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    29F FLASH Search Results

    29F FLASH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    MD28F020-90 Rochester Electronics LLC Flash, 256KX8, 90ns, CDIP32, CERDIP-32 Visit Rochester Electronics LLC Buy
    AM188EM-25KC\\W Rochester Electronics AM188EM - Microcontroller, 16-Bit, FLASH Visit Rochester Electronics Buy
    AM188EM-40KC\\W Rochester Electronics AM188EM - Microcontroller, 16-Bit, FLASH Visit Rochester Electronics Buy
    AM188EM-33KC\\W Rochester Electronics AM188EM - Microcontroller, 16-Bit, FLASH Visit Rochester Electronics Buy

    29F FLASH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VLGA 64GB

    Abstract: 29f2g08 32G nand flash nand flash 128g MICRON 1.8V 2GB NAND 128GB Nand flash Micron MLC temperature micron 1G SPI NAND flash Micron NAND Flash MLC Die 100Ball
    Text: Next-Generation NAND Flash Part Numbering System Micron's part numbering system is available at www.micron.com/numbering Next-Generation NAND Flash* MT 29F 2G 08 A A A A A WP - xx xx x ES : A Micron Technology Design Revision shrink Single-Supply Flash 29F = NAND Flash


    Original     		PDF 128Gb 256Gb 48-pad 52-pad 100-ball 63-ball VLGA 64GB 29f2g08 32G nand flash nand flash 128g MICRON 1.8V 2GB NAND 128GB Nand flash Micron MLC temperature micron 1G SPI NAND flash Micron NAND Flash MLC Die 100Ball

    29F400BT

    Abstract: FT29F400BT-70TA-S FT29F400BB
    Text: FT29F400BT-70TA-S FT29F400BB-70SA-S 4 Mbit 512KX8 or 2456KX16,Boot Block Single Supply Flash Memory ! SINGLE 5V+/-10% SUPPLY VOLTAGE for PROGRAM, ERASE & READ OPERATIONS ACCESS TIME 70ns ! PROGRAMMING TIME-8uS/Byte/Word Typ. ! ! -S ! TA ! -70 BT 400 29F FT


    Original     		PDF FT29F400BT-70TA-S FT29F400BB-70SA-S 512KX8 2456KX16 A0-A17 DQ0-DQ14 29F400BT FT29F400BB

    MT 29F 64G

    Abstract: 48-pin TSOP I Micron MLC temperature MICRON NAND sLC MT 29F 2G 08 A B A E A WP xx xx x ES E Micron NAND Flash MLC Micron 1GB NAND FLASH MICRON NAND MLC 256gb nand flash MT29H
    Text: Standard NAND Flash Part Numbering System Micron's part numbering system is available at Standard NAND Flash* MT 29F 2G 08 A A A Micron Technology WP - xx xx xx xx ES : A Design Revision shrink A = 1st design revision


    Original     		PDF 128Gb 256Gb 100-ball 63-ball 52-pad MT 29F 64G 48-pin TSOP I Micron MLC temperature MICRON NAND sLC MT 29F 2G 08 A B A E A WP xx xx x ES E Micron NAND Flash MLC Micron 1GB NAND FLASH MICRON NAND MLC 256gb nand flash MT29H

    Micron NAND Flash MLC Die

    Abstract: MT 29F 64G MICRON 1.8V 2GB NAND MT 29F 2G 08 A B A E A WP xx xx x ES E TSOP 48 stacked die package 32G nand flash 1Gb SLC 48-pin TSOP I uLGA 16gb
    Text: Standard NAND Flash Part Numbering System Micron's part numbering system is available at www.micron.com/numbering Standard NAND Flash* MT 29F 2G 08 A A A Micron Technology WP - xx xx xx xx ES : A Design Revision shrink A = 1st design revision Single-Supply Flash


    Original     		PDF 128Gb 256Gb 100-ball 63-ball 52-pad Micron NAND Flash MLC Die MT 29F 64G MICRON 1.8V 2GB NAND MT 29F 2G 08 A B A E A WP xx xx x ES E TSOP 48 stacked die package 32G nand flash 1Gb SLC 48-pin TSOP I uLGA 16gb

    27SF256

    Abstract: 29f100 27SF 29LV 28SF
    Text: PROFESSIONAL PROGRAMMER SERIES The new Batronix Professional Programmer Series offers an exceptionally flexible, simple to use and extremely fast set of programming devices that support a broad range of chips including Eproms, EEproms, Flash, serial EEproms and other storage chips.


