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    2N297 Price and Stock

    Microchip Technology Inc 2N2973

    PNP TRANSISTOR
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    Microchip Technology Inc 2N2978

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    Microchip Technology Inc 2N2976

    DUAL SMALL-SIGNAL BJT
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    Microchip Technology Inc 2N2974

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    Microchip Technology Inc 2N2979

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    2N297 Datasheets (169)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N297 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N297 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N297 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N297 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N297 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N297 Unknown Vintage Transistor Datasheets Scan PDF
    2N297 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N297 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N297 Unknown GE Transistor Specifications Scan PDF
    2N297 Semitron Germanium Power Transistors Scan PDF
    2N2970 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2970 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2970 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2970 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N2970 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N2970 Unknown Vintage Transistor Datasheets Scan PDF
    2N2970 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2970 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N2970 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2970 Unknown GE Transistor Specifications Scan PDF
    ...

    2N297 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N2979DCSM

    Abstract: No abstract text available
    Text: 2N2979DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15


    Original     		2N2979DCSM MO-041BB) 2-Aug-02 2N2979DCSM PDF

    ASZ1017

    Abstract: PTC155 MP1540 2N1532 2n2211 2N242 MP1542 MP280 germanium
    Text: POWER GERMANIUM PNP Item Number Part Number I C 5 - 10 20 25 30 MP1540 2N1540 MP1532 CDT1320 MP1537 2N297 2N297A CDT1311 ~~~~~~ COT1111A 40051 40421 40421 40421 MP1547 2N1547 2N1547A ~~~~r 35 40 MP1533 2N1531 2N463 2N1531A 2Nl182 2Nl159 2N3213 MP1538 ~~~~3~A


    Original     		2N1546A PTC155 SK3123 MP280 2Nl138 2N3316 2N456 2N1530 2N1530A 2N1535 ASZ1017 MP1540 2N1532 2n2211 2N242 MP1542 germanium PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2975 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)30m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N2975 Freq60M PDF

    1735

    Abstract: No abstract text available
    Text: 2N2972 Si NPN Lo-Pwr BJT 17.35 Transistors Transistors Bipolar Si N. 1 of 1 Home Part Number: 2N2972 Online Store 2N2972 Diodes Si NPN Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		2N2972 com/2n2972 2N2972 1735 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2976 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)30m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N2976 Freq60M PDF

    2N297A

    Abstract: GERMANIUM PNP LOW POWER TRANSISTORS
    Text: 2N297A Ge PNP Power BJT 10.00 Transistors Bipolar Germanium PNP. 1 of 2 Home Part Number: 2N297A Online Store 2N297A Diodes G e PNP Po w er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		2N297A com/2n297a 2N297A GERMANIUM PNP LOW POWER TRANSISTORS PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2974 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)30m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N2974 Freq60M PDF

    2n297a

    Abstract: 2n297
    Text: 2N297 A 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 POWER TRANSISTOR GERMANIUM PNP POWER TRANSISTOR 2N297A is a germanium PNP alloy junction power t r a n s i > t o r m e r t i n g m i l i t a r y specification MlL-T-19500 36A


    Original     		2N297 2N297A MlL-T-19500 2X297A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2978 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N2978 Freq60M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2979 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)30m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N2979 Freq60M PDF

    BLH DHF 350

    Abstract: LTC1024 BLH DHF LT1024 74C00 74C00 match BLH load cell LT1012 LT1013 BLH Pressure Transducer specifications
    Text: LT1024 Dual, Matched Picoampere, Microvolt Input, Low Noise Op Amp DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Guaranteed Offset Voltage: 50µV Max Guaranteed Bias Current: 25°C: 120pA Max –55°C to 125°C: 700pA Max Guaranteed Drift: 1.5µV/°C Max


    Original     		LT1024 120pA 700pA 112dB 254mm) LT1884 1024fa BLH DHF 350 LTC1024 BLH DHF LT1024 74C00 74C00 match BLH load cell LT1012 LT1013 BLH Pressure Transducer specifications PDF

    2n261 rca

    Abstract: 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2501199 2501424 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 MPSS545 MPSS545 BCWSSRH BCWS8RG BC817 BC817 BC1S7B 2N472 2N472A 2N2247 2N2247 2N2247 ~~i~~9 25 30 2N2038 2N332A 2N757 2N758 MPSS544 2N475


    Original     		2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545 BC817 2n261 rca 2N301G 2n257 2n185 2n222 motorola diode s2m 2N277 2N244 2N243 2N332A PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 PDF

