Untitled
Abstract: No abstract text available
Text: TG2216TU TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2216TU RF SPDT Switch Antenna switches for Bluetooth Class1 , wireless LAN and PHS Filter switching for mobile communication Features • Low insertion Loss: LOSS = 0.5dB typ. @1.0 GHz = 0.7dB (typ.) @2.5 GHz
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TG2216TU
28dBmW
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Untitled
Abstract: No abstract text available
Text: TG2216TU TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2216TU RF SPDT Switch Antenna switches for Bluetooth Class1, wireless LAN and PHS Filter switching for mobile communication Features • Low insertion Loss: LOSS = 0.5dB typ. @1.0 GHz · High isolation: ISL = 25dB (typ.) @1.0 GHz
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TG2216TU
28dBmW
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TG2216TU
Abstract: No abstract text available
Text: TG2216TU TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2216TU RF SPDT Switch Antenna switches for Bluetooth Class1, wireless LAN and PHS Filter switching for mobile communication Features • Low insertion Loss: LOSS = 0.5dB typ. @1.0 GHz · High isolation: ISL = 25dB (typ.) @1.0 GHz
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TG2216TU
28dBmW
TG2216TU
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S-AV34
Abstract: No abstract text available
Text: S-AV34 TOSHIBA RF POWER AMPLIFIER MODULE S-AV34 ○RF POWER AMPLIFIER MODULE for VHF BAND •for digital use MAXIMUM RATINGS Tc = 25℃, ZG = ZL = 50Ω CHARACTERISTIC SYMBOL TEST CONDITION RATING UNIT DC Supply Voltage VDD VGG =0V, Pi =0mW 20 V DC Supply Voltage
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S-AV34
VDD10
S-AV34
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MIG20J501L
Abstract: MIG30J501L MIG30J5 TG2013F TB62201AF MIG30J50 GAA 044 VTCMOS MIG20J501
Text: ご注意 本資料に掲載されております製品※の一部に2004 年 10 月 1 日付けで三菱 電機株式会社へ譲渡された製品があります。詳しくは弊社営業窓口までお問 い合わせ下さい。 ※対象製品：大容量モジュール事業 自動車用途、高耐圧製品を除く
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IMT-2000
3G-324
16Mbit
316bit
824849MHz
27dBmW
TG2012F
17501780MHz
MIG20J501L
MIG30J501L
MIG30J5
TG2013F
TB62201AF
MIG30J50
GAA 044
VTCMOS
MIG20J501
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TB62501F
Abstract: tb62501 tb6808f TA78033LS TA1319AP TB62207BFG TD62C854AF ta1319 TA7804LS TB62207
Text: General-Purpose Linear ICs Operational Amplifier ICs & Comparator ICs z 118 Intelligent Power Devices IPD z 122 Interface Drivers z 125 Motor Drivers z 130 Power Supply ICs z 134 Small-Signal MMICs (High-Frequency Cell-pack) z 142 117 Operational Amplifier ICs & Comparator ICs
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TA75S393F
TA75S01F
TA75S558F
22dBmW
TG2213S
17dBmW
TG2214S
TG2213S.
TG2216TU
TB62501F
tb62501
tb6808f
TA78033LS
TA1319AP
TB62207BFG
TD62C854AF
ta1319
TA7804LS
TB62207
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Untitled
Abstract: No abstract text available
Text: TG2014CS TOSHIBA RF Power Amplifier TG2014CS 1700/1900 MHz Band Amplifier Applications US/K-PCS (CDMA • GaAs HBT MMIC (Include Bias circuit type) • Output Power: Po = 28.0 dBmW (min) • Gain: Gp = 24 dB (min) • Drain Efficiency: 37% (typ.) • Include bias circuit with power control
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TG2014CS
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Untitled
Abstract: No abstract text available
Text: TG2216TU TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2216TU RF SPDT Switch Antenna switches for Bluetooth Class1, wireless LAN and PHS Filter switching for mobile communication Features • Low insertion Loss: LOSS = 0.5dB typ. @1.0 GHz · High isolation: ISL = 25dB (typ.) @1.0 GHz
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TG2216TU
28dBmW
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Untitled
Abstract: No abstract text available
Text: TG2216TU TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2216TU RF SPDT Switch Antenna switches for Bluetooth Class1, wireless LAN and PHS Filter switching for mobile communication Features • Low insertion Loss: LOSS = 0.5dB typ. @1.0 GHz •
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TG2216TU
28dBmW
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FET K161
Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or
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3SK114
3SK126
S1255
2SC2644
S-AV24
3SK115
3SK291
S1256
S-AV26H
FET K161
S-AV24
k192a
Transistor C1923
C1923 transistor
k161 jfet
fet k241
k161 mosfet
C1923 transistor base
c2498 TRANSISTOR
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s-av34
Abstract: No abstract text available
Text: S-AV34 TOSHIBA RF POWER AMPLIFIER MODULE S-AV34 ○RF POWER AMPLIFIER MODULE for VHF BAND •for digital use MAXIMUM RATINGS Tc = 25℃, ZG = ZL = 50Ω CHARACTERISTIC SYMBOL TEST CONDITION RATING UNIT DC Supply Voltage VDD VGG =0V, Pi =0mW 20 V DC Supply Voltage
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S-AV34
s-av34
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