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Microchip Technology Inc 2N4261 TRANS PNP 15V 0.03A TO72
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DigiKey	2N4261	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
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	2N4261	Reel			100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
NAC	2N4261				100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics LLC 2N4264 TRANS NPN 15V 0.2A TO92
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DigiKey	2N4264	Bulk			1,402	1 - 10 - 100 - 1000 - 10000 $0.21	Buy Now
Microchip Technology Inc 2N4261UB TRANS PNP 15V 0.03A UB
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DigiKey	2N4261UB	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
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Microchip Technology Inc JAN2N4261 TRANS PNP 15V 0.03A TO72
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Microchip Technology Inc JAN2N4261UB TRANS PNP 15V 0.03A UB
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NAC	JAN2N4261UB				100	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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2N426 Datasheets (125)

Part	Manufacturer	Description	Datasheet Type	PDF
2N426	Germanium Power Devices	Germanium PNP Mesa Transistors	Scan	PDF
2N426	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N426	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N426	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N426	Unknown	GE Transistor Specifications	Scan	PDF
2N426	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N426	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N426	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N426	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N426	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N426	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N426	Semitron	Alloy Junction Germanium Transistor	Scan	PDF
2N426	Semitronics	Alloy-Junction Germanium Transistors	Scan	PDF
2N4260	Semico	Chip Type 2C4261 Geometry 0014 Polarity PNP - Pol=PNP / Pkg=TO72 / Vceo=15 / Ic=30m / Hfe=25min / fT(Hz)=.6G / Pwr(W)=0.2	Original	PDF

2N4260	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N4260	Motorola	The European Selection Data Book 1976	Scan	PDF
2N4260	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N4260	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N4260	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N4260	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF

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2N426 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N4261 Abstract: 2N4261UB Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/511 DEVICES LEVELS 2N4261 2N4261UB JAN JANTX JANTXV	Original	MIL-PRF-19500/511 2N4261 2N4261UB 2N4261UB, T4-LDS-0150 2N4261 2N4261UB	PDF
Untitled Abstract: No abstract text available Text: 2N4262 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100n÷ @V(CBO) (V) (Test Condition)	Original	2N4262 Freq900M	PDF
Untitled Abstract: No abstract text available Text: ^s.m.i-Condimto'i 'Lpioaucti, One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N4261 Polarity PNP Features: • • Fast switching small signal silicon transistor. Housed in a TO-72 case.	Original	2N4261 -65to	PDF
2N4261 Abstract: 2N4261J 2N4261JS 2N4261JV 2N4261JX Text: 2N4261 Silicon PNP Transistor D a ta S h e e t Description Applications Semicoa offers: • General purpose switching transistor • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4261J • JANTX level (2N4261JX)	Original	2N4261 MIL-PRF-19500 2N4261J) 2N4261JX) 2N4261JV) 2N4261JS) MIL-STD-750 MIL-PRF-19500/511 2N4261 2N4261J 2N4261JS 2N4261JV 2N4261JX	PDF
Untitled Abstract: No abstract text available Text: 2N4269S Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 140V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products	Original	2N4269S O206AA) 10/10m 16-Jul-02	PDF
Untitled Abstract: No abstract text available Text: 2N4261UB Compliant available PNP Small Signal Silicon Transistor Qualified per MIL-PRF-19500/511 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This 2N4261UB small signal transistor features ceramic bodied construction with a metal lid for military grade products per MIL-PRF-19500/511. It is also available with a ceramic lid in the	Original	2N4261UB MIL-PRF-19500/511 2N4261UB MIL-PRF-19500/511. 2N4261 T4-LDS-0150-1,	PDF
2N4261 Abstract: 2N4261J 2N4261JS 2N4261JV 2N4261JX Text: 2N4261 Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching transistor • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N4261J	Original	2N4261 MIL-PRF-19500 2N4261J) 2N4261JX) 2N4261JV) 2N4261JS) MIL-STD-750 MIL-PRF-19500/511 2N4261 2N4261J 2N4261JS 2N4261JV 2N4261JX	PDF
Untitled Abstract: No abstract text available Text: 2N4261+JANTX Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0n÷ @V(CBO) (V) (Test Condition)10	Original	2N4261	PDF
2n4269 Abstract: No abstract text available Text: 2N4269 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 140V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products	Original	2N4269 O206AA) 10/10m 16-Jul-02 2n4269	PDF
Untitled Abstract: No abstract text available Text: 2N4269 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 140V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products	Original	2N4269 O206AA) 10/10m 19-Jun-02	PDF
2n4260 Abstract: No abstract text available Text: 2N4260 Chip: geometry 0014; polarity PNP 4.99 Transistors UHF/Micr. 1 of 1 Home Part Number: 2N4260 Online Store 2N4260 Diodes C hip: geo m et ry 0 0 1 4 ; po larit y PNP Transistors Enter code INTER3 at	Original	2N4260 com/2n4260 2N4260	PDF
2N4261 Abstract: No abstract text available Text: 2N4261 Chip: 4.5V; 30A geometry 0014; polarity PNP 4.99 Transistors . 1 of 1 Home Part Number: 2N4261 Online Store 2N4261 Diodes C hip: 4 .5 V; 3 0 A ge o m et ry 0 0 1 4 ; po larity PNP Transistors	Original	2N4261 com/2n4261 2N4261	PDF
nkt270 Abstract: Low-Power Germanium PNP 2N2635 2G30 2N2209 TR104 tr320 2g603 2N426 2N801 Text: LOW-POWER GERMANIUM PNP Item Number . Part Number V BR CBO 5 10 2N413 2N413A 2N809 2N810 2N112 2N112A 2N1681 2N396A 2G396 2G396 ~~~~~ 15 20 -25 30 -35 40 2G303 2G303 2G303 2N801 2N802 2N426 2N1171 2N1017 NKT224 2G382 2G382 NKT221 NKT228 NKT303 2N623 TI385	Original	2N413 2N413A 2N809 2N810 2N112 2N112A 2N1681 2N396A 2G396 nkt270 Low-Power Germanium PNP 2N2635 2G30 2N2209 TR104 tr320 2g603 2N426 2N801	PDF
diode bsy28 Abstract: BF152 CS9018 BF158 2SC738 2N3984 bsy28 diode SC2644 PN3563 BSY28 Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 BSY17 BSY18 BSY18 EN744 2N3985 BF153 BSX90 BSX90 BSX90 2N4421 2N4421 BSX91 BSX91 BSX91 2N4265 2S131 2S131 2S131 2SC739 C111E ~~~~9 25 30 - 35 -40 45 - 50 55 60 65 70 75 80 -85 90 95 BSY28	Original	BSY17 BSY18 EN744 2N3985 BF153 BSX90 2N4421 diode bsy28 BF152 CS9018 BF158 2SC738 2N3984 bsy28 diode SC2644 PN3563 BSY28	PDF

