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    2N3762 Price and Stock

    Microchip Technology Inc 2N3762

    TRANS PNP 40V 1.5A TO39
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    Microchip Technology Inc 2N3762L

    PNP TRANSISTOR
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    Microchip Technology Inc 2N3762U4

    POWER BJT
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    Microchip Technology Inc JAN2N3762

    TRANS PNP 40V 1.5A TO39
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    Microchip Technology Inc JANTX2N3762

    TRANS PNP 40V 1.5A TO39
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    2N3762 Datasheets (45)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3762 Central Semiconductor BJT, PNP, Silicon Epitaxial Transistor, IC 1.5A - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=1.5 / Hfe=30-120 / fT(Hz)=180M / Pwr(W)=1 Original PDF
    2N3762 Microsemi PNP Switching Silicon Transistor Original PDF
    2N3762 Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=1.5 / Hfe=30-120 / fT(Hz)=180M / Pwr(W)=1 Original PDF
    2N3762 Semico Type 2N3762 Geometry 6706 Polarity PNP - Pol=PNP / Pkg=TO39 / Vceo=40 / Ic=1.5 / Hfe=30-120 / fT(Hz)=180M / Pwr(W)=1 Original PDF
    2N3762 Advanced Semiconductor Silicon Transistors Scan PDF
    2N3762 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3762 Motorola European Master Selection Guide 1986 Scan PDF
    2N3762 Motorola Power Transistor Selection Guide Scan PDF
    2N3762 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3762 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3762 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3762 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3762 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N3762 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3762 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3762 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3762 Unknown Vintage Transistor Datasheets Scan PDF
    2N3762 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3762 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3762 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N3762 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 973 378-2982 (212) 227-8008 FAX: (973) 3784080 2N3762 (SILICON) Medium-current PNP silicon annular transistor, designed for high-speed switching and driver applications. MAXIMUM RATINGS |TA • 7»«C urltwoihnww nai


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    2N3762 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3762 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


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    2N3762 O205AD) 17-Jul-02 PDF

    2N3762

    Abstract: No abstract text available
    Text: 2N3762 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


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    2N3762 O205AD) 1-Aug-02 2N3762 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3762+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2N3762 Freq180M time35n PDF

    2n3762

    Abstract: No abstract text available
    Text: Data Sheet No. 2N3762 Generic Part Number: 2N3762 Type 2N3762 Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/396 Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-39 case. Also available in chip form using


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    2N3762 MIL-PRF-19500/396 MIL-PRF-19500/396 MIL-S-19500/396D 2n3762 PDF

    2N3762

    Abstract: No abstract text available
    Text: TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 396 Devices 2N3762 2N3762L Qualified Level 2N3763 2N3763L 2N3764 JAN JANTX JANTXV 2N3765 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage


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    MIL-PRF-19500/ 2N3762 2N3762L 2N3763 2N3763L 2N3764 2N3765 2N3762* 2N3763* 2N3762 PDF

    2N5161

    Abstract: KT814a B0136 35N15 NS02 KT814B B0826
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 MH0811 MH0812 MH0813 2SA1220 2SA766 2SA1220A 2N3762A 2N3762A ~~~~g~A 30 2SA738 PE8550 JE9112A 2SA683 2SA751 JE9112B JE8550B JE8550B - j~~~~g 25 35 -40 JE8550C JE85500 JE85500 JE91120 2N3660 PE8551 NB321K


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    2SA1486 TRSP6006 2SA1413Z TRSP7006 TRSP8006 2SBl141 2SA1438 2SA1562 MH0821 2N5161 KT814a B0136 35N15 NS02 KT814B B0826 PDF

    2N3762

    Abstract: TO206AB 2N3763S
    Text: TECHNICAL DATA 2N3762, 2N3762L JAN, JTX, JTXV 2N3763, 2N3763L JAN, JTX, JTXV 2N3764 JAN, JTX, JTXV 2N3765 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/396 PNP SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N3762, L 2N3764 2N3763, L


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    2N3762, 2N3762L 2N3763, 2N3763L 2N3764 2N3765 MIL-PRF-19500/396 2N3764 2N3762 TO206AB 2N3763S PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3762+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2N3762 Freq180M time35n PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3762 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


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    2N3762 O205AD) 19-Jun-02 PDF

    2n3762

    Abstract: 2N3765 2N3763 2N3762L 2N3763L 2N3764
    Text: TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396 Devices 2N3762 2N3762L Qualified Level 2N3763 2N3763L 2N3764 JAN JANTX JANTXV 2N3765 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage


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    MIL-PRF-19500/396 2N3762 2N3762L 2N3763 2N3763L 2N3764 2N3765 2N3762* 2N3763* 2n3762 2N3765 2N3763 2N3762L 2N3763L 2N3764 PDF

    2N3467

    Abstract: 2n3762 chip type geometry 2N37
    Text: Data Sheet No. 2C3762 Generic Packaged Parts: Chip Type 2C3762 Geometry 6706 Polarity PNP 2N3467, 2N3467L, 2N3468, 2N3468L, 2N3762, 2N3762L, 2N3763, 2N3763L, 2N3764, 2N3765 30 MILS B E 30 MILS Chip type 2C3762 by Semicoa Semiconductors provides performance


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    2C3762 2C3762 2N3467, 2N3467L, 2N3468, 2N3468L, 2N3762, 2N3762L, 2N3763, 2N3763L, 2N3467 2n3762 chip type geometry 2N37 PDF

    2N3762L

    Abstract: No abstract text available
    Text: Data Sheet No. 2N3762L Generic Part Number: 2N3762L Type 2N3762L Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/396 Features: • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-5 case.