    Original     		PDF AM29F040 BX32P 27SF256 29f100 27SF 29LV 28SF

    am29f016b-75

    Abstract: 29f016b
    Text: AM D 3 A m 29F 016B 16 Megabit 2 M x 8-Btt CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology


    OCR Scan     		PDF Am29F016 CS39S 20-year Am29F016B am29f016b-75 29f016b

    Am29F010 Rev. A

    Abstract: No abstract text available
    Text: AMDZ1 A m 29F 010A 1 Megabit 128 K x 8-blt CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ Embedded Algorithms — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements


    OCR Scan     		PDF 20-year 32-pin Am29F010A Am29F010 Rev. A

    Untitled

    Abstract: No abstract text available
    Text: Advance Information C A T 29F 150 1.5 Megabit CMOS 5V Only Sector Flash Memory FEATURES 100,000 Program/Erase Cycles and 10 Year Data Retention • Fast Read Access Time: 90/120/150 ns ■ Sectored Architecture: End of Write Detection — One 16-KB Boot Sector


    OCR Scan     		PDF 16-KB 32-KB 64-KB 32-pin

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY- a Advanced Micro Devices A m 29F 016 16-Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ Embedded Program A lgorithm s — Automatically programs and verifies data at


    OCR Scan     		PDF 16-Megabit 48-pin Am29F016 G25752A 0033DSb TSR048 16-038-TS48 DA104

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY CMOS 8 M 1 M x 8 /512 K x 16 BIT M B M 29 F8OOT-90-12/M B M 29F 800B-90-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs


    OCR Scan     		PDF F8OOT-90-12/M 800B-90-12 48-pin 44-pin F48030S-2C-2 MBM29 F800T-90/-12/M F800B-90/-12 FPT-44P-M16)

    Untitled

    Abstract: No abstract text available
    Text: H igh p erfo rm an ce 512Kx8/256Kxl6 5V CMOS Flash EEPROM U A S 29F 400 A 512Kx8/256Kx 16 CMOS Flash EEPROM Preliminary information Features • O r g a n iz a tio n : 5 1 2 K X 8 o r 2 5 6 K X 1 6 • L o w p o w e r c o n s u m p t io n • S e c to r a r c h it e c tu r e


    OCR Scan     		PDF 512Kx8/256Kxl6 512Kx8/256Kx

    29F200AB

    Abstract: 29f200at 29F200A da1048 29F200
    Text: PRELIMINARY AMDB Am 29 F 200 AT/Am 29F 200 AB 2 M e g a b i t 2 6 2, 14 4 x 8 - B i t /1 3 1 ,0 7 2 x 16-Bit C M O S 5.0 Volt-only, S e c t o r E r a s e Flash M e m o r y DISTINCTIVE C HA R A C TER ISTIC S • 5.0 V ± 1 0 % for read and wri te o p e r a t i o n s


    OCR Scan     		PDF 16-Bit) inadvertenF200AT/Am 29F200AB 44-Pi 16-038-S044-2 29F200AT/Am 29F200AB 29f200at 29F200A da1048 29F200

    29F080

    Abstract: No abstract text available
    Text: High p erform an ce lM x 8 5V CMOS Flash EEPROM •■ II II A S 29F080 I \ f c j j a h i i x 8 CMOS Flash E P R O M Preliminary information Features • Organization: 1MX8 • Sector architecture • Low power consumption - 3 0 mA m axim um read current - SO mA m axim um program current


    OCR Scan     		PDF 29F080 S29F080-55TC AS29F080-70TC S29F080-70TI AS29F080-90TC S29F080-90TI 29F080-120T S29F080-120T S29F080-150T 29F080-150T 29F080

    FLASH MEMORY 29F

    Abstract: 29f200ta 200ta FLASH 29F 29f200ba MBM29F200BA
    Text: M B M29F200TA-90-X-1 2-x/M B M29 F200BA -90 X/' 12-X FEATURES • Single 5.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts


    OCR Scan     		PDF M29F200TA-90-X-1 F200BA 44-pin 48-pin FLASH MEMORY 29F 29f200ta 200ta FLASH 29F 29f200ba MBM29F200BA

    A1317

    Abstract: AS29 120PI
    Text: Preliminary information •■ AS29F002 1 5V 256KX8 CMOS Flash EE PROM Features • O rg a n iz a tio n : 2 5 6 K x 8 • S e c to r a rc h ite c tu re - O n e 16K; tw o 8 K; o n e 32K ; a n d th r e e 6 4K b y te se c to rs - B o o t c o d e s e c to r a r c h ite c tu re — T to p o r B (b o tto m )


    OCR Scan     		PDF AS29F002 256KX8 256Kx8 mo2B-120T1C AS29F002B-120T1I AS29F002T1-120T1C AS29F002T1-120T1I 32-pin AS29F002B-55PC AS29F002B-70PC A1317 AS29 120PI

