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    13001E

    Abstract: 28L3600 ABB 5STP 12
    Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 3170 A 4980 A 52000 A 0.97 V 0.158 mΩ Ω Phase Control Thyristor 5STP 28L4200 Doc. No. 5SYA1009-03 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original
    28L4200 5SYA1009-03 28L4000 28L3600 CH-5600 13001E 28L3600 ABB 5STP 12 PDF

    5STP28L4200

    Abstract: 28L3600 28L42
    Text: VDSM = 4200 V ITAVM = 3170 A ITRMS = 4980 A ITSM = 52000 A VT0 = 0.97 V rT = 0.158 mΩ Phase Control Thyristor 5STP 28L4200 Doc. No. 5SYA1009-03 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original
    5SYA1009-03 28L4200 28L4200 28L4000 28L3600 67xVDRM CH-5600 5STP28L4200 28L42 PDF

    130009

    Abstract: 28L42 ABB thyristor 5 5SYA1009-03 28L3600 3170A
    Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 3170 A 4980 A 52000 A 0.97 V 0.158 mΩ Ω Phase Control Thyristor 5STP 28L4200 Doc. No. 5SYA1009-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications


    Original
    28L4200 5SYA1009-03 28L4200 28L4000 28L3600 CH-5600 130009 28L42 ABB thyristor 5 3170A PDF

    5stp 28l4200

    Abstract: 28L42
    Text: Key Parameters VDSM = 4200 ITAVM = 2800 ITRMS = 4390 ITSM = 52000 VT0 = 0.97 rT = 0.158 V A A A V mΩ Phase Control Thyristor 5STP 28L4200 Doc. No. 5SYA 1009-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original
    28L4200 28L4200 28L4000 28L3600 67xVDRM CH-5600 5stp 28l4200 28L42 PDF