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    2N400 Price and Stock

    Microchip Technology Inc 2N4002

    POWER BJT
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    Microchip Technology Inc 2N4002 36 Weeks
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    Onlinecomponents.com 2N4002
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    NAC 2N4002 1
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    CTS Corporation 532N40020DTT

    5.0mm x 3.2mm Surface Mount Clip
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    CTS Corporation 532N40025ITT

    5.0mm x 3.2mm Surface Mount Clip
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    CTS Corporation 532N40010ITT

    5.0mm x 3.2mm Surface Mount Clip
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    CTS Corporation 532N40015DTT

    5.0mm x 3.2mm Surface Mount Clip
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    DigiKey 532N40015DTT Reel 1,000
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    Find more 2N400 price and stock on Findchips.com

    2N400 Datasheets (201)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N400 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N400 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N400 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N400 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N400 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N400 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N400 Unknown Vintage Transistor Datasheets Scan PDF
    2N400 Unknown GE Transistor Specifications Scan PDF
    2N400 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N400 Semitron Germanium Power Transistors Scan PDF
    2N4000 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=1 Original PDF
    2N4000 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=1 Original PDF
    2N4000 Advanced Semiconductor Silicon Transistors Scan PDF
    2N4000 API Electronics Transistor Selection Guide Scan PDF
    2N4000 API Electronics Short form transistor data Short Form PDF
    2N4000 API Electronics Short form transistor data Short Form PDF
    2N4000 Central Semiconductor NPN METAL CAN Transistors Scan PDF
    2N4000 Central Semiconductor NPN Metal Can Transistors - Switching / General Purpose / Saturated Switch Scan PDF
    2N4000 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N4000 Ferranti Semiconductors Power Transistors 1977 Scan PDF
    ...

    2N400 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N4001 diode

    Abstract: 2N4001 diode 2n4001 Transistor 2N4001 equivalent transistor 2n4001
    Text: 2N4001 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original     		2N4001 O205AD) 1-Aug-02 2N4001 diode 2N4001 diode 2n4001 Transistor 2N4001 equivalent transistor 2n4001 PDF

    2N4001

    Abstract: 2n4001 TRANSISTOR Transistor 2N4001
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4001 • Low Power • Hermetic TO-39 Metal package. • Ideally suited for Medium Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


    Original     		2N4001 O-205AD) 2N4001 2n4001 TRANSISTOR Transistor 2N4001 PDF

    2N4001

    Abstract: No abstract text available
    Text: 2N4001 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original     		2N4001 O205AD) 19-Jun-02 2N4001 PDF

    AD132

    Abstract: 2N400 2N2140A ad131 MP2144 germanium AD140
    Text: POWER GERMANIUM PNP Item Number Part Number I C 5 10 15 20 >= 2N257G 2N2578 2N1759 NKT450 2N2358 2N2368 2N2553 2N2557 AUY33 2N11838 2N1038 TI367 TI367 TI367A TI367A 2N3159 AD140 AD140 AD140 AD153 ~~~~~ 25 30 2N1359 2N235A 2N399 2N401 2N1184B 2N400 2N236 2N236A


    Original     		PDF

    2N4007 diode

    Abstract: Transistor NEC 12d KT501A 2U diode PB6015A PB6015B KT209B 2u 85 kts3103b 2SA1362Y
    Text: LOW-POWER SILICON PNP Item Number Part Number HA7806 HA7808 HA7808 MPSH69 2N2005 2N2334 2N2335 2N3318 2N917 2Nl024 10 ~~~~;~ 2S3021 2S3021 2N2004 2N1228 2N2370 2N2372 2S3221 2Nl027 15 20 ~~~~H 2N862 KT209A KT501A KT501B BCY49 2N1229 2N4007 A5T5221 2N5221 2N995


    Original     		HA7806 HA7808 MPSH69 2N2005 2N2334 2N2335 2N3318 2N917 2Nl024 2N4007 diode Transistor NEC 12d KT501A 2U diode PB6015A PB6015B KT209B 2u 85 kts3103b 2SA1362Y PDF

    MPS9680

    Abstract: transistor 2N4258 2N2002 2N2424 2N2425 LOW-POWER SILICON PNP OC202 sor2894 BCY24 CS9020
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 2N2165 2N2166 2N2162 2N2163 2N2167 2N2164 2N1676 2N1677 2N2002 2N2003 ~~~~~~ 15 20 2N3764A 2N3764A 2N2424 BC201 2N3319 2N2280 2N2281 2N864 ~N14~~ 25 30 2N1428 2N1429 2N864A 2N864A 2N864A 2N4006 2N2177 2N2178


    Original     		2N2165 2N2166 2N2162 2N2163 2N2167 2N2164 2N1676 2N1677 2N2002 2N2003 MPS9680 transistor 2N4258 2N2424 2N2425 LOW-POWER SILICON PNP OC202 sor2894 BCY24 CS9020 PDF