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ AS29F080 II 5V 1Mx 8 CMOS Flash EEPROM Features • O rganization: 1M x 8 • Sector architecture - Sixteen 64K byte sectors - Equal sector architecture - Erase any com bination o f sectors or full chip • Single 5.0± 0.5V po w er supply for re a d /w rite operations


    OCR Scan     		PDF AS29F080 80-90T 080-120T 080-150T 080-55S AS29F 080-70S

    Untitled

    Abstract: No abstract text available
    Text: High Performance 512KX8 / 2 5 6 KX16 5V CMOS Flash EEPROM •■ | | AS29F400 II 5 Ï2 K X 8 /2 5 6 K X 1 6 CMOS Flash EEPROM Preliminary information Features • O rg a n iza tio n : 5 1 2 K X 8 o r 2 5 6 K x l 6 • L o w p o w e r c o n s u m p tio n


    OCR Scan     		PDF 512KX8 AS29F400 -90SI -120SI S29F400B -150SC 29F400B -150SI 29F400T-70SC S29F400T

    intel 29F

    Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
    Text: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256


    OCR Scan     		PDF 628127H T7164 712S6 DT71Q08 1S61C64AH LS61C2S6AH IS61LV3216 S61C512 IS61C64 S61LV256 intel 29F T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568

    Untitled

    Abstract: No abstract text available
    Text: Hi'^li P i'rfo rm a iK c •■ A S 2 lM;0 2 A 2S6K X 8 SV ( ’MC)S l lasli lil F R O M 2 S6 K x 8 C M O S llii.sli HI.PROM Preliminary information Features • Organization: 2S6Kx8 • Sector architecture • L o w p o w e r c o n s u m p tio n - 4 0 m A m a x im u m re a d c u rre n t


    OCR Scan     		PDF 29F002T -90SI -I20S S29F002T -120SI 000011b

    Untitled

    Abstract: No abstract text available
    Text: H igh perform an ce 512K X 8 5 V CMOS Flash EEPROM n A S29F040 II. II W llh . 5 1 2 K x 8 CM O S Flash EEPROM Preliminary information Features • Low pow er consum ption • Organization: 512K X 8 • Sector architecture • • • • - 3 0 m A m ax im u m read current


    OCR Scan     		PDF S29F040 040-90T -120TC -150TC 040-55L 040-70L 040-90L 040-150L

    programmer for 29F010

    Abstract: 29F010 29F010-12 29F010-15 29F010-10 TMS29F010 29F010-120 TMS29F010JL4 VEFH 29F010_120
    Text: TMS29F010 1 048 576-BIT FLASH/BLOCK ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SM JS010A — A U G U S T 1990 — REVISED DECEM BER 1990 • Organization 128K 32K x 8 Each x 8 or 4 Blocks of N and J Packages Top View NC • Single 5-V Power Supply


    OCR Scan     		PDF TMS29F010 576-BIT SMJS010A 29F010-100 29F010-120 29F010-150 29F010-200 29F010-12 29F010-15 29F010-20 programmer for 29F010 29F010 29F010-12 29F010-10 29F010-120 TMS29F010JL4 VEFH 29F010_120

    Am29f

    Abstract: No abstract text available
    Text: I/VHITE /M IC R O E L E C T R O N IC S m 512Kx32 5V FLASH S IM M WPF512K32-90PSC5 P R E L IM IN A R Y * FEATURES • A ccess Tim e o f 90ns ■ Organized as 5 1 2Kx32 ■ Packaging: ■ C om m e rcial T e m p era ture Range • 8 0-pin S IM M ■ 5 V o lt Program m ing. 5V ± 10% Supply.


    OCR Scan     		PDF WPF512K32-90PSC5 512Kx32 2Kx32 512K32 Am29f

    29F200

    Abstract: HY29F200T
    Text: mV *• Y II M n A I ■ l i ■■ ■■ » 1 ■ HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEYFEATURES • 5.0 V 1 10% Read, Program, and Erase • - Minimizes system-level power requirements • - RY//BY output pin for detection of


    OCR Scan     		PDF HY29F200T/B HY29F200 16-Bit) G-70I T-70I R-70I G-70E, T-70E, R-70E G-90I 29F200 HY29F200T

    ym 238

    Abstract: hy 214 29F002
    Text: H ig h P e rfo rm a n ce « 256K X 8 AS29F002 II 5V CMOS Flash EEPROM 2 M egabit 5V CMOS Flash FEPROM Preliminary information Features • O r g a n iz a tio n : 2 5 6 K x 8 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 35 m A m a x im u m read current


    OCR Scan     		PDF AS29F002 256KX8 256Kx8 ym 238 hy 214 29F002