12F FCSI0598M200

    FLM5964

    Abstract: No abstract text available
    Text: n FLM5964-8D Internally Matched Power GaAs F E Ts . I FEATURES • High Output Power: P-idg = 39.0dBm Typ. • High Gain: G -j^B = 8.0dB (Typ.) • High PAE: r iadd = 30% (Typ.) • Low IM 3 = -45dBc@Po = 28dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q


    OCR Scan     		PDF FLM5964-8D -45dBc 28dBm FLM5964-8D FLM5964