    2N4001 diode

    Abstract: 2N2990 MT27 2N3665 2N4001 diode 2n4001 2N2987 2N2988 2N2989 2N2991
    Text: Device Type VCEO hFE V Min/Max 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2N3665 2N3666 2N3766 2N3767 2N4000 2N4001 2N4237 2N4238 2N4239 2N4910 2N4911 2N4912 2N5660 2N5661 2N5662 2N5663 2N5681 2N5682 80 100 80 100 80 100 80 100


    Original     		2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2N4001 diode 2N2990 MT27 2N3665 2N4001 diode 2n4001 2N2987 2N2988 2N2989 2N2991 PDF

    Transistor 2N4001

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4001 • Low Power • Hermetic TO-39 Metal package. • Ideally suited for Medium Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


    Original     		2N4001 71mW/Â O-205AD) Transistor 2N4001 PDF

    Untitled

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ THRU 2N4003NLT1 FM1200-M+ Small Signal MOSFET 30V,0.56A, SOT-23 1.0A SURFACE MOUNT SCHOTTKY BARRIER Single, RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers


    Original     		OT-23 OD-123+ FM120-M+ 2N4003NLTHRU FM1200-M+ OD-123H 125and FM120-MH FM130-MH FM140-MH PDF

    TIP290

    Abstract: 2N4001 diode MJ029C 2SC1624Y TIP-290 2N2202 BDY66 2SC16250 2N2204 TO-202AC
    Text: POWER SILICON NPN Item Number Part Number I e 5 10 15 20 >= 30 BC618l 2N2405 2N2405S 2N2405S oTl1634 2N2611 SSP58C MJ029C b!F~f~4 35 40 BD400 2N2201 2N2202 2N2203 2N2204 2N2988 2N2992 2N2472 ~~~:~~ 45 50 2N2995 STll0 STll05 SVT100-5 DTl1654 2N5681 2N4001


    Original     		O-220var OT-186 O-220 O-220AB TIP290 2N4001 diode MJ029C 2SC1624Y TIP-290 2N2202 BDY66 2SC16250 2N2204 TO-202AC PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N4003K N-Channel Enhancement Mode Power MOSFET 3 DRAIN P b Lead Pb -Free 1 GATE Features: * Gate Pretection Diode DRAIN CURRENT 0.5 AMPERES DRAIN SOUCE VOLTAGE 30 VOLTAGE * * Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design. * Low Gate Charge for Fast Switching.


    Original     		2N4003K OT-23 08-Sep-09 OT-23 PDF

    2N4000

    Abstract: No abstract text available
    Text: 2N4000 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original     		2N4000 O205AD) 1-Aug-02 2N4000 PDF

    2N4001 diode

    Abstract: diode 2n4001 2n4001 diode 2N4000 2N4000 Transistor 2N4001 2n4001 TRANSISTOR EM 5135 diode
    Text: TYPES 2N4000, 2N4001 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS FOR HIGH-SPEED POWER SWITCHING APPLICATIONS o f TM • 15 W at 100°C Case Temperature £| • Max VcE iai of 0.3 V at 0.5 • Max ton of 300 nsat 0.5 A lc • Min f T of 40 MHz Alc g |


    OCR Scan     		2N4000, 2N4001 2N4000 2N4001 diode diode 2n4001 diode 2N4000 Transistor 2N4001 2n4001 TRANSISTOR EM 5135 diode PDF

    2N4004

    Abstract: 2N4005 diode ln 4004 silicon diode 4004
    Text: TYPES 2N4004, 2N4005 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTORS NO. DL-S 668607, SEPTEMBER • 20 A Rated Collector Current • 40 Watts at 100°C Case Temperature • Maximum V a sat of 1 V at 20 A • Maximum V BE of 1.6 V at 20 A • Maximum ton of 1 /¿s at 10 A


    OCR Scan     		2N4004, 2N4005 2N4005 PR00UCT 2N4004 diode ln 4004 silicon diode 4004 PDF

    2N4003

    Abstract: 2N4002
    Text: General ^ Semiconductor J-JjC - Industries, Inc. 2N4002 2N4003 NPN SILICON POWER TRANSISTORS D IF F U S E D S IL IC O N E P IT A X IA L P A S S IV A T E D T R A N S IS T O R S These NPN devices are designed for use in high power switching and untuned amplifier applications.


    OCR Scan     		2N4002 2N4003 2N4003 PDF

    Untitled

    Abstract: No abstract text available
    Text: COLLECTOR CURRENT = 2 AMPS NPN TYPES 2N1720 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666 2N3766 2N3767 2N3917 2N3918 2N4000 2N4001 2N4237 2N4238 2N4239 2N4240 2N4862 2N4863 2N4864 2N4910 2N4911 2N4912 2N5050


    OCR Scan     		2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719 PDF

    N4001

    Abstract: to-39 TO39 2N3419 BUY80 BUX 34 npn 2a 2N3421 2N4036 2N4037
    Text: PLANAR SWITCHING PLANAR SW ITCHING TRANSISTOR SELECTOR CHART Devices listed are NPN except where marked w ith * which signifies PNP. Package TO-39 V ceo 1A 40 2N4037* 60 2N4036* 80 2N4000 100 2 N4001 TO-39 TO-39 TO-39 TO-39 TO-39 2A 3A 5A 7 5A 10A BUY81 BUY92*