    Q2T2905

    Abstract: SN3351 3N208 q2t2222 TIS25 2N3808 2N3680 2N3809 2N381 T05 n3806
    Text: Multi Transistors Dual Bipolar M ATCHIN G SELECT!roR HFE 20% HFE VBE VBE 5 mV RATINGS 10% 3 mV U N M ATCH ED 2N2641 2N2644 2N2913 2N2914 2N2223* 2N2640* 2N2643* 2N2917 2N2918 2N2972 2N2973 2N2976 2N2977 2N3349* 2N3352* 2N3806 2N3807 2N4854 2N4855 2N3348*


    OCR Scan     		2N2060t 2N2223* 2N2223At 100/xA 2n2641 2n2640* 2N2639t 2n2644 2n2643* 2N2642I Q2T2905 SN3351 3N208 q2t2222 TIS25 2N3808 2N3680 2N3809 2N381 T05 n3806 PDF

    Untitled

    Abstract: No abstract text available
    Text: Type NPN A m bient PD PNP One Side mW Both Sides mW 2N2974 250 300 2N2975 250 2N2976 V CE Sat @ l c / l B H F E @ lc V CE V olts V EB Volts 45 45 6 300 45 45 250 300 45 2N2977 250 300 2N2978 250 2N2979 V CB Volts T racking Electrical Characteristics @ 25°C (One Side)


    OCR Scan     		2N2974 2N2975 2N2976 2N2977 2N2978 2N29791 T0-71 PDF

    2920A

    Abstract: NS2N A2JA 2N2920A 2N2913 2N2920
    Text: mmm types 2N2813 t h r u 2N29?o mZSMA 2N2972 THRU 2N2979 DUAL N P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 1 1 1 6 5 . M A R C H 1969 A BR O A D F A M IL Y OF D U A L T R A N S IS T O R S R ECO M M EN D ED FO R Differential Amplifiers High-Gain, Low-Noise, Audio Amplifiers


    OCR Scan     		2N2813 2N2972 2N2979 2920A NS2N A2JA 2N2920A 2N2913 2N2920 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2n2407

    Abstract: 2N3907 transistor 2N3907 2N3908 2N4651 INTEX 2N2910 2N3680 2N2453 Programmable unijunction
    Text: IN T E X / SE M IT R Ô N IC S CORP 27E D discrete devices GG002flL> 3 semitron hot line 7^ 7 -• ¿7 37 TOLL FREE NUMBER 800-777-3960 multiple devices dual transistors A Vb e -1— Vb E.2 Breakdown Voltate: (volts) T)fH VcB VCE Veb Min. Max. 2N2060 2N2060A


    OCR Scan     		2N2060 2N2060A 2N20609 2N2223 2H2223A 2N2453 2N24S3A 2N2480 2N24S0A 2N2639 2n2407 2N3907 transistor 2N3907 2N3908 2N4651 INTEX 2N2910 2N3680 Programmable unijunction PDF

    2N3055E specification

    Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package
    Text: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349


    OCR Scan     		ai331 2N2906\ 2N2906A* 2N2907 2N2907A 2N2913y 2N2914\ 2N2915 2N2916 2N2917 2N3055E specification 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package PDF

    2N1203

    Abstract: pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N173 2N511
    Text: m . •■_ Môb^EMb 0000213 7 ^ ;3 3 " ° ¡ H J E iT lltrO n SEMICONDUCTORS SemitronicsCorp. INTEX/ SENITRONICS CORP 27E D germanium transistors cont’d g e rm a n iu m pow er tra n sisto rs T»P» Polarity Power Dissipation


    OCR Scan     		2N155 2N156 2N158 2N158A 2N173 T0-13 2N174 2N176 2N234A 2N1203 pnp germanium to36 2N1545 2N214 2N3312 2N3614 2N1560 2N1552 2N511 PDF

    KE4416

    Abstract: ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375
    Text: DH3467C Quad PNP Core Driver DESCRIPTION CONNECTION DIAGRAM The DH3467C consists of four 2N3467 type PNP transistors mounted in a 14-pin molded dual-in-line package. The device is primarily intended fo r core memory application requiring operating currents


    OCR Scan     		DH3467C 2N3467 14-pin O-106 O-220 KE4416 ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375 PDF

    2n3866s

    Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
    Text: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1


    OCR Scan     		BYV34-300SM BYV34-400ASM BYV34-- 400RSM 400SM BYV34-500ASM BYV34-500RSM BYV34-500SM LM137-SM 2n3866s DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82 PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF