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    2N241 Search Results

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    2N241 Price and Stock

    Susumu Co Ltd RG2012N-241-W-T1

    RES SMD 240 OHM 0.05% 1/8W 0805
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    DigiKey RG2012N-241-W-T1 Digi-Reel 1,890 1
    • 1 $0.92
    • 10 $0.651
    • 100 $0.4437
    • 1000 $0.32942
    • 10000 $0.32942
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    RG2012N-241-W-T1 Cut Tape 1,890 1
    • 1 $0.92
    • 10 $0.651
    • 100 $0.4437
    • 1000 $0.32942
    • 10000 $0.32942
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    RG2012N-241-W-T1 Reel 1,000
    • 1 -
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    • 100 -
    • 1000 $0.28875
    • 10000 $0.28875
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    Mouser Electronics RG2012N-241-W-T1 2,300
    • 1 $0.92
    • 10 $0.651
    • 100 $0.444
    • 1000 $0.288
    • 10000 $0.288
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    Newark RG2012N-241-W-T1 Reel 1,000
    • 1 $0.423
    • 10 $0.423
    • 100 $0.423
    • 1000 $0.423
    • 10000 $0.382
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    Traco Power TES-2N-2411

    DC DC CONVERTER 5V 2W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TES-2N-2411 Tube 179 1
    • 1 $28.11
    • 10 $25.826
    • 100 $23.73
    • 1000 $17.025
    • 10000 $17.025
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    Traco Power TES-2N-2410

    DC DC CONVERTER 3.3V 1.7W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TES-2N-2410 Tube 112 1
    • 1 $25.2
    • 10 $21.817
    • 100 $20.0519
    • 1000 $18.90348
    • 10000 $18.90348
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    Traco Power TES-2N-2413

    DC DC CONVERTER 15V 2W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TES-2N-2413 Tube 110 1
    • 1 $25.2
    • 10 $21.817
    • 100 $20.0519
    • 1000 $18.90348
    • 10000 $18.90348
    Buy Now

    Traco Power TES-2N-2412

    DC DC CONVERTER 12V 2W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TES-2N-2412 Tube 11 1
    • 1 $28.11
    • 10 $25.826
    • 100 $23.73
    • 1000 $17.025
    • 10000 $17.025
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    2N241 Datasheets (212)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N241 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N241 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N241 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N241 Unknown GE Transistor Specifications Scan PDF
    2N241 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N241 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N241 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N241 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N241 Unknown Vintage Transistor Datasheets Scan PDF
    2N2410 Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF
    2N2410 Central Semiconductor NPN METAL-CAN SATURATED SWITCH / LOW NOISE LEVEL AMPLIFIER Scan PDF
    2N2410 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2410 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2410 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N2410 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2410 Unknown GE Transistor Specifications Scan PDF
    2N2410 Unknown Transistor Replacements Scan PDF
    2N2410 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2410 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N2410 Unknown Transistor Replacements Scan PDF
    ...

    2N241 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 2N2417 - 2N2422, A, B SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation 1 RMS emitter current Peak pulse emitter current Symbol Value Unit PD 350 mW IE 70 mA ie 2 Amps Emitter reverse voltage VB2E 60 Volts Interbase voltage


    Original
    2N2417 2N2422, 33mW/Â 2N2646, 2N2647 MIL-PRF-19500, PDF

    2SC1766C

    Abstract: BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 ~~g~~! ~olid§tlnc ~g ~gg~ ~g ~gg~ 25 25 25 30 30 30 35 35 100m 100m 100m 100m 600m 1.0 400m 400m 2SC394 2SC394 2SC394 PET8005 2N2410 BSS41 2N3973 2N3975 BC125B BC387 BFW32 HSE133


    Original
    2SC1766A 2SC1766B 2SC1766C 2SC1766D MM1941 MPS6512 MPS6513 TP5377 TP5376 HSE144 BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab PDF

    140M

    Abstract: 2N2412BX
    Text: 2N2412BX Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 20V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products


    Original
    2N2412BX O206AA) 5/50u 2-Aug-02 140M 2N2412BX PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2412BX Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 20V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products


    Original
    2N2412BX O206AA) 5/50u 16-Jul-02 PDF

    140M

    Abstract: 2N2411X
    Text: 2N2411X Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 20V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products


