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    2N3506L Price and Stock

    Microchip Technology Inc 2N3506L

    NPN POWER SILICON TRANSISTORS
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    Microchip Technology Inc JAN2N3506L

    TRANS NPN 40V 3A TO5
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    Microchip Technology Inc JANS2N3506L

    POWER BJT
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    Microchip Technology Inc JANTX2N3506L

    TRANS NPN 40V 3A TO5
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    Microchip Technology Inc JANTXV2N3506L

    TRANS NPN 40V 3A TO5
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    2N3506L Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3506L Defense Supply Center Columbus NPN Silicon Switching Transistor Original PDF
    2N3506L Microsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - NPN POWER SILICON TRANSISTORS Original PDF
    2N3506L Semelab Bipolar NPN Device in a Hermetically Sealed TO5 Metal Package - Pol=NPN / Pkg=TO5 / Vceo=40 / Ic=3 / Hfe=40/120 / fT(Hz)=60M / Pwr(W)=1 Original PDF
    2N3506L Semico NPN transistor Original PDF
    2N3506L Semico Chip: geometry 1506 polarity NPN - Pol=NPN / Pkg=TO5 / Vceo=40 / Ic=3 / Hfe=40/120 / fT(Hz)=60M / Pwr(W)=1 Original PDF
    2N3506LJ Semico Package = TO-5 Level = Jans Vceo (V) = 40 Vcbo (V) = 60 Vebo (V) = 5.0 Ic (A) = 3.00 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 200 VCE(sat) (V) = 1.00 Original PDF
    2N3506LJS Semico Package = TO-5 Level = Jans Vceo (V) = 40 Vcbo (V) = 60 Vebo (V) = 5.0 Ic (A) = 3.00 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 200 VCE(sat) (V) = 1.00 Original PDF
    2N3506LJV Semico Package = TO-5 Level = Jans Vceo (V) = 40 Vcbo (V) = 60 Vebo (V) = 5.0 Ic (A) = 3.00 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 200 VCE(sat) (V) = 1.00 Original PDF
    2N3506LJX Semico Package = TO-5 Level = Jans Vceo (V) = 40 Vcbo (V) = 60 Vebo (V) = 5.0 Ic (A) = 3.00 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 200 VCE(sat) (V) = 1.00 Original PDF

    2N3506L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N3506L Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3506LJ


    Original     		PDF 2N3506L MIL-PRF-19500 2N3506LJ) 2N3506LJX) 2N3506LJV) 2N3506LJS) MIL-STD-750 MIL-PRF-19500/349

    Untitled

    Abstract: No abstract text available
    Text: 2N3506L Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N3506LJ • JANTX level (2N3506LJX)


    Original     		PDF 2N3506L MIL-PRF-19500 2N3506LJ) 2N3506LJX) 2N3506LJV) 2N3506LJS) MIL-STD-750 MIL-PRF-19500/349

    2N3506L

    Abstract: No abstract text available
    Text: Data Sheet No. 2N3506L Generic Part Number: 2N3506L Type 2N3506L Geometry 1506 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/349 Features: • General-purpose silicon transistor for switching and amplifier applications. • Housed in TO-5 case.


    Original     		PDF 2N3506L MIL-PRF-19500/349 MIL-PRF-19500/349 2N3506L

    Untitled

    Abstract: No abstract text available
    Text: 2N3506L thru 2N3507AL Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506L through 2N3507AL high-frequency, epitaxial planar transistors feature


    Original     		PDF 2N3506L 2N3507AL MIL-PRF-19500/349 2N3507AL 2N3506 2N3507 T4-LDS-0016-1,

    Untitled

    Abstract: No abstract text available
    Text: 2N3506L Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N3506LJ • JANTX level (2N3506LJX)


    Original     		PDF 2N3506L MIL-PRF-19500 2N3506LJ) 2N3506LJX) 2N3506LJV) 2N3506LJS) MIL-STD-750 MIL-PRF-19500/349

    2N3506L

    Abstract: 2N3506LJ 2N3506LJS 2N3506LJV 2N3506LJX
    Text: 2N3506L Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3506LJ


    Original     		PDF 2N3506L MIL-PRF-19500 2N3506LJ) 2N3506LJX) 2N3506LJV) 2N3506LJS) MIL-STD-750 MIL-PRF-19500/349 2N3506L 2N3506LJ 2N3506LJS 2N3506LJV 2N3506LJX

    2N3506L

    Abstract: No abstract text available
    Text: 2N3506L Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.


