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    nVent Hoffman A42N3009

    Enclosure, Junction Box, Steel, Gray; Enclosure Type:Electrical/Industrial; Enclosure Material:Steel; External Height - Metric:1.07M; External Width - Metric:762Mm; External Depth - Metric:235Mm; Ip Rating:Ip30; Body Color:Gray Rohs Compliant: Yes |Nvent Hoffman A42N3009
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    Newark A42N3009 Bulk 1
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    RS A42N3009 Bulk 1
    • 1 $1348.59
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    Texas Instruments 2N3009

    TRANSISTOR,BJT,NPN,15V V(BR)CEO,200MA I(C),TO-52
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N3009 1
    • 1 $3.6288
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    2N3009 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3009 Central Semiconductor NPN SILICON HIGH SPEED SWITCHING TRANSISTOR Original PDF
    2N3009 Central Semiconductor NPN METAL-CAN SATURATED SWITCH / LOW NOISE LEVEL AMPLIFIER Scan PDF
    2N3009 Central Semiconductor NPN SILICON HIGH SPEED SWITCHING TRANSISTORS Scan PDF
    2N3009 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N3009 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3009 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3009 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3009 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3009 Unknown GE Transistor Specifications Scan PDF
    2N3009 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3009 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3009 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3009 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3009 Unknown Vintage Transistor Datasheets Scan PDF
    2N3009 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2N3009 National Semiconductor NPN Transistors - Saturated Switches Scan PDF
    2N3009 National Semiconductor NPN Transistors Scan PDF
    2N3009 National Semiconductor Pro-Electron Transistor Datasheets Scan PDF
    2N3009 SGS-Ates Shortform Data Book 1977/78 Short Form PDF
    2N3009 SGS-Ates Semiconductor Data Book 1976/77 Scan PDF

    2N3009 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N3009

    Abstract: No abstract text available
    Text: eS&mi-dontLjLctoi ZPioauata., 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N3009 2N3013 2N3014 NPN SILICON HIGH SPEED SWITCHING TRANSISTORS 2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors


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    2N3009 2N3013 2N3014 2N3009, 2N3013, 2N3014 2N3009 PDF

    switch NPN

    Abstract: BSY18 2N2369 2n4390
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


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    2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A switch NPN BSY18 2N2369 2n4390 PDF

    2N3546

    Abstract: 2N3073 2N2896 2N2897 2N2906A 2N2907A 2N2952 2N3009 2N3011 2N3012
    Text: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ µA) (V) (V) (V) (µ MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) MAX MAX MIN NF ton (ns) toff (ns) MAX MAX MAX


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    2N2896 2N2897 2N2906A 2N3546 2N3547 2N3548 2N3549 2N3550 2N3546 2N3073 2N2896 2N2897 2N2907A 2N2952 2N3009 2N3011 2N3012 PDF

    2n5183

    Abstract: BC187 Small Signal Transistors TO-18 Case
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


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    2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A 2n5183 BC187 Small Signal Transistors TO-18 Case PDF

    2n2224

    Abstract: 2N2222B 2N2244 2N4418 2N2374 2SC321H 2N2250 ESM2369 rca 2N2270 2N2245
    Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 -60 65 - 70 EN914 2N708 2N914A 2N914A 2N914A 40219 40219 40221 40221 BSY19 BSY19 BSY19 2N3605A 2N3606A 2S95A 2S95A 2N1708A 2N321 0 BF165 2SC321H 2N2319 2N4264 2N2272


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    EN914 2N708 2N914A BSY19 2N3605A 2N3606A 2n2224 2N2222B 2N2244 2N4418 2N2374 2SC321H 2N2250 ESM2369 rca 2N2270 2N2245 PDF

    2N3009

    Abstract: 2N3013 2N3014 LB-23
    Text: Data Sheet 2N3009 2N3013 2N301A Central Sem iconductor Corp. NPN SILICON HIGH SPEED SWITCHING TRANSISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors JEDEC T0-18 CASE


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    2N3009 2N3013 2N3014 T0-18 2N3009, 2N3013, 2N3014 2N3013 LB-23 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    UM9C

    Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
    Text: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma


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    DDDQS16 2N2242 2N2368 2N2369 2N2369A 2N2410 N2475 2N2481 2N2501 2N2651 UM9C J 2N930 2N2651 PDF

    GT 32 DIAC

    Abstract: TAG 203 350 2n50b tag 627 800 tag thyristoren 2N3936 2N3937 2N1601 tag 6 600 TO-48C
    Text: Thyristoren Silicon Controlled Rectifiers TYP* *8=V .V DRM RRM BRX 44.BRX 49 BRX 50.BRX 56 TAG 50.TAG 57 BR 103 TAG 60P TAG 60A TAG 06-* BR 203 TAG 64F TAG 64A TAG 1-* TAG 2-* BTX 30-* TAG 520-* TAG 521~* TAG 605-* TAG 606-* TAG 106 BRX.61.BRX66 TAG 610-*


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    RD-26 T0-18 502N1848A 2N1849 2NX849A GT 32 DIAC TAG 203 350 2n50b tag 627 800 tag thyristoren 2N3936 2N3937 2N1601 tag 6 600 TO-48C PDF

    2N3633

    Abstract: No abstract text available
    Text: CENTRAL SEMICONDUCTOR PE § QOOOSlfl 5 | NPN METAL CAN - SATURATED SWITCH Cont'd, VCB VCE V ge hFE at •c VCE Vc e (s) a* lc 2 } fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 _ 12 12 12 - 25 15 18 18 55 i V V V min


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    2N2242 2N2368 2N2369 2N2369A 2N2410 2N2475 2N2481 2N2501 2N2651 2N2710 2N3633 PDF

    2N5057

    Abstract: JAN2N706A 2n5456
    Text: TRANSISTORS—SMALL SIGNAL NPN HIGH SPEED SATURATED SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (toff ) ns @ IQ 2N834 M AX mA @ *C MIN - M A X mA TC 25°C MHz pF Ta 25°C mA MIN M AX mW W Package Complement 0.25 @ 10 350 4.0 300 1.0 TO-18 2N2894A


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    2N834 2N709 FT709 2N3010 2N709A 2N2475 2N3647 2N3510 2N3011 2N743 2N5057 JAN2N706A 2n5456 PDF

    2n3547

    Abstract: 2N3549
    Text: Small Signal Transistors TO-18 Case Continued TYPE NO. 2N2896 2N2897 DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V e ic h FE BVCBO BVCEO BVEBO •CBO « VCBO (mA) (V) MIN VCE V C E (S i iT) IC Cob (V) (V) (mA) MAX MAX (pF) MAX n- NF ton


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    2N2896 2N2897 2N2906A 2N2907A 2N2952 2N3009 2N3011 2N3012 2N3013 2N3014 2n3547 2N3549 PDF

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C PDF

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    BF195 equivalent

    Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
    Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products


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    2n3009

    Abstract: No abstract text available
    Text: Small Signal Transistors TO-18 Case Continued T Y P E NO. D E S C R IP T IO N bvc bo b v c eo b v e b o I C B O « m <V) MM IMI (V) mu h PE VCBC « te (m A) (ft* ) M AX 0 VCE (V) VC£(Si T )« « C Cob (V ) (m A) M AX W * . M AX m NF ton toft (MHZ) (< «) (M )


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    2N2896 2N2897 2N2906A 2N2907A 2N2952 2N3009 2N3011 2N3012 2N3013 2N3014 PDF

    2N3800

    Abstract: germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817
    Text: DATA BDI S U P P L E M E NT This is the second supplement to the 2nd Edition of the Semiconductor Data Book originally published in August 1966. It is produced to keep an up-to-date listing of the most advanced semiconductor products. D evices characterized in this supplement include only the type numbers in tro­


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    29B52595F13 52595F09 2N3800 germanium diode germanium tu 38 e 2n4051 motorola 2N4280 2N3980 1N3492 MC710F 2N4276 2n3817 PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF

    1.0 k mef 250

    Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
    Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a


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    semi-820 BYX22-400 BYX22-600 BYX22-800 BYX26-60 YX26-150 BYX36-1 BYX36-300 1.0 k mef 250 ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072 PDF

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 PDF

    2n744

    Abstract: LM3661TL-1.40
    Text: Small signal Transistors TO-18 Case T Y P E NO. DESC RIPTIO N 00 V (V) (HA) MIN MIN MIN MAX *IC ES " IC E V @ 1C @ V C E V C E(SAT ) @ «C Cob hFE B V C B O B V C EO B V e b O C B O * V C B O <raA) (V) MIN M AX (V) (V) (mA) (PF) M AX M AX ton toff (ns) IT


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    2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A 2n744 LM3661TL-1.40 PDF

    se5021

    Abstract: 2N3444 2N744 2N3606 PE5025 MPSH30 transistor 2N5134 cl-001 2N3252 2n3600
    Text: This Material Copyrighted By Its Respective Manufacturer NATL SEniCOND 6501130 Sfl {DISCRETE} NATL SEMICOND, ÏËJhSD113D DISCRETE 2 8C 0ID353âS 35388 0/ << £ ti z 'a £« St'S y — œ u< <»'—£ûrEç * £Û u - y f > g CN CO CD — s n< O O c n c


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    2N706 T0-18 2N743 2N744 2N753 se5021 2N3444 2N3606 PE5025 MPSH30 transistor 2N5134 cl-001 2N3252 2n3600 PDF

    um9c

    Abstract: 2N2846 2N3648 2n2848 2N3734 2N2242 2N2368 2N2369 2N2369A 2N2410
    Text: bl NPN METAL CAN «-V h FE at •c V CE V min ma mA V 15 15 15 15 30 5 4 4 4 5 40 20 40 40 30 120 40 120 120 120 10 10 10 10 150 1 1 1 1 10 15 40 40 , 40 40 6 15 20 20 20 4 5 6 5 5 30 40 50 25 40 150 120 150 — — 20 10 10 io 10 0.4 1 1 1 1 2N2784 2N2845


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    DDDQS16 2N2242 2N2368 2N2369 2N2369A 2N2410 N2475 2N2481 2N2501 CBR30 um9c 2N2846 2N3648 2n2848 2N3734 PDF