    Original
    2N2411X O206AA) 5/50u 2-Aug-02 140M 2N2411X PDF

    BC125

    Abstract: 2N907 G700M BC232B 2N1410 kt384a LOW-POWER SILICON NPN 2N474 BFY33 3N35
    Text: LOW-POWER SILICON NPN Item Number Part Number 2SC3246K 2SD1627 2SC3053 BFY72 2N2414 2N4968 V BR CEO 10 15 TP5451 40080 MPS3566 MPS3566 2S741 2S741 2S741A PET3704 PET3705 2N471 ~~1~~~ 20 25 - 30 35 D4C28 4C28 2N546 2N1252A 2N1252A 2N907 2N761 BC120 ~g~~g SE8oo1


    Original
    2SC3246K 2SD1627 2SC3053 BFY72 2N2414 2N4968 TP5451 MPS3566 2S741 BC125 2N907 G700M BC232B 2N1410 kt384a LOW-POWER SILICON NPN 2N474 BFY33 3N35 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2412X Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 20V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products


    Original
    2N2412X O206AA) 5/50u 16-Jul-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2411X Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 20V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products


    Original
    2N2411X O206AA) 5/50u 19-Jun-02 PDF

    transistor 2N4891

    Abstract: 45W UHF 2N4891 2N4947 transistor 2n4852 2SH21 Lv42 2n6120 91kohm 2N494
    Text: ADDITIONAL TRANSISTORS Item Number Part Number Polarity Manufacturer Package Style Description Mati. Unijunction Transistors, Cont'd 2N1671A 2N1671B 2N1671C 2N2160 2N2213 2N2213 2N2417 2N2417A 2N2417B 2N2418 2N2418A 2N2418B 2N2419 2N2419A 2N2419B 2N2420


    Original
    2N1671A 2N1671B 2N1671C 2N2160 2N2213 2N2417 2N2417A 2N2417B 2N2418 transistor 2N4891 45W UHF 2N4891 2N4947 transistor 2n4852 2SH21 Lv42 2n6120 91kohm 2N494 PDF

    2N2411

    Abstract: 2N2412 2N2* Central
    Text: DATA SHEET 2N2411 2N2412 PNP SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2411, 2N2412 types are PNP Saturated Switching Transistors designed for high speed switching applications. MAXIMUM RATINGS: SYMBOL Collector-Base Voltage


    Original
    2N2411 2N2412 2N2411, 2N2412 2N2411 2N2* Central PDF

    2N241

    Abstract: No abstract text available
    Text: 2N2412X Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 20V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products


    Original
    2N2412X O206AA) 5/50u 19-Jun-02 2N241 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2412BX Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 20V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products


    Original
    2N2412BX O206AA) 5/50u 19-Jun-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2411X Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 20V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products


    Original
    2N2411X O206AA) 5/50u 16-Jul-02 PDF

    140M

    Abstract: 2N2412X
    Text: 2N2412X Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 20V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products


    Original
    2N2412X O206AA) 5/50u 2-Aug-02 140M 2N2412X PDF

    Untitled

    Abstract: No abstract text available
    Text: DC/DC Converters TES 2N Series, 2 Watt RoHS compliant Features ◆ Low Profile SMD-Package ◆ Wide 2:1 Input Voltage Range ◆ I/O-Isolation 1500 VDC ◆ Input Filter meets EN55022, Class A ◆ Operating Temperature Range pending -40°C to +71°C ◆ Short-Circuit Protection


    Original
    EN55022, CH-8002 PDF

    2N3051

    Abstract: 2N3050 2N2412 2n3049
    Text: TYPES 2N3049, 2N3050, 2N3051 DUAL P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 7 4 2 3 0 , A U G U S T 1 9 6 3 - R E V I S E D A P H IL 1 96 7 DESIGNED FOR DIFFERENTIAL AMPLIFIERS, LOW-NOISE AMPLIFIERS, AND LOW-LEVEL SWITCHING • Each Triode Electrically Similar to 2N2411 and 2N2412 Transistors


    OCR Scan
    2N3049, 2N3050, 2N3051 2N2411 2N2412 2N3050 2n3049 PDF

    2N4947

    Abstract: MU4891 transistors TO-92 case 2N2646 TO-92 2n4948 2n4949 2N241A 2N4871 MU2646 2N264
    Text: IN T R IN S IC S T A N D O F F R A T IO n M IN. r I 2N2417 TYPE 2N 2417A 2N 2417B 2N 2418 2N 2418A 2N 2418B 2N2419 2N241ÔB 2 N2420 2 N2420A 2N 2420B 2N2421 2N 2421A 2N 2421B ! 2N 242 2’ ’ j 2N 2422A • 2N 2422B 2N2646 2N2647 c M A X. 0.51 0.61 0.61 0.51