Untitled Abstract: No abstract text available Text: 2N4267 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)25 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)400m Minimum Operating Temp (øC)	Original	2N4267	PDF
Untitled Abstract: No abstract text available Text: 2N426 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)30 I(C) Max. (A)400m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)4.0u @V(CBO) (V) (Test Condition)1.5 h(FE) Min. Current gain.30 h(FE) Max. Current gain.60	Original	2N426	PDF
Untitled Abstract: No abstract text available Text: 2N4261+JANTXV Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0n÷ @V(CBO) (V) (Test Condition)10	Original	2N4261	PDF
Untitled Abstract: No abstract text available Text: 2N4264 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)200m Absolute Max. Power Diss. (W)310m Maximum Operating Temp (øC)135þ I(CBO) Max. (A).1uØ÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.	Original	2N4264 Freq300M	PDF
Untitled Abstract: No abstract text available Text: 2N4261 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200þ I(CBO) Max. (A)5.0n÷ @V(CBO) (V) (Test Condition)10	Original	2N4261	PDF
N2369 Abstract: 2N4260 2N2368 2N3546 2N2369A 2N3227 2N4261 2N706 2N708 2N869A Text: TO-18 T R A N S IS T O R S F A S T S P E E D SW IT C H NPN Device Type 2N706 2N708 2N914 2N2368 2N 2369 2 N 2369A 2N3227 BSX90 2N4260 2N4261 lc max. mA Polarity v C EO , VcER<+> (Volts) NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 20 (+ ) 15 15 15 15 15 20 12	OCR Scan	2N706 2N708 2N914 N2368 N2369 2N2369A 2N3227 BSX90 2N4260 2N4261 2N2368 2N3546 2N869A	PDF
2N4265 Abstract: 2N4264 QS 100 NPN Transistor Text: 2N4264 2N4265 MAXIMUM RATINGS Symbol 2N4264 2N4265 Collector-Emitter Voltage VCEO 15 12 Collector-Base Voltage v CBO Emitter-Base Voltage Characteristic 30 Unit Vdc Ve b o 6.0 Vdc Collector Current — Continuous Ic 200 mAdc Total Device Dissipation a T a = 25°C	OCR Scan	2N4264 2N4265 2N4265 O-226AA) 2N426S QS 100 NPN Transistor	PDF
2N4260 Abstract: 2N4261 Text: TYPES 2N4260, 2N4261 P-N-P SILICON TRANSISTORS B U L L E T IN N O . O L -S 7 3 1 1 9 3 3 , J U N E 1 9 7 3 DESIGNED FOR VHF AND UHF AMPLIFIER APPLICATIONS • High f j . . . 2 GHz Min 2N4261 • Low Capacitances . . . 2.5 pF Max Ccb and Ceb • Calculated f maxt . . . 1.27 GHz Min (2N4261)	OCR Scan	2N4260, 2N4261 2N4261) 2N4260	PDF
2N4265 Abstract: 2904S Text: 2N4264 2N4265 MAXIMUM RATINGS Symbol 2N4264 2N4265 Unit Collector-Emltter Voltage Characteristic VCEO 15 12 Vdc Collector-Base Voltage v CBO Emitter-Base Voltage 30 v EBO 6.0 Vdc Collector Current — Continuous ic 200 mAdc Total Device Dissipation @ Ta = 25°C	OCR Scan	2N4264 2N4265 2N4265 O-226AA) 010332b 2904S	PDF
2n426 Abstract: 2N4264 2n4265 Text: 2N4264 2N4265 M AXIMUM RATINGS Symbol 2N4264 2 N4265 Unit C o lle c to r-E m itte r V o lta g e v CEO 15 12 Vdc C o lle c to r-B a s e V o lta g e v CBO E m itte r-B a s e V o lta g e Characteristic 30 v EBO 6.0 Vdc C o lle c to r C u rre n t — C o n tin u o u s	OCR Scan	2N4264 2N4265 2N4264 N4265 O-226AA) 2N4264, 2n426 2n4265	PDF

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Microchip Technology Inc 2N4261

Rochester Electronics LLC 2N4264

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Microchip Technology Inc JAN2N4261UB

2N426 Datasheets (125)

2N426 Datasheets Context Search

2N4261

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2N4261

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2N4261

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2n4269

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2n4260

2N4261

nkt270

diode bsy28

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N2369

2N4265

2N4260

2N4265

2n426