    OCR Scan     		2N4037 BSV60 2N4036* BSV64 BFX34 2N3418 N3420 BUY90* BUX34 BUY80 N4001 to-39 TO39 2N3419 BUX 34 npn 2a 2N3421 2N4036 2N4037 PDF

    2N4003

    Abstract: 2N4002 N4003 Solidev Semiconductors Solidev 35074H
    Text: Solidev Sem iconductors Silicon Power Transistors Silicon N P N Power Transistors— 30 A m p p h y s ic a l d im e n s io n s REFEREN CE T A B L E C ode Stock No. 2N4002 2N4003 35073X 35074H A B S O L U T E M A X IM U M R A T IN G S 2N4002 2N4003 B V c e o V


    OCR Scan     		2N4002 35073X 2N4003 35074H VCE-110V ce-40V lc-20A N4003 Solidev Semiconductors Solidev 35074H PDF

    2N40361

    Abstract: BUX34 N4001 2N3418 2N4036 2N4037 BFX34 BSV60 BSV64 BUY80
    Text: PLANAR SWITCHING PLAN AR SW ITC H IN G T R A N S IS T O R S E LE C T O R C H A R T Devices listed are NPN except where marked with* which signifies PNP. Package TO-39 V ceo 1A 40 2N4037* 60 2N4036* 80 2N4000 100 2 N4001 Volts TO-39 TO-39 TO-39 TO-39 TO-39


    OCR Scan     		2N4037 BSV60 2N4036* BSV64 BFX34 2N3418 N3420 BUY90* BUX34 BUY80 2N40361 N4001 2N4036 2N4037 BSV60 PDF

    JANTX2N5109

    Abstract: JANTX2N3735 23219 2n2107 jantx2n3866
    Text: Microsemi NPN Transistors Part Number 2N5109 JAN2N5109 JANTX2N5109 JANTXV2N5109 2N3866A JAN2N3866A JANTX2N3866A JANTXV2N3866A 2N2106 2N2107 2N2108 2N3498 2N3499 JAN2N3498 JAN2N3499 JANTX2N3498 JANTX2N3499 JANTXV2N3498 JANTXV2N3499 2N2726 2N2727 2N4000 2N4001


    OCR Scan     		PDF

    2n2019

    Abstract: 2n2018 2N545
    Text: Ic = t .0 AMPS bvceo PACKAGE 2N545 2N546 2N547 2N548 2N549 2N550 2N1052 2N1054 2N1055 2N1116 2N1117 2N1252 2N1253 2N1445 2N1700 2N1714 2N1715 2N1716 2N1717 2N1983 2N1984 2N1985 2N2018 2N2019 2N2150 2N2151 2N2987 2N2988 2N2989 2N2990 2N3262 2N3739 2N4000 2N4001


    OCR Scan     		2N545 2N546 2N547 2N548 2N549 2N550 2N1052 2N1054 2N1055 2N1116 2n2019 2n2018 PDF

    KH 4007

    Abstract: 257975,BOSE BOSE NS2N 2N4006
    Text: PREMIUM PERFORMANCE ULTRA LOWrec sat 2N4006 THRU 2N4011 SILICON EPITAXIAL JUNCTION PNP SWITCHING TRANSISTORS GEO M ETRY 292 • • • • rgc (atl 3 Ohms Typical L O W C ,b LOW L EA K A G E HIGH B V e b o ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS: Ta = 25°C (UNLESS OTHERWISE STATED)


    OCR Scan     		2N4006 2N4011 2N4008 140kH KH 4007 257975,BOSE BOSE NS2N PDF

    N4003

    Abstract: 2n6322 TO63 2N6323 2n6324 2N6325 2N6271 2N6272 2N6273
    Text: Discrete Semiconductors T e x a s In s t r u m e n t s Metal Can Power/High Reliability Professional Types continued Device Polarity Outline Type 2N6272 2N4003 2N6271 2N6273 2N6322 2N6323 2N6324 2N6325 NPN NPN NPN NPN NPN NPN NPN NPN TO-63 TO-63 TO-3 TO-63


    OCR Scan     		2N6272 N4003 2N6271 2N6273 2N6322 2N6323 2N6324 2N6325 TO63 PDF

    2N4007

    Abstract: 2N4009 2N4011 2N4010 2N4006 teledyne crystalonics bose 2N4008
    Text: PREMIUM PERFORMANCE U LTR A LOWrec sat 2N4006 THRU 2IM4011 SILICON E PITA X IA L JUNCTION PNP SWITCHING TRANSISTORS GEOMETRY 292, PG. 57 • f£c 3 Ohms Typical • LOW Ceb • LOW LEAKAGE • HIGH B V fbo ELECTRICAL DATA ABSOLUTE M A XIM U M RATING S SYMBOL


    OCR Scan     		2N4006 2N4011 2N4006 2N4009 2N4007 2N4010 2N4008 2N4011 40kHz 140kHz teledyne crystalonics bose PDF