    OCR Scan
    IEB20Â 2N2417 2N2417A 2N24178 2N2418 2N2418A 2N2418B 2N241Ã 0U0110A 2N2419B 2N4947 MU4891 transistors TO-92 case 2N2646 TO-92 2n4948 2n4949 2N241A 2N4871 MU2646 2N264 PDF

    UJT 2N2646

    Abstract: 2n2646 ujt UJT 2N4871 UJT 2N2646 ratings 2N2646 UJT 2N4870 2N2646 TO-92 2N4947 ujt 2N6027 PUT 2N2646
    Text: TARI E R UNIJUNCTION CENTRAL TYPE ; ' ! < i jj I ' í; •f : : ! •] :j ; ij ;j I SEMICONDUCTOR INTRINSIC STANDOFF RATIO r 2N2417 2N2417A 2N2417B 2N2418 2N2418A 2N2418B 2N2419 2N2419A 2N2419B 2N2420 2N2420A 2N2420B 2N2421 2N2421A 2N2421B 2N2422 2N2422A


    OCR Scan
    0D00S37 IEB20 2N2417 2N2417A 2N2417B 2N2418 2N2418A 2N2418B 2N2419 2N2419A UJT 2N2646 2n2646 ujt UJT 2N4871 UJT 2N2646 ratings 2N2646 UJT 2N4870 2N2646 TO-92 2N4947 ujt 2N6027 PUT 2N2646 PDF

    2n491a

    Abstract: Helipot 2N469A 2N489A 2N490A MXL-STD-750 2N2417A 2N2418A 2N2422A 2N494A
    Text: MUrS~19500/75B 18 October 1986 SUPERSEDING n / rrra _ t a r nnM * w w w \ j f ««#4 25 October 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTORS, PN, SILICON UNIJUNCTION TYPES 2N489A THROUGH 2N494A. TX2N489A THROUGH TX2N404A. 2N2417A THROUGH 2N2422A, AND 2N2417A THROUGH TX2N2422A


    OCR Scan
    MH/-S-19500/75B 2N489A 2N494A. TX2N489A TX2N494A. 2N2417A 2N2422A, TX2N2417A TX2N2422A 2n491a Helipot 2N469A 2N490A MXL-STD-750 2N2418A 2N2422A 2N494A PDF

    2n2646

    Abstract: 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2840 2n4870 mu4891 *n2418
    Text: TARI E R UNIJUNCTION CENTRAL TYPE ; ' ! < i jj I ' í; •f : : ! •] :j ; ij ;j I INTRINSIC STANDOFF RATIO r 2N2417 2N2417A 2N2417B 2N2418 2N2418A 2N2418B 2N2419 2N2419A 2N2419B 2N2420 2N2420A 2N2420B 2N2421 2N2421A 2N2421B 2N2422 2N2422A 2N2422B 2N2646


    OCR Scan
    0D00E37 0000SE3 O-105 O-106 2n2646 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2840 2n4870 mu4891 *n2418 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan
    PDF

    UM9C

    Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
    Text: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma


    OCR Scan
    DDDQS16 2N2242 2N2368 2N2369 2N2369A 2N2410 N2475 2N2481 2N2501 2N2651 UM9C J 2N930 2N2651 PDF

    2N4260

    Abstract: 2N3829 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50
    Text: s[^pT e x a s Discrete Semiconductors In s tru m e n ts Polarity High Current NPN Amplifiers Device Type Case Maximum ratings BV BV BV CBO CEO EBO ICM mA V V V hFE1 hFE2 1C fT 1C mA min. min. max. MHz max. mA 250 250 300 1000 1000 1000 20 25 25 — 1000 1000


    OCR Scan
    BFT39 BFT29 BFT40 BFT30 BFT41 BFT31 BFY50 BFT53 BFY51 BFT54 2N4260 2N3829 PDF

    2N19A

    Abstract: 2N1310 2n1408 2N1305 2N1100 2N404 transistor 2N1008 npn germanium 2N1378 2N1924
    Text: T - Z 7 - O I discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ' T t i n t h i a i : Polarity v 2843A Maximum Power <W Maximum V) VCB VCE Typical G lin HFE Frequency Reip. (MHz) Gau P o h iity Î v t V f * 5" ^


    OCR Scan
    2K43A 2N44A 2Nto37 2N18M 2N109? 2N169 2N3427 2N662 2N1008 2N1008B 2N19A 2N1310 2n1408 2N1305 2N1100 2N404 transistor npn germanium 2N1378 2N1924 PDF