    Original     		PDF 2N3506L O205AA) 20-Aug-02 2N3506L

    2N3507

    Abstract: 2N3506 2N3506A 2N3506AL 2N3506L 2N3507A 2N3507AL 2N3507L 2N3507 JANTX 072040
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES LEVELS 2N3506 2N3506A 2N3506L 2N3506AL


    Original     		PDF MIL-PRF-19500/349 2N3506 2N3506A 2N3506L 2N3506AL 2N3507 2N3507A 2N3507L 2N3507AL 2N3507 2N3506 2N3506A 2N3506AL 2N3506L 2N3507A 2N3507AL 2N3507L 2N3507 JANTX 072040

    Untitled

    Abstract: No abstract text available
    Text: 2N3506L thru 2N3507AL Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506L through 2N3507AL high-frequency, epitaxial planar transistors feature


    Original     		PDF 2N3506L 2N3507AL MIL-PRF-19500/349 2N3506 2N3507 T4-LDS-0016-1,

    1506

    Abstract: 2N3507 2C3506 2N3506 2N3506L 2N3507L 22KA chip type geometry
    Text: Data Sheet No. 2C3506 Generic Packaged Parts: Chip Type 2C3506 Geometry 1506 Polarity NPN 2N3506, 2N3507 Chip type 2C3506 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for high current, high speed saturated switching and


    Original     		PDF 2C3506 2N3506, 2N3507 2C3506 2N3506L, 2N3507, 2N3507L 1506 2N3507 2N3506 2N3506L 2N3507L 22KA chip type geometry

    U4 Package

    Abstract: 2N3507U4
    Text: 2N3506U4 thru 2N3507AU4 Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. The


    Original     		PDF 2N3506U4 2N3507AU4 MIL-PRF-19500/349 2N3507AU4 LDS-0016-2, U4 Package 2N3507U4

    2N3507U4

    Abstract: No abstract text available
    Text: 2N3506U4 thru 2N3507AU4 Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. The


    Original     		PDF 2N3506U4 2N3507AU4 MIL-PRF-19500/349 2N3507AU4 LDS-0016-2, 2N3507U4

    2N3506

    Abstract: 2N3506A 2N3506AL 2N3506L 2N3507 2N3507A 2N3507AL 2N3507L
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 November 2000. INCH-POUND MIL-PRF-19500/349E 28 August 2000 SUPERSEDING MIL-PRF-19500/349D 12 December 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING


    Original     		PDF MIL-PRF-19500/349E MIL-PRF-19500/349D 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3507, 2N3507L, 2N3507A, 2N3507AL, 2N3506 2N3506A 2N3506AL 2N3506L 2N3507 2N3507A 2N3507AL 2N3507L

    2N3507 equivalent

    Abstract: 2N3506 2N3507
    Text: 2N3506 thru 2N3507A Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of 2N3506 through 2N3507A high-frequency, epitaxial planar transistors feature


    Original     		PDF 2N3506 2N3507A MIL-PRF-19500/349 T4-LDS-0016, 2N3507 equivalent 2N3507

    2N3507

    Abstract: 2N3506 2N3506A 2N3506AL 2N3506L 2N3507A 2N3507L 2N3507 equivalent
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 25 November 2009. MIL-PRF-19500/349H 25 August 2009 SUPERSEDING MIL-PRF-19500/349G 1 August 2006 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING,


    Original     		PDF MIL-PRF-19500/349H MIL-PRF-19500/349G 2N3506, 2N3506A, 2N3506L, 2N3506AL, 2N3506U4, 2N3506AU4, 2N3507, 2N3507L, 2N3507 2N3506 2N3506A 2N3506AL 2N3506L 2N3507A 2N3507L 2N3507 equivalent

    2N3507U4

    Abstract: No abstract text available
    Text: 2N3506U4 thru 2N3507AU4 Qualified Levels: JAN, JANTX and JANTXV NPN MEDIUM POWER SILICON TRANSISTOR Available on commercial versions Qualified per MIL-PRF-19500/349 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. The


    Original     		PDF 2N3506U4 2N3507AU4 MIL-PRF-19500/349 2N3507AU4 LDS-0016-2, 2N3507U4

    Untitled

    Abstract: No abstract text available
    Text: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr Data S heet No. 2N 3506L 1 1 I I ^88888 % # 1 $ id L S E M IC O N D U C T O R S G eneric Part Num ber: 2N3506L Type 2N3506L G eom etry 1506 Polarity NPN Qual Level: JAN - JA NTXV


    OCR Scan     		PDF 3506L 2N3506L MIL-PRF-19500/349 100kHz<