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    2N3762L MIL-PRF-19500/396 MIL-PRF-19500/396 MIL-S-19500/396D 2N3762L PDF

    2N3762

    Abstract: No abstract text available
    Text: 2N3762 Chip: 5.0V; 1.5A; Geometry 6706; Polarity PNP 8.39 Transistors. 1 of 2 Home Part Number: 2N3762 Online Store 2N3762 Diodes C hip: 5 .0 V; 1 .5 A; G eo m et ry 6 7 0 6 ; Po larit y PNP Transistors


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    2N3762 com/2n3762 2N3762 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3762+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2N3762 Freq180M time35n PDF

    MJ10009

    Abstract: 1N4937 2N3762 MTP3055E
    Text: ON Semiconductort MJ10009 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for high–voltage,


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    MJ10009 MJ10009 r14525 MJ10009/D 1N4937 2N3762 MTP3055E PDF

    Untitled

    Abstract: No abstract text available
    Text: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr Da ta S h e e t No. 2 N 3 7 6 2 1 1 I I ^88888 % # 1 $ idL SEMICONDUCTORS G eneric Part Num ber: 2N3762 Type 2N3762 G eom etry 6706 Polarity PNP Qual Level: JAN - JA NTXV


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    2N3762 MiL-PRF-19500/396 MIL-S-19500/396D PDF

    2N3762

    Abstract: No abstract text available
    Text: SEM ICONDUCTOR TECHNICAL DATA 2N3762JAN, JT X , 2 N 3 7 6 3 JA N ,JT X , 2N3764JAN, JT X , 2N3765JAN, JT X , JT X V JT X V JTX V , JA N S JT X V CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkor.Koma N.Y. 11779 Processed per MIL-S-19500 396 PNP Silicon Sm all-Signal Transisto rs


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    2N3762JAN, 2N3764JAN, 2N3765JAN, MIL-S-19500 O-205AO O-391 2N37M 7N37M 2N3762 PDF

    Untitled

    Abstract: No abstract text available
    Text: p semcofl ¿888888888 |M iwiHBBffi m sssBP .rfHHHHHHHHMh. ititn nnnn hhhhhhk-. ><>niftBHhr 1 1 I I ^88888 % # 1 D at a S h e e t No. 2 N 3 7 6 2 L $ idL SEMICONDUCTORS G eneric Part Number: 2N3762L Type 2N3762L G eom etry 6706 Polarity PNP Qual Level: JAN - JA NTXV


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    2N3762L MiL-PRF-19500/396 MIL-S-19500/396D PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR • ■ m h h h b m h b h h h m m » —« — TECHNICAL DATA 2N3762 2N3763 2N3764 2N3765 CRYSTAIONCS 2805 Veterans Highway o N P , ? c iC O n , T - , Small-Signal Transistors Roilkonkoma, N.Y. ,1770 designed lor general-purpose switching applications


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    2N3762 2N3763 2N3764 2N3765 2N3765 PDF

    2N3762

    Abstract: No abstract text available
    Text: M A X IM U M RATINGS Symbol Value C o llector-E m itter Voltage VCEO -4 0 Vdc C ollector-Base Voltage VCBO -4 0 Vdc Em itter-Base Voltage vebo - 5 .0 Vdc 'c - 1 .5 Ade Rating C ollector C urrent — Continuous Unit TO-39 2N3762 Total Device D issipation n T a = 2 5 X


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    2N3762 2N3762 PDF

    SILICON SMALL-SIGNAL DICE

    Abstract: No abstract text available
    Text: MOTOROLA SC {D IO DES /OPTO} 34 SILICON SMALL-SIGNAL TRANSISTOR DICE continued D I b3fc725S D037TÌD 34C 37990 T- 3 7 " ( S ' 2C3762 DIE NO. — PNP LINE SOURCE — DSL60 This die provides performance similar to that of the following device types: (SÌ 2N3762


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    b3fc725S D037T DSL60 2C3762 2N3762 2N3763 2N3764 2N3765 SILICON SMALL-SIGNAL DICE PDF

    2N3762

    Abstract: 2N3763 MOTOROLA
    Text: MOTOROLA SC XSTRS/R 12E D I b 3b7a5M 00ab3t,7 fl | T - 3 7 -/ r M A X IM U M R A T IN G S Sym bol 2N3762 2N3764 2N3763 2N3765 Coliector-E m itter V olta g e V C EO 40 60 Vdc Collector-B ase V oltag e V cB O 40 60 Vdc Em itter-Base V oltag e vebo 5.0 Vdc ic


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    2N3762 2N3764 2N3763 2N3765 00ab3t 2N3763 MOTOROLA PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF