2N3417 equivalent

Abstract: 2N3417 st 833 2N3416 transistor 2n3416
Contextual Info: ST 2N3416 / 2N3417 NPN Silicon Epitaxial Planar Transistor General Purpose Amplifier For use as general purpose amplifiers and switches requiring collector current to 300 mA. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings* Ta = 25℃

Contextual Info: 2N3416 2N3417 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum RâtinÇjS Symbol T A = 25°C unless o th e rw ise noted

2N3417

Contextual Info: 2N3417 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N3417 Availability Online Store

2N3417

Abstract: 2N3416 PN100A
Contextual Info: SEMICONDUCTOR 2N3416 2N3417 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings*

2N3417

Abstract: NPN transistor ECB TO-92 transistor BO 540
Contextual Info: TO-92 2N3417 is NPN silicon planar transistor designed for general purpose AF medium power applications. ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 50V Collector-Emitter Voltage VCEO 50V Emitter-Base Voltage VE BO 5V Collector Current IC Total Power Dissipation

Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. =53 I> • 0504330 000356b 2 ■ AL6R S E M IC O N D S / IC S 93D 03586 PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C 2N3416 2N3417 TP3444

2N3606

Abstract: 2N3605 2N3564 2N3111 2N3694 2N3693 2n3194 2N3417 2N3662 2N3663
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Vceo ^CEO V EBO (V) Min (V) Min (V) Min PD 'c <W) (A) Tc=25"q 2N3417 50 50 5 0.625 0.1 2N3564 30 15 4 bßo VCB ' c e s V CE

2N3417

Abstract: transistor BO 540 NPN transistor ECB TO-92
Contextual Info: 2N3417 NPN SILICON TRANSISTOR TO-92 2N3417 is NPN silicon planar transistor designed for general purpose power applications. AF medium ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation

Contextual Info: S E M IG a N C L J C T Q R 2N3416 2N3417 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum RatinQS

transistor 2n3416 datasheet

Abstract: 2N3417 2N3416 transistor 2N3416 PN100A
Contextual Info: 2N3416 2N3417 E TO-92 CB NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings* Symbol

2N3417

Contextual Info: 2N3416 / 2N3417 2N3416 2N3417 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings*

Contextual Info: 2N3417 SILICON NPN TRANSISTOR DESCRIPTION: The 2N3417 is a Small Signal Transistor for General Purpose Low Level Amplifier and Switching Applications. PACKAGE STYLE TO- 92/TO- 98 MAXIMUM RATINGS 5OO mA Ic VcB Pd i s s so V 36O mW @ Ta " 25 0C Tj -55 0C to &15O 0C

transistor 2N3416

Abstract: 2N3416 2N3417 st 833
Contextual Info: ST 2N3416 / 2N3417 NPN Silicon Epitaxial Planar Transistor General Purpose Amplifier For use as general purpose amplifiers and switches requiring collector current to 300 mA. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings* Ta = 25℃

2N3414

Abstract: 2N3416
Contextual Info: CENTRAL SEMICONDUCTOR t.1 r - Z' f -Z'rX nimfc.3 □□00E54 0 X 2N3A1 sss&isfüieondöetoa' €@rp. Centrai s@mi€@näuetor Corp. Central Semiconductor Corp. Central semiconductor Corp. 5 2N3416 2N3417 JP> NPN Silicon Transistor 145 Adams Avenue Hauppauge, New York 1 1 7 8 8

2n3414

Abstract: 2N3416
Contextual Info: 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3414, MPS3414 series devices are silicon NPN transistors, manufactured by the epitaxial planar process, designed for general

Contextual Info: m 2N3417 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3417 is a Small Signal Transistor for General Purpose Low Level Amplifier and Switching Applications. PACKAGE STYLE T O -92 /T O -98 _ .205 |5 201 .1 7 5 4 451 OIA. i MAXIMUM RATINGS .210 |5 33 170 (4 32)

2N4288

Abstract: 2N3605 2N4249 2N3606 2N3694 2N3111 2n3194 2N3417 2N3564 2N3662
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Vceo (V) Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CEO V EBO (V) Min (V) Min PD 'c <W) (A) Tc=25"q 2N3417 50 50 5 0.625 0.1 2N3564 30 15 4 bßo VCB ' c e s V CE

2N3416

Abstract: 2N3417 PN100A
Contextual Info: S . e ; f v iiC 3 0 iN iU iU C T 0 R 2N3416 2N3417 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Rdtinys

Contextual Info: 2N3417 NPN Silicon Transistor General Purpose Amplifier TO−92 Type Package Description: The 2N3417 is a silicon NPN transistor in a TO−92 type package designed for use as a general purpose amplifier and switch requiring collector currents to 300mA. Absolute Maximum Ratings: TA = +255C, Note 1 unless otherwise specified

2N3417

Abstract: 2N3416 transistor 2n3416 datasheet CBVK741B019 F63TNR PN100A PN2222N 2n3416 transistor
Contextual Info: 2N3416 / 2N3417 2N3416 2N3417 B C TO-92 E NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. Absolute Maximum Ratings*

2N3415

Abstract: transistor 2n3415 2N3414 transistor 2n3414 MPS-3417 transistor 2N3416 2n3417 2N3416 NPN Silicon Epitaxial Planar Transistor to92 3414
Contextual Info: 2N3414 2N3415 2N3416 2N3417 MPS3414 MPS3415 MPS3416 MPS3417 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3414, MPS3414 series types are NPN silicon transistors, manufactured by the epitaxial planar process, designed for general

Contextual Info: IC 2N3417 NPN SILICON TRANSISTOR TO-92 2N3417 is NPN silicon planar transistor designed for general purpose power applications. AF medium ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCB0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current

2N3417

Abstract: 2N3416 st 833 transistor 2n3416 2n3416 transistor
Contextual Info: ST 2N3416 / 2N3417 NPN Silicon Epitaxial Planar Transistor General Purpose Amplifier For use as general purpose amplifiers and switches requiring collector current to 300 mA. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings* Ta = 25℃

2N3606

Abstract: 2N3564 2N3605 2N3693 2N3694 2N3827 2N3901 npn transistor to 92 2N3607 2N3417
Contextual Info: TO-92 Plastic Package Traiisistors NPN Electrical Characteristics (Ta=25°C, Unless Otherw se Spec fied) Maximum Ratings Type No. 'c (W) A) 5Tc=25“( hFE @ lc & (mA) ^CEO (V) Min (V) Min •Vro (V) Min 2N3417 50 50 5 0.625 ),1 0.1 50 80 540 2 2N3564 30