511ML
Abstract: 243L3 tsop 338 IR
Text: FLASH M EM ORY KM 29V32000TS/RS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 4 M +128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase - Page Program : (512 + 1S)Byte
|
OCR Scan
|
KM29V32000TS/RS
250us
0D243A2
511ML
243L3
tsop 338 IR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 29V32000TS FLASH MEMORY Document Tills 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.
|
OCR Scan
|
KM29V32000TS
29V32000
KM29N32000
KM29W32000
|
PDF
|
KM29V32000TS
Abstract: No abstract text available
Text: 29V32000TS ELECTRONICS Fl as h 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization The 29V32000TS/RS is a 4M 4,194,304 x8 bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for the mass
|
OCR Scan
|
KM29V32000TS
250us
KM29V32000TS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 29V32000T, 29V32000IT FLASH MEMORY Document Title 4M X 8 bit NAND Flash Memory Revision Historv Revision No. Historv Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.
|
OCR Scan
|
KM29V32000T,
KM29V32000IT
29V32000
KM29N32000
KM29W32000
|
PDF
|
b8331
Abstract: No abstract text available
Text: 29V32000TS/RS FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - vo lt Supply The K M 29V 32000T S /R S is a 4 M 4,19 4 ,3 0 4 x8 bit N AND • Organization Flash m em ory w ith a spare 128K (131,072)x8 bit. Its NAND
|
OCR Scan
|
KM29V32000TS/RS
250us
32000T
b8331
|
PDF
|
EM 319
Abstract: em319 GD5434
Text: 29V32000T/R FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply T he KM 29V 32000T /R is a 4 M 4 ,19 4 ,3 0 4 x8 b it N AND • O rganization Flash m e m ory w ith a sp are 1 2 8 K (1 3 1,0 72 )x8 bit. - M em ory Cell Array
|
OCR Scan
|
KM29V32000T/R
250us
\256Byte\
bH14H
EM 319
em319
GD5434
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KM29N32000T, KM29N32000IT FLASH MEMORY Document Title 4M X 8 bit NAND Flash Memory Revision History Revision No. History Draft Date o.o Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.
|
OCR Scan
|
KM29N32000T,
KM29N32000IT
29V32000
KM29N32000
KM29W32000
|
PDF
|
KM29N32000
Abstract: KM29V32000IT KM29V32000T scheme electronics
Text: 29V32000T, 29V32000IT FLASH MEMORY Document Title 4M X 8 bit NAND Flash Memory Revision History Revision No. H istory Draft Date o.o Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.
|
OCR Scan
|
KM29V32000T,
KM29V32000IT
KM29V32000
KM29N32000
KM29W32000
KM29N32000
KM29V32000IT
KM29V32000T
scheme electronics
|
PDF
|
29N32
Abstract: No abstract text available
Text: FLASH MEMORY KM29N32000T, KM29N32000IT Document Title 4M x 8 bit NAND Flash Memory Revision Historv Revision No. Historv Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.
|
OCR Scan
|
KM29N32000T,
KM29N32000IT
29V32000
KM29N32000
KM29W32000
29N32
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29W32000TS Document Title 4M x 8 Bit NAND Flash Memory Revision Historv Revision No. Historv Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th Final 1998 The attached datasheets are prepared and approved by SAMSUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right
|
OCR Scan
|
KM29W32000TS
29V32000
KM29N32000
KM29W32000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KM29W32000TS 4M X FLASH MEMORY 8 Bit NAND Flash Mem ory Revision No. H istory Draft Date Rem ark 0 .0 Initial issue. April 10th 1998 P relim in a ry 1.0 D a ta s h e e t, 1998 J u ly 14th 1998 Final T h e a tta c h e d d a ta s h e e ts a re p re p a re d an d a p p ro v e d by S A M S U N G E lectronics. S A M S U N G E lectronics C O ., L T D . re s e rv e th e right
|
OCR Scan
|
KM29W32000TS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KM29 V32000T Flash ELECTRONICS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x 8bit - Data Register : (512 + 16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte
|
OCR Scan
|
V32000T
250us
KM29V32000T)
003iA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FLASH MEMORY KM29N32000TS Document Title 4M x 8 Bit NAND Flash Memory Revision Historv Revision No. Historv Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.
|
OCR Scan
|
KM29N32000TS
29V32000
KM29N32000
KM29W32000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KM29W32000T, KM29W32000IT FLASH MEMORY Document Title 4M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right
|
OCR Scan
|
KM29W32000T,
KM29W32000IT
29V32000
KM29N32000
KM29W32000
|
PDF
|
|
|